CN1691314A - Flip ball grid array packaging base plate and making technique thereof - Google Patents
Flip ball grid array packaging base plate and making technique thereof Download PDFInfo
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- CN1691314A CN1691314A CN 200410026911 CN200410026911A CN1691314A CN 1691314 A CN1691314 A CN 1691314A CN 200410026911 CN200410026911 CN 200410026911 CN 200410026911 A CN200410026911 A CN 200410026911A CN 1691314 A CN1691314 A CN 1691314A
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Abstract
The invention discloses a packaging base plate of flip chip ball grid array integrated circuit and the making process. The base plate comprises enhanced metal core layer, insulating medium layer, conductive layer of the ball grid array base plate solder ball connection pattern and the lead pattern anti soldering layer and the back enhancing metal copper plate. Form a hollow in the back enhancing metal copper plate of the base plate and set chips. Coating insulating medium on the enhancing metal copper plate and forming the circuit, getting the final required structure by the special line connection structure and the special process of one-way gradually add layers.
Description
Technical field
(Integrated Circuit, IC) base plate for packaging and manufacture craft thereof refer in particular to and a kind ofly can directly make up the layer multilayer packaging substrate circuit to increase layer process (Build Up) strengthening on the metal copper sheet to the present invention relates to a kind of integrated circuit.
Background technology
Along with making rapid progress of electronic technology, the coming out one after another of high-tech electronic product, various products towards light, book, weak point, little trend design, use to provide more easily invariably.Electronic product is from beginning to make until finish, important role is being played the part of in the integrated circuit encapsulation, and the packing forms of integrated circuit is divided with the interconnection mode of substrate and chip, mainly contains two developing direction at present--lead-in wire bonding interconnection (Bonding) and soldered ball interconnection (Solder Bump).Present two kinds of packing forms are also deposited, and will play the part of more and more important role but Development of Packaging Technology trend is the latter.
Upside-down mounting ball grid array (Flip Chip Ball GridArray) encapsulation had both utilized soldered ball (SolderBump) to be covered with the floor space mode of whole base plate, substitute pin and subordinate's wiring board interconnection mode of traditional conductive metal frames, simultaneously also utilize the interconnection mode identical with the bottom surface on the surface of substrate again, replacing going between, bonding interconnects (Bonding) and higher level's chip interconnect mode.Because flip chip BGA can utilize the surface of whole base plate and the floor space arrangement space as contact, realize the interconnection with higher level's chip and subordinate's wiring board simultaneously, so and traditional monolateral or polygon line (Bonding to IC﹠amp that interconnects; Lead Frame to PCB) compares and have higher density pin wiring advantage.In addition, when reflow is worked, surface tension after the soldered ball dissolving can produce the phenomenon of self-calibrating, so the aligning accuracy of soldered ball is less demanding, add high reliability, good electrical characteristic, making upside-down mounting BGA Package (Flip Chip Ball Grid Array) become one of main flow of present integrated circuit encapsulation and developing direction.
With reference to accompanying drawing 1～Fig. 6, manufacturing process for traditional flip chip bga substrate, step is as follows: at first with reference to the accompanying drawings 1, after flip chip bga substrate central layer (101) line construction forms through the known traditional handicraft of industry, shown in accompanying drawing 2～6, carry out the formation technology of the line construction (102) of designing requirement simultaneously on the two sides of central layer (101).The filling that utilizes jack process to finish PTH through hole (105) flattens (Fig. 3).But select the sensitization insulating material and form Microvia (103) by figure transfer technology, or select the heat cured insulation material and form Microvia (103) (Fig. 4) by pressing plate and laser technology, use build-up circuit (104) that the conventional line forming technology realizes designing requirement then (Fig. 5).Two kinds of technologies of above-mentioned sensitization insulating material or heat cured insulation material all can obtain the traditional F lip Chip bga substrate of same structure, promptly must be by the electric interconnection between the build-up circuit face of through hole (PTH) (105) realization central layer two sides.This technology exists wiring density not high, complex process, the shortcoming that cost is high.Recent years occurs another and be different from the process that traditional F lip Chip BGA makes, i.e. pressing plate technology, it adopts each layer central layer to finish figure transfer simultaneously, boring, plug electric conducting material or hole utilize the cementability electric conducting material after electroplating and filling up in the hole, realize the connection of lead between each layer central layer by accurate contraposition pressing plate.There is pressing plate contraposition control difficulty in this technology, and technology difficulty is big, and reliability is low, the shortcoming that cost is high.
Summary of the invention
In view of having the problems referred to above in the existing Flip Chip BGA manufacture craft process, the object of the present invention is to provide a kind of novel Flip Chip bga substrate and manufacture craft thereof.
In order to achieve the above object, the technical solution used in the present invention is to strengthen the interconnection metal conductive pole (206) that the method that at first adopts graphic plating on the metal copper sheet (201) forms compound many metal-layer structures, compound many metal levels end face of this conductive pole plays traditional F lip ChipBGA substrate upper protruding block and claps (Bump pad) same effect, the effect of the etch stop layer that will describe below its compound many metal-layer structures also play simultaneously.The method coating one deck dielectric that is coated with by silk-screen, roller coat or curtain on the metallic conduction post after finishing; The dielectric surface through levelling process so that expose the other end of metallic conduction post (206), after metallization and graphic plating technology, obtain the conductor side (208) that interconnects mutually with the metallic conduction post again on the dielectric surface then, on above-mentioned conductor side, utilize interconnect conductive post (209) with similarly formation method of compound many metal levels metallic conduction post formation monometallic structure; By repeatedly repeating the multilayer interconnect structure that above-mentioned operation realizes designing requirement.Include the enhancing metal core layer of particular design in the multilayer interconnect structure, this layer is intended to improve the intensity of multilayer wiring structure, plays the similar humidification of traditional F lip Chip BGA central layer.After finishing all line constructions, carry out the application of outer solder mask, the method by machining and chemical etching forms cavity at the back side that strengthens the metal copper sheet afterwards.Form cavity compound many metal levels end face of many metal levels of exposed composite metal salient point simultaneously in chemical corrosion.In cavity, place circuit chip, and the metal salient point that is end face as solder ball and compound many metal levels of ports such as input and output on the circuit chip aligned and the packaging technology of Flip Chip bga chip by routine and substrate is finished the interconnection of chip and substrate.Wherein:
The metallic conduction post of described compound many metal levels and the interconnection of its adjacent lines layer can be adopted traditional dish (Capture Pad) of catching, the structure that also can take circuit end and conductive pole end face by the adjacent lines layer directly to overlap.Compare the plane figure that direct bridging arrangement can not change former design conductive pole position with catch the dish structure with tradition, do not increase the difficulty of wiring.Many metal levels of compound many metallic conductions post are to realize that according to different demand employing order graphic plating Au-Ni-Cu or the technology of Ni-Cu the conductive pole structure that needing finally to obtain is so that and chip interconnect.
The application of described insulating material is to know the method coating that silk-screen, roller coat or curtain are coated with by industry.
Describedly repeatedly repeat the multilayer interconnect structure that aforementioned operation realizes designing requirement, be meant after the insulating material surface of above-mentioned coating process is ground, at first know the chemical copper deposition by industry, figure transfer (addition process or subtractive process technology) obtains the figure of the via of line pattern and inter-level interconnects smoothly, repeat insulating material coating, surface grinding technology, chemical copper deposition afterwards, figure transfer is finished the interconnection process process between the sandwich construction adjacent layer.
The metal core layer that includes particular design in the described multilayer interconnect structure, it is for the intensity that improves whole sandwich construction and planarization and additional enhancing structure sheaf, and this metal core layer can merge with further optimal design in conjunction with client's design and wherein a certain function metal level.
Described machining and method for chemially etching form cavity at the back side that strengthens the metal copper sheet, be meant that the method that at first adopts machining removes most metal, to improve the efficient of technical process, adopt the method for chemical etching afterwards again, and utilize the special metal in compound many metal levels conductive pole structure can resist etched mechanism, finish being used for placing the cavity of chip and exposing the conductive pole end face that interconnects mutually with Flip Chip.
Beneficial effect of the present invention is compared with prior art, have following advantage: used dielectric raw material selectable range is wide, and price is suitable, and this kind dielectric has good performance in the reliability of products test.Products obtained therefrom is the brand-new FC-BGA base plate for packaging that does not contain traditional central layer, can effectively improve and improve the electric property and the unfailing performance of package interconnect, meets the developing direction of integrated circuit development to the base plate for packaging forward requirement.
For technique scheme of the present invention can be become apparent, cooperate appended icon especially exemplified by example below, elaborate.
Description of drawings
Fig. 1～5th, the IC base plate for packaging manufacture craft flow chart of traditional F C-BGA
Fig. 6 is the profile of traditional F C-BGA
Fig. 7～26th, manufacture craft flow chart of the present invention be wherein:
Fig. 7～12nd, the interconnection metal conductive pole that powers on and plate out compound many metal-layer structures at copper coin
Figure 13～17th, the insulating medium layer coating of the ground floor after compound many layer metal interconnections are finished with the metallic conduction post, dielectric surface evening, the forming process of ground floor line pattern and first and second layers of line layer interconnect conductive post
Figure 18～20th, the coating of second layer insulating medium layer, dielectric surface evening, the forming process of second layer line pattern and second and the 3rd layer of line layer interconnect conductive post
Figure 21 is the 4th layer of insulating medium layer coating, the situation behind the dielectric surface evening
Figure 22 is in the formation that strengthens metal core layer line pattern and the interconnect conductive post on it on the 4th layer of insulating medium layer after the leveling
Figure 23 is the coating of layer 5 insulating medium layer, dielectric surface evening, the formation of layer 5 line pattern
Figure 24 is the formation of solder mask
Figure 25～26th, the formation of placing the chip cavity
Figure 27 is that the whole plate of production usefulness forms base board unit through over-segmentation
Figure 28 is a substrate cutaway view of the present invention
Among the figure: 101 central layers, 102 central layer two sides circuits, 103 Microvias, 104 build-up circuits, 105 PTH holes, PTH hole before 105a fills, 105b fills PTH hole, back, 106 dielectrics, 107 solder masks, 201 strengthen the metal copper sheet, 202Au, 203 sensitization anti-plate dry films, 204Ni, 205Cu, 206 metallic conduction posts, 207 dielectrics, 208 line patterns, 209 interconnect conductive posts, 210 strengthen sandwich layer, 211 solder masks, 212 reprocessing openings, 213 place the cavity of chip, 214 PAD, 300 base board units, 301 chips, 302 tin balls, 303 back metal copper sheets, 304 adhesive layers
Embodiment
The manufacture craft following steps of the integrated circuit that is obtained (IC) FC-BGA base plate for packaging: 1, the interconnection metal conductive pole that powers on and plate out compound many metal-layer structures at copper coin
Shown in Fig. 7,8,, paste sensitization anti-plate dry films 203 strengthening metal copper sheet 201 surfaces to after strengthening metal copper sheet 201 and carrying out surface treatment.Shown in Fig. 9～12, by exposure, develop and order figure electroplated Ni 204, Au202, Cu205 and the method that takes off film form the interconnection metal conductive pole 206 of compound many metal-layer structures.
2, copper coin power on that the interconnection metal conductive pole 206 back insulating medium layers that plate out compound many metal-layer structures are used for the first time and for the first time on the insulating medium layer line pattern and interconnect conductive post form
Shown in Figure 13～17, the method that is coated with by silk-screen, roller coat or curtain is carried out insulating medium layer and is used for the first time behind the interconnection metal conductive pole of composite electroplated many metal-layer structures on the copper coin, coating one deck dielectric 207, through suitable baking condition, the dielectric surface evening, chemical copper deposition, anti-plate layer dry film 203 pasted on the surface afterwards, by exposure, develop, order graphic plating and take off film and form line pattern 208 and interconnect conductive post 209.
3, insulating medium layer is used and the formation of line pattern and interconnect conductive post on the insulating medium layer for the second time for the second time
Shown in Figure 18～20.
4, the formation of insulating medium layer application for the third time and line pattern and interconnect conductive post and insulating medium layer are used for the 4th time
As shown in figure 21
5, strengthen the formation of metal core layer 210 line patterns and interconnect conductive post on the 4th minor insulation dielectric layer
As shown in figure 22
6, insulating medium layer the 5th time use and the 5th minor insulation dielectric layer on line pattern formation as shown in figure 23
7, the formation of solder mask 211
As shown in figure 24; solder mask 211 be the figure transfer that forms by figure transfer (being silk-screen, exposure, development) but with the photosensitive solder resist resin to the base board unit face, the protective layer that solder mask 211 forms circuits also exposes the opening 212 that needs subsequent treatment on the wire pattern 208.
8, place the formation of the cavity 213 of chip
Shown in Figure 25,26,, remove whole metals of cavity bottom then by etching, and expose the conductive pole end face that interconnects mutually with Flip Chip by method cavity 213 of formation in the middle of enhancing metal copper sheet of milling.On cavity 213, form melanism or brown oxide layer then as required, so that the application of chip 301 encapsulated phases.
9, the cutting of elementary cell
As shown in figure 27, base board unit is cut into one by one little base board unit 300 from strengthening the metal copper sheet.The product section of gained is placed on chip 301 in the cavity 213 as shown in figure 28, and by the conducting of tin ball 302 realization chips 301 with substrate 300, chip 301 and tin ball 302 are sealed in the sealing 304 of reinjecting.
Claims (8)
1, a kind of upside-down mounting base plate for packaging ball grid array, this substrate by the metal core layer of insulating medium layer, enhancement function, comprise this BGA substrate soldered ball and connect pattern and strengthen the metal copper sheet with the conductive layer of wire pattern, the metallic conduction post that is connected each conductive layer, solder mask and the back side and form, it is characterized in that: the formation cavity is used for placing chip in the enhancing metal copper sheet on sticking to the chip face of substrate.
2, a kind of manufacture craft of upside-down mounting base plate for packaging ball grid array comprises following steps:
A, strengthening the method that at first adopts the figure electrodeposit on the metal copper sheet, forming the connection metallic conduction post of compound many metal-layer structures, this metallic conduction post and as the package land bat of being inverted chip;
B, the method that is coated with by silk-screen, roller coat or curtain are coated with one deck dielectric,
C, by surface evening technology exposing metal conductive pole end faces such as brush boards, carry out the dielectric surface metalation then, the conduction that obtains behind the pattern plating copper finishing between the two-layer circuit connects;
D, by repeatedly repeating aforementioned operation to realize the multilayer syndeton of designing requirement;
The metal core layer that has included mechanical enhancement function in e, multilayer insulation medium and the metal carbonyl conducting layer structure;
F, carry out the application of outer solder mask;
G, the method by machining and chemical etching form cavity on unilateral strengthening metallic copper, are used for placing chip, and the connection of the compound many metal-layer structures by initial formation is finished being connected of chip and this substrate with the metallic conduction post.
3, according to the manufacture craft of the described upside-down mounting base plate for packaging ball grid array of claim 2, it is characterized in that: the connection of described compound many metal-layer structures be with can taking via hole to clap structure being connected of metallic conduction post and its adjacent lines layer, or the structure that is directly overlapped by circuit end and conductive pole.
4, according to the manufacture craft of the described upside-down mounting base plate for packaging ball grid array of claim 2, it is characterized in that: strengthening the connection structures such as metallic conduction post employing Au-Ni-Cu or Ni-Cu that the metal copper sheet powers on and plates the compound many metal-layer structures that form.
5, according to the manufacture craft of the described upside-down mounting base plate for packaging ball grid array of claim 2, it is characterized in that: the application of described insulating material is the method coating that is coated with by silk-screen, roller coat or curtain.
6, according to the manufacture craft of the described upside-down mounting base plate for packaging ball grid array of claim 2, it is characterized in that: describedly repeatedly repeat the multilayer syndeton that aforementioned operation realizes designing requirement, be at first on the figure of established a certain layer line road, to obtain the metallic conduction post that the line pattern interlayer connects by the figure transfer electroplating technology, be coated with coating insulation material and surperficial brush board technology then, heavy copper of applied chemistry and line pattern electroplating technology are finished the line pattern and the interlayer connection procedure of adjacent layer afterwards.
7, according to the manufacture craft of the described upside-down mounting base plate for packaging ball grid array of claim 2, it is characterized in that: include the enhancing metal core layer in the described multilayer syndeton, this metal core layer is can be with electric function wherein laminated and with further optimal design.
8, according to the manufacture craft of the described upside-down mounting base plate for packaging ball grid array of claim 2, it is characterized in that: the method for described machining and chemical etching forms cavity on enhancing metal copper sheet, be meant that the method that at first adopts machining removes most metal copper sheet thickness at the position, chip chamber of placing chip, adopt the method for chemical etching to remove remaining metal copper sheet thickness afterwards again, and utilize the etched barrier layer of the special metal layer conduct in compound many metal levels conductive pole structure, finish the cavity that is used for placing chip.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100269118A CN100372103C (en) | 2004-04-21 | 2004-04-21 | Flip ball grid array packaging base plate and making technique thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100269118A CN100372103C (en) | 2004-04-21 | 2004-04-21 | Flip ball grid array packaging base plate and making technique thereof |
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| CN1691314A true CN1691314A (en) | 2005-11-02 |
| CN100372103C CN100372103C (en) | 2008-02-27 |
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