CN102723292B - Flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip double-faced three-dimensional circuit encapsulation structure - Google Patents
Flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip double-faced three-dimensional circuit encapsulation structure Download PDFInfo
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- CN102723292B CN102723292B CN201210189891.0A CN201210189891A CN102723292B CN 102723292 B CN102723292 B CN 102723292B CN 201210189891 A CN201210189891 A CN 201210189891A CN 102723292 B CN102723292 B CN 102723292B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
The invention relates to a flip chip double-faced three-dimensional circuit encapsulation prior to etching manufacture method by encapsulation prior to etching. The method includes: taking a metal substrate; preplating copper to the metal substrate surface; coating with green paint; partially removing the green paint on the back of the metal substrate; electroplating an inert metal circuit layer; electroplating a metal circuit layer; coating with green paint; partially removing the green paint on the back of the metal substrate; electroplating a metal circuit layer; coating with green paint; partially removing the green paint on the back of the metal substrate; coating a circuit screen plate; performing metallization pretreatment; removing the circuit screen plate; electroplating a metal circuit layer; coating with green paint; partially removing the green paint on the front of the metal substrate; performing chemical etching; electroplating a metal circuit layer; mounting a chip and filling adhesives to the bottom of the chip; encapsulating; reserving holes on the back of the substrate; cleaning; attaching balls; and cutting finished products. The flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching has the advantages that manufacture cost is lowered, safety and reliability of encapsulation are enhanced, environmental pollution is reduced, and design and manufacture of high density circuit are really achieved.
Description
Technical field
The present invention relates to the two-sided three-dimensional circuit of a kind of flip-chip and first lose rear envelope manufacture method and encapsulating structure thereof.Belong to semiconductor packaging field.
Background technology
The manufacturing process flow of traditional high-density base board encapsulating structure is as follows:
Step 1, referring to Figure 71, get the substrate that a glass fiber material is made,
Step 2, referring to Figure 72, perforate on desired position on glass fibre basal plate,
Step 3, referring to Figure 73, at the back side of glass fibre basal plate coating one deck Copper Foil,
Step 4, referring to Figure 74, in the position of glass fibre basal plate punching, insert conductive materials,
Step 5, referring to Figure 75, at positive coating one deck Copper Foil of glass fibre basal plate,
Step 6, referring to Figure 76, at glass fibre basal plate covering surface photoresistance film,
Step 7, referring to Figure 77, photoresistance film is carried out to exposure imaging in the position of needs and windows,
Step 8, referring to Figure 78, by completing the part of windowing, carry out etching,
Step 9, referring to Figure 79, the photoresistance film of substrate surface is divested,
Step 10, referring to Figure 80, on the surface of copper foil circuit layer, carry out the coating of anti-welding paint (being commonly called as green paint),
Step 11, referring to Figure 81, after anti-welding paint need to carry out, window in the load of operation and the region of routing bonding,
Step 12, referring to Figure 82, electroplate in the region of windowing in step 11, relatively forms Ji Dao and pin,
Step 13, complete follow-up load, routing, seal, the concerned process steps such as cutting.
Above-mentioned traditional high-density base board encapsulating structure has the following disadvantages and defect:
1, many glass fiber materials of one deck, same also many costs of layer of glass;
2, because must use glass fibre, so with regard to many thickness space of layer of glass thickness approximately 100 ~ 150 μ m;
3, glass fibre itself is exactly a kind of foaming substance, so easily because the time of placing and environment suck moisture and moisture, directly have influence on security capabilities or the reliability step of reliability;
4, fiberglass surfacing coating the Copper Foil metal layer thickness of one deck approximately 50 ~ 100 μ m, and the etching of metal level circuit and circuit distance is also because the characteristic of etching factor can only be accomplished the etched gap (etching factor: the ability of preferably manufacturing is the thickness that etched gap is approximately equal to etched object of 50 ~ 100 μ m, referring to Figure 83), so the design of accomplishing high-density line and manufacture that cannot be real;
5, because must use Copper Foil metal level, and Copper Foil metal level is the mode that adopts high pressure stickup, so the thickness of Copper Foil is difficult to the thickness lower than 50 μ m, otherwise is just difficult to operation as out-of-flatness or Copper Foil breakage or Copper Foil extension displacement etc.;
6, also because whole baseplate material is to adopt glass fiber material, thus significantly increased thickness 100 ~ 150 μ m of glass layer, cannot be real accomplish ultra-thin encapsulation;
7, the technology that traditional glass fiber is sticked on Copper Foil, because material property difference very large (coefficient of expansion) easily causes stress deformation in the operation of adverse circumstances, directly has influence on precision and element and substrate adherence and reliability that element loads.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, provide the two-sided three-dimensional circuit of a kind of flip-chip first to lose rear envelope manufacture method and encapsulating structure thereof, its technique is simple, do not need to use glass layer, reduce cost of manufacture, improved the safety and reliability of packaging body, reduced the environmental pollution that glass fiber material brings, and metal substrate line layer adopts is electro-plating method, can really accomplish the Design and manufacture of high-density line.
The object of the present invention is achieved like this: encapsulation making method after the first etching of a kind of flip-chip Double-side line, said method comprising the steps of:
Step 1, get metal substrate
Step 2, the pre-copper facing of metallic substrate surfaces
Step 3, green paint coating
At the metal substrate front and the back side that complete preplating copper material film, carry out respectively the coating of green paint;
The green paint of part is removed at step 4, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 3 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure;
Step 5, plating inert metal line layer
In step 4, in the region of metal substrate back side removal part photoresistance film, electroplate inert metal line layer;
Step 6, plated metal line layer
Multilayer or single-layer metal line layer on inert metal line layer plated surface in step 5;
Step 7, green paint coating
At the back side of metal substrate, carry out the coating of green paint;
The green paint of part is removed at step 8, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 4 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure;
Step 9, plated metal line layer
Multilayer or single-layer metal line layer on metallic circuit layer plated surface in step 6;
Step 10, green paint coating
At the back side of metal substrate, carry out the coating of green paint;
The green paint of part is removed at step 11, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 10 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure;
Step 12, be covered with circuit web plate
At the metal substrate back side, be covered with circuit web plate;
Step 13, metallization pre-treatment
At substrate back, carry out the metallization pre-treatment of plated metal line layer;
Step 14, remove circuit web plate
The circuit web plate of step 12 is removed;
Step 15, plated metal line layer
At the metal substrate back side, plate multilayer or single-layer metal line layer;
Step 10 six, green paint coating
At the back side of metal substrate, carry out the coating of green paint;
Step 10 seven, metal substrate front face are removed the green paint of part
Utilize exposure imaging equipment to be carried out to graph exposure, develop and remove the green paint of part figure in metal substrate front;
Step 10 eight, chemical etching
Chemical etching is carried out in the region that completes exposure imaging in step 10 seven;
Step 10 nine, plated metal line layer
Individual layer or the metallic circuit layer of multilayer on inert metal line layer plated surface;
Step 2 ten, green paint coating
In the front of metal substrate, carry out the coating of green paint;
Step 2 11, metal substrate front face are removed the green paint of part
Utilize exposure imaging equipment to be carried out to graph exposure, develop and remove the green paint of part figure in metal substrate front;
Step 2 12, plated metal line layer
In the positive region of removing the green paint of part of metal substrate, electroplate one deck conducting metal;
Step 2 13, green paint coating
In the front of metal substrate, carry out the coating of green paint;
Step 2 14, metal substrate front face are removed the green paint of part
Utilize exposure imaging equipment to be carried out to graph exposure, develop and remove the green paint of part figure in metal substrate front;
Step 2 15, be covered with circuit web plate
In metal substrate front, be covered with circuit web plate;
Step 2 16, metallization pre-treatment
In metal substrate front, carry out the metallization pre-treatment of plated metal line layer;
Step 2 17, remove circuit web plate
The circuit web plate of step 2 15 is removed;
Step 2 18, plated metal line layer
In metal substrate front, plate the metallic circuit layer of individual layer or multilayer, after metal plating completes, on metal substrate, form corresponding pin Huo Ji island and pin Huo Ji island, pin and static release ring;
Step 2 19, load and chip bottom are filled
Front, the positive Huo Ji of pin island and pin front flip-chip and chip bottom filling epoxy resin in step 2 18;
Step 3 ten, seal
By completing metal substrate front after load, carry out plastic packaging material and seal operation;
Step 3 11, the perforate of the metal substrate back side
The surface of sealing in advance green paint at the metal substrate back side is carried out the follow-up region that will plant Metal Ball and is carried out perforate operation;
Step 3 12, cleaning
At the metal substrate back side, green paint tapping carries out the cleaning of oxidation material, organic substance;
Step 3 13, plant ball
At the metal substrate back side, green paint tapping is implanted into Metal Ball;
Step 3 14, cutting finished product
Step 3 13 is completed to the semi-finished product of planting ball and carry out cutting operation, more than cuttings of plastic-sealed body module that script integrated in array aggregate mode and contain chip are independent, after making the first etching of single-chip upside-down mounting, encapsulate base island embedded encapsulating structure, can adopt conventional diamond blade and conventional cutting equipment.
The present invention also provides a kind of two-sided three-dimensional circuit flip-chip first to lose rear envelope encapsulating structure, it comprises chip and pin, the positive upside-down mounting of described chip is positive in pin, between described chip bottom and pin front, be provided with underfill, the region of the region on the region between described pin and pin, pin top, pin bottom and chip and metal wire are all encapsulated with plastic packaging material outward, on the plastic packaging material at the described pin back side, offer aperture, described aperture is connected with the pin back side, in described aperture, be provided with Metal Ball, described Metal Ball contacts with the pin back side.
12 pairs of metal substrate back side plastic packaging material tappings of described step 3 clean and carry out coat of metal coating simultaneously.
Described encapsulating structure comprises Ji Dao, and front, positive upside-down mounting Yu Ji island and the pin of described chip are positive, between front, described chip bottom Yu Ji island and pin front, are provided with underfill.
Compared with prior art, the present invention has following beneficial effect:
1, the present invention does not need to use glass layer, so can reduce the cost that glass layer brings;
2, the present invention does not use the foaming substance of glass layer, so the grade of reliability can improve again, relatively to the fail safe of packaging body, will improve;
3, the present invention does not need to use glass layer material, so just can reduce the environmental pollution that glass fiber material brings;
What 4,3-dimensional metal substrate circuit layer of the present invention adopted is electro-plating method, and every one deck gross thickness of electrodeposited coating is about 10 ~ 15 μ m, and gap between circuit and circuit can reach the gap below 25 μ m easily, so can accomplish veritably the technical capability of high density Inner Yin Legs Line road tiling;
5,3-dimensional metal substrate of the present invention is metal level galvanoplastic because of what adopt, so the technique than glass fibre high pressure Copper Foil metal level is come simply, and do not have metal level because high pressure produces bad or puzzled that metal level out-of-flatness, metal level breakage and metal level extend and be shifted;
6,3-dimensional metal substrate circuit layer of the present invention is to carry out metal plating on the surface of metal base, so material characteristic is basic identical, so the internal stress of coating circuit and metal base is basic identical, can carries out easily the rear engineering (as the surface mount work of high temperature eutectic load, high temperature tin material scolder load and high temperature passive device) of adverse circumstances and be not easy to produce stress deformation.
Accompanying drawing explanation
Fig. 1 ~ Figure 34 is each operation schematic diagram that the two-sided three-dimensional circuit of flip-chip of the present invention first loses rear envelope manufacture method embodiment 1.
Figure 35 is the structural representation that the two-sided three-dimensional circuit of flip-chip of the present invention first loses rear envelope encapsulating structure embodiment 1.
Figure 36 ~ Figure 69 is each operation schematic diagram that the two-sided three-dimensional circuit of flip-chip of the present invention first loses rear envelope manufacture method embodiment 2.
Figure 70 is the structural representation that the two-sided three-dimensional circuit of flip-chip of the present invention first loses rear envelope encapsulating structure embodiment 2.
Figure 71 ~ Figure 82 is the manufacturing process flow diagram of traditional high-density base board encapsulating structure.
Figure 83 is the etching situation schematic diagram of fiberglass surfacing Copper Foil metal level.
Wherein:
Metal substrate 1
Copper material film 2
Green paint 3
Inert metal line layer 4
Metallic circuit layer 5
Circuit web plate 6
Metallization preprocessing layer 7
Underfill 8
Chip 9
Plastic packaging material 10
Aperture 11
Coat of metal 12
Metal Ball 13
Base island 14
Pin 15.
Embodiment
The two-sided three-dimensional circuit of a kind of flip-chip of the present invention first lose rear envelope manufacture method and encapsulating structure as follows:
Embodiment mono-, Wu Ji island
Step 1, get metal substrate
Referring to Fig. 1, get the metal substrate that a slice thickness is suitable, the material of metal substrate can convert according to function and the characteristic of chip, such as: copper material, iron material, ferronickel material, zinc-iron material etc.
Step 2, the pre-copper facing of metallic substrate surfaces
Referring to Fig. 2, at metallic substrate surfaces plating one deck copper material film, object is to do basis for follow-up plating.(mode of plating can adopt electroless plating or metallide).
Step 3, green paint coating
Referring to Fig. 3, at the metal substrate front and the back side that complete preplating copper material film, carry out respectively the coating of green paint, to protect follow-up electroplated metal layer process operation.
The green paint of part is removed at step 4, the metal substrate back side
Referring to Fig. 4, the metal substrate back side that utilizes exposure imaging equipment that step 3 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure, the regional graphics of electroplating to expose the follow-up needs in the metal substrate back side.
Step 5, plating inert metal line layer
Referring to Fig. 5, in step 4, in the region of metal substrate back side removal part photoresistance film, electroplate inert metal line layer, as the barrier layer of subsequent etch work, inert metal can adopt nickel or titanium or copper, and plating mode can make electroless plating or metallide mode.
Step 6, plated metal line layer
Referring to Fig. 6, multilayer or single-layer metal line layer on inert metal line layer plated surface in step 5, described metallic circuit layer can adopt one or more in golden nickel, copper nickel gold, copper NiPdAu, porpezite, copper material, and plating mode can be that electroless plating can be also the mode of metallide.
Step 7, green paint coating
Referring to Fig. 7, at the back side of metal substrate, carry out the coating of green paint, to protect follow-up electroplated metal layer process operation.
The green paint of part is removed at step 8, the metal substrate back side
Referring to Fig. 8, the metal substrate back side that utilizes exposure imaging equipment that step 4 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure, the regional graphics of electroplating to expose the follow-up needs in the metal substrate back side.
Step 9, plated metal line layer
Referring to Fig. 9, multilayer or single-layer metal line layer on metallic circuit layer plated surface in step 6, described metallic circuit layer can adopt one or more in golden nickel, copper nickel gold, copper NiPdAu, porpezite, copper material, and plating mode can be that electroless plating can be also the mode of metallide.
Step 10, green paint coating
Referring to Figure 10, at the back side of metal substrate, carry out the coating of green paint, to protect follow-up electroplated metal layer process operation.
The green paint of part is removed at step 11, the metal substrate back side
Referring to Figure 11, the metal substrate back side that utilizes exposure imaging equipment that step 10 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure, the regional graphics of electroplating to expose the follow-up needs in the metal substrate back side.
Step 12, be covered with circuit web plate
Referring to Figure 12, at the metal substrate back side, be covered with circuit web plate.
Step 13, metallization pre-treatment
Referring to Figure 13, at substrate back, carry out the metallization pre-treatment of plated metal line layer, metallization pre-treatment can be used coating process (mode of spray pattern, mode of printing, showering mode, immersion etc.).
Step 14, remove circuit web plate
Referring to Figure 14, the circuit web plate of step 12 is removed.
Step 15, plated metal line layer
Referring to Figure 15, at the metal substrate back side, plate multilayer or single-layer metal line layer, described metallic circuit layer can adopt one or more in golden nickel, copper nickel gold, copper NiPdAu, porpezite, copper material, and plating mode can be that electroless plating can be also the mode of metallide.
Step 10 six, green paint coating
Referring to Figure 16, at the back side of metal substrate, carry out the coating of green paint, to metallic circuit layer is sealed.
Step 10 seven, metal substrate front face are removed the green paint of part
Referring to Figure 11, utilize exposure imaging equipment that the green paint of part figure is carried out to graph exposure, develops and removes in metal substrate front, the regional graphics of electroplating to expose the positive follow-up needs of metal substrate.
Step 10 eight, chemical etching
Referring to Figure 18, chemical etching is carried out in the region that completes exposure imaging in step 10 seven, chemical etching is until inert metal line layer, and etching solution can adopt copper chloride or iron chloride.
Step 10 nine, plated metal line layer
Referring to Figure 19, individual layer or the metallic circuit layer of multilayer on inert metal line layer plated surface, coating kind can be copper nickel gold, copper nickeline, porpezite, gold or copper etc., electro-plating method can be electroless plating or metallide.
Step 2 ten, green paint coating
Referring to Figure 20, in the front of metal substrate, carry out the coating of green paint, to metallic circuit layer is sealed.
Step 2 11, metal substrate front face are removed the green paint of part
Referring to Figure 21, utilize exposure imaging equipment that the green paint of part figure is carried out to graph exposure, develops and removes in metal substrate front, the regional graphics of electroplating to expose the positive follow-up needs of metal substrate.
Step 2 12, plated metal line layer
Referring to Figure 22, in the positive region of removing the green paint of part of metal substrate, electroplate one deck conducting metal, plating mode can be electroless plating or metallide mode.
Step 2 13, green paint coating
Referring to Figure 23, in the front of metal substrate, carry out the coating of green paint, to metallic circuit layer is sealed.
Step 2 14, metal substrate front face are removed the green paint of part
Referring to Figure 24, utilize exposure imaging equipment that the green paint of part figure is carried out to graph exposure, develops and removes in metal substrate front, the regional graphics of electroplating to expose the positive follow-up needs of metal substrate.
Step 2 15, be covered with circuit web plate
Referring to Figure 25, in metal substrate front, be covered with circuit web plate.
Step 2 16, metallization pre-treatment
Referring to Figure 26, in metal substrate front, carry out the metallization pre-treatment of plated metal line layer, metallization pre-treatment can be used coating process (mode of spray pattern, mode of printing, showering mode, immersion etc.).
Step 2 17, remove circuit web plate
Referring to Figure 27, the circuit web plate of step 2 15 is removed.
Step 2 18, plated metal line layer
Referring to Figure 28, in metal substrate front, plate the metallic circuit layer of individual layer or multilayer, after metal plating completes, on metal substrate, form corresponding pin, coating kind can be copper nickel gold, copper nickeline, porpezite, gold or copper etc., and electro-plating method can be electroless plating or metallide.
Step 2 19, load and chip bottom are filled
Referring to Figure 29, at pin front flip-chip and the chip bottom filling epoxy resin of step 2 18
Step 3 ten, seal
Referring to Figure 30; by completing metal substrate front after load, carry out plastic packaging material and seal operation; object is to utilize epoxy resin that chip and metal wire are fixed and are protected; encapsulating method adopts mould encapsulating, spraying method Huo Shua Rubber mode to carry out, and plastic packaging material can adopt filler or packless epoxy resin.
Step 3 11, the perforate of the metal substrate back side
Referring to Figure 31, the surface of sealing in advance green paint at the metal substrate back side is carried out the follow-up region that will plant Metal Ball and is carried out perforate operation, can adopt dry laser sintering or the method for wet chemistry corrosion to carry out perforate.
Step 3 12, cleaning
Referring to Figure 32, at the metal substrate back side, green paint tapping carries out the cleaning of oxidation material, organic substance, can carry out the coating of coat of metal simultaneously, and coat of metal adopts oxidation-resistant material.
Step 3 13, plant ball
Referring to Figure 33, at the metal substrate back side, green paint tapping is implanted into Metal Ball, Metal Ball is contacted with the pin back side, can adopt conventional ball attachment machine or adopt metal paste printing after high-temperature digestion, can form orbicule again, the material of Metal Ball can be pure tin or ashbury metal.
Step 3 14, cutting finished product
Referring to Figure 34, step 3 13 is completed to the semi-finished product of planting ball and carry out cutting operation, more than cuttings of plastic-sealed body module that script integrated in array aggregate mode and contain chip are independent, after making the first etching of single-chip upside-down mounting, encapsulate base island embedded encapsulating structure, can adopt conventional diamond blade and conventional cutting equipment.
As shown in figure 35, the present invention also provides the two-sided three-dimensional circuit of a kind of flip-chip first to lose the encapsulating structure of rear envelope, described encapsulating structure comprises chip 9 and pin 15, the positive upside-down mounting of described chip 9 is in pin 15 fronts, between described chip 9 bottoms and pin 15 fronts, be provided with underfill 8, region between described pin 15 and pin 15, the region on pin 15 tops, the region of pin 15 bottoms and chip 9 outer encapsulatings have green paint 3 and plastic packaging material 11, on the green paint 3 at described pin 15 back sides, offer aperture 11, described aperture 11 is connected with pin 15 back sides, in described aperture 11, be provided with Metal Ball 13, between described Metal Ball 13 and pin 15 back sides, be provided with coat of metal 12, described Metal Ball 13 adopts tin or tin alloy material.
Embodiment bis-, You Ji island
Step 1, get metal substrate
Referring to Figure 36, get the metal substrate that a slice thickness is suitable, the material of metal substrate can convert according to function and the characteristic of chip, such as: copper material, iron material, ferronickel material, zinc-iron material etc.
Step 2, the pre-copper facing of metallic substrate surfaces
Referring to Figure 37, at metallic substrate surfaces plating one deck copper material film, object is to do basis for follow-up plating.(mode of plating can adopt electroless plating or metallide).
Step 3, green paint coating
Referring to Figure 38, at the metal substrate front and the back side that complete preplating copper material film, carry out respectively the coating of green paint, to protect follow-up electroplated metal layer process operation.
The green paint of part is removed at step 4, the metal substrate back side
Referring to Figure 39, the metal substrate back side that utilizes exposure imaging equipment that step 3 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure, the regional graphics of electroplating to expose the follow-up needs in the metal substrate back side.
Step 5, plating inert metal line layer
Referring to Figure 40, in step 4, in the region of metal substrate back side removal part photoresistance film, electroplate inert metal line layer, as the barrier layer of subsequent etch work, inert metal can adopt nickel or titanium or copper, and plating mode can make electroless plating or metallide mode.
Step 6, plated metal line layer
Referring to Figure 41, multilayer or single-layer metal line layer on inert metal line layer plated surface in step 5, described metallic circuit layer can adopt one or more in golden nickel, copper nickel gold, copper NiPdAu, porpezite, copper material, and plating mode can be that electroless plating can be also the mode of metallide.
Step 7, green paint coating
Referring to Figure 42, at the back side of metal substrate, carry out the coating of green paint, to protect follow-up electroplated metal layer process operation.
The green paint of part is removed at step 8, the metal substrate back side
Referring to Figure 43, the metal substrate back side that utilizes exposure imaging equipment that step 4 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure, the regional graphics of electroplating to expose the follow-up needs in the metal substrate back side.
Step 9, plated metal line layer
Referring to Figure 44, multilayer or single-layer metal line layer on metallic circuit layer plated surface in step 6, described metallic circuit layer can adopt one or more in golden nickel, copper nickel gold, copper NiPdAu, porpezite, copper material, and plating mode can be that electroless plating can be also the mode of metallide.
Step 10, green paint coating
Referring to Figure 45, at the back side of metal substrate, carry out the coating of green paint, to protect follow-up electroplated metal layer process operation.
The green paint of part is removed at step 11, the metal substrate back side
Referring to Figure 46, the metal substrate back side that utilizes exposure imaging equipment that step 10 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure, the regional graphics of electroplating to expose the follow-up needs in the metal substrate back side.
Step 12, be covered with circuit web plate
Referring to Figure 47, at the metal substrate back side, be covered with circuit web plate.
Step 13, metallization pre-treatment
Referring to Figure 48, at substrate back, carry out the metallization pre-treatment of plated metal line layer, metallization pre-treatment can be used coating process (mode of spray pattern, mode of printing, showering mode, immersion etc.).
Step 14, remove circuit web plate
Referring to Figure 49, the circuit web plate of step 12 is removed.
Step 15, plated metal line layer
Referring to Figure 50, at the metal substrate back side, plate multilayer or single-layer metal line layer, described metallic circuit layer can adopt one or more in golden nickel, copper nickel gold, copper NiPdAu, porpezite, copper material, and plating mode can be that electroless plating can be also the mode of metallide.
Step 10 six, green paint coating
Referring to Figure 51, at the back side of metal substrate, carry out the coating of green paint, to metallic circuit layer is sealed.
Step 10 seven, metal substrate front face are removed the green paint of part
Referring to Figure 52, utilize exposure imaging equipment that the green paint of part figure is carried out to graph exposure, develops and removes in metal substrate front, the regional graphics of electroplating to expose the positive follow-up needs of metal substrate.
Step 10 eight, chemical etching
Referring to Figure 53, chemical etching is carried out in the region that completes exposure imaging in step 10 seven, chemical etching is until inert metal line layer, and etching solution can adopt copper chloride or iron chloride.
Step 10 nine, plated metal line layer
Referring to Figure 54, individual layer or the metallic circuit layer of multilayer on inert metal line layer plated surface, coating kind can be copper nickel gold, copper nickeline, porpezite, gold or copper etc., electro-plating method can be electroless plating or metallide.
Step 2 ten, green paint coating
Referring to Figure 55, in the front of metal substrate, carry out the coating of green paint, to metallic circuit layer is sealed.
Step 2 11, metal substrate front face are removed the green paint of part
Referring to Figure 56, utilize exposure imaging equipment that the green paint of part figure is carried out to graph exposure, develops and removes in metal substrate front, the regional graphics of electroplating to expose the positive follow-up needs of metal substrate.
Step 2 12, plated metal line layer
Referring to Figure 57, in the positive region of removing the green paint of part of metal substrate, electroplate one deck conducting metal, plating mode can be electroless plating or metallide mode.
Step 2 13, green paint coating
Referring to Figure 58, in the front of metal substrate, carry out the coating of green paint, to metallic circuit layer is sealed.
Step 2 14, metal substrate front face are removed the green paint of part
Referring to Figure 59, utilize exposure imaging equipment that the green paint of part figure is carried out to graph exposure, develops and removes in metal substrate front, the regional graphics of electroplating to expose the positive follow-up needs of metal substrate.
Step 2 15, be covered with circuit web plate
Referring to Figure 60, in metal substrate front, be covered with circuit web plate.
Step 2 16, metallization pre-treatment
Referring to Figure 61, in metal substrate front, carry out the metallization pre-treatment of plated metal line layer, metallization pre-treatment can be used coating process (mode of spray pattern, mode of printing, showering mode, immersion etc.).
Step 2 17, remove circuit web plate
Referring to Figure 62, the circuit web plate of step 2 15 is removed.
Step 2 18, plated metal line layer
Referring to Figure 63, in metal substrate front, plate the metallic circuit layer of individual layer or multilayer, after completing, metal plating on metal substrate, forms corresponding Ji Dao and pin, coating kind can be copper nickel gold, copper nickeline, porpezite, gold or copper etc., and electro-plating method can be electroless plating or metallide.
Step 2 19, load and chip bottom are filled
Referring to Figure 64, at step 2 Shi Baji island front flip-chip and chip bottom filling epoxy resin.
Step 3 ten, seal
Referring to Figure 65; by completing metal substrate front after load routing, carry out plastic packaging material and seal operation; object is to utilize epoxy resin that chip and metal wire are fixed and are protected; encapsulating method adopts mould encapsulating, spraying method Huo Shua Rubber mode to carry out, and plastic packaging material can adopt filler or packless epoxy resin.
Step 3 11, the perforate of the metal substrate back side
Referring to Figure 66, the surface of sealing in advance green paint at the metal substrate back side is carried out the follow-up region that will plant Metal Ball and is carried out perforate operation, can adopt dry laser sintering or the method for wet chemistry corrosion to carry out perforate.
Step 3 12, cleaning
Referring to Figure 67, at the metal substrate back side, green paint tapping carries out the cleaning of oxidation material, organic substance, can carry out the coating of coat of metal simultaneously, and coat of metal adopts oxidation-resistant material.
Step 3 13, plant ball
Referring to Figure 68, at the metal substrate back side, green paint tapping is implanted into Metal Ball, Metal Ball is contacted with the pin back side, can adopt conventional ball attachment machine or adopt metal paste printing after high-temperature digestion, can form orbicule again, the material of Metal Ball can be pure tin or ashbury metal.
Step 3 14, cutting finished product
Referring to Figure 69, step 3 13 is completed to the semi-finished product of planting ball and carry out cutting operation, more than cuttings of plastic-sealed body module that script integrated in array aggregate mode and contain chip are independent, after making the first etching of single-chip upside-down mounting, encapsulate base island embedded encapsulating structure, can adopt conventional diamond blade and conventional cutting equipment.
As shown in Figure 70, the present invention also provides the two-sided three-dimensional circuit of a kind of flip-chip first to lose the encapsulating structure of rear envelope, described encapsulating structure comprises chip 9, base island 14 and pin 15, the positive upside-down mounting Yu Ji island 14 of described chip 9 and pin 15 fronts, between 14 fronts, described chip 9 Yu Ji island, bottom and be provided with underfill 8 between chip 9 bottoms and pin 15 fronts, the region of 14 peripheries, described base island, region between base island 14 and pin 15, region between pin 15 and pin 15, the region on base island 14 and pin 15 tops, the region of base island 14 and pin 15 bottoms and chip 9 outer encapsulatings have green paint 3 and plastic packaging material 10, on the green paint 3 at described pin 15 back sides, offer aperture 11, described aperture 11 is connected with pin 15 back sides, in described aperture 11, be provided with Metal Ball 13, between described Metal Ball 13 and pin 15 back sides, be provided with coat of metal 12, described Metal Ball 13 adopts tin or tin alloy material.
Claims (2)
1. the two-sided three-dimensional circuit of flip-chip first loses a rear envelope manufacture method, said method comprising the steps of:
Step 1, get metal substrate
Step 2, the pre-copper facing of metallic substrate surfaces
Step 3, green paint coating
At the metal substrate front and the back side that complete preplating copper material film, carry out respectively the coating of green paint;
The green paint of part is removed at step 4, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 3 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure;
Step 5, plating inert metal line layer
In step 4, in the region of metal substrate back side removal part photoresistance film, electroplate inert metal line layer;
Step 6, plated metal line layer
Multilayer or single-layer metal line layer on inert metal line layer plated surface in step 5;
Step 7, green paint coating
At the back side of metal substrate, carry out the coating of green paint;
The green paint of part is removed at step 8, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 4 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure;
Step 9, plated metal line layer
Multilayer or single-layer metal line layer on metallic circuit layer plated surface in step 6;
Step 10, green paint coating
At the back side of metal substrate, carry out the coating of green paint;
The green paint of part is removed at step 11, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 10 is completed to green paint coating is carried out graph exposure, is developed and remove the green paint of part figure;
Step 12, be covered with circuit web plate
At the metal substrate back side, be covered with circuit web plate;
Step 13, metallization pre-treatment
At substrate back, carry out the metallization pre-treatment of plated metal line layer;
Step 14, remove circuit web plate
The circuit web plate of step 12 is removed;
Step 15, plated metal line layer
At the metal substrate back side, plate multilayer or single-layer metal line layer;
Step 10 six, green paint coating
At the back side of metal substrate, carry out the coating of green paint;
Step 10 seven, metal substrate front face are removed the green paint of part
Utilize exposure imaging equipment to be carried out to graph exposure, develop and remove the green paint of part figure in metal substrate front;
Step 10 eight, chemical etching
Chemical etching is carried out in the region that completes exposure imaging in step 10 seven;
Step 10 nine, plated metal line layer
Individual layer or the metallic circuit layer of multilayer on inert metal line layer plated surface;
Step 2 ten, green paint coating
In the front of metal substrate, carry out the coating of green paint;
Step 2 11, metal substrate front face are removed the green paint of part
Utilize exposure imaging equipment to be carried out to graph exposure, develop and remove the green paint of part figure in metal substrate front;
Step 2 12, plated metal line layer
In the positive region of removing the green paint of part of metal substrate, electroplate one deck conducting metal;
Step 2 13, green paint coating
In the front of metal substrate, carry out the coating of green paint;
Step 2 14, metal substrate front face are removed the green paint of part
Utilize exposure imaging equipment to be carried out to graph exposure, develop and remove the green paint of part figure in metal substrate front;
Step 2 15, be covered with circuit web plate
In metal substrate front, be covered with circuit web plate;
Step 2 16, metallization pre-treatment
In metal substrate front, carry out the metallization pre-treatment of plated metal line layer;
Step 2 17, remove circuit web plate
The circuit web plate of step 2 15 is removed;
Step 2 18, plated metal line layer
In metal substrate front, plate the metallic circuit layer of individual layer or multilayer, after metal plating completes, on metal substrate, form corresponding pin Huo Ji island and pin;
Step 2 19, load and chip bottom are filled
Front, the positive Huo Ji of pin island and pin front flip-chip and chip bottom filling epoxy resin in step 2 18;
Step 3 ten, seal
By completing metal substrate front after load, carry out plastic packaging material and seal operation;
Step 3 11, the perforate of the metal substrate back side
The surface of sealing in advance green paint at the metal substrate back side is carried out the follow-up region that will plant Metal Ball and is carried out perforate operation;
Step 3 12, cleaning
At the metal substrate back side, green paint tapping carries out the cleaning of oxidation material, organic substance;
Step 3 13, plant ball
At the metal substrate back side, green paint tapping is implanted into Metal Ball;
Step 3 14, cutting finished product
Step 3 13 is completed to the semi-finished product of planting ball and carry out cutting operation, make more than cuttings of plastic-sealed body module of originally integrating in array aggregate mode and containing chip independent, encapsulate base island embedded encapsulating structure after making the etching of single-chip upside-down mounting elder generation.
2. the two-sided three-dimensional circuit of a kind of flip-chip according to claim 1 first loses rear envelope manufacture method, it is characterized in that: the green paint tapping in 12 pairs of metal substrate back sides of described step 3 cleans and carries out coat of metal coating simultaneously.
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|---|---|---|---|
| CN201210189891.0A CN102723292B (en) | 2012-06-09 | 2012-06-09 | Flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip double-faced three-dimensional circuit encapsulation structure |
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| CN201210189891.0A CN102723292B (en) | 2012-06-09 | 2012-06-09 | Flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip double-faced three-dimensional circuit encapsulation structure |
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| CN102723292A CN102723292A (en) | 2012-10-10 |
| CN102723292B true CN102723292B (en) | 2014-09-17 |
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| CN103400771B (en) * | 2013-08-06 | 2016-06-29 | 江阴芯智联电子科技有限公司 | First sealing chip upside-down mounting three-dimensional systematic metal circuit board structure and process after erosion |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1691314A (en) * | 2004-04-21 | 2005-11-02 | 美龙翔微电子科技（深圳）有限公司 | Flip ball grid array packaging base plate and making technique thereof |
| CN102005432A (en) * | 2010-09-30 | 2011-04-06 | 江苏长电科技股份有限公司 | Packaging structure with four pin-less sides and packaging method thereof |
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| JP4373122B2 (en) * | 2003-04-28 | 2009-11-25 | 大日本印刷株式会社 | Resin-sealed semiconductor device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1691314A (en) * | 2004-04-21 | 2005-11-02 | 美龙翔微电子科技（深圳）有限公司 | Flip ball grid array packaging base plate and making technique thereof |
| CN102005432A (en) * | 2010-09-30 | 2011-04-06 | 江苏长电科技股份有限公司 | Packaging structure with four pin-less sides and packaging method thereof |
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| JP特开2004-327903A 2004.11.18 |
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