CN1671881A - 高ptf溅镀靶和制造方法 - Google Patents

高ptf溅镀靶和制造方法 Download PDF

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Publication number
CN1671881A
CN1671881A CNA038180790A CN03818079A CN1671881A CN 1671881 A CN1671881 A CN 1671881A CN A038180790 A CNA038180790 A CN A038180790A CN 03818079 A CN03818079 A CN 03818079A CN 1671881 A CN1671881 A CN 1671881A
Authority
CN
China
Prior art keywords
ptf
target
hits
chemical constitution
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038180790A
Other languages
English (en)
Chinese (zh)
Inventor
张文军
贝恩德·孔克尔
阿南德·德奥杜特
迈克尔·巴托洛梅乌斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Inc
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of CN1671881A publication Critical patent/CN1671881A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/09—Mixtures of metallic powders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
CNA038180790A 2002-06-07 2003-05-14 高ptf溅镀靶和制造方法 Pending CN1671881A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/163,620 US20030228238A1 (en) 2002-06-07 2002-06-07 High-PTF sputtering targets and method of manufacturing
US10/163,620 2002-06-07

Publications (1)

Publication Number Publication Date
CN1671881A true CN1671881A (zh) 2005-09-21

Family

ID=29710011

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038180790A Pending CN1671881A (zh) 2002-06-07 2003-05-14 高ptf溅镀靶和制造方法

Country Status (7)

Country Link
US (1) US20030228238A1 (ja)
EP (1) EP1511878A2 (ja)
JP (1) JP2005530925A (ja)
CN (1) CN1671881A (ja)
AU (1) AU2003232135A1 (ja)
SG (2) SG135050A1 (ja)
WO (1) WO2003104521A2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104018128A (zh) * 2014-05-29 2014-09-03 贵研铂业股份有限公司 一种镍铂合金溅射靶材及其制备方法
CN110791736A (zh) * 2018-08-01 2020-02-14 合肥江丰电子材料有限公司 靶材清洗装置及其工作方法
CN112941473A (zh) * 2021-01-28 2021-06-11 宁波江丰电子材料股份有限公司 一种MoTiNi合金靶材及其制备方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141208B2 (en) * 2003-04-30 2006-11-28 Hitachi Metals, Ltd. Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device
US20060042938A1 (en) * 2004-09-01 2006-03-02 Heraeus, Inc. Sputter target material for improved magnetic layer
US20060110626A1 (en) * 2004-11-24 2006-05-25 Heraeus, Inc. Carbon containing sputter target alloy compositions
US7494617B2 (en) * 2005-04-18 2009-02-24 Heraeus Inc. Enhanced formulation of cobalt alloy matrix compositions
US20070017803A1 (en) * 2005-07-22 2007-01-25 Heraeus, Inc. Enhanced sputter target manufacturing method
JP4699194B2 (ja) * 2005-12-15 2011-06-08 山陽特殊製鋼株式会社 ＦｅＣｏＢ系スパッタリングターゲット材の製造方法
TWI369406B (en) * 2006-10-10 2012-08-01 Hitachi Metals Ltd Co-fe-zr based alloy sputtering target material and process for production thereof
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
JP5359890B2 (ja) * 2008-02-18 2013-12-04 日立金属株式会社 軟磁性膜形成用Ｆｅ−Ｃｏ系合金スパッタリングターゲット材
WO2009119812A1 (ja) 2008-03-28 2009-10-01 日鉱金属株式会社 非磁性材粒子分散型強磁性材スパッタリングターゲット
JP5403418B2 (ja) * 2008-09-22 2014-01-29 日立金属株式会社 Ｃｏ−Ｆｅ−Ｎｉ系合金スパッタリングターゲット材の製造方法
JP4673448B2 (ja) 2009-03-27 2011-04-20 Ｊｘ日鉱日石金属株式会社 非磁性材粒子分散型強磁性材スパッタリングターゲット
JP5370917B2 (ja) * 2009-04-20 2013-12-18 日立金属株式会社 Ｆｅ−Ｃｏ−Ｎｉ系合金スパッタリングターゲット材の製造方法
MY148731A (en) 2009-08-06 2013-05-31 Jx Nippon Mining & Metals Corp Inorganic-particle-dispersed sputtering target
US9249497B2 (en) 2010-03-19 2016-02-02 Jx Nippon Mining & Metals Corporation Ni alloy sputtering target, Ni alloy thin film and Ni silicide film
JP5459494B2 (ja) * 2010-03-28 2014-04-02 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP4885333B1 (ja) * 2010-09-03 2012-02-29 Ｊｘ日鉱日石金属株式会社 強磁性材スパッタリングターゲット
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
JP6581780B2 (ja) * 2015-02-09 2019-09-25 山陽特殊製鋼株式会社 スパッタ性に優れたＮｉ系ターゲット材
JP6800580B2 (ja) * 2015-08-21 2020-12-16 Ｊｘ金属株式会社 Ｆｅ−Ｃｏ基合金スパッタリングターゲット

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3494302B2 (ja) * 1991-03-26 2004-02-09 日立金属株式会社 Ｃｏ−Ｃｒ−Ｐｔ系磁気記録媒体用ターゲット
JPH0567323A (ja) * 1991-09-06 1993-03-19 Denki Kagaku Kogyo Kk 垂直磁気記録媒体及びその製造方法
JPH08311642A (ja) * 1995-03-10 1996-11-26 Toshiba Corp マグネトロンスパッタリング法及びスパッタリングターゲット
US5778302A (en) * 1995-09-14 1998-07-07 Tosoh Smd, Inc. Methods of making Cr-Me sputter targets and targets produced thereby
JP4142753B2 (ja) * 1996-12-26 2008-09-03 株式会社東芝 スパッタターゲット、スパッタ装置、半導体装置およびその製造方法
US6391172B2 (en) * 1997-08-26 2002-05-21 The Alta Group, Inc. High purity cobalt sputter target and process of manufacturing the same
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6086725A (en) * 1998-04-02 2000-07-11 Applied Materials, Inc. Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
JP2000282229A (ja) * 1999-03-29 2000-10-10 Hitachi Metals Ltd ＣｏＰｔ系スパッタリングターゲットおよびその製造方法ならびにこれを用いた磁気記録膜およびＣｏＰｔ系磁気記録媒体
EP1103625A4 (en) * 1999-05-14 2003-05-14 Migaku Takahashi MAGNETIC ALLOY, MAGNETIC RECORDING MEDIUM AND MANUFACTURING METHOD THEREOF, AND TARGET FOR MAGNETIC FILM FORMATION AND MAGNETIC RECORDING DEVICE
US6042777A (en) * 1999-08-03 2000-03-28 Sony Corporation Manufacturing of high density intermetallic sputter targets
US6596132B1 (en) * 1999-09-22 2003-07-22 Delphi Technologies, Inc. Production of ternary shape-memory alloy films by sputtering using a hot pressed target
US6176944B1 (en) * 1999-11-01 2001-01-23 Praxair S.T. Technology, Inc. Method of making low magnetic permeability cobalt sputter targets
JP4297585B2 (ja) * 2000-02-28 2009-07-15 株式会社日立グローバルストレージテクノロジーズ 磁気記録再生装置
US6682636B2 (en) * 2000-08-18 2004-01-27 Honeywell International Inc. Physical vapor deposition targets and methods of formation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104018128A (zh) * 2014-05-29 2014-09-03 贵研铂业股份有限公司 一种镍铂合金溅射靶材及其制备方法
CN104018128B (zh) * 2014-05-29 2016-08-24 贵研铂业股份有限公司 一种镍铂合金溅射靶材及其制备方法
CN110791736A (zh) * 2018-08-01 2020-02-14 合肥江丰电子材料有限公司 靶材清洗装置及其工作方法
CN112941473A (zh) * 2021-01-28 2021-06-11 宁波江丰电子材料股份有限公司 一种MoTiNi合金靶材及其制备方法
CN112941473B (zh) * 2021-01-28 2022-06-17 宁波江丰电子材料股份有限公司 一种MoTiNi合金靶材及其制备方法

Also Published As

Publication number Publication date
AU2003232135A1 (en) 2003-12-22
EP1511878A2 (en) 2005-03-09
SG131798A1 (en) 2007-05-28
SG135050A1 (en) 2007-09-28
JP2005530925A (ja) 2005-10-13
AU2003232135A8 (en) 2003-12-22
WO2003104521A2 (en) 2003-12-18
WO2003104521A3 (en) 2004-06-10
US20030228238A1 (en) 2003-12-11

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