CN1662993A - 用于流水线存储器的有效读取/写入方法 - Google Patents
用于流水线存储器的有效读取/写入方法 Download PDFInfo
- Publication number
- CN1662993A CN1662993A CN038145316A CN03814531A CN1662993A CN 1662993 A CN1662993 A CN 1662993A CN 038145316 A CN038145316 A CN 038145316A CN 03814531 A CN03814531 A CN 03814531A CN 1662993 A CN1662993 A CN 1662993A
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- CN
- China
- Prior art keywords
- memory
- latch
- buffer
- buffer element
- storage system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 252
- 238000000034 method Methods 0.000 title claims abstract description 75
- 239000000872 buffer Substances 0.000 claims description 71
- 238000002679 ablation Methods 0.000 claims description 21
- 230000005055 memory storage Effects 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims description 4
- 230000010267 cellular communication Effects 0.000 claims description 2
- 230000001052 transient effect Effects 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 27
- 238000010586 diagram Methods 0.000 description 27
- 238000006073 displacement reaction Methods 0.000 description 10
- 238000003491 array Methods 0.000 description 9
- 230000003139 buffering effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000002596 correlated effect Effects 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000011079 streamline operation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/38—Concurrent instruction execution, e.g. pipeline or look ahead
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Software Systems (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Abstract
Description
Claims (38)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/152,536 | 2002-05-21 | ||
US10/152,536 US6751129B1 (en) | 2002-05-21 | 2002-05-21 | Efficient read, write methods for multi-state memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1662993A true CN1662993A (zh) | 2005-08-31 |
CN100444279C CN100444279C (zh) | 2008-12-17 |
Family
ID=29582065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038145316A Expired - Fee Related CN100444279C (zh) | 2002-05-21 | 2003-02-20 | 用于流水线存储器的有效读取/写入方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6751129B1 (zh) |
JP (2) | JP4480571B2 (zh) |
KR (1) | KR100990541B1 (zh) |
CN (1) | CN100444279C (zh) |
AU (1) | AU2003213169A1 (zh) |
DE (1) | DE10392692T5 (zh) |
GB (1) | GB2406196B (zh) |
WO (1) | WO2003100787A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101740124A (zh) * | 2008-11-06 | 2010-06-16 | 力晶半导体股份有限公司 | 非易失性半导体存储装置用的分页缓冲电路及其控制方法 |
CN101364444B (zh) * | 2008-02-05 | 2011-05-11 | 威盛电子股份有限公司 | 控制方法及运用该控制方法的存储器及处理系统 |
Families Citing this family (40)
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US8397269B2 (en) | 2002-08-13 | 2013-03-12 | Microsoft Corporation | Fast digital channel changing |
US7523482B2 (en) * | 2002-08-13 | 2009-04-21 | Microsoft Corporation | Seamless digital channel changing |
EP1543529B1 (en) * | 2002-09-24 | 2009-11-04 | SanDisk Corporation | Non-volatile memory and its sensing method |
US7196931B2 (en) * | 2002-09-24 | 2007-03-27 | Sandisk Corporation | Non-volatile memory and method with reduced source line bias errors |
US6987693B2 (en) * | 2002-09-24 | 2006-01-17 | Sandisk Corporation | Non-volatile memory and method with reduced neighboring field errors |
US7046568B2 (en) * | 2002-09-24 | 2006-05-16 | Sandisk Corporation | Memory sensing circuit and method for low voltage operation |
US7443757B2 (en) * | 2002-09-24 | 2008-10-28 | Sandisk Corporation | Non-volatile memory and method with reduced bit line crosstalk errors |
US7327619B2 (en) * | 2002-09-24 | 2008-02-05 | Sandisk Corporation | Reference sense amplifier for non-volatile memory |
US7324393B2 (en) * | 2002-09-24 | 2008-01-29 | Sandisk Corporation | Method for compensated sensing in non-volatile memory |
US7603689B2 (en) * | 2003-06-13 | 2009-10-13 | Microsoft Corporation | Fast start-up for digital video streams |
US6956770B2 (en) * | 2003-09-17 | 2005-10-18 | Sandisk Corporation | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes |
US7064980B2 (en) * | 2003-09-17 | 2006-06-20 | Sandisk Corporation | Non-volatile memory and method with bit line coupled compensation |
US7562375B2 (en) | 2003-10-10 | 2009-07-14 | Microsoft Corporation | Fast channel change |
US7444419B2 (en) * | 2003-10-10 | 2008-10-28 | Microsoft Corporation | Media stream scheduling for hiccup-free fast-channel-change in the presence of network chokepoints |
US7430222B2 (en) * | 2004-02-27 | 2008-09-30 | Microsoft Corporation | Media stream splicer |
US7640352B2 (en) * | 2004-09-24 | 2009-12-29 | Microsoft Corporation | Methods and systems for presentation of media obtained from a media stream |
DE102004055013A1 (de) * | 2004-11-15 | 2006-05-24 | Infineon Technologies Ag | Computereinrichtung |
US7477653B2 (en) * | 2004-12-10 | 2009-01-13 | Microsoft Corporation | Accelerated channel change in rate-limited environments |
US7656710B1 (en) | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
US20070110503A1 (en) * | 2005-10-31 | 2007-05-17 | Glover J S | Dispensing brush with replaceable cartridge/handle part |
US8135040B2 (en) * | 2005-11-30 | 2012-03-13 | Microsoft Corporation | Accelerated channel change |
US7489549B2 (en) * | 2006-06-22 | 2009-02-10 | Sandisk Corporation | System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
US7486561B2 (en) * | 2006-06-22 | 2009-02-03 | Sandisk Corporation | Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
US20080140724A1 (en) | 2006-12-06 | 2008-06-12 | David Flynn | Apparatus, system, and method for servicing object requests within a storage controller |
TWI348617B (en) * | 2007-08-09 | 2011-09-11 | Skymedi Corp | Non-volatile memory system and method for reading data therefrom |
WO2009140112A1 (en) * | 2008-05-13 | 2009-11-19 | Rambus Inc. | Fractional program commands for memory devices |
JP2012511789A (ja) * | 2008-12-09 | 2012-05-24 | ラムバス・インコーポレーテッド | 並行且つパイプライン化されたメモリ動作用の不揮発性メモリデバイス |
US9223514B2 (en) | 2009-09-09 | 2015-12-29 | SanDisk Technologies, Inc. | Erase suspend/resume for memory |
US8429436B2 (en) | 2009-09-09 | 2013-04-23 | Fusion-Io, Inc. | Apparatus, system, and method for power reduction in a storage device |
KR101829208B1 (ko) * | 2009-12-31 | 2018-02-20 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치의 동작 방법 |
US8984216B2 (en) | 2010-09-09 | 2015-03-17 | Fusion-Io, Llc | Apparatus, system, and method for managing lifetime of a storage device |
US9251058B2 (en) | 2010-09-28 | 2016-02-02 | SanDisk Technologies, Inc. | Servicing non-block storage requests |
US9263102B2 (en) | 2010-09-28 | 2016-02-16 | SanDisk Technologies, Inc. | Apparatus, system, and method for data transformations within a data storage device |
US10817502B2 (en) | 2010-12-13 | 2020-10-27 | Sandisk Technologies Llc | Persistent memory management |
US8527693B2 (en) | 2010-12-13 | 2013-09-03 | Fusion IO, Inc. | Apparatus, system, and method for auto-commit memory |
US10817421B2 (en) | 2010-12-13 | 2020-10-27 | Sandisk Technologies Llc | Persistent data structures |
US9208071B2 (en) | 2010-12-13 | 2015-12-08 | SanDisk Technologies, Inc. | Apparatus, system, and method for accessing memory |
US9047178B2 (en) | 2010-12-13 | 2015-06-02 | SanDisk Technologies, Inc. | Auto-commit memory synchronization |
US9218278B2 (en) | 2010-12-13 | 2015-12-22 | SanDisk Technologies, Inc. | Auto-commit memory |
KR102460281B1 (ko) * | 2017-11-24 | 2022-10-31 | 프라운호퍼 게젤샤프트 쭈르 푀르데룽 데어 안겐반텐 포르슝 에. 베. | 다중 입력 파이프 라인을 가진 데이터 버스 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2798485B2 (ja) * | 1990-07-26 | 1998-09-17 | 日本電気アイシーマイコンシステム株式会社 | 書き込み可能不揮発性メモリ |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5592435A (en) | 1994-06-03 | 1997-01-07 | Intel Corporation | Pipelined read architecture for memory |
JP3013714B2 (ja) | 1994-09-28 | 2000-02-28 | 日本電気株式会社 | 半導体記憶装置 |
US5655105A (en) | 1995-06-30 | 1997-08-05 | Micron Technology, Inc. | Method and apparatus for multiple latency synchronous pipelined dynamic random access memory |
US5950219A (en) | 1996-05-02 | 1999-09-07 | Cirrus Logic, Inc. | Memory banks with pipelined addressing and priority acknowledging and systems and methods using the same |
JPH1064257A (ja) * | 1996-08-20 | 1998-03-06 | Sony Corp | 半導体記憶装置 |
US5890192A (en) * | 1996-11-05 | 1999-03-30 | Sandisk Corporation | Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM |
US5903496A (en) * | 1997-06-25 | 1999-05-11 | Intel Corporation | Synchronous page-mode non-volatile memory with burst order circuitry |
JPH1126095A (ja) * | 1997-06-30 | 1999-01-29 | Amp Japan Ltd | 電子制御スイッチ付コネクタ装置 |
KR100255152B1 (ko) * | 1997-06-30 | 2000-05-01 | 김영환 | 플래쉬 메모리 장치 |
JPH11162183A (ja) * | 1997-11-28 | 1999-06-18 | New Core Technology Kk | 不揮発性半導体多値メモリ装置 |
US6105106A (en) | 1997-12-31 | 2000-08-15 | Micron Technology, Inc. | Computer system, memory device and shift register including a balanced switching circuit with series connected transfer gates which are selectively clocked for fast switching times |
KR100351889B1 (ko) * | 1998-11-13 | 2002-11-18 | 주식회사 하이닉스반도체 | 카스(cas)레이턴시(latency) 제어 회로 |
KR100287542B1 (ko) | 1998-11-26 | 2001-04-16 | 윤종용 | 웨이브 파이프라인 스킴을 구비한 동기형 반도체 메모리 장치및 그것의 데이터 패스 제어 방법 |
JP3905990B2 (ja) | 1998-12-25 | 2007-04-18 | 株式会社東芝 | 記憶装置とその記憶方法 |
US6282556B1 (en) | 1999-10-08 | 2001-08-28 | Sony Corporation Of Japan | High performance pipelined data path for a media processor |
KR100391147B1 (ko) | 2000-10-24 | 2003-07-16 | 삼성전자주식회사 | 멀티 파이프라인 구조를 가지는 고속 동기 반도체 메모리및 그의 동작방법 |
-
2002
- 2002-05-21 US US10/152,536 patent/US6751129B1/en not_active Expired - Lifetime
-
2003
- 2003-02-20 CN CNB038145316A patent/CN100444279C/zh not_active Expired - Fee Related
- 2003-02-20 KR KR1020047018791A patent/KR100990541B1/ko not_active IP Right Cessation
- 2003-02-20 GB GB0425543A patent/GB2406196B/en not_active Expired - Fee Related
- 2003-02-20 JP JP2004508350A patent/JP4480571B2/ja not_active Expired - Fee Related
- 2003-02-20 WO PCT/US2003/005214 patent/WO2003100787A1/en active Application Filing
- 2003-02-20 DE DE10392692T patent/DE10392692T5/de not_active Ceased
- 2003-02-20 AU AU2003213169A patent/AU2003213169A1/en not_active Abandoned
-
2009
- 2009-05-18 JP JP2009120417A patent/JP2009259253A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101364444B (zh) * | 2008-02-05 | 2011-05-11 | 威盛电子股份有限公司 | 控制方法及运用该控制方法的存储器及处理系统 |
US8499115B2 (en) | 2008-02-05 | 2013-07-30 | Via Technologies, Inc. | Control method, memory, and processing system utilizing the same |
US8700844B2 (en) | 2008-02-05 | 2014-04-15 | Via Technologies, Inc. | Control method, memory, and processing system utilizing the same |
CN101740124A (zh) * | 2008-11-06 | 2010-06-16 | 力晶半导体股份有限公司 | 非易失性半导体存储装置用的分页缓冲电路及其控制方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050024278A (ko) | 2005-03-10 |
AU2003213169A1 (en) | 2003-12-12 |
JP2005527055A (ja) | 2005-09-08 |
JP2009259253A (ja) | 2009-11-05 |
JP4480571B2 (ja) | 2010-06-16 |
DE10392692T5 (de) | 2005-06-30 |
GB2406196A (en) | 2005-03-23 |
US6751129B1 (en) | 2004-06-15 |
WO2003100787A1 (en) | 2003-12-04 |
CN100444279C (zh) | 2008-12-17 |
GB2406196B (en) | 2006-05-03 |
GB0425543D0 (en) | 2004-12-22 |
KR100990541B1 (ko) | 2010-10-29 |
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Legal Events
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120327 |
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Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER NAME: SANDISK TECHNOLOGIES, INC. |
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Address after: American Texas Patentee after: Sandisk Corp. Address before: American Texas Patentee before: Sandisk Corp. |
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C56 | Change in the name or address of the patentee | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081217 Termination date: 20210220 |
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CF01 | Termination of patent right due to non-payment of annual fee |