CN1622219A - 自刷新振荡器 - Google Patents
自刷新振荡器 Download PDFInfo
- Publication number
- CN1622219A CN1622219A CNA2004100558137A CN200410055813A CN1622219A CN 1622219 A CN1622219 A CN 1622219A CN A2004100558137 A CNA2004100558137 A CN A2004100558137A CN 200410055813 A CN200410055813 A CN 200410055813A CN 1622219 A CN1622219 A CN 1622219A
- Authority
- CN
- China
- Prior art keywords
- self
- pass transistor
- nmos pass
- oscillator
- refresh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000737 periodic effect Effects 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000000052 comparative effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 101100191136 Arabidopsis thaliana PCMP-A2 gene Proteins 0.000 description 1
- 101100421142 Mus musculus Selenon gene Proteins 0.000 description 1
- 101100048260 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) UBX2 gene Proteins 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
- H03K3/0231—Astable circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40626—Temperature related aspects of refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4065—Low level details of refresh operations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR83899/2003 | 2003-11-25 | ||
KR83899/03 | 2003-11-25 | ||
KR1020030083899A KR100549621B1 (ko) | 2003-11-25 | 2003-11-25 | 셀프 리프래쉬용 오실레이터 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1622219A true CN1622219A (zh) | 2005-06-01 |
CN100433185C CN100433185C (zh) | 2008-11-12 |
Family
ID=34588039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100558137A Expired - Fee Related CN100433185C (zh) | 2003-11-25 | 2004-08-04 | 自刷新振荡器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6998901B2 (zh) |
KR (1) | KR100549621B1 (zh) |
CN (1) | CN100433185C (zh) |
TW (1) | TWI266314B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102075184A (zh) * | 2009-11-03 | 2011-05-25 | Arm有限公司 | 运行参数监控电路和方法 |
CN107342736A (zh) * | 2017-07-10 | 2017-11-10 | 长沙方星腾电子科技有限公司 | 一种振荡器电路 |
CN111145807A (zh) * | 2019-12-10 | 2020-05-12 | 深圳市国微电子有限公司 | 一种3d堆叠存储器的温控自刷新方法及温控自刷新电路 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100631167B1 (ko) * | 2004-12-30 | 2006-10-02 | 주식회사 하이닉스반도체 | 셀프 리프레쉬 주기 발생장치 및 그 오실레이션 신호발생방법 |
US7564274B2 (en) * | 2005-02-24 | 2009-07-21 | Icera, Inc. | Detecting excess current leakage of a CMOS device |
KR100733471B1 (ko) * | 2005-02-28 | 2007-06-28 | 주식회사 하이닉스반도체 | 반도체 기억 소자의 지연 고정 루프 회로 및 그 제어 방법 |
US20070069789A1 (en) * | 2005-09-29 | 2007-03-29 | Hynix Semiconductor Inc. | Flip-flop circuit |
JP4832096B2 (ja) * | 2006-02-09 | 2011-12-07 | 株式会社 日立ディスプレイズ | 表示装置 |
KR101046994B1 (ko) * | 2008-12-23 | 2011-07-06 | 주식회사 하이닉스반도체 | 리프레쉬 주기조절회로 |
US8710820B2 (en) | 2010-03-31 | 2014-04-29 | Crane Electronics, Inc. | Switched capacitor hold-up scheme for constant boost output voltage |
EP2678930B1 (en) | 2011-02-24 | 2020-04-08 | Crane Electronics, Inc. | Ac/dc power conversion system and method of manufacture of same |
US8885308B2 (en) | 2011-07-18 | 2014-11-11 | Crane Electronics, Inc. | Input control apparatus and method with inrush current, under and over voltage handling |
US8829868B2 (en) | 2011-07-18 | 2014-09-09 | Crane Electronics, Inc. | Power converter apparatus and method with output current sensing and compensation for current limit/current share operation |
US8890630B2 (en) * | 2011-07-18 | 2014-11-18 | Crane Electronics, Inc. | Oscillator apparatus and method with wide adjustable frequency range |
US8824167B2 (en) | 2011-07-18 | 2014-09-02 | Crane Electronics, Inc. | Self synchronizing power converter apparatus and method suitable for auxiliary bias for dynamic load applications |
CN103650345A (zh) | 2011-07-22 | 2014-03-19 | 辉达公司 | 部件分析系统及方法 |
US9425772B2 (en) | 2011-07-27 | 2016-08-23 | Nvidia Corporation | Coupling resistance and capacitance analysis systems and methods |
US8952705B2 (en) | 2011-11-01 | 2015-02-10 | Nvidia Corporation | System and method for examining asymetric operations |
US9448125B2 (en) | 2011-11-01 | 2016-09-20 | Nvidia Corporation | Determining on-chip voltage and temperature |
KR101900378B1 (ko) * | 2012-05-25 | 2018-11-02 | 에스케이하이닉스 주식회사 | 리프레쉬회로 |
KR101948899B1 (ko) * | 2012-05-25 | 2019-02-18 | 에스케이하이닉스 주식회사 | 주기신호생성회로 |
KR20130132186A (ko) * | 2012-05-25 | 2013-12-04 | 에스케이하이닉스 주식회사 | 주기신호생성회로 |
US8866551B2 (en) | 2012-09-10 | 2014-10-21 | Crane Electronics, Inc. | Impedance compensation for operational amplifiers used in variable environments |
CN103983809A (zh) | 2013-02-08 | 2014-08-13 | 辉达公司 | Pcb板及其在线测试结构以及该在线测试结构的制造方法 |
KR102193790B1 (ko) * | 2014-02-13 | 2020-12-21 | 에스케이하이닉스 주식회사 | 주기신호 생성회로를 포함하는 반도체 장치 및 이를 이용한 반도체 시스템 |
US9378802B2 (en) * | 2014-06-18 | 2016-06-28 | SK Hynix Inc. | Oscillator and memory device including the same |
US9831768B2 (en) | 2014-07-17 | 2017-11-28 | Crane Electronics, Inc. | Dynamic maneuvering configuration for multiple control modes in a unified servo system |
US9041378B1 (en) | 2014-07-17 | 2015-05-26 | Crane Electronics, Inc. | Dynamic maneuvering configuration for multiple control modes in a unified servo system |
US9230726B1 (en) | 2015-02-20 | 2016-01-05 | Crane Electronics, Inc. | Transformer-based power converters with 3D printed microchannel heat sink |
US9160228B1 (en) | 2015-02-26 | 2015-10-13 | Crane Electronics, Inc. | Integrated tri-state electromagnetic interference filter and line conditioning module |
US9293999B1 (en) | 2015-07-17 | 2016-03-22 | Crane Electronics, Inc. | Automatic enhanced self-driven synchronous rectification for power converters |
US9780635B1 (en) | 2016-06-10 | 2017-10-03 | Crane Electronics, Inc. | Dynamic sharing average current mode control for active-reset and self-driven synchronous rectification for power converters |
US9742183B1 (en) | 2016-12-09 | 2017-08-22 | Crane Electronics, Inc. | Proactively operational over-voltage protection circuit |
US9735566B1 (en) | 2016-12-12 | 2017-08-15 | Crane Electronics, Inc. | Proactively operational over-voltage protection circuit |
US9979285B1 (en) | 2017-10-17 | 2018-05-22 | Crane Electronics, Inc. | Radiation tolerant, analog latch peak current mode control for power converters |
US10425080B1 (en) | 2018-11-06 | 2019-09-24 | Crane Electronics, Inc. | Magnetic peak current mode control for radiation tolerant active driven synchronous power converters |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06169237A (ja) * | 1991-09-13 | 1994-06-14 | Mitsubishi Electric Corp | リングオシレータ回路 |
JP2998944B2 (ja) * | 1991-12-19 | 2000-01-17 | シャープ株式会社 | リングオシレータ |
JP2787639B2 (ja) * | 1992-08-07 | 1998-08-20 | 三菱電機株式会社 | パルス信号発生回路および半導体記憶装置 |
US5345195A (en) | 1992-10-22 | 1994-09-06 | United Memories, Inc. | Low power Vcc and temperature independent oscillator |
JPH06252642A (ja) | 1993-02-25 | 1994-09-09 | Tdk Corp | デジタル制御温度補償型水晶発振器の周波数特性の制御回路 |
JP3026474B2 (ja) | 1993-04-07 | 2000-03-27 | 株式会社東芝 | 半導体集積回路 |
JPH07141865A (ja) | 1993-06-28 | 1995-06-02 | Mitsubishi Electric Corp | 発振回路および半導体記憶装置 |
US5455801A (en) | 1994-07-15 | 1995-10-03 | Micron Semiconductor, Inc. | Circuit having a control array of memory cells and a current source and a method for generating a self-refresh timing signal |
KR0123827B1 (ko) | 1994-12-12 | 1997-11-25 | 김주용 | 반도체 소자의 셀프 리프레쉬 주기조절장치 |
JP3780030B2 (ja) | 1995-06-12 | 2006-05-31 | 株式会社ルネサステクノロジ | 発振回路およびdram |
US5990753A (en) * | 1996-01-29 | 1999-11-23 | Stmicroelectronics, Inc. | Precision oscillator circuit having a controllable duty cycle and related methods |
US5694090A (en) * | 1996-04-18 | 1997-12-02 | Micron Technology, Inc. | Voltage and temperature compensated oscillator frequency stabilizer |
US5659644A (en) | 1996-06-07 | 1997-08-19 | Lucent Technologies Inc. | Fiber light source with multimode fiber coupler |
US5760657A (en) * | 1996-09-30 | 1998-06-02 | Intel Corporation | Method and apparatus employing a process dependent impedance that compensates for manufacturing variations in a voltage controlled oscillator |
JP3535963B2 (ja) * | 1997-02-17 | 2004-06-07 | シャープ株式会社 | 半導体記憶装置 |
JPH1188127A (ja) | 1997-09-04 | 1999-03-30 | Texas Instr Japan Ltd | 発振回路 |
US6281760B1 (en) | 1998-07-23 | 2001-08-28 | Texas Instruments Incorporated | On-chip temperature sensor and oscillator for reduced self-refresh current for dynamic random access memory |
KR100363103B1 (ko) * | 1998-10-20 | 2003-02-19 | 주식회사 하이닉스반도체 | 셀프 리프레쉬 발진기 |
US6157180A (en) * | 1999-03-04 | 2000-12-05 | National Semiconductor Corporation | Power supply regulator circuit for voltage-controlled oscillator |
US6411157B1 (en) * | 2000-06-29 | 2002-06-25 | International Business Machines Corporation | Self-refresh on-chip voltage generator |
WO2002013384A1 (fr) * | 2000-08-04 | 2002-02-14 | Nec Corporation | Circuit de minuterie et memoire a semi-conducteur dans laquelle est incorpore ce circuit de minuterie |
DE10106486C2 (de) * | 2001-02-13 | 2003-02-27 | Infineon Technologies Ag | Oszillatorschaltung |
JP2003132676A (ja) * | 2001-10-29 | 2003-05-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100476891B1 (ko) * | 2002-04-18 | 2005-03-17 | 삼성전자주식회사 | 반도체 메모리 장치의 동작 모드에 따라 가변적인리스토어 시간을 갖는 리프레쉬 회로 및 그 리프레쉬 방법 |
-
2003
- 2003-11-25 KR KR1020030083899A patent/KR100549621B1/ko not_active IP Right Cessation
-
2004
- 2004-06-29 US US10/880,039 patent/US6998901B2/en active Active
- 2004-06-30 TW TW093119281A patent/TWI266314B/zh not_active IP Right Cessation
- 2004-08-04 CN CNB2004100558137A patent/CN100433185C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102075184A (zh) * | 2009-11-03 | 2011-05-25 | Arm有限公司 | 运行参数监控电路和方法 |
CN102075184B (zh) * | 2009-11-03 | 2015-01-07 | Arm有限公司 | 运行参数监控电路和方法 |
CN107342736A (zh) * | 2017-07-10 | 2017-11-10 | 长沙方星腾电子科技有限公司 | 一种振荡器电路 |
CN111145807A (zh) * | 2019-12-10 | 2020-05-12 | 深圳市国微电子有限公司 | 一种3d堆叠存储器的温控自刷新方法及温控自刷新电路 |
Also Published As
Publication number | Publication date |
---|---|
KR100549621B1 (ko) | 2006-02-03 |
US20050110592A1 (en) | 2005-05-26 |
US6998901B2 (en) | 2006-02-14 |
KR20050050206A (ko) | 2005-05-31 |
TW200518094A (en) | 2005-06-01 |
TWI266314B (en) | 2006-11-11 |
CN100433185C (zh) | 2008-11-12 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: YINGDI CO., LTD. Free format text: FORMER OWNER: SK HYNIX INC. Effective date: 20140327 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: SK HYNIX INC. Free format text: FORMER NAME: HAIRYOKSA SEMICONDUCTOR CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Gyeonggi Do, South Korea Patentee after: Sk Hynix Inc. Address before: Gyeonggi Do, South Korea Patentee before: HYNIX SEMICONDUCTOR Inc. |
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TR01 | Transfer of patent right |
Effective date of registration: 20140327 Address after: Seoul, South Kerean Patentee after: INTELLECTUAL DISCOVERY Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Sk Hynix Inc. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081112 Termination date: 20180804 |
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CF01 | Termination of patent right due to non-payment of annual fee |