CN1620755B - 形成基片中的器件的方法和薄膜体声共振器 - Google Patents

形成基片中的器件的方法和薄膜体声共振器 Download PDF

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Publication number
CN1620755B
CN1620755B CN028281632A CN02828163A CN1620755B CN 1620755 B CN1620755 B CN 1620755B CN 028281632 A CN028281632 A CN 028281632A CN 02828163 A CN02828163 A CN 02828163A CN 1620755 B CN1620755 B CN 1620755B
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China
Prior art keywords
substrate
layer
electrode
piezoelectric
seed layer
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Expired - Fee Related
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CN028281632A
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English (en)
Chinese (zh)
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CN1620755A (zh
Inventor
L·-P·王
Q·马
V·劳
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Intel Corp
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Intel Corp
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Publication of CN1620755A publication Critical patent/CN1620755A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/4908—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN028281632A 2001-12-17 2002-12-17 形成基片中的器件的方法和薄膜体声共振器 Expired - Fee Related CN1620755B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/023,594 US6662419B2 (en) 2001-12-17 2001-12-17 Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
US10/023,594 2001-12-17
PCT/US2002/040505 WO2003052929A1 (en) 2001-12-17 2002-12-17 Structure and fabrication procedures to achieve high-q and low insertion loss film bulk acoustic resonators

Publications (2)

Publication Number Publication Date
CN1620755A CN1620755A (zh) 2005-05-25
CN1620755B true CN1620755B (zh) 2011-06-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN028281632A Expired - Fee Related CN1620755B (zh) 2001-12-17 2002-12-17 形成基片中的器件的方法和薄膜体声共振器

Country Status (8)

Country Link
US (3) US6662419B2 (https=)
EP (1) EP1464116A1 (https=)
JP (1) JP4058001B2 (https=)
CN (1) CN1620755B (https=)
AU (1) AU2002357317A1 (https=)
MY (1) MY129488A (https=)
TW (1) TWI264139B (https=)
WO (1) WO2003052929A1 (https=)

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TWI632772B (zh) * 2016-10-17 2018-08-11 穩懋半導體股份有限公司 具有質量調整結構之體聲波共振器及其應用於體聲波濾波器

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US20020158947A1 (en) * 2001-04-27 2002-10-31 Isaku Kanno Piezoelectric element, method for manufacturing piezoelectric element, and ink jet head and ink jet recording apparatus having piezoelectric element
US6662419B2 (en) * 2001-12-17 2003-12-16 Intel Corporation Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
US20030119308A1 (en) * 2001-12-20 2003-06-26 Geefay Frank S. Sloped via contacts
US6828713B2 (en) * 2002-07-30 2004-12-07 Agilent Technologies, Inc Resonator with seed layer
US6816035B2 (en) * 2002-08-08 2004-11-09 Intel Corporation Forming film bulk acoustic resonator filters
WO2004088840A1 (ja) * 2003-03-31 2004-10-14 Ube Industries, Ltd. 圧電薄膜デバイス及びその製造方法
US6954121B2 (en) * 2003-06-09 2005-10-11 Agilent Technologies, Inc. Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method
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JP4373949B2 (ja) * 2004-04-20 2009-11-25 株式会社東芝 薄膜圧電共振器及びその製造方法
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JP5319491B2 (ja) * 2009-10-22 2013-10-16 太陽誘電株式会社 圧電薄膜共振子
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TWI493868B (zh) * 2013-01-02 2015-07-21 Ind Tech Res Inst 微機電共振裝置
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US9374059B1 (en) * 2015-01-06 2016-06-21 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Film bulk acoustic resonator filter
KR101730335B1 (ko) * 2015-01-27 2017-04-27 주하이 어드밴스드 칩 캐리어스 앤드 일렉트로닉 서브스트레이트 솔루션즈 테크놀러지즈 컴퍼니 리미티드 필름 벌크 음향 공진기 필터 제조 방법
US11411169B2 (en) * 2017-10-16 2022-08-09 Akoustis, Inc. Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
US11316496B2 (en) * 2016-03-11 2022-04-26 Akoustis, Inc. Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material
US11411168B2 (en) 2017-10-16 2022-08-09 Akoustis, Inc. Methods of forming group III piezoelectric thin films via sputtering
US11832521B2 (en) * 2017-10-16 2023-11-28 Akoustis, Inc. Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers
US11895920B2 (en) 2016-08-15 2024-02-06 Akoustis, Inc. Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
US10389331B2 (en) * 2017-03-24 2019-08-20 Zhuhai Crystal Resonance Technologies Co., Ltd. Single crystal piezoelectric RF resonators and filters
US10466572B2 (en) * 2017-03-24 2019-11-05 Zhuhai Crystal Resonance Technologies Co., Ltd. Method of fabrication for single crystal piezoelectric RF resonators and filters
CN107809221B (zh) * 2017-09-27 2021-05-11 佛山市艾佛光通科技有限公司 一种空腔型薄膜体声波谐振器及其制备方法
US11856858B2 (en) 2017-10-16 2023-12-26 Akoustis, Inc. Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films
JP7298991B2 (ja) * 2018-01-22 2023-06-27 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
CN110120793B (zh) * 2018-02-05 2024-11-12 武汉衍熙微器件有限公司 具有非c轴优选压电层的薄膜体声波谐振器
DE112020003868T5 (de) * 2019-08-15 2022-06-15 Akoustis, Inc. Verfahren zum Ausbilden von piezoelektrischen Dünnfilmen der Gruppe III durch Entfernen von Abschnitten des zuerst gesputterten Materials
US11618968B2 (en) 2020-02-07 2023-04-04 Akoustis, Inc. Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers
US12102010B2 (en) 2020-03-05 2024-09-24 Akoustis, Inc. Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices
WO2021220544A1 (ja) * 2020-04-30 2021-11-04 株式会社村田製作所 圧電振動子及びそれを備える圧電発振器
CN111711900B (zh) * 2020-07-09 2021-12-10 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
TWI632772B (zh) * 2016-10-17 2018-08-11 穩懋半導體股份有限公司 具有質量調整結構之體聲波共振器及其應用於體聲波濾波器

Also Published As

Publication number Publication date
JP2006503448A (ja) 2006-01-26
US20040104640A1 (en) 2004-06-03
AU2002357317A1 (en) 2003-06-30
US6861783B2 (en) 2005-03-01
US20050140246A1 (en) 2005-06-30
US7116034B2 (en) 2006-10-03
US6662419B2 (en) 2003-12-16
CN1620755A (zh) 2005-05-25
TW200301576A (en) 2003-07-01
TWI264139B (en) 2006-10-11
JP4058001B2 (ja) 2008-03-05
EP1464116A1 (en) 2004-10-06
US20030112095A1 (en) 2003-06-19
MY129488A (en) 2007-04-30
WO2003052929A1 (en) 2003-06-26

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