CN1612050A - 扩展光刻模拟积分范围的方法 - Google Patents
扩展光刻模拟积分范围的方法 Download PDFInfo
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- CN1612050A CN1612050A CNA2004100870858A CN200410087085A CN1612050A CN 1612050 A CN1612050 A CN 1612050A CN A2004100870858 A CNA2004100870858 A CN A2004100870858A CN 200410087085 A CN200410087085 A CN 200410087085A CN 1612050 A CN1612050 A CN 1612050A
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- China
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/694,466 | 2003-10-27 | ||
US10/694,466 US7010776B2 (en) | 2003-10-27 | 2003-10-27 | Extending the range of lithographic simulation integrals |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1612050A true CN1612050A (zh) | 2005-05-04 |
CN1300639C CN1300639C (zh) | 2007-02-14 |
Family
ID=34522608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100870858A Expired - Fee Related CN1300639C (zh) | 2003-10-27 | 2004-10-22 | 扩展光刻模拟积分范围的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7010776B2 (zh) |
JP (1) | JP4395048B2 (zh) |
CN (1) | CN1300639C (zh) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7293249B2 (en) * | 2002-01-31 | 2007-11-06 | Juan Andres Torres Robles | Contrast based resolution enhancement for photolithographic processing |
US7234130B2 (en) * | 2004-02-25 | 2007-06-19 | James Word | Long range corrections in integrated circuit layout designs |
US7861207B2 (en) | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
JP2007536581A (ja) | 2004-05-07 | 2007-12-13 | メンター・グラフィクス・コーポレーション | プロセス変動バンドを用いた集積回路レイアウト設計法 |
US7240305B2 (en) * | 2004-06-02 | 2007-07-03 | Lippincott George P | OPC conflict identification and edge priority system |
US7278129B2 (en) * | 2004-09-09 | 2007-10-02 | Micronic Laser Systems Ab | Healing algorithm |
US7228522B2 (en) * | 2004-09-29 | 2007-06-05 | Synopsys, Inc. | Edge-based proximity correction |
US7207029B2 (en) * | 2004-09-29 | 2007-04-17 | Synopsys, Inc. | Calculating etch proximity-correction using image-precision techniques |
US8037429B2 (en) * | 2005-03-02 | 2011-10-11 | Mentor Graphics Corporation | Model-based SRAF insertion |
JP4744980B2 (ja) | 2005-08-25 | 2011-08-10 | 株式会社東芝 | パターン検証方法、そのプログラム、半導体装置の製造方法 |
WO2007048442A1 (en) * | 2005-10-28 | 2007-05-03 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device using optical proximity correction for the optical lithography |
JP2007184378A (ja) * | 2006-01-05 | 2007-07-19 | Canon Inc | 露光装置における露光量および/または焦点合わせのための基板の位置を求める方法および装置 |
US7712068B2 (en) * | 2006-02-17 | 2010-05-04 | Zhuoxiang Ren | Computation of electrical properties of an IC layout |
US20070253637A1 (en) * | 2006-03-08 | 2007-11-01 | Mentor Graphics Corp. | Image intensity calculation using a sectored source map |
US7836423B2 (en) * | 2006-03-08 | 2010-11-16 | Mentor Graphics Corporation | Sum of coherent systems (SOCS) approximation based on object information |
DE102006025351B4 (de) * | 2006-05-31 | 2013-04-04 | Globalfoundries Inc. | Teststruktur zur Überwachung von Leckströmen in einer Metallisierungsschicht und Verfahren |
US8370773B2 (en) * | 2006-08-16 | 2013-02-05 | Freescale Semiconductor, Inc. | Method and apparatus for designing an integrated circuit using inverse lithography technology |
DE102006051489B4 (de) * | 2006-10-31 | 2011-12-22 | Advanced Micro Devices, Inc. | Teststruktur für durch OPC-hervorgerufene Kurzschlüsse zwischen Leitungen in einem Halbleiterbauelement und Messverfahren |
US8056022B2 (en) * | 2006-11-09 | 2011-11-08 | Mentor Graphics Corporation | Analysis optimizer |
JP5032948B2 (ja) | 2006-11-14 | 2012-09-26 | エーエスエムエル マスクツールズ ビー.ブイ. | Dptプロセスで用いられるパターン分解を行うための方法、プログラムおよび装置 |
US7966585B2 (en) * | 2006-12-13 | 2011-06-21 | Mentor Graphics Corporation | Selective shielding for multiple exposure masks |
US7802226B2 (en) * | 2007-01-08 | 2010-09-21 | Mentor Graphics Corporation | Data preparation for multiple mask printing |
US7681172B2 (en) * | 2007-01-29 | 2010-03-16 | Synopsys, Inc. | Method and apparatus for modeling an apodization effect in an optical lithography system |
US7739650B2 (en) * | 2007-02-09 | 2010-06-15 | Juan Andres Torres Robles | Pre-bias optical proximity correction |
US7799487B2 (en) * | 2007-02-09 | 2010-09-21 | Ayman Yehia Hamouda | Dual metric OPC |
US7930653B2 (en) * | 2007-04-17 | 2011-04-19 | Micronic Laser Systems Ab | Triangulating design data and encoding design intent for microlithographic printing |
US8713483B2 (en) | 2007-06-05 | 2014-04-29 | Mentor Graphics Corporation | IC layout parsing for multiple masks |
US7631289B1 (en) * | 2007-06-28 | 2009-12-08 | Cadence Design Systems, Inc. | Method and system for implementing optimized lithography models for accuracy and resolution |
US7805699B2 (en) * | 2007-10-11 | 2010-09-28 | Mentor Graphics Corporation | Shape-based photolithographic model calibration |
US8358828B2 (en) * | 2007-12-28 | 2013-01-22 | Cadence Design Systems, Inc. | Interpolation of irregular data in a finite-dimensional metric space in lithographic simulation |
US8073288B2 (en) * | 2008-01-16 | 2011-12-06 | International Business Machines Corporation | Rendering a mask using coarse mask representation |
US7975244B2 (en) * | 2008-01-24 | 2011-07-05 | International Business Machines Corporation | Methodology and system for determining numerical errors in pixel-based imaging simulation in designing lithographic masks |
NL2003716A (en) * | 2008-11-24 | 2010-05-26 | Brion Tech Inc | Harmonic resist model for use in a lithographic apparatus and a device manufacturing method. |
US8161422B2 (en) * | 2009-01-06 | 2012-04-17 | International Business Machines Corporation | Fast and accurate method to simulate intermediate range flare effects |
US8266554B2 (en) * | 2010-08-05 | 2012-09-11 | International Business Machines Corporation | Dynamic provisional decomposition of lithographic patterns having different interaction ranges |
US8443308B2 (en) * | 2011-05-02 | 2013-05-14 | Synopsys Inc. | EUV lithography flare calculation and compensation |
US8832621B1 (en) | 2011-11-28 | 2014-09-09 | Cadence Design Systems, Inc. | Topology design using squish patterns |
US8875066B2 (en) * | 2013-03-15 | 2014-10-28 | Synopsys, Inc. | Performing image calculation based on spatial coherence |
CN113779928B (zh) * | 2021-09-03 | 2022-07-08 | 珠海市睿晶聚源科技有限公司 | 一种快速仿真光刻工艺的计算方法及系统 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2715895B2 (ja) | 1994-01-31 | 1998-02-18 | 日本電気株式会社 | 光強度分布シミュレーション方法 |
US5647027A (en) | 1994-10-28 | 1997-07-08 | Lucent Technologies Inc. | Method of image enhancement using convolution kernels |
US5680588A (en) | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
KR100257710B1 (ko) * | 1996-12-27 | 2000-06-01 | 김영환 | 리소그라피 공정의 시물레이션 방법 |
US6757645B2 (en) * | 1997-09-17 | 2004-06-29 | Numerical Technologies, Inc. | Visual inspection and verification system |
US6081658A (en) | 1997-12-31 | 2000-06-27 | Avant! Corporation | Proximity correction system for wafer lithography |
JP3080072B2 (ja) | 1998-06-15 | 2000-08-21 | 日本電気株式会社 | 光強度分布解析方法 |
US6223139B1 (en) * | 1998-09-15 | 2001-04-24 | International Business Machines Corporation | Kernel-based fast aerial image computation for a large scale design of integrated circuit patterns |
US6100978A (en) | 1998-10-21 | 2000-08-08 | Naulleau; Patrick P. | Dual-domain point diffraction interferometer |
US6466304B1 (en) | 1998-10-22 | 2002-10-15 | Asm Lithography B.V. | Illumination device for projection system and method for fabricating |
US6263299B1 (en) | 1999-01-19 | 2001-07-17 | Lsi Logic Corporation | Geometric aerial image simulation |
US6127071A (en) | 1999-06-22 | 2000-10-03 | International Business Machines Corporation | Serif mask design for correcting severe corner rounding and line end shortening in lithography |
US6532428B1 (en) * | 1999-10-07 | 2003-03-11 | Advanced Micro Devices, Inc. | Method and apparatus for automatic calibration of critical dimension metrology tool |
US6487696B1 (en) | 2000-03-03 | 2002-11-26 | Voyan Technology | Compensator design optimization through efficient utilization of subcompensators |
US6303253B1 (en) * | 2000-03-16 | 2001-10-16 | International Business Machines Corporation | Hierarchy and domain-balancing method and algorithm for serif mask design in microlithography |
US6460997B1 (en) | 2000-05-08 | 2002-10-08 | Alcon Universal Ltd. | Apparatus and method for objective measurements of optical systems using wavefront analysis |
US6425113B1 (en) | 2000-06-13 | 2002-07-23 | Leigh C. Anderson | Integrated verification and manufacturability tool |
TW552561B (en) | 2000-09-12 | 2003-09-11 | Asml Masktools Bv | Method and apparatus for fast aerial image simulation |
US6453457B1 (en) | 2000-09-29 | 2002-09-17 | Numerical Technologies, Inc. | Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout |
JP2002190443A (ja) * | 2000-12-20 | 2002-07-05 | Hitachi Ltd | 露光方法およびその露光システム |
TWI220999B (en) | 2001-02-13 | 2004-09-11 | Nikon Corp | Measuring method of image formation characteristic, exposure method, exposure apparatus and its adjustment method, manufacture method of device, and recording medium |
US20050015233A1 (en) * | 2003-07-17 | 2005-01-20 | International Business Machines Corporation | Method for computing partially coherent aerial imagery |
-
2003
- 2003-10-27 US US10/694,466 patent/US7010776B2/en not_active Expired - Lifetime
-
2004
- 2004-10-22 CN CNB2004100870858A patent/CN1300639C/zh not_active Expired - Fee Related
- 2004-10-26 JP JP2004310633A patent/JP4395048B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4395048B2 (ja) | 2010-01-06 |
US7010776B2 (en) | 2006-03-07 |
US20050091631A1 (en) | 2005-04-28 |
CN1300639C (zh) | 2007-02-14 |
JP2005128557A (ja) | 2005-05-19 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20171117 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171117 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070214 Termination date: 20201022 |