CN1574202A - 薄膜装置的制造方法、电光学装置和电子设备 - Google Patents
薄膜装置的制造方法、电光学装置和电子设备 Download PDFInfo
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- CN1574202A CN1574202A CNA2004100446837A CN200410044683A CN1574202A CN 1574202 A CN1574202 A CN 1574202A CN A2004100446837 A CNA2004100446837 A CN A2004100446837A CN 200410044683 A CN200410044683 A CN 200410044683A CN 1574202 A CN1574202 A CN 1574202A
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electroluminescent Light Sources (AREA)
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- Thin Film Transistor (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003146165A JP2004349540A (ja) | 2003-05-23 | 2003-05-23 | 薄膜装置の製造方法、電気光学装置、及び電子機器 |
JP2003146165 | 2003-05-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1574202A true CN1574202A (zh) | 2005-02-02 |
CN1306556C CN1306556C (zh) | 2007-03-21 |
Family
ID=33533095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100446837A Expired - Lifetime CN1306556C (zh) | 2003-05-23 | 2004-05-19 | 薄膜装置的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7253087B2 (zh) |
JP (1) | JP2004349540A (zh) |
KR (1) | KR20040100890A (zh) |
CN (1) | CN1306556C (zh) |
TW (1) | TWI234268B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102412199A (zh) * | 2006-01-24 | 2012-04-11 | 精工爱普生株式会社 | 薄膜电路装置和电子设备 |
CN103258913A (zh) * | 2013-05-29 | 2013-08-21 | 苏州强明光电有限公司 | 一种iii-v族化合物电子器件的制备方法 |
CN103258863A (zh) * | 2013-05-29 | 2013-08-21 | 苏州强明光电有限公司 | 一种提高iii-v族化合物电子器件散热性的方法 |
CN101271869B (zh) * | 2007-03-22 | 2015-11-25 | 株式会社半导体能源研究所 | 发光器件的制造方法 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005019054A (ja) * | 2003-06-24 | 2005-01-20 | Sony Corp | 薄膜デバイス、薄膜デバイスの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 |
JP2006319128A (ja) * | 2005-05-12 | 2006-11-24 | Seiko Epson Corp | 積層体の製造方法、電子機器 |
JP4846265B2 (ja) * | 2005-05-13 | 2011-12-28 | 共同印刷株式会社 | 表示装置用素子基板及びその製造方法 |
JP4892894B2 (ja) * | 2005-08-31 | 2012-03-07 | 株式会社島津製作所 | 光または放射線検出ユニットの製造方法、およびその製造方法で製造された光または放射線検出ユニット |
US7655289B2 (en) * | 2005-12-12 | 2010-02-02 | Eastman Kodak Company | Optical film composite having spatially controlled adhesive strength |
FR2900484B3 (fr) * | 2006-04-28 | 2008-08-08 | Ask Sa | Support de dispositif d'identification radiofrequence et son procede de fabrication |
FR2900485B3 (fr) * | 2006-04-28 | 2008-08-08 | Ask Sa | Support de dispositif d'identification radiofrequence et son procede de fabrication |
KR100759691B1 (ko) * | 2006-07-04 | 2007-09-17 | 삼성에스디아이 주식회사 | 평판 표시 장치의 제조 방법 |
KR101176545B1 (ko) * | 2006-07-26 | 2012-08-28 | 삼성전자주식회사 | 마이크로 렌즈의 형성방법과 마이크로 렌즈를 포함한이미지 센서 및 그의 제조방법 |
KR20080013068A (ko) * | 2006-08-07 | 2008-02-13 | 학교법인 포항공과대학교 | 레이저를 이용한 플렉서블 소자의 제조방법 및 플렉서블소자 |
KR100890250B1 (ko) * | 2007-01-08 | 2009-03-24 | 포항공과대학교 산학협력단 | 플렉서블 소자의 제조 방법 및 플렉서블 표시 장치의 제조방법 |
JP5090789B2 (ja) | 2007-05-30 | 2012-12-05 | 東京応化工業株式会社 | 貼り合わせ装置、接着剤の溶解を防ぐ方法、及び貼り合わせ方法 |
US20090155963A1 (en) * | 2007-12-12 | 2009-06-18 | Hawkins Gilbert A | Forming thin film transistors using ablative films |
KR101925772B1 (ko) | 2008-07-10 | 2018-12-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
TWI423718B (zh) * | 2009-10-21 | 2014-01-11 | Au Optronics Corp | 有機電致發光裝置及具有此有機電致發光裝置的電子裝置 |
KR101852190B1 (ko) * | 2011-06-28 | 2018-04-25 | 엘지디스플레이 주식회사 | 플렉서블 표시장치의 제조방법 |
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- 2003-05-23 JP JP2003146165A patent/JP2004349540A/ja not_active Withdrawn
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2004
- 2004-04-29 TW TW093112039A patent/TWI234268B/zh not_active IP Right Cessation
- 2004-04-29 KR KR1020040030075A patent/KR20040100890A/ko not_active Application Discontinuation
- 2004-05-19 CN CNB2004100446837A patent/CN1306556C/zh not_active Expired - Lifetime
- 2004-05-21 US US10/849,890 patent/US7253087B2/en not_active Expired - Lifetime
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CN102412199A (zh) * | 2006-01-24 | 2012-04-11 | 精工爱普生株式会社 | 薄膜电路装置和电子设备 |
CN102412199B (zh) * | 2006-01-24 | 2014-04-02 | 精工爱普生株式会社 | 薄膜电路装置和电子设备 |
CN101271869B (zh) * | 2007-03-22 | 2015-11-25 | 株式会社半导体能源研究所 | 发光器件的制造方法 |
CN103258913A (zh) * | 2013-05-29 | 2013-08-21 | 苏州强明光电有限公司 | 一种iii-v族化合物电子器件的制备方法 |
CN103258863A (zh) * | 2013-05-29 | 2013-08-21 | 苏州强明光电有限公司 | 一种提高iii-v族化合物电子器件散热性的方法 |
CN103258863B (zh) * | 2013-05-29 | 2016-01-20 | 苏州强明光电有限公司 | 一种提高iii-v族化合物电子器件散热性的方法 |
Also Published As
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KR20040100890A (ko) | 2004-12-02 |
CN1306556C (zh) | 2007-03-21 |
US20040266165A1 (en) | 2004-12-30 |
TWI234268B (en) | 2005-06-11 |
TW200427054A (en) | 2004-12-01 |
US7253087B2 (en) | 2007-08-07 |
JP2004349540A (ja) | 2004-12-09 |
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