CN1509061A - 照相机模块 - Google Patents

照相机模块 Download PDF

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CN1509061A
CN1509061A CNA2003101206709A CN200310120670A CN1509061A CN 1509061 A CN1509061 A CN 1509061A CN A2003101206709 A CNA2003101206709 A CN A2003101206709A CN 200310120670 A CN200310120670 A CN 200310120670A CN 1509061 A CN1509061 A CN 1509061A
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camera module
image sensor
sensor chip
filter
filter part
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池田修
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L27/14601—Structural or functional details thereof
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
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    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/4809—Loop shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball

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Abstract

一种照相机模块，使用于手机的照相机模块芯片尺寸小型化的同时降低制造成本。在图像传感器芯片(60)的表面上形成光电转换元件CCD，进而用粘接材料粘贴IR滤光器(90)，使其覆盖CCD。该IR滤光器(90)在芯片支承功能上还附带了滤光功能，可以通过在玻璃材料上进行真空蒸镀或混入铜粒子得到，该滤光器可以实现滤光和芯片支承两种功能。

Description

照相机模块
技术领域
本发明涉及照相机模块，特别涉及适于装在手机等携带设备中的小型的照相机模块。
背景技术
近年来，具有摄影功能的手机正在普及，在这种手机中装有小型的照相机模块。图3是表示该照相机模块结构的剖面图。
在图3中，50是镜筒，51是装在镜筒50上的镜头，52是设在镜筒50的镜筒口上的红外线截止用的IR滤光器。60是收容在镜筒50内的空间中，并与印刷基板70电连接的图像传感器芯片。
图像传感器芯片60将来自通过IR滤光器52及镜头51入射的被摄体的光转换成电信号。在该图像传感器芯片60中，在硅片61的表面上形成CCD，并且在其上粘合支承玻璃基板62用于支承薄的硅片61。
另外，在图像传感器芯片60的表面周边形成电极焊垫63A、63B。从硅片61的侧面到里面形成浮动线64A、64B。该浮动线64A、64B向粘贴在硅片61里面的玻璃基板65延伸，在向该玻璃基板65延伸的浮动线64A、64B的端部形成冲击电极66A、66B。而该冲击电极66A、66B连接在印刷基板70上。
在印刷基板70的里面接收来自图像传感器芯片60的电信号，对该信号实施规定的图像信号处理的DSP80通过冲击电极81A、81B被连接。
关于该种照相机模块记载在专利文件1-3中。另外，关于在里面设置冲击电极的芯片结构记载在专利文件4中。
[专利文献1]特开平9-61239号公报
[专利文献2]特开平11-261044号公报
[专利文献3]特愿2001-128072号公报
[专利文献4]专利公开2002-512436号公报
发明内容
可是，上述照相机模块镜筒50，镜头51，IR滤光器52及图像传感器芯片60分别是单立的部件，组合相关的个别备件，构成照相机模块。因此存在很难进一步小型化，制造成本也高的问题。
因此，本发明的照相机模块通过在图像传感器的表面上形成用于截止规定波长区域的入射光的滤光部件，试图与图像传感器芯片成为一体。因此，滤光部件在图像传感器芯片的制造过程中形成一体，能够小型化并降低制造成本。
附图说明
图1是涉及本发明实施方式的照相机模块的剖面图；
图2是涉及本发明实施方式的照相机模块的剖面图；
图3是涉及现有例的照相机模块的剖面图。
具体实施方式
下面，参照附图对本发明的实施方式进行详细说明。图1是表示该照相机模块结构的剖面图。图1中对与图3相同的结构部分赋予相同的符号，并省略说明。
在图像传感器芯片60的表面形成光电转换元件CCD，并且为了把该光电转换元件覆盖而利用粘接材料粘贴IR滤光器90。该IR滤光器90按图3来说，是相当于用于支承薄硅片61的支承玻璃基板62的部件，但在芯片支承功能上还加上具备滤光功能。换言之IR滤光器90兼任支承玻璃基板62。通过在玻璃材料上进行金属真空蒸镀或混入铜粒子，可以得到该IR滤光器90。或者IR滤光器90也可以使用进行表面加工的塑料材料，表面加工是使塑料材料具有附带滤光器功能的格栅结构。因此，可以实现滤光和芯片支承两种功能。
在此，在玻璃材料上真空蒸镀金属，形成IR滤光器90时，既可以在将玻璃材料粘贴在图像传感器60芯片的表面之前进行真空蒸镀，也可以在将玻璃材料粘贴在图像传感器60芯片的表面之后进行真空蒸镀。
另外，IR滤光器90虽然是红外线截止滤光器，但不限于此。在图像传感器芯片60是红外线图像传感器芯片时，也可以是红外线通过滤光器(截止红外线以外的波长区域)。
而且，在不需要支承基板功能的场合，通过在半导体晶片加工工序中在晶片上形成IR滤光器90，能减少制造成本。例如，在形成CCD的晶片上，用CVD法形成硅氧化膜(一种玻璃)，或涂敷形成SOG膜(也是一种玻璃)，进而用化学机械的研磨法(CMP)等使该硅氧化膜或SOG膜变得平坦后，只要真空蒸镀金属，就可以形成各种滤光器(如包括IR滤光器90)。
另外，图1的照相机模块的图像传感器芯片60虽然是使用里面冲击电极66A、66B的类型，但也可以是图2那样的图像传感器芯片100。即该图像传感器芯片100包括硅片101，其在表面形成CCD；IR滤光器102，其形成为覆盖上述硅片101的表面；电极焊垫103A、103B，其在IR滤光器表面的周边部形成。电极焊垫103A、103B与印刷基板由连接线104A、104B连接。IR滤光器102是在形成电极焊垫103A、103B后利用上述晶片加工工序形成的，是在电极焊垫103A、103B上除去IR滤光器102的结构。
根据本发明，通过形成覆盖图像传感器芯片表面的滤光器部件，可以得到照相机模块小型化和降低制造成本的效果。

Claims (7)

1.一种照相机模块，其特征在于，包括：图像传感器芯片，其在表面配置光电转换元件，并且具有被形成为覆盖所述表面并且用于截止规定波长区域的入射光的滤光部件；镜头，其配置在所述图像传感器芯片上。
2.如权利要求1所述的照相机模块，其特征在于，所述滤光部件兼任所述图像传感器的支承基板。
3.如权利要求1所述的照相机模块，其特征在于，所述滤光部件由在表面上蒸镀金属的玻璃材料构成。
4.如权利要求1所述的照相机模块，其特征在于，所述滤光部件由进行了表面加工的塑料材料构成，所述表面加工是使所述塑料材料具有附带滤光功能的格栅结构。
5.如权利要求1所述的照相机模块，其特征在于，所述滤光部件由掺加铜粒子的玻璃材料或塑料材料构成。
6.如权利要求1、2、3、4中任一项所述的照相机模块，其特征在于，所述图像传感器芯片具有设在其表面的另外区域的电极焊垫。
7.如权利要求6所述的照相机模块，其特征在于，所述图像传感器芯片在其里面具有与所述电极焊垫连接的外部连接用端子。
CNA2003101206709A 2002-12-18 2003-12-18 照相机模块 Pending CN1509061A (zh)

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JP2002366275A JP2004200966A (ja) 2002-12-18 2002-12-18 カメラモジュール
JP366275/2002 2002-12-18

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US (1) US20040165098A1 (zh)
EP (1) EP1432239A1 (zh)
JP (1) JP2004200966A (zh)
KR (1) KR100543854B1 (zh)
CN (1) CN1509061A (zh)
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KR100410946B1 (ko) * 2001-05-16 2003-12-18 삼성전기주식회사 이미지 센서 모듈 및 그 제조 방법
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7831139B2 (en) 2008-01-28 2010-11-09 Hon Hai Precision Industry Co., Ltd. Camera module with lens carrying structure using electrostatic driving unit
CN101498823B (zh) * 2008-01-28 2011-03-30 鸿富锦精密工业（深圳）有限公司 相机模组
CN109216384A (zh) * 2017-07-07 2019-01-15 日月光半导体制造股份有限公司 半导体封装装置及制造所述半导体封装装置的方法
CN109216384B (zh) * 2017-07-07 2020-10-20 日月光半导体制造股份有限公司 半导体封装装置及制造所述半导体封装装置的方法

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