CN1487501A - 磁场检测传感器 - Google Patents

磁场检测传感器 Download PDF

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Publication number
CN1487501A
CN1487501A CNA031201466A CN03120146A CN1487501A CN 1487501 A CN1487501 A CN 1487501A CN A031201466 A CNA031201466 A CN A031201466A CN 03120146 A CN03120146 A CN 03120146A CN 1487501 A CN1487501 A CN 1487501A
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CN
China
Prior art keywords
magnetic
sensor
ferromagnetic layer
magnetic field
orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA031201466A
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English (en)
Chinese (zh)
Inventor
M������ɳ
M·沙马
F·佩尔纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1487501A publication Critical patent/CN1487501A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
CNA031201466A 2002-05-14 2003-03-10 磁场检测传感器 Pending CN1487501A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/146176 2002-05-14
US10/146,176 US20030214762A1 (en) 2002-05-14 2002-05-14 Magnetic field detection sensor

Publications (1)

Publication Number Publication Date
CN1487501A true CN1487501A (zh) 2004-04-07

Family

ID=29269749

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA031201466A Pending CN1487501A (zh) 2002-05-14 2003-03-10 磁场检测传感器

Country Status (6)

Country Link
US (1) US20030214762A1 (https=)
EP (1) EP1363134A3 (https=)
JP (1) JP2004029007A (https=)
KR (1) KR20030088355A (https=)
CN (1) CN1487501A (https=)
TW (1) TW200306431A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104508501A (zh) * 2012-05-11 2015-04-08 公立大学法人大阪市立大学 功率因数计测装置
CN105242223A (zh) * 2014-07-01 2016-01-13 恩智浦有限公司 具有偏移抵消并且使用绝缘体上技术实现的的差分横向磁场传感器系统
CN105319518A (zh) * 2014-08-01 2016-02-10 迈克纳斯公司 磁场测量装置
CN106249180A (zh) * 2015-06-09 2016-12-21 迈克纳斯公司 磁场测量设备
CN106489063A (zh) * 2014-07-11 2017-03-08 克罗科斯科技公司 使用磁隧道结的基于mlu的加速计
CN112858965A (zh) * 2015-04-29 2021-05-28 艾沃思宾技术公司 具有增加的snr的磁场传感器

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198583A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド
JP4298691B2 (ja) 2005-09-30 2009-07-22 Tdk株式会社 電流センサおよびその製造方法
DE102005060713B4 (de) 2005-12-19 2019-01-24 Austriamicrosystems Ag Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes
JP4361077B2 (ja) 2006-10-31 2009-11-11 Tdk株式会社 磁気センサおよびその製造方法
WO2008059833A1 (en) * 2006-11-15 2008-05-22 Alps Electric Co., Ltd. Magnetic detector and electronic device
JP5006339B2 (ja) * 2006-12-20 2012-08-22 アルプス電気株式会社 磁気検出装置
US7715156B2 (en) * 2007-01-12 2010-05-11 Tdk Corporation Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element
WO2008099662A1 (ja) * 2007-01-31 2008-08-21 Alps Electric Co., Ltd. 磁気検出装置
JP5015966B2 (ja) * 2007-02-02 2012-09-05 アルプス電気株式会社 磁気検出装置及びその製造方法
JP2010156543A (ja) * 2007-04-18 2010-07-15 Alps Electric Co Ltd 磁気検出装置
US20090059444A1 (en) * 2007-08-30 2009-03-05 Freescale Semiconductor, Inc. Methods and structures for an integrated two-axis magnetic field sensor
JP4780117B2 (ja) * 2008-01-30 2011-09-28 日立金属株式会社 角度センサ、その製造方法及びそれを用いた角度検知装置
US8829901B2 (en) * 2011-11-04 2014-09-09 Honeywell International Inc. Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields
US8786987B2 (en) * 2012-04-27 2014-07-22 Seagate Technology Llc Biased two dimensional magnetic sensor
US8991250B2 (en) * 2012-09-11 2015-03-31 The United States Of America As Represented By Secretary Of The Navy Tuning fork gyroscope time domain inertial sensor
US8953284B1 (en) * 2013-11-20 2015-02-10 HGST Netherlands B.V. Multi-read sensor having a narrow read gap structure
US10128311B2 (en) * 2017-03-17 2018-11-13 Toshiba Memory Corporation Magnetic memory device
US11574758B2 (en) * 2021-05-07 2023-02-07 Globalfoundries Singapore Pte. Ltd. Magnetic field sensor using different magnetic tunneling junction (MTJ) structures
KR102655502B1 (ko) 2021-09-28 2024-04-09 서울대학교산학협력단 상보형 센서 일체형 인터페이스 회로 및 상보형 센서 일체형 차동 인터페이스 회로

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
US5737157A (en) * 1996-10-09 1998-04-07 International Business Machines Corporation Disk drive with a thermal asperity reduction circuitry using a magnetoresistive sensor
US5748399A (en) * 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
JP2002522866A (ja) * 1998-08-14 2002-07-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ スピントンネル接合素子を具える磁界センサ
US6259586B1 (en) * 1999-09-02 2001-07-10 International Business Machines Corporation Magnetic tunnel junction sensor with AP-coupled free layer
US6469926B1 (en) * 2000-03-22 2002-10-22 Motorola, Inc. Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
US20010036103A1 (en) * 2000-04-28 2001-11-01 Brug James A. Solid-state memory with magnetic storage cells

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104508501A (zh) * 2012-05-11 2015-04-08 公立大学法人大阪市立大学 功率因数计测装置
US10120001B2 (en) 2012-05-11 2018-11-06 Osaka City University Power factor measurement device
CN105242223A (zh) * 2014-07-01 2016-01-13 恩智浦有限公司 具有偏移抵消并且使用绝缘体上技术实现的的差分横向磁场传感器系统
CN105242223B (zh) * 2014-07-01 2018-06-12 恩智浦有限公司 具有偏移抵消并且使用绝缘体上技术实现的的差分横向磁场传感器系统
CN106489063A (zh) * 2014-07-11 2017-03-08 克罗科斯科技公司 使用磁隧道结的基于mlu的加速计
CN105319518A (zh) * 2014-08-01 2016-02-10 迈克纳斯公司 磁场测量装置
CN105319518B (zh) * 2014-08-01 2018-07-31 Tdk-迈克纳斯有限责任公司 磁场测量装置
CN112858965A (zh) * 2015-04-29 2021-05-28 艾沃思宾技术公司 具有增加的snr的磁场传感器
US12181539B2 (en) 2015-04-29 2024-12-31 Everspin Technologies, Inc. Magnetic field sensor with increased SNR
CN106249180A (zh) * 2015-06-09 2016-12-21 迈克纳斯公司 磁场测量设备
CN106249180B (zh) * 2015-06-09 2019-11-01 Tdk-迈克纳斯有限责任公司 磁场测量设备

Also Published As

Publication number Publication date
US20030214762A1 (en) 2003-11-20
EP1363134A2 (en) 2003-11-19
TW200306431A (en) 2003-11-16
EP1363134A3 (en) 2005-04-27
JP2004029007A (ja) 2004-01-29
KR20030088355A (ko) 2003-11-19

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