CN1487501A - 磁场检测传感器 - Google Patents
磁场检测传感器 Download PDFInfo
- Publication number
- CN1487501A CN1487501A CNA031201466A CN03120146A CN1487501A CN 1487501 A CN1487501 A CN 1487501A CN A031201466 A CNA031201466 A CN A031201466A CN 03120146 A CN03120146 A CN 03120146A CN 1487501 A CN1487501 A CN 1487501A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- sensor
- ferromagnetic layer
- magnetic field
- orientation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 246
- 238000001514 detection method Methods 0.000 title claims abstract description 86
- 230000005294 ferromagnetic effect Effects 0.000 claims description 100
- 230000005415 magnetization Effects 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000005303 antiferromagnetism Effects 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 149
- 238000004873 anchoring Methods 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 13
- 230000000452 restraining effect Effects 0.000 description 13
- 230000006870 function Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009813 interlayer exchange coupling reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/146176 | 2002-05-14 | ||
| US10/146,176 US20030214762A1 (en) | 2002-05-14 | 2002-05-14 | Magnetic field detection sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1487501A true CN1487501A (zh) | 2004-04-07 |
Family
ID=29269749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA031201466A Pending CN1487501A (zh) | 2002-05-14 | 2003-03-10 | 磁场检测传感器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20030214762A1 (https=) |
| EP (1) | EP1363134A3 (https=) |
| JP (1) | JP2004029007A (https=) |
| KR (1) | KR20030088355A (https=) |
| CN (1) | CN1487501A (https=) |
| TW (1) | TW200306431A (https=) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104508501A (zh) * | 2012-05-11 | 2015-04-08 | 公立大学法人大阪市立大学 | 功率因数计测装置 |
| CN105242223A (zh) * | 2014-07-01 | 2016-01-13 | 恩智浦有限公司 | 具有偏移抵消并且使用绝缘体上技术实现的的差分横向磁场传感器系统 |
| CN105319518A (zh) * | 2014-08-01 | 2016-02-10 | 迈克纳斯公司 | 磁场测量装置 |
| CN106249180A (zh) * | 2015-06-09 | 2016-12-21 | 迈克纳斯公司 | 磁场测量设备 |
| CN106489063A (zh) * | 2014-07-11 | 2017-03-08 | 克罗科斯科技公司 | 使用磁隧道结的基于mlu的加速计 |
| CN112858965A (zh) * | 2015-04-29 | 2021-05-28 | 艾沃思宾技术公司 | 具有增加的snr的磁场传感器 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002198583A (ja) * | 2000-12-26 | 2002-07-12 | Hitachi Ltd | 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド |
| JP4298691B2 (ja) | 2005-09-30 | 2009-07-22 | Tdk株式会社 | 電流センサおよびその製造方法 |
| DE102005060713B4 (de) | 2005-12-19 | 2019-01-24 | Austriamicrosystems Ag | Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes |
| JP4361077B2 (ja) | 2006-10-31 | 2009-11-11 | Tdk株式会社 | 磁気センサおよびその製造方法 |
| WO2008059833A1 (en) * | 2006-11-15 | 2008-05-22 | Alps Electric Co., Ltd. | Magnetic detector and electronic device |
| JP5006339B2 (ja) * | 2006-12-20 | 2012-08-22 | アルプス電気株式会社 | 磁気検出装置 |
| US7715156B2 (en) * | 2007-01-12 | 2010-05-11 | Tdk Corporation | Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element |
| WO2008099662A1 (ja) * | 2007-01-31 | 2008-08-21 | Alps Electric Co., Ltd. | 磁気検出装置 |
| JP5015966B2 (ja) * | 2007-02-02 | 2012-09-05 | アルプス電気株式会社 | 磁気検出装置及びその製造方法 |
| JP2010156543A (ja) * | 2007-04-18 | 2010-07-15 | Alps Electric Co Ltd | 磁気検出装置 |
| US20090059444A1 (en) * | 2007-08-30 | 2009-03-05 | Freescale Semiconductor, Inc. | Methods and structures for an integrated two-axis magnetic field sensor |
| JP4780117B2 (ja) * | 2008-01-30 | 2011-09-28 | 日立金属株式会社 | 角度センサ、その製造方法及びそれを用いた角度検知装置 |
| US8829901B2 (en) * | 2011-11-04 | 2014-09-09 | Honeywell International Inc. | Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields |
| US8786987B2 (en) * | 2012-04-27 | 2014-07-22 | Seagate Technology Llc | Biased two dimensional magnetic sensor |
| US8991250B2 (en) * | 2012-09-11 | 2015-03-31 | The United States Of America As Represented By Secretary Of The Navy | Tuning fork gyroscope time domain inertial sensor |
| US8953284B1 (en) * | 2013-11-20 | 2015-02-10 | HGST Netherlands B.V. | Multi-read sensor having a narrow read gap structure |
| US10128311B2 (en) * | 2017-03-17 | 2018-11-13 | Toshiba Memory Corporation | Magnetic memory device |
| US11574758B2 (en) * | 2021-05-07 | 2023-02-07 | Globalfoundries Singapore Pte. Ltd. | Magnetic field sensor using different magnetic tunneling junction (MTJ) structures |
| KR102655502B1 (ko) | 2021-09-28 | 2024-04-09 | 서울대학교산학협력단 | 상보형 센서 일체형 인터페이스 회로 및 상보형 센서 일체형 차동 인터페이스 회로 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5751521A (en) * | 1996-09-23 | 1998-05-12 | International Business Machines Corporation | Differential spin valve sensor structure |
| US5737157A (en) * | 1996-10-09 | 1998-04-07 | International Business Machines Corporation | Disk drive with a thermal asperity reduction circuitry using a magnetoresistive sensor |
| US5748399A (en) * | 1997-05-13 | 1998-05-05 | International Business Machines Corporation | Resettable symmetric spin valve |
| JP2002522866A (ja) * | 1998-08-14 | 2002-07-23 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | スピントンネル接合素子を具える磁界センサ |
| US6259586B1 (en) * | 1999-09-02 | 2001-07-10 | International Business Machines Corporation | Magnetic tunnel junction sensor with AP-coupled free layer |
| US6469926B1 (en) * | 2000-03-22 | 2002-10-22 | Motorola, Inc. | Magnetic element with an improved magnetoresistance ratio and fabricating method thereof |
| US20010036103A1 (en) * | 2000-04-28 | 2001-11-01 | Brug James A. | Solid-state memory with magnetic storage cells |
-
2002
- 2002-05-14 US US10/146,176 patent/US20030214762A1/en not_active Abandoned
- 2002-12-13 TW TW091136153A patent/TW200306431A/zh unknown
-
2003
- 2003-03-10 CN CNA031201466A patent/CN1487501A/zh active Pending
- 2003-05-07 JP JP2003129163A patent/JP2004029007A/ja active Pending
- 2003-05-09 EP EP03252908A patent/EP1363134A3/en not_active Withdrawn
- 2003-05-13 KR KR10-2003-0030080A patent/KR20030088355A/ko not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104508501A (zh) * | 2012-05-11 | 2015-04-08 | 公立大学法人大阪市立大学 | 功率因数计测装置 |
| US10120001B2 (en) | 2012-05-11 | 2018-11-06 | Osaka City University | Power factor measurement device |
| CN105242223A (zh) * | 2014-07-01 | 2016-01-13 | 恩智浦有限公司 | 具有偏移抵消并且使用绝缘体上技术实现的的差分横向磁场传感器系统 |
| CN105242223B (zh) * | 2014-07-01 | 2018-06-12 | 恩智浦有限公司 | 具有偏移抵消并且使用绝缘体上技术实现的的差分横向磁场传感器系统 |
| CN106489063A (zh) * | 2014-07-11 | 2017-03-08 | 克罗科斯科技公司 | 使用磁隧道结的基于mlu的加速计 |
| CN105319518A (zh) * | 2014-08-01 | 2016-02-10 | 迈克纳斯公司 | 磁场测量装置 |
| CN105319518B (zh) * | 2014-08-01 | 2018-07-31 | Tdk-迈克纳斯有限责任公司 | 磁场测量装置 |
| CN112858965A (zh) * | 2015-04-29 | 2021-05-28 | 艾沃思宾技术公司 | 具有增加的snr的磁场传感器 |
| US12181539B2 (en) | 2015-04-29 | 2024-12-31 | Everspin Technologies, Inc. | Magnetic field sensor with increased SNR |
| CN106249180A (zh) * | 2015-06-09 | 2016-12-21 | 迈克纳斯公司 | 磁场测量设备 |
| CN106249180B (zh) * | 2015-06-09 | 2019-11-01 | Tdk-迈克纳斯有限责任公司 | 磁场测量设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030214762A1 (en) | 2003-11-20 |
| EP1363134A2 (en) | 2003-11-19 |
| TW200306431A (en) | 2003-11-16 |
| EP1363134A3 (en) | 2005-04-27 |
| JP2004029007A (ja) | 2004-01-29 |
| KR20030088355A (ko) | 2003-11-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |