TW200306431A - A magnetic field detection sensor - Google Patents
A magnetic field detection sensor Download PDFInfo
- Publication number
- TW200306431A TW200306431A TW091136153A TW91136153A TW200306431A TW 200306431 A TW200306431 A TW 200306431A TW 091136153 A TW091136153 A TW 091136153A TW 91136153 A TW91136153 A TW 91136153A TW 200306431 A TW200306431 A TW 200306431A
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic
- layer
- sensor
- magnetic field
- ferromagnetic
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 245
- 238000001514 detection method Methods 0.000 title claims abstract description 27
- 230000005294 ferromagnetic effect Effects 0.000 claims description 96
- 230000005415 magnetization Effects 0.000 claims description 43
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 239000000696 magnetic material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 187
- 230000004888 barrier function Effects 0.000 description 15
- 230000005641 tunneling Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000013598 vector Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000009813 interlayer exchange coupling reaction Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/146,176 US20030214762A1 (en) | 2002-05-14 | 2002-05-14 | Magnetic field detection sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200306431A true TW200306431A (en) | 2003-11-16 |
Family
ID=29269749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091136153A TW200306431A (en) | 2002-05-14 | 2002-12-13 | A magnetic field detection sensor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20030214762A1 (https=) |
| EP (1) | EP1363134A3 (https=) |
| JP (1) | JP2004029007A (https=) |
| KR (1) | KR20030088355A (https=) |
| CN (1) | CN1487501A (https=) |
| TW (1) | TW200306431A (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002198583A (ja) * | 2000-12-26 | 2002-07-12 | Hitachi Ltd | 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド |
| JP4298691B2 (ja) | 2005-09-30 | 2009-07-22 | Ｔｄｋ株式会社 | 電流センサおよびその製造方法 |
| DE102005060713B4 (de) | 2005-12-19 | 2019-01-24 | Austriamicrosystems Ag | Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes |
| JP4361077B2 (ja) | 2006-10-31 | 2009-11-11 | Ｔｄｋ株式会社 | 磁気センサおよびその製造方法 |
| WO2008059833A1 (en) * | 2006-11-15 | 2008-05-22 | Alps Electric Co., Ltd. | Magnetic detector and electronic device |
| JP5006339B2 (ja) * | 2006-12-20 | 2012-08-22 | アルプス電気株式会社 | 磁気検出装置 |
| US7715156B2 (en) * | 2007-01-12 | 2010-05-11 | Tdk Corporation | Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element |
| WO2008099662A1 (ja) * | 2007-01-31 | 2008-08-21 | Alps Electric Co., Ltd. | 磁気検出装置 |
| JP5015966B2 (ja) * | 2007-02-02 | 2012-09-05 | アルプス電気株式会社 | 磁気検出装置及びその製造方法 |
| JP2010156543A (ja) * | 2007-04-18 | 2010-07-15 | Alps Electric Co Ltd | 磁気検出装置 |
| US20090059444A1 (en) * | 2007-08-30 | 2009-03-05 | Freescale Semiconductor, Inc. | Methods and structures for an integrated two-axis magnetic field sensor |
| JP4780117B2 (ja) * | 2008-01-30 | 2011-09-28 | 日立金属株式会社 | 角度センサ、その製造方法及びそれを用いた角度検知装置 |
| US8829901B2 (en) * | 2011-11-04 | 2014-09-09 | Honeywell International Inc. | Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields |
| US8786987B2 (en) * | 2012-04-27 | 2014-07-22 | Seagate Technology Llc | Biased two dimensional magnetic sensor |
| JP6083690B2 (ja) | 2012-05-11 | 2017-02-22 | 公立大学法人大阪市立大学 | 力率計測装置 |
| US8991250B2 (en) * | 2012-09-11 | 2015-03-31 | The United States Of America As Represented By Secretary Of The Navy | Tuning fork gyroscope time domain inertial sensor |
| US8953284B1 (en) * | 2013-11-20 | 2015-02-10 | HGST Netherlands B.V. | Multi-read sensor having a narrow read gap structure |
| EP2963435B1 (en) * | 2014-07-01 | 2017-01-25 | Nxp B.V. | Differential lateral magnetic field sensor system with offset cancelling and implemented using silicon-on-insulator technology |
| EP2966453B1 (en) * | 2014-07-11 | 2018-10-31 | Crocus Technology | MLU based accelerometer using a magnetic tunnel junction |
| DE102014011245B3 (de) * | 2014-08-01 | 2015-06-11 | Micronas Gmbh | Magnetfeldmessvorrichtung |
| US10809320B2 (en) * | 2015-04-29 | 2020-10-20 | Everspin Technologies, Inc. | Magnetic field sensor with increased SNR |
| DE102015007190B4 (de) * | 2015-06-09 | 2017-03-02 | Micronas Gmbh | Magnetfeldmessvorrichtung |
| US10128311B2 (en) * | 2017-03-17 | 2018-11-13 | Toshiba Memory Corporation | Magnetic memory device |
| US11574758B2 (en) * | 2021-05-07 | 2023-02-07 | Globalfoundries Singapore Pte. Ltd. | Magnetic field sensor using different magnetic tunneling junction (MTJ) structures |
| KR102655502B1 (ko) | 2021-09-28 | 2024-04-09 | 서울대학교산학협력단 | 상보형 센서 일체형 인터페이스 회로 및 상보형 센서 일체형 차동 인터페이스 회로 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5751521A (en) * | 1996-09-23 | 1998-05-12 | International Business Machines Corporation | Differential spin valve sensor structure |
| US5737157A (en) * | 1996-10-09 | 1998-04-07 | International Business Machines Corporation | Disk drive with a thermal asperity reduction circuitry using a magnetoresistive sensor |
| US5748399A (en) * | 1997-05-13 | 1998-05-05 | International Business Machines Corporation | Resettable symmetric spin valve |
| JP2002522866A (ja) * | 1998-08-14 | 2002-07-23 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | スピントンネル接合素子を具える磁界センサ |
| US6259586B1 (en) * | 1999-09-02 | 2001-07-10 | International Business Machines Corporation | Magnetic tunnel junction sensor with AP-coupled free layer |
| US6469926B1 (en) * | 2000-03-22 | 2002-10-22 | Motorola, Inc. | Magnetic element with an improved magnetoresistance ratio and fabricating method thereof |
| US20010036103A1 (en) * | 2000-04-28 | 2001-11-01 | Brug James A. | Solid-state memory with magnetic storage cells |
-
2002
- 2002-05-14 US US10/146,176 patent/US20030214762A1/en not_active Abandoned
- 2002-12-13 TW TW091136153A patent/TW200306431A/zh unknown
-
2003
- 2003-03-10 CN CNA031201466A patent/CN1487501A/zh active Pending
- 2003-05-07 JP JP2003129163A patent/JP2004029007A/ja active Pending
- 2003-05-09 EP EP03252908A patent/EP1363134A3/en not_active Withdrawn
- 2003-05-13 KR KR10-2003-0030080A patent/KR20030088355A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20030214762A1 (en) | 2003-11-20 |
| CN1487501A (zh) | 2004-04-07 |
| EP1363134A2 (en) | 2003-11-19 |
| EP1363134A3 (en) | 2005-04-27 |
| JP2004029007A (ja) | 2004-01-29 |
| KR20030088355A (ko) | 2003-11-19 |
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