CN1467803A - 具有多个凸块的基片、凸块形成方法及将基片彼此结合的方法 - Google Patents
具有多个凸块的基片、凸块形成方法及将基片彼此结合的方法 Download PDFInfo
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- CN1467803A CN1467803A CNA03136523XA CN03136523A CN1467803A CN 1467803 A CN1467803 A CN 1467803A CN A03136523X A CNA03136523X A CN A03136523XA CN 03136523 A CN03136523 A CN 03136523A CN 1467803 A CN1467803 A CN 1467803A
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Abstract
在基片上形成多个凸块。首先,将具有底面的孔形成在片材中,并将所述孔填满金属膏。然后,将所述片材这样叠放和定位在所述基片上,即所述片材的所述孔面向所述基片的电极。对所述基片和所述片材一起进行加热和加压,从而所述金属膏被熔化和结合在所述电极上而形成所述凸块。再后,将所述片材从具有凸块的所述基片上分离,从而所述凸块会形成在所述基片上。每个凸块中的一部分均不会缺少,所有凸块都能确实地得以形成。因此,所述凸块能够一致地形成。
Description
技术领域
本发明涉及一种具有多个凸块的基片、用于形成基片中的多个凸块的方法及将具有多个凸块的基片彼此结合的方法。
背景技术
作为在半导体基片的电极上形成凸块的一种方法,电解镀方法是众所周知的。根据相关技术的该电解镀方法将在下面给以描述。
如图7所示,由硅晶片制成的半导体基片11包含多个电极21。光阻掩膜70形成在基片11上,并具有开口,开口用于在电极21的表面上形成凸块60。基片11浸在电镀液4中。
基片11的电极21用作阴极,其浸在电镀液4之中,并且阳极8也浸在电镀液4中。然后,将电源3供给的预定电压加在阳极8和阴极之间,以使溶解在电镀液4中的金属离子沉积在阴极也即电极21的表面上,从而在电极21上形成了凸块60。这样,凸块60通过金属离子的沉积而得以形成。
通常,在光阻掩膜70形成在基片11之前,铜膜沉积在基片11上。也即,铜膜形成在基片11上,光阻掩膜70形成在铜膜上,从而电解镀能够得到稳定,并且金属离子能够正确地沉积。在凸块60形成之后,使用蚀刻方法将不必要的铜膜去除掉。
在上述方法中,例如,光阻掩膜70的开口直径决定凸块60的形状。而且,通过调节光阻掩膜70的预定厚度,能够控制凸块60的高度,并且通过调节开口之间的预定间隔,能够对凸块60之间的间隔进行控制。
最近,根据对形成在半导体芯片上的电子电路的增密的需要,要求对形成在芯片上的电极21和凸块60分别进行最小化和减小它们之间的每个间隔。而且,需要较高的凸块60,目的是降低由于印刷电路板和安装在印刷电路板上的半导体芯片之间热膨胀系数的不同而发生的变形。根据上述方面,电解镀方法具有如下问题。
如果凸块60通过电解镀方法形成,因为电镀液中产生的气态氢能够阻止凸块的沉积,则凸块60的一部分可能会残缺。而且,由于气态氢的作用,一些凸块60可能不能进行沉积和生长。因此,凸块60不能够通过电解镀的方法一致地形成。
此外,如果多个凸块60通过电解镀方法形成,则每个凸块的高度可能不同。随着凸块60的高度的增加,凸块60之间的高度偏差也会增大。这样,由于存在高度偏差,就很难将具有凸块60的半导体芯片固定在印刷电路板。特别是在较高凸块的情况下,芯片不能正确地固定在电路板上。
发明内容
鉴于上述问题,本发明的目的是提供一种具有多个凸块的基片,其一致地形成在基片上。而且,本发明提供一种在基片上形成多个凸块的方法,每个凸块具有均匀的高度。此外,本发明的另一个目的是提供将具有多个凸块的基片彼此结合的方法。
多个凸块通过下面方式形成在基片上。首先,将具有底面的孔成形在片材中的预定位置上,该孔的位置与基片的电极位置对应。孔中填满了金属膏。然后,将片材这样叠放和定位在基片上,即片材的孔面向基片的电极。对基片和片材一起进行加热和加压,从而金属膏会被熔化和结合在电极上而形成凸块。再后,将片材从具有凸块的基片上分离,从而在基片上形成了凸块。每个凸块不会缺损,并且所有凸块都会形成。因此,凸块能够通过上述方法一致地形成。
每个凸块优选呈锥形形状,其横截面从基片的表面到凸块的顶部逐渐变小。此处,锥形的横截面与基片的表面平行。当将基片固定在另一个基片上时,两个基片之间的间距就能够很容易地得到控制。也即,基片从另一个基片的表面上伸出的高度能够很容易地得到控制,从而可以使间距变得几乎相同,并且基片能够很容易地且准确地与另一个基片对正。
接着,采用如下方法将第一基片结合在第二基片上。首先,将凸块形成在第一基片的电极上。将孔形成在第二基片上,其特征在于,孔的位置与第一基片的电极位置对应,并且孔具有底面。然后,将第二基片的孔填满金属膏,并将第一基片这样叠放和定位在第二基片上,即第二基片的孔面向第一基片的凸块。对第二基片和第一基片一起进行加热和加压,从而金属膏会被熔化和结合在电极上。这样,第一基片就被结合在第二基片上。
在上述结合方法中,因为第一基片的凸块能够很容易地插入充满金属膏的孔中,当将第一基片叠放在第二基片上时,第一基片能够很容易且准确地定位在第二基片上。而且,在第一和第二基片之间的结合部分会增大,从而第一基片能够牢固地结合在第二基片上。
附图说明
通过参照附图而在下面所作的详细描述,可以使本发明的上述和其他目的、特征及优点变得更为显而易见。附图包括:
图1A-1D是剖视图,它们用于说明根据本发明第一实施例而在半导体基片上形成多个凸块的过程;
图2是剖视图,其表示的是根据第一实施例的插入在热压机中的半导体基片;
图3A是透视图,其表示的是具有多个凸块的半导体晶片,图3B是透视图,其表示的是半导体芯片,以及图3C是剖视图,其表示的是根据第一实施例的固定在印刷电路板上的半导体芯片;
图4A至4D是剖视图,它们用于说明根据本发明第二实施例而在印刷电路板上形成多个凸块的过程;
图5A至5D是剖视图,它们用于说明根据本发明第三实施例而将半导体芯片结合在印刷电路板上的过程;
图6A至6D是剖视图,它们用于说明根据本发明第四实施例而将两个半导体晶片结合起来的过程;
图7是示意性剖视图,其用于说明根据相关技术而在半导体基片上形成多个凸块的过程。
具体实施方式(第一实施例)
首先参照图1A,准备有片材45。片材45由粘结膜40构成,粘结膜包含膜41和金属膜42。膜41结合在金属膜42上。膜41优选由热塑树脂例如液晶聚合物、聚醚醚酮树脂、聚醚酰亚胺树脂及聚醚醚酮树脂和聚醚酰亚胺树脂的混合物制成。这些材料具有适中的挠性及耐热性,因此图1D中所示的凸块61能够很容易地形成。
优选地,膜41的线性膨胀系数与图1D中所示的半导体基片11的线性膨胀系数几乎相等,这是因为膜41安置在基片11上,然后再被加热。因此,当膜41和基片11之间的线性膨胀系数相差较大时,要在膜41中添加填料,从而使线性膨胀系数的差值得到减小。当基片11和片材45一起被加热和加压时,能够防止由于线性膨胀系数的不同而使得基片11出现缝隙或凸块61发生剪切。
在第一实施例中,膜41由液晶聚合物制成,其厚度是125μm。
金属膜42优选由金属箔片例如铜箔片、铝箔片或类似物制成。如果使用这些金属,孔就能够很容易地形成。在第一实施例中,金属膜42由铜箔片制成,其厚度是18μm。
如图1A所示,通过使用二氧化碳激光器1而使激光束照射在粘结膜40中的膜41的表面上。激光束在膜41上钻孔,从而形成孔44。
构成膜41的热塑树脂的物理性能与构成金属膜42的金属箔片的物理性能大不相同。因此,激光束照射在膜41上的钻取作用与照射在金属膜42上的钻取作用也就会大不相同。也就是说,膜41的钻取能量比金属膜42的钻取能量小得多。因此,在膜41中很容易地钻出多个孔44,而不会钻取金属膜42。孔44深达膜41和金属膜42之间的分界面,因此孔44的底面为金属膜42。这样,每个孔44具有相同的深度,该深度与膜41的厚度相等。而且,激光束能够将孔44成形为不同的形状,该形状与凸块61的形状对应。
在此,孔44在膜41中被安置在预定位置。该预定位置与图1C中所示的半导体基片11的电极21相对应。
在该激光加工过程中,如图1A所示,孔44能够具有锥形形状。锥形孔44具有底面,该底面的面积比膜41表面上的开口面积小。也即,与膜41的表面平行的孔44的横截面在向着孔44的底面方向上逐渐变小。例如,当膜41的厚度是125μm时,膜41表面上的开口直径在120-140μm的范围内,而底面上的孔的直径是100μm。使用这种具有锥形孔44的片材45,在热压过程中形成凸块61之后,就会很容易将粘结膜40从基片11上分离。
尽管片材45由粘结膜40构成,但由热塑树脂制成的单层膜能够被用作片材45,也即片材仅由热塑树脂膜构成。在这种情况下,激光束功率被降低,因此激光束不会钻透树脂膜。
此外,还有其他方法可用于形成孔44。例如,用蚀刻方法形成孔44。
接着,如图1B所示,使用填充机2将金属膏31填满孔44。具体地讲,如图1B所示,填充机2的刮板9振动地从左向右移动,从而金属膏31被挤压在孔44中。
此处,金属膏31以这种方法制备,即粘结树脂和/或有机溶剂被加入在银颗粒和锡颗粒的混合物中,然后混合在一起以形成焊膏。金颗粒和锡颗粒的混合物或铜颗粒和锡颗粒的混合物也能够用作金属膏31。
然后,如图1C所示,将孔44中填满金属膏31的片材45翻转过来。片材45和半导体基片11被这样叠放在一起,即基片11上的电极21面向填满了金属膏31的孔44。基片11和片材45一起被加热和加压,从而金属膏31被熔化和结合在电极21上。加热和加压操作的执行如下所述。
如图2所示,基片11和片材45通过一对抗粘结膜51、多个缓冲垫52及一对金属板53而插入在一对热压板54之间。每个热压板54具有嵌入在其中的加热器55。抗粘结膜51用于防止基片11和带有片材45结合在基片11周围的其他部件上,并用于保护基片11免遭损坏。抗粘结膜51由聚酰亚胺膜或类似物制成。
缓冲垫52用于均匀地挤压基片11和片材45。缓冲垫52例如使用下述方法由金属纤维制成。金属例如不锈钢被切割成纤维。纤维状不锈钢被成形为板状,从而形成缓冲垫52。在该实施例中,四个缓冲垫52插入在抗粘结膜51和金属板53之间,它们安置在基片11的上侧。每个缓冲垫52的厚度大约1mm。
金属板53用于保护热压板54免遭损坏。金属板53由不锈钢(也即SUS)、钛或类似物制成,其厚度约为2mm。
在没有进行加压时,加热器55在5分钟内将基片11加热到200℃。接着,压力机(未示出)通过一对热压板54向基片11施加1-10MPa的压力。对基片11的加压优选6MPa及更大的压力。然后,基片11在被加压的状态下以200-270℃的温度加热10-30分钟。优选地,基片11以225℃的温度加热15分钟。加热和加压能够在空气中进行。然而,优选加热和加压操作在真空中进行,从而能保护金属膏31和电极21免遭氧化。
在上述过程中,金属膏31被熔化并与电极21相互扩散,从而形成了凸块61。
之后,片材45被从具有凸块61的基片11上拆下。因为片材45是由热塑树脂制成的膜41和非常薄的金属箔片制成的金属膜42构成,尽管片材45存在热滞后,但片材45仍保持着挠性。因此,能够很容易地将片材45拆下。
此时,因为金属膏31与电极21相互扩散,金属膏31被紧紧地结合在基片11的电极21上。另一方面,因为在先前的激光加工过程中,形成在金属膜42和金属膏31之间分界面上的碳保留在界面上而作为防止粘结的抗粘结材料,从而金属膏31不会被粘结在片材45的金属膜42上。片材45也能够很容易地从凸块61上拆下。此外,在通过不同于激光加工的其他方法形成孔44的情况下,在填充金属膏31之前,孔44的内壁涂覆有抗粘结材料,从而片材45在加热和加压之后能够很容易地被拆下。
这样,在电极21上具有凸块61的半导体晶片101就得以完成。
在第一实施例中,因为凸块61的高度与孔44的深度相等,所以每个凸块61的高度几乎相同。而且,因为锥形孔44的形状被翻转传递给凸块61,因此凸块61呈锥形形状。锥形孔44的横截面在向着孔44的底面方向上逐渐变小。因此,与基片11的表面平行的凸块61的横截面在向着凸块61顶部方向上逐渐变小。这样,凸块61就被形成为截头圆锥形状。然而,使用激光加工方法也能够将凸块61形成为其他形状。例如,孔44被形成为预定形状,例如截头棱锥形状,从而孔44的预定形状会被翻转传递给凸块61。这时,凸块61也就形成为预定形状。
凸块61以上述方法形成,该方法与根据现有技术的电解镀方法大不相同。在电解镀方法中,用于形成凸块61的制造时间随着凸块61高度的增加而增加,但在本发明中,即使在凸块61变高的情况下,上述方法的制造时间几乎固定不变。因此,在即使凸块61变高的情况下,制造费用也几乎固定不变。
既然孔44的深度决定凸块61的高度,因此可以通过减小孔44的高度偏差和将金属膏31均匀且充分地填在孔44中而减小基片11上的凸块61的高度偏差。而且,因为凸块61由熔结金属形成,因此凸块61不会发生变形,并且每个凸块61的形状几乎相同。
而且,每个凸块61不会残缺,并且所有凸块61都会成功地形成。因此,与电解镀方法相比,凸块61能够通过上述方法一致地形成。
如图3A和3B所示,在具有凸块61的半导体晶片101完成之后,晶片101被切割成预定块,从而形成了多个半导体芯片12。在此,一片晶片101通常具有多个电子电路图案,每个电子电路图案都相同。例如,图案的数目大约数百或上千个。每个芯片12包含至少一个电子电路图案,并具有多个电极21。通常,电极21的数目大约几十或数千个。因为每个电极21至少有一个凸块61,所以凸块61的数目也与电极21的数目相等或多于电极21的数目。
这样,非常多的芯片12就能够仅由一个晶片101制成。
如图3C所示,芯片12固定在单层印刷电路板13上。芯片12上的凸块61被定位在电路板13上的电极22上,以使它们彼此面对。然后,芯片12被叠放在电路板13上并被加热,从而凸块61会被熔化。在此之后,电路板13和芯片12被冷却,从而熔化后的凸块61就会被凝固并形成为连接部分64。这样,芯片12通过连接部分62结合在电路板13上。
可以如下面所述对第一实施例进行更改和改变。
优选在如图1A中所示的激光加工之前,将保护膜形成在膜41上。保护膜例如由聚对苯二甲酸乙二醇酯制成。在这种情况下,激光束照射在膜41上的保护膜上,因此孔44穿过保护膜而形成。这样,保护膜和膜41都被钻取。在金属膏31填满孔44之后,将保护膜从膜41上拆下。因此,膜41的表面非常洁净。此外,在拆下保护膜之后,金属膏31从膜41的表面上凸出,凸出高度为保护膜的厚度。因为下面原因,金属膏31和电极21在热压过程中很容易而且牢固地结合在一起。
金属膏31包含树脂和有机溶剂。这些成分在热压过程中会被蒸发。因此,在热压过程中,金属膏31的体积减小。为了将金属膏31形成的凸块61牢固地结合在基片11的电极21上,金属膏31需要挤压接触电极21,从而当金属膏在热压过程中熔化时,金属膏和电极21就会相互扩散。在金属膏31从膜41的表面凸出的情况下,凸出的金属膏31可以补偿金属膏31在热压过程体积的减小。这样,金属膏31就会与电极21充分地挤压接触,从而凸块61能够很容易且牢固地结合在电极21上。
此外,孔44形成在膜41中,膜41由热塑树脂制成。在热压过程中,膜41在挤压方向也即图2中所示的垂直方向上发生变形,从而孔44会变小,金属膏31也会与电极21充分地挤压接触。(第二实施例)
如图4A至4D所示,根据本发明第二实施例的形成凸块的方法应用于印刷电路板。首先,将凸块61形成在三层印刷电路板14上,该电路板由热塑树脂制成。在此,另一多层印刷电路板或单层印刷电路板能够用作电路板14。电路板14包含电极23。考虑到电极23在电路板14上的位置,将孔44形成在片材47中的某一位置上。
片材47由粘结膜46构成,粘结膜46包含膜41、金属膜42及分离膜43。分离膜43形成在膜41上,膜41形成在金属膜42上。此处,分离膜43的厚度为50μm。膜41由热塑树脂制成,而分隔膜43由聚酰亚胺树脂制成。膜41优选与构成电路板14的热塑树脂相同的树脂制成,这样片材47的线性膨胀系数与电路板14的线性膨胀系数几乎相同。构成分离膜43的聚酰亚胺树脂对于热塑树脂具有抗粘结性,其被用作电路板14的绝缘材料。因此,在加热和加压之后,片材47能够很容易地从电路板14上拆下。
分离膜43对于电路板14具有抗粘结性,因此在热压过程之后能够很容易地将片材47从电路板14上拆下。而且,在分离膜43的下表面粗加工之后,使用热压的方法将分离膜43叠放在膜41上。分离膜43的下表面粘结在膜41上,并且由于光洁度较低,分离膜43对于由热塑树脂制成的膜41具有抗粘结性。
通过使用激光器可将孔44成形为预定形状。激光束照射在粘结膜46中的分隔膜43的上表面上,从而孔44深达金属膜42的表面。这样,孔44就形成在膜41和分隔膜43之中,并且底面为金属膜42。
接着,如图4B所示,将金属膏31填满孔44。然后,将带有金属膏31的片材47翻转过来,并将其叠放在电路板14上,从而,如图4C所示,充满金属膏31的孔44面向电路板14的电极23。此处,电路板14包含层间结合导体34,其用于以导电方式将电路板14的层与层连接起来。
然后,通过图2所示的热压方法对电路板14和片材47进行加热和加压。金属膏31被熔化并与电路板14的电极23相互扩散,从而形成了凸块61。当电路板14在热压过程中被加热和加压时,电路板14会被软化。然而,由于片材47包含抗粘结膜43,其对于电路板14具有抗粘结性,所以片材47能够很容易地从电路板14上拆下。因此,当带有抗粘结膜43的片材47从具有凸块61的电路板14上拆下时,形成了具有凸块61的三层印刷电路板102。
此外,三层印刷电路板102能被叠放在另一印刷电路板上,从而能够形成多于三层的多层印刷电路板。(第三实施例)
通过参照图5A至5D,对根据本发明第三实施例的将具有凸块的基片彼此结合的结合方法进行描述。
首先,准备好具有凸块61的半导体芯片12和双层印刷电路板15。电路板15具有多个由激光器1形成的孔16,并且电路板15的孔16与芯片12的凸块61对应。孔16的底面为印刷电路板24的内层。通过使用填充机2,孔16被填满金属膏32。
其次,如图5C所示,具有凸块61的芯片12被翻转过来,并被叠放在电路板15上,从而芯片12的凸块61面向充满着金属膏32的孔16。然后,使用热压机(未示出)对电路板15和芯片12进行加热和加压。
这样,金属膏32被熔化并与凸块61相互扩散,从而形成连接部分62,并且芯片12被牢固地连接在电路板15上。金属膏32优选由与凸块61的材料相同的材料构成,这样金属膏32就能够熔化并且很容易地与凸块61相互扩散,从而芯片12能够牢固地结合在电路板15上。
而且,因为芯片12的凸块61能被很容易地插在填有金属膏32的孔16中,所以当芯片被叠放在电路板15上时,其能够很容易地且准确地定位在电路板15上。
此外,电路板15的孔16呈锥形形状,从而芯片12的凸块61也呈锥形形状。因此,当孔16的底面设定得例如比凸块61的上表面小时,在将芯片12连接在电路板15上之后,芯片12和电路板15之间的间距能够很容易地得到控制。也即,芯片从电路板15的表面伸出的高度能够很容易地得到控制。因此,间距会变得几乎一致,并且芯片12能够很容易地且准确地与电路板15对正。
另外,芯片12的凸块61被插在填有金属膏32的孔16中,然后熔化凸块61。因此,在芯片12和电路板15之间的结合部分增大,从而芯片12能够牢固地结合在电路板15上。而且,凸块61和金属膏32相互扩散和结合,从而芯片12和电路板15之间的结合也会变强。
该结合方法能够应用于形成芯片尺寸的封装装置(也即,CSP装置)。此处,电路板15用作CSP装置中的重新印刷电路板。(第四实施例)
根据第四实施例,如图6A至6D所示,均具有凸块的两个半导体基片被结合起来。
首先,准备好具有凸块61的第一晶片101和具有凸块63的第二晶片17。第二晶片17包含多个孔18,它们与第一晶片101的凸块61对应。
如图6A所示,第二晶片17在电极25上具有凸块63。第二晶片17的孔18深达电极25,因此孔18的底面为电极25。孔18的形成如下面所述。与凸块63相反的晶片17的上表面涂覆有光阻掩膜71。然后,光阻掩膜被成形为预定图案,该图案具有多个开口。开口与孔18对应。孔18通过干式蚀刻方法或湿式蚀刻方法形成。在使用湿式蚀刻方法的情况下,除了开口以外的晶片17的所有表面都涂覆有光阻掩膜。除此之外,使用某种蚀刻剂能够将孔18形成为锥形形状。
如图6B所示,孔18被填有金属膏33。如图6C所示,第一晶片101被翻转过来并被叠放在第二晶片17上。然后,对第二晶片17和第一晶片101进行加热和加压,从而金属膏33被熔化并与凸块61相互扩散。这样,第一晶片101被结合在第二晶片17上,从而形成双层半导体晶片103。
之后,将晶片103切割成半导体芯片,每个半导体芯片具有三维电路。
尽管第二晶片17具有凸块63,但凸块63并不是必需的。此处,凸块63用于结合在另一个基片上。此外,凸块63能够在双层半导体晶片103完成之后形成。
尽管第一晶片101被结合在第二晶片17上,但两个印刷电路板能够通过相同的方法结合起来,从而能够形成多层印刷电路板。而且,三个晶片能够被结合起来,从而能够形成多于两层的多层晶片。
尽管这里参照附图结合优选实施例及其改型对本发明进行了充分描述,但应当指出,对于本领域普通技术人员来说,进一步的改变和更改是显而易见的。
Claims (40)
1.一种在基片上形成凸块的方法,包括如下步骤:
在与所述基片的电极位置对应的位置上于片材中形成孔,所述孔具有底面;
用金属膏填充所述孔;
将所述片材叠放和定位在所述基片上,使所述片材的孔面向所述基片的电极;
对所述基片和所述片材一起进行加热和加压,从而所述金属膏被熔化和结合在所述电极上而形成凸块;
将所述片材从具有凸块的所述基片上分离。
2.如权利要求1所述的方法,其特征在于:
所述片材包含由热塑树脂制成的树脂膜和由金属箔片制成的金属膜;
所述孔形成在所述树脂膜中,并且深达所述金属膜的表面,从而所述孔的底面为所述金属膜。
3.如权利要求1所述的方法,其特征在于:
所述片材包含由热塑树脂制成的树脂膜、由金属箔片制成的金属膜及分离膜;
所述分离膜被叠放在所述树脂膜上,所述树脂膜被叠放在所述金属膜上;
所述分离膜对于所述基片具有抗粘结性;
所述孔形成在所述分离膜和所述树脂膜中,并且深达所述金属膜,从而所述孔的底面为所述金属膜。
4.如权利要求2和3中任一所述的方法,其特征在于:
所述树脂膜由液晶聚合物、聚醚醚酮树脂、聚醚酰亚胺树脂或聚醚醚酮树脂和聚醚酰亚胺树脂的混合物制成。
5.如权利要求2和3中任一所述的方法,其特征在于:
所述树脂膜包含填料,以使所述树脂膜的线性膨胀系数与所述基片的线性膨胀系数相等。
6.如权利要求2和3中任一所述的方法,其特征在于:
所述金属膜由铜或铝制成。
7.如权利要求3所述的方法,其特征在于:
所述分离膜由聚酰亚胺树脂制成。
8.如权利要求1-3中任一所述的方法,其特征在于:
在所述于片材中形成孔的步骤中,所述孔由激光加工而形成。
9.如权利要求1-3中任一所述的方法,其特征在于:
所述孔呈锥形形状,其与所述片材的表面平行的横截面从所述片材的表面到所述孔的底面逐渐变小。
10.如权利要求2和3中任一所述的方法,还包括如下步骤:
在用所述金属膏填充所述孔的步骤之前,用抗粘结材料涂覆所述孔的底面,
其中,所述抗粘结材料可以防止所述金属膏在加热步骤中粘结在所述金属膜上,并有助于对所述基片和所述片材一起加压。
11.如权利要求1-3中任一所述的方法,其特征在于:
在用所述金属膏填充所述孔的该步骤中,所述金属膏从所述片材的表面上凸出。
12.如权利要求1-3中任一所述的方法,还包括如下步骤:
在经过将所述片材从具有凸块的所述基片上分离的步骤之后,将基片切成芯片,
其中,所述基片是半导体晶片。
13.如权利要求1-3中任一所述的方法,其特征在于:
所述基片是单层或多层印刷电路板。
14.如权利要求1-3中任一所述的方法,其特征在于:
所述印刷电路板由作为绝缘材料的热塑树脂制成。
15.一种电子装置,包括:
基片;
多个电极,它们形成在所述基片上;
多个凸块,它们形成在所述电极上,
其中,所述凸块由熔结的金属膏制成,每个凸块的高度几乎相同,并且每个凸块呈锥形形状,它们的与所述基片的表面平行的横截面从所述基片的表面到所述凸块的顶部逐渐变小。
16.如权利要求15所述的电子装置,其特征在于:
所述凸块的形状是截头圆锥或截头棱锥,其底面是所述基片的表面。
17.如权利要求15和16中任一所述的电子装置,其特征在于:
所述基片由半导体制成。
18.如权利要求15和16中任一所述的电子装置,其特征在于:
所述基片是单层或多层印刷电路板。
19.一种将第一基片与第二基片结合的方法,包括如下步骤:
在所述第一基片的电极上形成凸块;
在与所述第一基片的所述电极的位置对应的位置上于所述第二基片中形成孔,所述孔具有底面;
用金属膏填充所述第二基片的所述孔;
将所述第一基片叠放和定位在所述第二基片上,使所述第二基片的孔面向所述第一基片的凸块;
对所述第二基片和所述第一基片一起进行加热和加压,从而所述金属膏被熔化和结合在所述电极上。
20.如权利要求19所述的方法,其特征在于:
在将所述第一基片叠放和定位在所述第二基片上的该步骤中,所述凸块的顶端被插入在填满了所述金属膏的所述孔中。
21.如权利要求19和20中任一所述的方法,其特征在于:
所述凸块被成形为锥形形状,所述凸块的横截面从所述第一基片的表面到所述凸块的顶端逐渐变小。
22.如权利要求19和20中任一所述的方法,其特征在于:
在于所述第二基片中形成孔的步骤中,所述孔被成形为锥形形状;
所述孔的与所述第二基片的表面平行的横截面从所述第二基片的表面到所述孔的底面逐渐变小。
23.如权利要求19和20中任一所述的方法,其特征在于:
所述第一基片是半导体基片、单层印刷电路板或多层印刷电路板;
而且,所述第二基片也是半导体基片、单层印刷电路板或多层印刷电路板。
24.如权利要求19和20中任一所述的方法,其特征在于:
所述第一基片的凸块由与填充所述第二基片的孔的金属膏相同的材料制成。
25.如权利要求1-3中任一所述的方法,其特征在于:
所述孔的深度决定所述凸块的高度,因此多个高凸块一致地形成,并且每个凸块的高度几乎相同。
26.如权利要求2和3中任一所述的方法,其特征在于:
所述树脂膜的厚度在10-1000μm的范围之内,而所述金属膜的厚度在1-100μm的范围之内。
27.如权利要求8所述的方法,其特征在于:
所述激光加工由二氧化碳激光器执行。
28.如权利要求1-3中任一所述的方法,其特征在于:
所述金属膏由银、锡、金、铜、银和锡的混合物、金和锡的混合物或铜和锡的混合物制成。
29.如权利要求1所述的方法,其特征在于:
所述片材包含由热塑树脂制成的树脂膜、由金属箔片制成的金属膜及保护膜;
所述保护膜被叠放在所述树脂膜上,所述树脂膜被叠放在所述金属膜上;
所述孔形成在所述保护膜和所述树脂膜中,并且深达所述金属膜,从而所述孔的底面为所述金属膜;
所述方法还包括如下步骤:
在经过使用金属膏填充所述孔的步骤之后,将所述保护膜从带有所述金属膜的所述树脂膜上分离。
30.如权利要求29所述的方法,其特征在于:
在经过将所述保护膜从带有所述金属膜的所述树脂膜上分离的步骤之后,所述金属膏从所述片材的表面上凸出;
并且所述保护模由聚对苯二甲酸乙二醇酯制成。
31.如权利要求1-3中任一所述的方法,其特征在于:
对所述基片和所述片材一起进行加热和加压的步骤包含如下步骤:
在200℃下,将所述基片和所述片材一起加热5分钟;
对所述基片和所述片材一起以1-10MPa的压力加压;
在200-270℃和1-10MPa的压力下,对所述基片和所述片材一起加热10-30分钟。
32.如权利要求2和3中任一所述的方法,其特征在于:
在于所述片材中形成所述孔的该步骤中,使用激光加工的方法形成所述孔;
并且在使用激光加工方法于所述片材中形成所述孔的该步骤中,在所述金属膜上形成有碳层,以使所述碳层充当对所述金属膏具有抗粘结性的抗粘结层。
33.如权利要求1、3和7中任一所述的方法,其特征在于:
在所述分离片材的表面被粗加工之后,将所述分离膜叠放在所述树脂膜上,从而所述分离膜对所述树脂膜具有抗粘结性,所述分离片材的表面叠放在所述树脂膜上。
34.如权利要求1-3中任一所述的方法,其特征在于:
所述基片是半导体晶片或半导体芯片。
35.如权利要求15和16中任一所述的电子装置,其特征在于:
所述基片是半导体晶片或半导体芯片。
36.如权利要求19和20中任一所述的方法,其特征在于:
所述第二基片在芯片尺寸的封装件中被用作重新印刷电路板。
37.如权利要求19和20中任一所述的方法,其特征在于:
第一和第二基片中的每个基片分别是半导体晶片,从而所述第二基片和所述第一基片一起形成三维集成电路晶片。
38.如权利要求37所述的方法,还包括如下步骤:
在经过对所述第二基片和所述第一基片一起加热和加压的步骤之后,将所述三维集成电路晶片切成芯片。
39.如权利要求19和20中任一所述的方法,其特征在于:
所述凸块被成形为锥形形状,与所述第一基片的表面平行的所述凸块的横截面从所述第一基片的表面到所述凸块的顶端逐渐变小;
在于所述第二基片中形成所述孔的该步骤中,所述孔被成形为锥形形状;
所述孔的与所述第二基片的表面平行的横截面从所述第二基片的表面到所述孔的底面逐渐变小。
40.如权利要求19和20中任一所述的方法,其特征在于:
所述第一基片是半导体晶片或半导体芯片;
而且所述第二基片是半导体晶片或半导体芯片。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002161735A JP3835352B2 (ja) | 2002-06-03 | 2002-06-03 | バンプの形成方法及びバンプを有する基板と他の基板との接合方法 |
JP161735/2002 | 2002-06-03 |
Publications (2)
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CN1467803A true CN1467803A (zh) | 2004-01-14 |
CN100388449C CN100388449C (zh) | 2008-05-14 |
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CNB03136523XA Expired - Fee Related CN100388449C (zh) | 2002-06-03 | 2003-05-23 | 在基片上形成凸块的方法 |
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US (1) | US6936532B2 (zh) |
JP (1) | JP3835352B2 (zh) |
CN (1) | CN100388449C (zh) |
TW (1) | TWI234830B (zh) |
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-
2002
- 2002-06-03 JP JP2002161735A patent/JP3835352B2/ja not_active Expired - Fee Related
-
2003
- 2003-05-07 US US10/430,257 patent/US6936532B2/en not_active Expired - Fee Related
- 2003-05-13 TW TW092112988A patent/TWI234830B/zh not_active IP Right Cessation
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Also Published As
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US20030222343A1 (en) | 2003-12-04 |
CN100388449C (zh) | 2008-05-14 |
TWI234830B (en) | 2005-06-21 |
US6936532B2 (en) | 2005-08-30 |
TW200400573A (en) | 2004-01-01 |
JP3835352B2 (ja) | 2006-10-18 |
JP2004014565A (ja) | 2004-01-15 |
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