CN1457503A - 多晶硅栅极蚀刻后的无机抗反射涂层的干式各向同性移除 - Google Patents
多晶硅栅极蚀刻后的无机抗反射涂层的干式各向同性移除 Download PDFInfo
- Publication number
- CN1457503A CN1457503A CN01815622A CN01815622A CN1457503A CN 1457503 A CN1457503 A CN 1457503A CN 01815622 A CN01815622 A CN 01815622A CN 01815622 A CN01815622 A CN 01815622A CN 1457503 A CN1457503 A CN 1457503A
- Authority
- CN
- China
- Prior art keywords
- width
- antireflecting coating
- etching
- workpiece
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 30
- 239000006117 anti-reflective coating Substances 0.000 title abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 28
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 36
- 238000000576 coating method Methods 0.000 claims description 31
- 239000011248 coating agent Substances 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 150000003376 silicon Chemical class 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 5
- 230000004048 modification Effects 0.000 claims description 5
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000002253 acid Substances 0.000 abstract description 6
- 230000035939 shock Effects 0.000 abstract description 5
- 230000005669 field effect Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/660723 | 2000-09-13 | ||
US09/660,723 | 2000-09-13 | ||
US09/660,723 US6555397B1 (en) | 2000-09-13 | 2000-09-13 | Dry isotropic removal of inorganic anti-reflective coating after poly gate etching |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1457503A true CN1457503A (zh) | 2003-11-19 |
CN100452300C CN100452300C (zh) | 2009-01-14 |
Family
ID=24650712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018156223A Expired - Fee Related CN100452300C (zh) | 2000-09-13 | 2001-07-26 | 多晶硅栅极蚀刻后的无机抗反射涂层的干式各向同性移除 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6555397B1 (zh) |
EP (1) | EP1317768B1 (zh) |
JP (1) | JP2004509463A (zh) |
KR (1) | KR100768581B1 (zh) |
CN (1) | CN100452300C (zh) |
AU (1) | AU2001278030A1 (zh) |
DE (1) | DE60138469D1 (zh) |
WO (1) | WO2002023605A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100338761C (zh) * | 2004-01-02 | 2007-09-19 | 因芬尼昂技术股份公司 | 制造层顺序方法及制造集成电路方法 |
CN101459066B (zh) * | 2007-12-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 栅极、浅沟槽隔离区形成方法及硅基材刻蚀表面的平坦化方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI610361B (zh) | 2015-06-26 | 2018-01-01 | 東京威力科創股份有限公司 | 具有可控制的含矽抗反射塗層或矽氮氧化物相對於不同薄膜或遮罩之蝕刻選擇性的氣相蝕刻 |
US9748268B1 (en) | 2016-09-07 | 2017-08-29 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0394597A1 (en) * | 1989-04-28 | 1990-10-31 | International Business Machines Corporation | Follow-up System for Monitoring the Etching Process in an RIE Equipment and its Application to Producing High-resolution and Reproducible Patterns |
JP3402022B2 (ja) | 1995-11-07 | 2003-04-28 | 三菱電機株式会社 | 半導体装置の製造方法 |
US6010829A (en) * | 1996-05-31 | 2000-01-04 | Texas Instruments Incorporated | Polysilicon linewidth reduction using a BARC-poly etch process |
JPH10335661A (ja) * | 1997-05-30 | 1998-12-18 | Sony Corp | 半導体装置の製造方法 |
US5883011A (en) | 1997-06-18 | 1999-03-16 | Vlsi Technology, Inc. | Method of removing an inorganic antireflective coating from a semiconductor substrate |
US6107172A (en) | 1997-08-01 | 2000-08-22 | Advanced Micro Devices, Inc. | Controlled linewidth reduction during gate pattern formation using an SiON BARC |
US6165375A (en) * | 1997-09-23 | 2000-12-26 | Cypress Semiconductor Corporation | Plasma etching method |
US6066567A (en) | 1997-12-18 | 2000-05-23 | Advanced Micro Devices, Inc. | Methods for in-situ removal of an anti-reflective coating during an oxide resistor protect etching process |
US6013570A (en) | 1998-07-17 | 2000-01-11 | Advanced Micro Devices, Inc. | LDD transistor using novel gate trim technique |
JP3257533B2 (ja) * | 1999-01-25 | 2002-02-18 | 日本電気株式会社 | 無機反射防止膜を使った配線形成方法 |
JP2000221698A (ja) * | 1999-01-29 | 2000-08-11 | Sony Corp | 電子装置の製造方法 |
US6200863B1 (en) * | 1999-03-24 | 2001-03-13 | Advanced Micro Devices, Inc. | Process for fabricating a semiconductor device having assymetric source-drain extension regions |
US6187644B1 (en) * | 1999-09-08 | 2001-02-13 | United Microelectronics Corp. | Method of removing oxynitride by forming an offset spacer |
US6350390B1 (en) * | 2000-02-22 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd | Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control |
US6303477B1 (en) * | 2001-04-04 | 2001-10-16 | Chartered Semiconductor Manufacturing Ltd | Removal of organic anti-reflection coatings in integrated circuits |
-
2000
- 2000-09-13 US US09/660,723 patent/US6555397B1/en not_active Expired - Lifetime
-
2001
- 2001-07-26 EP EP01955984A patent/EP1317768B1/en not_active Expired - Lifetime
- 2001-07-26 DE DE60138469T patent/DE60138469D1/de not_active Expired - Lifetime
- 2001-07-26 CN CNB018156223A patent/CN100452300C/zh not_active Expired - Fee Related
- 2001-07-26 WO PCT/US2001/023580 patent/WO2002023605A1/en active Application Filing
- 2001-07-26 KR KR1020037003595A patent/KR100768581B1/ko not_active IP Right Cessation
- 2001-07-26 AU AU2001278030A patent/AU2001278030A1/en not_active Abandoned
- 2001-07-26 JP JP2002527556A patent/JP2004509463A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100338761C (zh) * | 2004-01-02 | 2007-09-19 | 因芬尼昂技术股份公司 | 制造层顺序方法及制造集成电路方法 |
CN101459066B (zh) * | 2007-12-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 栅极、浅沟槽隔离区形成方法及硅基材刻蚀表面的平坦化方法 |
US8039402B2 (en) | 2007-12-13 | 2011-10-18 | Semiconductor Manufacturing International (Shanghai) Corporation | Methods for forming a gate and a shallow trench isolation region and for planarizating an etched surface of silicon substrate |
US8367554B2 (en) | 2007-12-13 | 2013-02-05 | Semiconductor Manufacturing International (Shanghai) Corporation | Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrate |
US8377827B2 (en) | 2007-12-13 | 2013-02-19 | Semiconductor Manufacturing International (Shanghai) Corporation | Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrate |
Also Published As
Publication number | Publication date |
---|---|
WO2002023605A1 (en) | 2002-03-21 |
EP1317768B1 (en) | 2009-04-22 |
AU2001278030A1 (en) | 2002-03-26 |
DE60138469D1 (de) | 2009-06-04 |
JP2004509463A (ja) | 2004-03-25 |
EP1317768A1 (en) | 2003-06-11 |
KR100768581B1 (ko) | 2007-10-22 |
KR20030051646A (ko) | 2003-06-25 |
US6555397B1 (en) | 2003-04-29 |
CN100452300C (zh) | 2009-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6924191B2 (en) | Method for fabricating a gate structure of a field effect transistor | |
US6187688B1 (en) | Pattern formation method | |
US6900002B1 (en) | Antireflective bi-layer hardmask including a densified amorphous carbon layer | |
US20070122753A1 (en) | Method for manufacturing semiconductor device | |
KR940008323B1 (ko) | 반도체장치의 층간접속방법 | |
KR100747671B1 (ko) | 드라이 에칭 방법 및 반도체 장치의 제조 방법 | |
CN100452300C (zh) | 多晶硅栅极蚀刻后的无机抗反射涂层的干式各向同性移除 | |
US6171940B1 (en) | Method for fabricating semiconductor devices having small dimension gate structures | |
US6703297B1 (en) | Method of removing inorganic gate antireflective coating after spacer formation | |
US5509995A (en) | Process for anisotropically etching semiconductor material | |
JP2903883B2 (ja) | 半導体装置の製造方法 | |
US6451706B1 (en) | Attenuation of reflecting lights by surface treatment | |
KR0162144B1 (ko) | 반도체 소자의 콘택홀 형성 방법 | |
KR100205095B1 (ko) | 반도체 소자의 비트라인 형성방법 | |
CN1287422C (zh) | 形成具有圆化边角的接触窗口的方法及半导体结构 | |
CN1336573A (zh) | 光刻蚀刻制作工艺 | |
KR0184939B1 (ko) | 반도체 소자의 본딩패드 형성방법 | |
KR100249384B1 (ko) | 접촉홀 형성방법 | |
KR20040005381A (ko) | 씨모스 이미지 센서 소자의 제조방법 | |
KR0144430B1 (ko) | 반도체 소자의 패턴 형성방법 | |
KR100223845B1 (ko) | 반도체 소자의 제조방법 | |
US20030203618A1 (en) | Manufacturing method for semiconductor device | |
KR100198645B1 (ko) | 반도체 소자의 패턴 방법 | |
KR100835520B1 (ko) | 반도체 소자의 제조방법 | |
KR100298427B1 (ko) | 반도체장치의제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20100705 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA, THE UNITED STATES TO: CAYMAN ISLANDS, BRITISH |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100705 Address after: Grand Cayman, Cayman Islands Patentee after: Globalfoundries Semiconductor Inc. Address before: American California Patentee before: Advanced Micro Devices Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20190726 |
|
CF01 | Termination of patent right due to non-payment of annual fee |