CN1455789A - 具有聚合网状结构的低介电常数材料 - Google Patents

具有聚合网状结构的低介电常数材料 Download PDF

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Publication number
CN1455789A
CN1455789A CN01815352A CN01815352A CN1455789A CN 1455789 A CN1455789 A CN 1455789A CN 01815352 A CN01815352 A CN 01815352A CN 01815352 A CN01815352 A CN 01815352A CN 1455789 A CN1455789 A CN 1455789A
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China
Prior art keywords
materials
advanced low
composition
poly
molecule
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Pending
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CN01815352A
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English (en)
Chinese (zh)
Inventor
K·劳
F·Q·刘
B·科罗勒夫
E·布罗克
R·泽雷宾
D·纳勒瓦杰克
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Honeywell International Inc
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Honeywell International Inc
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Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1455789A publication Critical patent/CN1455789A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/48—Polymers modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C08G65/40—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
    • C08G65/4012—Other compound (II) containing a ketone group, e.g. X-Ar-C(=O)-Ar-X for polyetherketones
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterized by the type of post-polymerisation functionalisation
    • C08G2650/20—Cross-linking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/60—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing acetylenic group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2312/00—Crosslinking

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Polyethers (AREA)
  • Organic Insulating Materials (AREA)
CN01815352A 2000-07-19 2001-07-12 具有聚合网状结构的低介电常数材料 Pending CN1455789A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/619,237 2000-07-19
US09/619,237 US6423811B1 (en) 2000-07-19 2000-07-19 Low dielectric constant materials with polymeric networks

Publications (1)

Publication Number Publication Date
CN1455789A true CN1455789A (zh) 2003-11-12

Family

ID=24481046

Family Applications (1)

Application Number Title Priority Date Filing Date
CN01815352A Pending CN1455789A (zh) 2000-07-19 2001-07-12 具有聚合网状结构的低介电常数材料

Country Status (8)

Country Link
US (2) US6423811B1 (enExample)
EP (1) EP1303550A4 (enExample)
JP (1) JP2004504424A (enExample)
KR (1) KR20030022291A (enExample)
CN (1) CN1455789A (enExample)
AU (1) AU2001273464A1 (enExample)
TW (1) TW553967B (enExample)
WO (1) WO2002006366A1 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
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US20020022708A1 (en) * 2000-07-19 2002-02-21 Honeywell International Inc. Compositions and methods for thermosetting molecules in organic compositions
US6423811B1 (en) * 2000-07-19 2002-07-23 Honeywell International Inc. Low dielectric constant materials with polymeric networks
US6783589B2 (en) * 2001-01-19 2004-08-31 Chevron U.S.A. Inc. Diamondoid-containing materials in microelectronics
US7141188B2 (en) * 2001-05-30 2006-11-28 Honeywell International Inc. Organic compositions
US6740685B2 (en) * 2001-05-30 2004-05-25 Honeywell International Inc. Organic compositions
CA2443846A1 (en) * 2001-12-31 2003-07-17 Honeywell International Inc. Organic compositions
US20030143332A1 (en) * 2002-01-31 2003-07-31 Sumitomo Chemical Company, Limited Coating solution for forming insulating film
JP2003268101A (ja) 2002-03-15 2003-09-25 Sumitomo Chem Co Ltd ポリエーテル樹脂及びその製造方法
US7060204B2 (en) * 2002-04-29 2006-06-13 Honeywell International Inc. Organic compositions
TW200416131A (en) * 2002-06-03 2004-09-01 Honeywell Int Inc Layered components, materials, methods of production and uses thereof
US7368483B2 (en) * 2002-12-31 2008-05-06 International Business Machines Corporation Porous composition of matter, and method of making same
JP2004307828A (ja) * 2003-03-27 2004-11-04 Sumitomo Chem Co Ltd 絶縁膜形成用塗布液、絶縁膜の製造方法および絶縁膜
JP2006104375A (ja) * 2004-10-07 2006-04-20 Sumitomo Chemical Co Ltd 絶縁膜形成用塗布液、絶縁膜の製造方法および絶縁膜
US7732496B1 (en) 2004-11-03 2010-06-08 Ohio Aerospace Institute Highly porous and mechanically strong ceramic oxide aerogels
US7531209B2 (en) * 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
US7432133B2 (en) * 2005-10-24 2008-10-07 Freescale Semiconductor, Inc. Plastic packaged device with die interface layer
US7435625B2 (en) * 2005-10-24 2008-10-14 Freescale Semiconductor, Inc. Semiconductor device with reduced package cross-talk and loss
US20070090545A1 (en) * 2005-10-24 2007-04-26 Condie Brian W Semiconductor device with improved encapsulation
WO2007143028A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Low dielectric constant materials prepared from soluble fullerene clusters
US7883742B2 (en) * 2006-05-31 2011-02-08 Roskilde Semiconductor Llc Porous materials derived from polymer composites
US7875315B2 (en) * 2006-05-31 2011-01-25 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
WO2007143026A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
US7811499B2 (en) * 2006-06-26 2010-10-12 International Business Machines Corporation Method for high density data storage and read-back
KR100819760B1 (ko) 2006-11-06 2008-04-07 (주)파인켐 테트라키스페닐계 유기발광화합물 및 이를 이용한유기전계발광소자
US7558186B2 (en) * 2007-01-02 2009-07-07 International Business Machines Corporation High density data storage medium, method and device
US20080159114A1 (en) * 2007-01-02 2008-07-03 Dipietro Richard Anthony High density data storage medium, method and device
US20080173541A1 (en) * 2007-01-22 2008-07-24 Eal Lee Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
US8258251B2 (en) * 2007-11-30 2012-09-04 The United States Of America, As Represented By The Administrator Of The National Aeronautics And Space Administration Highly porous ceramic oxide aerogels having improved flexibility
US8314201B2 (en) 2007-11-30 2012-11-20 The United States Of America As Represented By The Administration Of The National Aeronautics And Space Administration Highly porous ceramic oxide aerogels having improved flexibility
CA2733682C (en) * 2008-08-12 2014-10-14 Air Products And Chemicals, Inc. Polymeric compositions comprising per(phenylethynyl) arene derivatives
US9006353B2 (en) 2011-11-18 2015-04-14 Delsper LP Crosslinking compounds for high glass transition temperature polymers
CN102848642B (zh) * 2012-09-11 2016-01-13 广东生益科技股份有限公司 二层法双面挠性覆铜板及其制作方法
WO2014208324A1 (ja) * 2013-06-24 2014-12-31 Jsr株式会社 膜形成用組成物、レジスト下層膜及びその形成方法、パターン形成方法並びに化合物
EP3740188A1 (en) * 2017-12-18 2020-11-25 Tris Pharma, Inc. Pharmaceutical compositions comprising a floating interpenetrating polymer network forming system
US11337920B2 (en) 2017-12-18 2022-05-24 Tris Pharma, Inc. Pharmaceutical composition comprising GHB gastro-retentive raft forming systems having trigger pulse drug release

Family Cites Families (8)

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JP2906282B2 (ja) 1990-09-20 1999-06-14 富士通株式会社 ガラスセラミック・グリーンシートと多層基板、及び、その製造方法
JPH04314394A (ja) 1991-04-12 1992-11-05 Fujitsu Ltd ガラスセラミック回路基板とその製造方法
JP2531906B2 (ja) 1991-09-13 1996-09-04 インターナショナル・ビジネス・マシーンズ・コーポレイション 発泡重合体
US5177176A (en) 1991-10-29 1993-01-05 E. I. Du Pont De Nemours And Company Soluble pseudo rod-like polyimides having low coefficient of thermal expansion
US5629353A (en) 1995-05-22 1997-05-13 The Regents Of The University Of California Highly cross-linked nanoporous polymers
US5744399A (en) 1995-11-13 1998-04-28 Lsi Logic Corporation Process for forming low dielectric constant layers using fullerenes
US6423811B1 (en) * 2000-07-19 2002-07-23 Honeywell International Inc. Low dielectric constant materials with polymeric networks
US6451712B1 (en) 2000-12-18 2002-09-17 International Business Machines Corporation Method for forming a porous dielectric material layer in a semiconductor device and device formed

Also Published As

Publication number Publication date
WO2002006366A1 (en) 2002-01-24
EP1303550A1 (en) 2003-04-23
KR20030022291A (ko) 2003-03-15
US20020037941A1 (en) 2002-03-28
EP1303550A4 (en) 2003-07-30
TW553967B (en) 2003-09-21
AU2001273464A1 (en) 2002-01-30
US6423811B1 (en) 2002-07-23
US6713590B2 (en) 2004-03-30
JP2004504424A (ja) 2004-02-12

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