CN1440589A - 具有高功率附加效率的射频功率放大器 - Google Patents

具有高功率附加效率的射频功率放大器 Download PDF

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CN1440589A
CN1440589A CN01812177A CN01812177A CN1440589A CN 1440589 A CN1440589 A CN 1440589A CN 01812177 A CN01812177 A CN 01812177A CN 01812177 A CN01812177 A CN 01812177A CN 1440589 A CN1440589 A CN 1440589A
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R·A·梅克
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Panasonic Holdings Corp
Intel Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244—Stepped control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/004—Control by varying the supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/168—Two amplifying stages are coupled by means of a filter circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET

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Abstract

概括地说，本发明提供了一种在高输出功率下显示出高功率附加效率(PAE)的射频(RF)功率放大器。该功率放大器的设计基于开关晶体管或受电压控制(对应于场效应晶体管，即FET)或受电流控制(对应于双极晶体管)而不受两者同时控制这一观察结果。因此，激励放大器不需产生功率使末级以开关方式动作。这一观点同传统知识，即高效率功率放大器级间阻抗匹配设计概念正好相反。在电压和电流必然同时存在的通带(谐振)网络(例如RF功率放大器)中，不可能仅产生电压波形或电流波形。本发明的一个特点是，电压(或电流)波形幅值保持不变时，功率传递非但未最大化，功耗反而降低了。本发明的另一个特点是，激励级同末级均设计为开关操作方式。在此情况下，级间网络设计与E类输出级设计相似。然而，级间网络的目的不是在负载两端产生最大功率(如同E类输出级)，而是在激励级负载(即开关输入)两端产生最大电压。在该方案中，开关的输入激励应足够高，以降低激励级的工作电压。激励级工作电压的降低进一步降低了激励级的DC电源功率，从而提高了PAE。

Description

具有高功率附加效率的射频功率放大器
发明背景
1.发明领域
本发明涉及射频(RF)功率放大器。
2.现有技术
对于无线电通信装置如蜂窝电话、寻呼机、无线调制解调器等，电池寿命是一个重要的问题。射频传输尤其会消耗相当大的功率。造成如此大功耗的一个原因是功率放大器工作效率低。典型的无线通信用RF功率放大器的工作效率仅约为10％。显然，能够显著提高放大器效率的低成本技术可以满足这一迫切的需求。
功率放大器通常包含多级，例如一个输出末级以及一个或多个前置放大级或激励级。在输出末级的效率最大化方面，人们已经做了大量工作。如以引用方式并入本文的美国专利3,919,656所述，随着E类功率放大器的出现，输出末级的效率得到了显著的提高。在E类放大器中，开关的电流及电压波形被定相为在切换时上述两个参量中的一个位于或接近零，从而使功耗最小化。
E类放大器确定了以开关方式操作的功率放大器末级的操作及设计方法。因此，不言而谕，在RF功率放大器技术中，若要提高直流电源功率至输出功率的转换效率，放大器必须以非线性方式操作——而放大元件(例如晶体管)可能的最非线性操作方式为开关方式。的确，报道的开关方式RF功率放大器(例如E类)的输出效率(例如80％)显著高于AB类等适度非线性放大器(例如45％)。
要使RF功率放大器以开关方式操作，必须以重复方式激励输出晶体管在截止、全导通和再次截止之间快速切换。实现这种快速切换所需方法取决于选作开关的晶体管类型：对于场效应晶体管(FET)，控制参数为栅极源电压，而对于双极晶体管(BJT，HBT)，控制参数为基极-发射极电流。
为改善基本E类放大器的不同特性，曾尝试了多种设计。其中一种设计在1999年9月IEEE微波原理与技术会刊第9期第47卷中Chio等人合著的“场效应晶体管E类放大器物理分析模型-PAE最大化设计”(A Physically Based Analytic Model of PET Class-E PowerAmplifiers--Designing for Maximum PAE)一文中进行了说明，该文以引用方式并入本文参考。该文献模造了各种非理想FET开关模型，根据该模型可以得出较佳E类放大器设计的结论。根据所选方案，最大功率附加效率(PAE)(约55％)出现在0.5W或更低的功率级。在更高功率级，PAE急剧降低，例如在2W功率级，PAE不到30％。
功率放大器的PAE取决于实现末级输出功率所需最后26dB增益的直流电源功率值(在该增益等级上，通过激励信号输入至放大器的功率因不易测量而忽略)。就目前所知，尚没有能够在射频上产生1W或更高的输出功率同时又能够提供最小为26dB的功率增益的放大装置。因此，在末级之前必须设置一个或多个放大器，并且确定总PAE时须将上述功率放大器所耗DC功率包含在内。
传统设计方法要求放大器的设计者对激励电路输出阻抗和末级开关晶体管输入阻抗进行阻抗匹配。因此，激励级的实际输出功率要求取决于开关元件有效输入阻抗(通常较低)的工作电压(或电流)要求。由于阻抗的概念需要线性操作，而开关是极端非线性的，因此具体的开关晶体管输入阻抗是无法定义的。
图1给出了一个采用上述方法的RF放大器电路的实例。其中级间“L段”由电感器L1、分路电容器C及电感器L2组成，用于使激励级与假定的50ohm负载(即末级)相匹配。
上述传统方法将激励级与末级之间的非线性中间级作为线性网络对待。另外，传统方法使激励级与末级之间的功率传递最大化(阻抗匹配的期望结果)。因此，为产生FET(用作开关晶体管)所需的激励电压，激励器还须产生同相电流以提供阻抗匹配功率。
图2给出了另一个传统RF功率放大器电路的实例。该电路采用“谐振级间匹配”，其中激励级与末级通过一个耦合电容Ccpl耦联。
如上所述，传统的设计方法在高输出功率(例如2W，蜂窝电话的操作通常在该功率等级上进行)不能获得高PAE。因此，需要一种能在较高输出功率显示出高PAE的RF功率放大器。
发明概要
概括地说，本发明提供了一种可在高输出功率显示出高PAE的RF功率放大器。该功率放大器的设计基于开关晶体管或受电压控制(对应于场效应晶体管，即FET)或受电流控制(对应于双极晶体管)而不同时受二者控制这一观察结果，因此激励放大器不需产生功率以使末级以开关方式操作。这一观点同传统知识，即高效率功率放大器间级阻抗匹配设计概念正好相反。在电压和电流必然同时存在的通带(谐振)网络(例如RF功率放大器)中不可能仅产生电压波形或电流波形。本发明的一个特点是，电压(或电流)波形幅值保持不变时，功率传递非但未最大化，功耗却降低了。本发明的另一个特点是，激励级同末级均设计为开关方式，即级间网络的设计与E类输出级设计相似。但是级间网络的目的不是在负载两端产生最大功率(如同E类输出级)，而是在激励器负载两端产生最大电压(即开关输入)。在该方案中，开关的输入激励应足够高，以降低激励级的工作电压。激励级工作电压的降低进一步降低了激励器的DC电源功率，从而提高了PAE。
附图简单说明
结合附图阅读下述说明可以更好地理解本发明。在附图中：
图1为一个传统RF功率放大器电路示意图；
图2为另一个传统RF功率放大器电路示意图；
图3为一个本发明功率放大器电路示意图；
图4为图3所示放大器电路的特定节点波形图。
较佳实施例的详细说明
请参阅图3，该图为一个示范性实施例的RF功率放大器电路示意图。其中一个包含耦合电容器C1、电容器C2及电感器L1的输入匹配电路被用于设定电路的输入阻抗。虽然在其它实施例中激励级M1及末级M2可能采用双极晶体管，但该图中显示为FET。FET M1的漏极通过一个包含RF扼流圈L3及电容C5的漏极偏压网络耦联至电源电压Vd1。同样，FET M2的漏极通过一个包含RF扼流圈L7及电容C10的漏极偏压网络耦联至电源电压Vd2。
级M1及M2分别配有相应的栅极偏压网络。就级M1来说，栅极偏压网络包含通过一个公用节点连接至电压Vg1的电感器L1、电容C3和电容C4。就级M2来说，栅极偏压网络包含通过一个公用节点连接至电压Vg2的电感器L6、电容C8及电容C9。
激励级与末级通过级间网络耦联，此处所示级间网络为一包含电感器L4和电容C6的串联LC组合，其参数的选择使得其可与末级M2的输入阻抗产生谐振。末级M2耦联至一传统负载网络，其在本实例中为一包含电容C11、电感器L8及电容C12的CLC Pi网络，其参数应根据末级M2的特性确定。
在一个示范性实施例中，元件的参数(电容单位为皮法，电感单位为那亨)如下：
                             表1
  电容     pf     电感     nh     电压     V
    C1     27     L1     8.2     Vd1     3.3
    C2     10     L2     33     Vd2     3.2
    C3     0.01     L3     33     Vg1     -1.53
    C4     27     L4     4.7     Vg2     -1.27
    C5     27     L5     NA
    C6     27     L6     39
    C7     NA     L7     15
    C8     27     L8     2.7
    C9     0.01
    C10     27
    C11     1.5
    C12     5.6
在图3的实例中，激励级即级M1以开关方式操作。参见图4，其中波形图显示了节点A处级M2的输入电压、节点B处级M1的漏极电压、节点C处级M2的漏极电压、节点D处级M1的漏极电流及节点E处级M2的漏极电流。请注意，末级即级M2的栅极电压(波形A)的峰值明显大于传统设计。
在该方案中，开关的输入激励应足够高，以降低激励级的工作电压。激励级工作电压的降低进一步降低了激励器的DC电源功率，从而提高了PAE。
采用上述电路，2W输出功率时测得的PAE为72％。
应了解，所属领域的技术人员可以在不违背其精神及本质特征的前提下以其它具体形式实施本发明。此处所揭示的实施例应视为说明性而非限制性实施例。本发明的范围为随附权利要求所述范围，而不是上述说明，并且其等效意义和范围内的所有改进均包含在本发明范围之内。

Claims (6)

1.一种操作具有一个最终放大级及一个前置的激励放大级的RF放大器的方法，其包含：
以开关方式操作该激励放大级；以及
采用一个包含一个串联谐振电路的级间网络将该激励放大级耦联至该最终放大级。
2.如权利要求1所述的方法，其中该级间网络包含一个串联LC谐振电路。
3.一种操作具有一个最终放大级的RF放大器的方法，其包含：
在激励放大级前配置一个激励放大级；以及
以开关方式操作该激励放大级。
4.一个RF功率放大器，其包含：
一个最终放大级；
一个置于该最终放大级前的激励放大级；以及
一个耦联该激励放大级与该最终放大级的级间网络，该级间网络包含一个串联谐振电路。
5.如权利要求4所述的装置，其中该级间网络包含一个串联LC电路。
6.如权利要求4所述的装置，其进一步包含以开关方式操作该激励放大级的装置。
CNB018121772A 2000-05-04 2001-05-02 具有高功率附加效率的射频功率放大器 Expired - Fee Related CN1201482C (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101107775B (zh) * 2004-12-31 2010-05-12 克里公司 高效率开关模式功率放大器
CN102104365A (zh) * 2009-12-22 2011-06-22 雅马哈株式会社 功率放大电路、dc-dc转换器、峰值保持电路和输出电压控制电路
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CN102104365A (zh) * 2009-12-22 2011-06-22 雅马哈株式会社 功率放大电路、dc-dc转换器、峰值保持电路和输出电压控制电路
CN104935268A (zh) * 2014-03-20 2015-09-23 株式会社村田制作所 功率放大模块
CN104935268B (zh) * 2014-03-20 2018-01-26 株式会社村田制作所 功率放大模块
CN107231134A (zh) * 2016-03-23 2017-10-03 英飞凌科技股份有限公司 具有可选择阻抗的功率放大器的lc网络

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CN1201482C (zh) 2005-05-11
TW511330B (en) 2002-11-21
US7265618B1 (en) 2007-09-04
WO2001084704A3 (en) 2002-10-03
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WO2001084704A2 (en) 2001-11-08

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