AU2001259408A1 - Rf power amplifier having high power-added efficiency - Google Patents

Rf power amplifier having high power-added efficiency

Info

Publication number
AU2001259408A1
AU2001259408A1 AU2001259408A AU5940801A AU2001259408A1 AU 2001259408 A1 AU2001259408 A1 AU 2001259408A1 AU 2001259408 A AU2001259408 A AU 2001259408A AU 5940801 A AU5940801 A AU 5940801A AU 2001259408 A1 AU2001259408 A1 AU 2001259408A1
Authority
AU
Australia
Prior art keywords
power
added efficiency
power amplifier
high power
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001259408A
Other languages
English (en)
Inventor
Ronald A. Meck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tropian Inc
Original Assignee
Tropian Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tropian Inc filed Critical Tropian Inc
Publication of AU2001259408A1 publication Critical patent/AU2001259408A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244—Stepped control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/004—Control by varying the supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/168—Two amplifying stages are coupled by means of a filter circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
AU2001259408A 2000-05-04 2001-05-02 Rf power amplifier having high power-added efficiency Abandoned AU2001259408A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/564,548 US7265618B1 (en) 2000-05-04 2000-05-04 RF power amplifier having high power-added efficiency
US09/564,548 2000-05-04
PCT/US2001/014258 WO2001084704A2 (en) 2000-05-04 2001-05-02 Rf power amplifier having high power-added efficiency

Publications (1)

Publication Number Publication Date
AU2001259408A1 true AU2001259408A1 (en) 2001-11-12

Family

ID=24254917

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001259408A Abandoned AU2001259408A1 (en) 2000-05-04 2001-05-02 Rf power amplifier having high power-added efficiency

Country Status (8)

Country Link
US (1) US7265618B1 (zh)
EP (1) EP1282939A2 (zh)
JP (1) JP2004518311A (zh)
KR (1) KR100831144B1 (zh)
CN (2) CN100472944C (zh)
AU (1) AU2001259408A1 (zh)
TW (1) TW511330B (zh)
WO (1) WO2001084704A2 (zh)

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JP2002171138A (ja) 2000-12-01 2002-06-14 Nec Corp マイクロ波電力増幅器
DE10161743B4 (de) 2001-12-15 2004-08-05 Hüttinger Elektronik GmbH & Co. KG Hochfrequenzanregungsanordnung
US7236053B2 (en) * 2004-12-31 2007-06-26 Cree, Inc. High efficiency switch-mode power amplifier
US7199658B2 (en) * 2005-05-18 2007-04-03 International Business Machines Corporation Circuits and methods for implementing power amplifiers for millimeter wave applications
US7265619B2 (en) * 2005-07-06 2007-09-04 Raytheon Company Two stage microwave Class E power amplifier
US7583150B2 (en) 2007-03-20 2009-09-01 Viasat, Inc. Power efficient multistage amplifier and design method
JP2009094805A (ja) * 2007-10-09 2009-04-30 Sumitomo Electric Ind Ltd 増幅器
US7616000B2 (en) * 2007-11-15 2009-11-10 General Electric Company Ultra low output impedance RF power amplifier for parallel excitation
US7760018B2 (en) * 2007-12-31 2010-07-20 Tialinx, Inc. High-efficiency switching power amplifiers with low harmonic distortion
EP2164170A1 (en) * 2008-09-15 2010-03-17 Forschungsverbund Berlin E.V. Self-adjusting gate bias network for field effect transistors
KR101102128B1 (ko) * 2009-12-15 2012-01-02 서울대학교산학협력단 Ｅ 급 전력 증폭기
US8823343B2 (en) * 2009-12-22 2014-09-02 Yamaha Corporation Power amplifying circuit, DC-DC converter, peak holding circuit, and output voltage control circuit including the peak holding circuit
WO2013009640A2 (en) 2011-07-08 2013-01-17 Skyworks Solutions, Inc. Signal path termination
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
KR101767718B1 (ko) 2011-11-04 2017-08-11 스카이워크스 솔루션즈, 인코포레이티드 전력 증폭기들에 대한 장치 및 방법
US9876478B2 (en) 2011-11-04 2018-01-23 Skyworks Solutions, Inc. Apparatus and methods for wide local area network power amplifiers
CN103988424B (zh) * 2011-11-11 2017-03-08 天工方案公司 具有高功率附加效率的倒装芯片线性功率放大器
US8519791B1 (en) * 2012-03-09 2013-08-27 Texas Instruments Incorporated Free-fly class D power amplifier
KR101921686B1 (ko) 2012-06-14 2018-11-26 스카이워크스 솔루션즈, 인코포레이티드 와이어 본드 패드 및 관련된 시스템, 장치, 및 방법을 포함하는 전력 증폭기 모듈
US9367114B2 (en) 2013-03-11 2016-06-14 Intel Corporation Controlling operating voltage of a processor
JP6187444B2 (ja) * 2014-03-20 2017-08-30 株式会社村田製作所 電力増幅モジュール
US20160036392A1 (en) * 2014-07-30 2016-02-04 Qualcomm Incorporated Dual-band amplifier
JP2016163282A (ja) * 2015-03-05 2016-09-05 三菱電機株式会社 多段低雑音増幅器
US10050591B2 (en) * 2016-03-23 2018-08-14 Cree, Inc. LC network for a power amplifier with selectable impedance
US10069462B1 (en) * 2017-02-27 2018-09-04 Nxp Usa, Inc. Multiple-stage RF amplifier devices
EP3480945A1 (en) * 2017-11-06 2019-05-08 NXP USA, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10250197B1 (en) * 2017-11-06 2019-04-02 Nxp Usa, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10855235B2 (en) * 2017-12-27 2020-12-01 Murata Manufacturing Co., Ltd. Power amplifier circuit
CN109245737B (zh) * 2018-10-22 2024-05-14 东南大学 一种动态体偏置e类功率放大器
CN110708025B (zh) * 2019-09-30 2024-01-16 西安电子科技大学 利用二极管补偿电容的功率放大器
CN113792512B (zh) * 2021-08-24 2024-04-05 天津大学 一种复合型分立半导体晶体管

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US3919656A (en) 1973-04-23 1975-11-11 Nathan O Sokal High-efficiency tuned switching power amplifier
US4771247A (en) * 1987-09-24 1988-09-13 General Electric Company MMIC (monolithic microwave integrated circuit) low noise amplifier
US4967109A (en) * 1989-12-08 1990-10-30 General Electric Company High efficiency gate driver circuit for a high frequency converter
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US5818880A (en) * 1990-03-30 1998-10-06 Honeywell Inc. MMIC telemetry transmitter
JPH0454006A (ja) 1990-06-22 1992-02-21 Fujitsu Ltd 増幅装置
US5151852A (en) * 1991-03-08 1992-09-29 Raytheon Company Class E power amplifier
US5179511A (en) * 1991-10-16 1993-01-12 Illinois Institute Of Technology Self-regulating class E resonant power converter maintaining operation in a minimal loss region
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JPH06260864A (ja) * 1993-03-08 1994-09-16 Matsushita Electric Ind Co Ltd 送信出力増幅器
JPH0851327A (ja) * 1994-08-08 1996-02-20 Hitachi Ltd 高周波増幅装置
KR0129844B1 (ko) * 1994-12-21 1998-10-01 양승택 아날로그 및 디지털 휴대용 전화기 겸용 전력증폭기
JP2994231B2 (ja) * 1995-06-30 1999-12-27 日本電気株式会社 半導体装置
CN1081850C (zh) 1995-09-29 2002-03-27 松下电器产业株式会社 功率放大器和通信单元
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FR2763183A1 (fr) * 1997-05-07 1998-11-13 Philips Electronics Nv Dispositif incluant un circuit amplificateur large-bande
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Also Published As

Publication number Publication date
JP2004518311A (ja) 2004-06-17
TW511330B (en) 2002-11-21
CN1440589A (zh) 2003-09-03
US7265618B1 (en) 2007-09-04
WO2001084704A3 (en) 2002-10-03
KR20030014213A (ko) 2003-02-15
CN100472944C (zh) 2009-03-25
WO2001084704A2 (en) 2001-11-08
CN1201482C (zh) 2005-05-11
KR100831144B1 (ko) 2008-05-20
CN1702959A (zh) 2005-11-30
EP1282939A2 (en) 2003-02-12

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