TW511330B - RF power amplifier having high power-added efficiency - Google Patents
RF power amplifier having high power-added efficiency Download PDFInfo
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- TW511330B TW511330B TW090110740A TW90110740A TW511330B TW 511330 B TW511330 B TW 511330B TW 090110740 A TW090110740 A TW 090110740A TW 90110740 A TW90110740 A TW 90110740A TW 511330 B TW511330 B TW 511330B
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- 238000013461 design Methods 0.000 abstract description 11
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- 239000003990 capacitor Substances 0.000 description 15
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- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
- H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0244—Stepped control
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/004—Control by varying the supply voltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/168—Two amplifying stages are coupled by means of a filter circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Description
511330 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(1 發明背景 1. 發明範圍 本發明係屬於射頻功率放大器。 2. 技藝説明 電池之壽命與諸如蜂巢式電話’分頁器,無線數據機, 等之無線通信裝置有關。特別是射頻之傳送,消耗相者大 之電力。此種電力消耗貢獻因爲無效率之功率放大器二作 。一標準之用於無線通信之射頻功率放大器之操作僅約有 10%之效率。明顯的,對大量提升放大器放率之一低費用 之技術將可滿足此一特別之需要。 一功率放大器一般包括多級之放大,例如一最後輸出級 及一個或多個前置放大器或驅動器級。最大化最後輸出級 之效率上必需有許多工作要做。一重要之最後輸出級效率 之改善爲由具有E級功率放大器之向無來達成,並説明引美 國專利3,919,656中,此處以提及方式併入本文。在E級放 大器中,一開關之電流及電壓波形當在切換馬達或近於零 之二個量時被加以移相以便減低功率之消耗。 E級放大器建1在按開關-模式操作之一放大器之最後級 之操作及設計上。其結果,即已知之改善供給直流電力至 輸出電力之轉換效率之射頻功率放大器之技藝,放大器必 需按一非線性方式來操作_ β多爲非線性操作之可能之一放 大元件(諸如一電晶體)其操作如同一開關來操作。的確, 開關-模式射頻功率放大器(如E級)所記錄載有之輸出效率 (如80%)較輕度非線性諸如AB級(如45%)有明顯的較高。 4- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公t ) (請先朋讀背面之注意事項再填寫本頁) 裝 511330 A7 _B7_ 五、發明說明(2 ) 依開關模式來操作一射頻功率放大器,有必要按一重複 之方式在截止與全面關入之間迅速的來驅動輸出電晶體然 後再回至截止。獲得此種以完成此種動作之裝置根據所選 擇使用之如同開關動作之電晶體之型式有關。對一場效電 晶體(FET)言,控制之參數爲閘極·源極電壓,及對一雙極 電晶體言(B JT,HBT)控制之參數爲基極-射極之電流。 此種多種設計爲合圖對基本之E級放大器之不同方面來 改善。此種設計之一爲周等人在電氣電子工程師學會微波 理論及技術報導,第47册第9,199年9月之n—FET E級功率 放大器之實質基本之分析模式--一用於最大PAE"設計”已 予以説明。此處以提及方式併入本文。此一提供之模式多 種非-理想之FET開關及經由此種模式來導出此種有利之E 級放大器之結論。採選取布局,後有55%之最大功率加上 之效率,並發生在二分之一瓦特或較低之功率位準上。在 較高之功率時,如在2瓦特時PAE成迅速之下降並低於30%。 經濟部智慧財產局員工消費合作社印製 π裝· (請先閱讀背面之注意事項再填寫本頁) 一功率放大器之PAE由實現最少26 dB增益所需之直流 供給電力之量來設定以獲得最後輸出功率(在此一增益位 準上經驅動信號輸入至放大器之功率--爲不容易測定之量 --應爲可忽略者)在此呈現下,無已知之放大器裝置能無線 電頻率上能產生1瓦或以上之輸出功率且仍能提供至少26 dB之功率增益之能力。同樣,在最後級之前必需提供一個 或多個放大器及由此種放大器所消耗之直流功率必需包括 在決定之全部PAE内。 慣常之設計技巧要求一放大器設計者對該驅動器輸出阻 •5- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) A7 B7 五 發明說明(3 抗與最後級切換電晶體之輸入阻抗做阻阬-匹配。因之自驅 T-裝· I I (請先閱讀背面之注意事項再填寫本頁) 動器級所要求之實際之輸出功率爲由操作至切換元件内之 有政(輸入阻抗内所需之電壓(或電流)(通常爲低)來限定 。由於阻抗需要求線性操作之概念,且_開關爲_極非線 ,者故-用於切換電晶體之輸人特定之阻抗爲非常不能限 定者。 视饮取无則途徑之一射頻放大器電路之舉例示之於圖 1。一中間級"L段"包括利用一電感器L1,一併按電容器c 及一電感器L2將驅動器級來匹配假設有5〇歐姆之 (即,最後級)。 、 此一慣常之技巧視驅動與最後級之間之中間級如同 :之:路’但實際並非如此。甚至’慣常之技巧爲將驅動 及取後級間(一意圖之阻抗匹配順序)之功率最大化。如 此,,以例示之,爲了用於獲得一如同切換電晶體般之= 之所要求(驅動電壓’驅動器亦必需獲得來提供阻抗-匹配 功率之相同之電流。 另一慣常之射頻放大器電路之舉例示之於圖2。此—泰路 使用"共振中間級匹配"其中利用一耦合電容 :人 經濟部智慧財產局員工消費合作社印製 驅動級與最後級。 Ρ水稱口 ,應注意,慣常之設計技巧達成在高輸出功率(即,2瓦, 當在一蜂巢式電話操作時普通所遇到之一功率位準失 敗的,故因之一種在相對較高輸出功疋 卞r仔在顯示有高 PAE之射頻功率放大器是有需要的。 -6
511330 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(4 ) 發明總結
本發明,一般講,爲提供一在高輸出功率上顯示有高pAE 之射頻功率放大器。功率放大器之設計基於被控制之切換 電晶體不是由電壓(對一 FET電晶體言)即是由電流(對一雙 極電晶體1 )來控制但非由二者來控制之觀察而得。因之, 無必要自驅動器放大器來獲得電力以便如同一開關般來操 作取後級。此一 I忍知與慣常之了解,即,對高效率放大器 之中間級設計阻抗來匹配之概念完全相抿觸。故在一諸如 一射頻功率放大器__電壓及電流二種均存在下之通頻帶( 共振)網路中獲得一單獨之電壓波形或電流波形是不可能 的。按照發明之一方面,當維持電壓(或電流)波形之大小 時,代替最大化功率轉換,可減低功率消耗。按照發明之 另一方面,驅動器被設計爲,隨同最後級一起,按開關模 式來操作。在此一情形,中間級網路之設計與一 £級輸出級 相似。在中間級網路中,無論如何,目的不爲獲得跨負載( 如E級輸出級之情況)之最大功率。目的寧爲獲得跨於驅動 器負载之取南%壓(舄開關輸出電壓)。此一配置,開關之 輸入驅動可能爲足夠之高驅動器級之操作電壓可被降低。 此種降低進一步減低了送至驅動器之直流供應電力而提高 t PAE 〇 圖面主要説明 本發明可自以下之説明及連同利用所附之圖面而獲得進 一步之了解。圖面中: 圖1爲一慣常之射頻功率放大器電路之圖解圖; <請先閱讀背面之注意事項再填寫本頁) 裝 r V 丁 「
< JLU V A7 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明(5 ) 圖2爲另一慣常之射頻功率放大器電路之圖解圖; 圖3爲按照本發明之一射頻功率放大器電路之圖解圖;及 圖4爲圖3之放大器電路在選擇之節點上所顯示發生之波 形之波形圖。 所選具體實施例之詳細説明 觀參見圖3,爲一按照一舉例之具體實施例之一射頻功率 放大器電路之圖解圖。一輸入匹配電路包含有使用來設定 電路之輸入阻抗之一耦合電容器q,一電容器^及一電感 器!^。一驅動器級%及一示出如FET電晶體之最後級μ:, 雖然在另一具體實施例中亦可能使用雙極電晶體。FET % 之汲極電極經一包括有一射頻阻抗線圈、及一電容器\之 汲極偏壓網路耦合至供給電壓上。相同之汲極 電極經一包括一射頻阻抗線圈、及一電容器。之2汲極偏 壓耦合至供應電壓V上。 d2 閘偏壓網路各自提供至級%及撾2。在級%之情況,閘偏 壓網路由一電感器La,一電容EC3及一電容器^在一共同 節點上連接至-電壓Vgi來組成。在級%之情況,閘偏壓網 路由一電感器L0,一電容器I及一電容器丨在一共同節胃占 上連接至一電壓vg2所組成。 驅動級及最後級之間由一中間級網路來耦合,示於此處 如一電容器L4及一電容器q之一串聯£(:之合併所組成,其 所選取之値爲使提供最後級Μ:之輸入之輸入電容量能爲提 供一共振之値。最後級%耦合至慣常之負載網路上,如本 舉例所示之一由一電容器cn,一電感器、及―電容器c 1·裝·丨丨 (請先閲讀背面之注意事項再填寫本頁) 訂: -8 511330 A7 ____ Β7______ 五、發明說明(6 ) 所組成之CLC Pi網路。其中之値由按照最後級M22特性來 決定之。 在一所選之具體實施例中,各元件之値如下,此處所測 得之電容量値按微微法拉第及所測得之電感量値按毫微亨 利來計。 表1 電容器 微微法拉第 電感器 毫微亨利 電壓 伏 27 L, 8.2 vdl 3.3 c2 10 l2 33 3.2 C3 0.01 Ls 33 V -1.53 C4 27 l4 4.7 Λ2Ί C5 27 Ls ΝΑ C6 27 h 39 C7 ΝΑ l7 15 一 C8 27 Ls叫 2.7 C9 0.01 / c10 . 27 Cu 1.5 C12 5.6 在圖3之舉例中,驅動器級%級爲開關模式之操作,請參 考圖4,示出在節點A上送出至%:之輸入電壓,在節點b上 9 - .紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱 《請先閱讀背面之注意事項再填寫本頁) · !丨 1 丨 — 丨訂·! ! ! 經濟部智慧財產局員工消費合作社印製 511330 A7 --------- -B7 五、發明說明(7 ) 之級%之汲極電壓,在節點c上級之汲極電壓,在節點〇 上之級Μι之汲極電流,及節點E上之級M2之汲極電流之波 形圖。注意最後級級]^“波形A)之閘電壓之峰値較慣常設計 者爲相當的大。此一配置,開關之驅動可能爲相當的高驅 動器之操作電壓可被減低。此一減低進一步減低了送至驅 動器之直流供應電力並提高PAE。 使用顯示之型式之電路,在一 2瓦特之輸出電力上可測得 有 72%之PAE。 對於熟於此一技藝之士將瞭解發明在不違其精神及主要 特性下可能有其他特定之形式被具體實施。因之所提出揭 示之具體實施例應視爲顯示而非限制。發明之範圍應由所 附之專利申請範圍所指定者而非先前之陳述,所有在意義 上及其相等之範圍内之變動應包括在其内。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -10- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- 修止A8 B8 弟090110740號專利申請案 中文申請專利範園修正本(91年9月) 申請專利範園 •種操#纟有-最後放大級及一在冑的驅動器放大 級之射頻放大器之方法,包含: 按開關模式來操作之驅動器放大級;及 利用一中間級網路將驅動器放大級耦合至最後放大 級,該中間級網路包含一串聯共振電路。 2·如申請專利範圍第丨項之方法,其中間級網路包含一串 聯LC電路。 3· —種操作一具有一最後放大級之射頻放大器之方法, 包含: 在驅動器放大器之前提供一驅動器放大器級;及 按開關挺式來挺作該驅動器放大級。 4· 一種射頻功率放大器,包含: 一最後放大級; 一最後放大級之前之驅動器放大級;及 一耦合至驅動器放大級及最後放大級之中間級網路 ,該中間級網路包含一串聯共振電路。 5·如申請專利範圍第4項之射頻功率放大器,其中中間級 網路包含一串聯LC電路。 6.如申請專利範圍第4項之射頻功率放大器,尚包含用於 按開關模式來操作驅動器放大級之裝置。 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐)
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US09/564,548 US7265618B1 (en) | 2000-05-04 | 2000-05-04 | RF power amplifier having high power-added efficiency |
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TW511330B true TW511330B (en) | 2002-11-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090110740A TW511330B (en) | 2000-05-04 | 2001-05-04 | RF power amplifier having high power-added efficiency |
Country Status (8)
Country | Link |
---|---|
US (1) | US7265618B1 (zh) |
EP (1) | EP1282939A2 (zh) |
JP (1) | JP2004518311A (zh) |
KR (1) | KR100831144B1 (zh) |
CN (2) | CN100472944C (zh) |
AU (1) | AU2001259408A1 (zh) |
TW (1) | TW511330B (zh) |
WO (1) | WO2001084704A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6614311B2 (en) | 2000-12-01 | 2003-09-02 | Nec Compound Semiconductor Devices, Ltd. | Micro-wave power amplifier |
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US7265619B2 (en) * | 2005-07-06 | 2007-09-04 | Raytheon Company | Two stage microwave Class E power amplifier |
US7583150B2 (en) | 2007-03-20 | 2009-09-01 | Viasat, Inc. | Power efficient multistage amplifier and design method |
JP2009094805A (ja) * | 2007-10-09 | 2009-04-30 | Sumitomo Electric Ind Ltd | 増幅器 |
US7616000B2 (en) * | 2007-11-15 | 2009-11-10 | General Electric Company | Ultra low output impedance RF power amplifier for parallel excitation |
US7760018B2 (en) * | 2007-12-31 | 2010-07-20 | Tialinx, Inc. | High-efficiency switching power amplifiers with low harmonic distortion |
EP2164170A1 (en) * | 2008-09-15 | 2010-03-17 | Forschungsverbund Berlin E.V. | Self-adjusting gate bias network for field effect transistors |
KR101102128B1 (ko) * | 2009-12-15 | 2012-01-02 | 서울대학교산학협력단 | E 급 전력 증폭기 |
US8823343B2 (en) * | 2009-12-22 | 2014-09-02 | Yamaha Corporation | Power amplifying circuit, DC-DC converter, peak holding circuit, and output voltage control circuit including the peak holding circuit |
WO2013009640A2 (en) | 2011-07-08 | 2013-01-17 | Skyworks Solutions, Inc. | Signal path termination |
US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
KR101767718B1 (ko) | 2011-11-04 | 2017-08-11 | 스카이워크스 솔루션즈, 인코포레이티드 | 전력 증폭기들에 대한 장치 및 방법 |
US9876478B2 (en) | 2011-11-04 | 2018-01-23 | Skyworks Solutions, Inc. | Apparatus and methods for wide local area network power amplifiers |
CN103988424B (zh) * | 2011-11-11 | 2017-03-08 | 天工方案公司 | 具有高功率附加效率的倒装芯片线性功率放大器 |
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KR101921686B1 (ko) | 2012-06-14 | 2018-11-26 | 스카이워크스 솔루션즈, 인코포레이티드 | 와이어 본드 패드 및 관련된 시스템, 장치, 및 방법을 포함하는 전력 증폭기 모듈 |
US9367114B2 (en) | 2013-03-11 | 2016-06-14 | Intel Corporation | Controlling operating voltage of a processor |
JP6187444B2 (ja) * | 2014-03-20 | 2017-08-30 | 株式会社村田製作所 | 電力増幅モジュール |
US20160036392A1 (en) * | 2014-07-30 | 2016-02-04 | Qualcomm Incorporated | Dual-band amplifier |
JP2016163282A (ja) * | 2015-03-05 | 2016-09-05 | 三菱電機株式会社 | 多段低雑音増幅器 |
US10050591B2 (en) * | 2016-03-23 | 2018-08-14 | Cree, Inc. | LC network for a power amplifier with selectable impedance |
US10069462B1 (en) * | 2017-02-27 | 2018-09-04 | Nxp Usa, Inc. | Multiple-stage RF amplifier devices |
EP3480945A1 (en) * | 2017-11-06 | 2019-05-08 | NXP USA, Inc. | Multiple-stage power amplifiers implemented with multiple semiconductor technologies |
US10250197B1 (en) * | 2017-11-06 | 2019-04-02 | Nxp Usa, Inc. | Multiple-stage power amplifiers implemented with multiple semiconductor technologies |
US10855235B2 (en) * | 2017-12-27 | 2020-12-01 | Murata Manufacturing Co., Ltd. | Power amplifier circuit |
CN109245737B (zh) * | 2018-10-22 | 2024-05-14 | 东南大学 | 一种动态体偏置e类功率放大器 |
CN110708025B (zh) * | 2019-09-30 | 2024-01-16 | 西安电子科技大学 | 利用二极管补偿电容的功率放大器 |
CN113792512B (zh) * | 2021-08-24 | 2024-04-05 | 天津大学 | 一种复合型分立半导体晶体管 |
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-
2000
- 2000-05-04 US US09/564,548 patent/US7265618B1/en not_active Expired - Lifetime
-
2001
- 2001-05-02 CN CNB200510055750XA patent/CN100472944C/zh not_active Expired - Fee Related
- 2001-05-02 EP EP01932924A patent/EP1282939A2/en not_active Withdrawn
- 2001-05-02 KR KR1020027014774A patent/KR100831144B1/ko not_active IP Right Cessation
- 2001-05-02 JP JP2001581410A patent/JP2004518311A/ja active Pending
- 2001-05-02 WO PCT/US2001/014258 patent/WO2001084704A2/en active Application Filing
- 2001-05-02 CN CNB018121772A patent/CN1201482C/zh not_active Expired - Fee Related
- 2001-05-02 AU AU2001259408A patent/AU2001259408A1/en not_active Abandoned
- 2001-05-04 TW TW090110740A patent/TW511330B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6614311B2 (en) | 2000-12-01 | 2003-09-02 | Nec Compound Semiconductor Devices, Ltd. | Micro-wave power amplifier |
Also Published As
Publication number | Publication date |
---|---|
JP2004518311A (ja) | 2004-06-17 |
CN1440589A (zh) | 2003-09-03 |
US7265618B1 (en) | 2007-09-04 |
WO2001084704A3 (en) | 2002-10-03 |
KR20030014213A (ko) | 2003-02-15 |
CN100472944C (zh) | 2009-03-25 |
WO2001084704A2 (en) | 2001-11-08 |
CN1201482C (zh) | 2005-05-11 |
KR100831144B1 (ko) | 2008-05-20 |
CN1702959A (zh) | 2005-11-30 |
EP1282939A2 (en) | 2003-02-12 |
AU2001259408A1 (en) | 2001-11-12 |
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