TW511330B - RF power amplifier having high power-added efficiency - Google Patents

RF power amplifier having high power-added efficiency Download PDF

Info

Publication number
TW511330B
TW511330B TW090110740A TW90110740A TW511330B TW 511330 B TW511330 B TW 511330B TW 090110740 A TW090110740 A TW 090110740A TW 90110740 A TW90110740 A TW 90110740A TW 511330 B TW511330 B TW 511330B
Authority
TW
Taiwan
Prior art keywords
power
stage
driver
amplifier
voltage
Prior art date
Application number
TW090110740A
Other languages
English (en)
Inventor
Ronald A Meck
Original Assignee
Tropian Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tropian Inc filed Critical Tropian Inc
Application granted granted Critical
Publication of TW511330B publication Critical patent/TW511330B/zh

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03CMODULATION
    • H03C5/00Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216Continuous control
    • H03F1/0222Continuous control by using a signal derived from the input signal
    • H03F1/0227Continuous control by using a signal derived from the input signal using supply converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244Stepped control
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/004Control by varying the supply voltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/168Two amplifying stages are coupled by means of a filter circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/18Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/504Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/75Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Description

511330 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(1 發明背景 1. 發明範圍 本發明係屬於射頻功率放大器。 2. 技藝説明 電池之壽命與諸如蜂巢式電話’分頁器,無線數據機, 等之無線通信裝置有關。特別是射頻之傳送,消耗相者大 之電力。此種電力消耗貢獻因爲無效率之功率放大器二作 。一標準之用於無線通信之射頻功率放大器之操作僅約有 10%之效率。明顯的,對大量提升放大器放率之一低費用 之技術將可滿足此一特別之需要。 一功率放大器一般包括多級之放大,例如一最後輸出級 及一個或多個前置放大器或驅動器級。最大化最後輸出級 之效率上必需有許多工作要做。一重要之最後輸出級效率 之改善爲由具有E級功率放大器之向無來達成,並説明引美 國專利3,919,656中,此處以提及方式併入本文。在E級放 大器中,一開關之電流及電壓波形當在切換馬達或近於零 之二個量時被加以移相以便減低功率之消耗。 E級放大器建1在按開關-模式操作之一放大器之最後級 之操作及設計上。其結果,即已知之改善供給直流電力至 輸出電力之轉換效率之射頻功率放大器之技藝,放大器必 需按一非線性方式來操作_ β多爲非線性操作之可能之一放 大元件(諸如一電晶體)其操作如同一開關來操作。的確, 開關-模式射頻功率放大器(如E級)所記錄載有之輸出效率 (如80%)較輕度非線性諸如AB級(如45%)有明顯的較高。 4- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公t ) (請先朋讀背面之注意事項再填寫本頁) 裝 511330 A7 _B7_ 五、發明說明(2 ) 依開關模式來操作一射頻功率放大器,有必要按一重複 之方式在截止與全面關入之間迅速的來驅動輸出電晶體然 後再回至截止。獲得此種以完成此種動作之裝置根據所選 擇使用之如同開關動作之電晶體之型式有關。對一場效電 晶體(FET)言,控制之參數爲閘極·源極電壓,及對一雙極 電晶體言(B JT,HBT)控制之參數爲基極-射極之電流。 此種多種設計爲合圖對基本之E級放大器之不同方面來 改善。此種設計之一爲周等人在電氣電子工程師學會微波 理論及技術報導,第47册第9,199年9月之n—FET E級功率 放大器之實質基本之分析模式--一用於最大PAE"設計”已 予以説明。此處以提及方式併入本文。此一提供之模式多 種非-理想之FET開關及經由此種模式來導出此種有利之E 級放大器之結論。採選取布局,後有55%之最大功率加上 之效率,並發生在二分之一瓦特或較低之功率位準上。在 較高之功率時,如在2瓦特時PAE成迅速之下降並低於30%。 經濟部智慧財產局員工消費合作社印製 π裝· (請先閱讀背面之注意事項再填寫本頁) 一功率放大器之PAE由實現最少26 dB增益所需之直流 供給電力之量來設定以獲得最後輸出功率(在此一增益位 準上經驅動信號輸入至放大器之功率--爲不容易測定之量 --應爲可忽略者)在此呈現下,無已知之放大器裝置能無線 電頻率上能產生1瓦或以上之輸出功率且仍能提供至少26 dB之功率增益之能力。同樣,在最後級之前必需提供一個 或多個放大器及由此種放大器所消耗之直流功率必需包括 在決定之全部PAE内。 慣常之設計技巧要求一放大器設計者對該驅動器輸出阻 •5- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) A7 B7 五 發明說明(3 抗與最後級切換電晶體之輸入阻抗做阻阬-匹配。因之自驅 T-裝· I I (請先閱讀背面之注意事項再填寫本頁) 動器級所要求之實際之輸出功率爲由操作至切換元件内之 有政(輸入阻抗内所需之電壓(或電流)(通常爲低)來限定 。由於阻抗需要求線性操作之概念,且_開關爲_極非線 ,者故-用於切換電晶體之輸人特定之阻抗爲非常不能限 定者。 视饮取无則途徑之一射頻放大器電路之舉例示之於圖 1。一中間級"L段"包括利用一電感器L1,一併按電容器c 及一電感器L2將驅動器級來匹配假設有5〇歐姆之 (即,最後級)。 、 此一慣常之技巧視驅動與最後級之間之中間級如同 :之:路’但實際並非如此。甚至’慣常之技巧爲將驅動 及取後級間(一意圖之阻抗匹配順序)之功率最大化。如 此,,以例示之,爲了用於獲得一如同切換電晶體般之= 之所要求(驅動電壓’驅動器亦必需獲得來提供阻抗-匹配 功率之相同之電流。 另一慣常之射頻放大器電路之舉例示之於圖2。此—泰路 使用"共振中間級匹配"其中利用一耦合電容 :人 經濟部智慧財產局員工消費合作社印製 驅動級與最後級。 Ρ水稱口 ,應注意,慣常之設計技巧達成在高輸出功率(即,2瓦, 當在一蜂巢式電話操作時普通所遇到之一功率位準失 敗的,故因之一種在相對較高輸出功疋 卞r仔在顯示有高 PAE之射頻功率放大器是有需要的。 -6
511330 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(4 ) 發明總結
本發明,一般講,爲提供一在高輸出功率上顯示有高pAE 之射頻功率放大器。功率放大器之設計基於被控制之切換 電晶體不是由電壓(對一 FET電晶體言)即是由電流(對一雙 極電晶體1 )來控制但非由二者來控制之觀察而得。因之, 無必要自驅動器放大器來獲得電力以便如同一開關般來操 作取後級。此一 I忍知與慣常之了解,即,對高效率放大器 之中間級設計阻抗來匹配之概念完全相抿觸。故在一諸如 一射頻功率放大器__電壓及電流二種均存在下之通頻帶( 共振)網路中獲得一單獨之電壓波形或電流波形是不可能 的。按照發明之一方面,當維持電壓(或電流)波形之大小 時,代替最大化功率轉換,可減低功率消耗。按照發明之 另一方面,驅動器被設計爲,隨同最後級一起,按開關模 式來操作。在此一情形,中間級網路之設計與一 £級輸出級 相似。在中間級網路中,無論如何,目的不爲獲得跨負載( 如E級輸出級之情況)之最大功率。目的寧爲獲得跨於驅動 器負载之取南%壓(舄開關輸出電壓)。此一配置,開關之 輸入驅動可能爲足夠之高驅動器級之操作電壓可被降低。 此種降低進一步減低了送至驅動器之直流供應電力而提高 t PAE 〇 圖面主要説明 本發明可自以下之説明及連同利用所附之圖面而獲得進 一步之了解。圖面中: 圖1爲一慣常之射頻功率放大器電路之圖解圖; <請先閱讀背面之注意事項再填寫本頁) 裝 r V 丁 「
< JLU V A7 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明(5 ) 圖2爲另一慣常之射頻功率放大器電路之圖解圖; 圖3爲按照本發明之一射頻功率放大器電路之圖解圖;及 圖4爲圖3之放大器電路在選擇之節點上所顯示發生之波 形之波形圖。 所選具體實施例之詳細説明 觀參見圖3,爲一按照一舉例之具體實施例之一射頻功率 放大器電路之圖解圖。一輸入匹配電路包含有使用來設定 電路之輸入阻抗之一耦合電容器q,一電容器^及一電感 器!^。一驅動器級%及一示出如FET電晶體之最後級μ:, 雖然在另一具體實施例中亦可能使用雙極電晶體。FET % 之汲極電極經一包括有一射頻阻抗線圈、及一電容器\之 汲極偏壓網路耦合至供給電壓上。相同之汲極 電極經一包括一射頻阻抗線圈、及一電容器。之2汲極偏 壓耦合至供應電壓V上。 d2 閘偏壓網路各自提供至級%及撾2。在級%之情況,閘偏 壓網路由一電感器La,一電容EC3及一電容器^在一共同 節點上連接至-電壓Vgi來組成。在級%之情況,閘偏壓網 路由一電感器L0,一電容器I及一電容器丨在一共同節胃占 上連接至一電壓vg2所組成。 驅動級及最後級之間由一中間級網路來耦合,示於此處 如一電容器L4及一電容器q之一串聯£(:之合併所組成,其 所選取之値爲使提供最後級Μ:之輸入之輸入電容量能爲提 供一共振之値。最後級%耦合至慣常之負載網路上,如本 舉例所示之一由一電容器cn,一電感器、及―電容器c 1·裝·丨丨 (請先閲讀背面之注意事項再填寫本頁) 訂: -8 511330 A7 ____ Β7______ 五、發明說明(6 ) 所組成之CLC Pi網路。其中之値由按照最後級M22特性來 決定之。 在一所選之具體實施例中,各元件之値如下,此處所測 得之電容量値按微微法拉第及所測得之電感量値按毫微亨 利來計。 表1 電容器 微微法拉第 電感器 毫微亨利 電壓 伏 27 L, 8.2 vdl 3.3 c2 10 l2 33 3.2 C3 0.01 Ls 33 V -1.53 C4 27 l4 4.7 Λ2Ί C5 27 Ls ΝΑ C6 27 h 39 C7 ΝΑ l7 15 一 C8 27 Ls叫 2.7 C9 0.01 / c10 . 27 Cu 1.5 C12 5.6 在圖3之舉例中,驅動器級%級爲開關模式之操作,請參 考圖4,示出在節點A上送出至%:之輸入電壓,在節點b上 9 - .紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱 《請先閱讀背面之注意事項再填寫本頁) · !丨 1 丨 — 丨訂·! ! ! 經濟部智慧財產局員工消費合作社印製 511330 A7 --------- -B7 五、發明說明(7 ) 之級%之汲極電壓,在節點c上級之汲極電壓,在節點〇 上之級Μι之汲極電流,及節點E上之級M2之汲極電流之波 形圖。注意最後級級]^“波形A)之閘電壓之峰値較慣常設計 者爲相當的大。此一配置,開關之驅動可能爲相當的高驅 動器之操作電壓可被減低。此一減低進一步減低了送至驅 動器之直流供應電力並提高PAE。 使用顯示之型式之電路,在一 2瓦特之輸出電力上可測得 有 72%之PAE。 對於熟於此一技藝之士將瞭解發明在不違其精神及主要 特性下可能有其他特定之形式被具體實施。因之所提出揭 示之具體實施例應視爲顯示而非限制。發明之範圍應由所 附之專利申請範圍所指定者而非先前之陳述,所有在意義 上及其相等之範圍内之變動應包括在其内。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -10- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)

Claims (1)

  1. 修止
    A8 B8 弟090110740號專利申請案 中文申請專利範園修正本(91年9月) 申請專利範園 •種操#纟有-最後放大級及一在冑的驅動器放大 級之射頻放大器之方法,包含: 按開關模式來操作之驅動器放大級;及 利用一中間級網路將驅動器放大級耦合至最後放大 級,該中間級網路包含一串聯共振電路。 2·如申請專利範圍第丨項之方法,其中間級網路包含一串 聯LC電路。 3· —種操作一具有一最後放大級之射頻放大器之方法, 包含: 在驅動器放大器之前提供一驅動器放大器級;及 按開關挺式來挺作該驅動器放大級。 4· 一種射頻功率放大器,包含: 一最後放大級; 一最後放大級之前之驅動器放大級;及 一耦合至驅動器放大級及最後放大級之中間級網路 ,該中間級網路包含一串聯共振電路。 5·如申請專利範圍第4項之射頻功率放大器,其中中間級 網路包含一串聯LC電路。 6.如申請專利範圍第4項之射頻功率放大器,尚包含用於 按開關模式來操作驅動器放大級之裝置。 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐)
TW090110740A 2000-05-04 2001-05-04 RF power amplifier having high power-added efficiency TW511330B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/564,548 US7265618B1 (en) 2000-05-04 2000-05-04 RF power amplifier having high power-added efficiency

Publications (1)

Publication Number Publication Date
TW511330B true TW511330B (en) 2002-11-21

Family

ID=24254917

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090110740A TW511330B (en) 2000-05-04 2001-05-04 RF power amplifier having high power-added efficiency

Country Status (8)

Country Link
US (1) US7265618B1 (zh)
EP (1) EP1282939A2 (zh)
JP (1) JP2004518311A (zh)
KR (1) KR100831144B1 (zh)
CN (2) CN100472944C (zh)
AU (1) AU2001259408A1 (zh)
TW (1) TW511330B (zh)
WO (1) WO2001084704A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614311B2 (en) 2000-12-01 2003-09-02 Nec Compound Semiconductor Devices, Ltd. Micro-wave power amplifier

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10161743B4 (de) 2001-12-15 2004-08-05 Hüttinger Elektronik GmbH & Co. KG Hochfrequenzanregungsanordnung
US7236053B2 (en) * 2004-12-31 2007-06-26 Cree, Inc. High efficiency switch-mode power amplifier
US7199658B2 (en) * 2005-05-18 2007-04-03 International Business Machines Corporation Circuits and methods for implementing power amplifiers for millimeter wave applications
US7265619B2 (en) * 2005-07-06 2007-09-04 Raytheon Company Two stage microwave Class E power amplifier
US7583150B2 (en) 2007-03-20 2009-09-01 Viasat, Inc. Power efficient multistage amplifier and design method
JP2009094805A (ja) * 2007-10-09 2009-04-30 Sumitomo Electric Ind Ltd 増幅器
US7616000B2 (en) * 2007-11-15 2009-11-10 General Electric Company Ultra low output impedance RF power amplifier for parallel excitation
US7760018B2 (en) * 2007-12-31 2010-07-20 Tialinx, Inc. High-efficiency switching power amplifiers with low harmonic distortion
EP2164170A1 (en) * 2008-09-15 2010-03-17 Forschungsverbund Berlin E.V. Self-adjusting gate bias network for field effect transistors
KR101102128B1 (ko) * 2009-12-15 2012-01-02 서울대학교산학협력단 E 급 전력 증폭기
US8823343B2 (en) * 2009-12-22 2014-09-02 Yamaha Corporation Power amplifying circuit, DC-DC converter, peak holding circuit, and output voltage control circuit including the peak holding circuit
WO2013009640A2 (en) 2011-07-08 2013-01-17 Skyworks Solutions, Inc. Signal path termination
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
KR101767718B1 (ko) 2011-11-04 2017-08-11 스카이워크스 솔루션즈, 인코포레이티드 전력 증폭기들에 대한 장치 및 방법
US9876478B2 (en) 2011-11-04 2018-01-23 Skyworks Solutions, Inc. Apparatus and methods for wide local area network power amplifiers
CN103988424B (zh) * 2011-11-11 2017-03-08 天工方案公司 具有高功率附加效率的倒装芯片线性功率放大器
US8519791B1 (en) * 2012-03-09 2013-08-27 Texas Instruments Incorporated Free-fly class D power amplifier
KR101921686B1 (ko) 2012-06-14 2018-11-26 스카이워크스 솔루션즈, 인코포레이티드 와이어 본드 패드 및 관련된 시스템, 장치, 및 방법을 포함하는 전력 증폭기 모듈
US9367114B2 (en) 2013-03-11 2016-06-14 Intel Corporation Controlling operating voltage of a processor
JP6187444B2 (ja) * 2014-03-20 2017-08-30 株式会社村田製作所 電力増幅モジュール
US20160036392A1 (en) * 2014-07-30 2016-02-04 Qualcomm Incorporated Dual-band amplifier
JP2016163282A (ja) * 2015-03-05 2016-09-05 三菱電機株式会社 多段低雑音増幅器
US10050591B2 (en) * 2016-03-23 2018-08-14 Cree, Inc. LC network for a power amplifier with selectable impedance
US10069462B1 (en) * 2017-02-27 2018-09-04 Nxp Usa, Inc. Multiple-stage RF amplifier devices
EP3480945A1 (en) * 2017-11-06 2019-05-08 NXP USA, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10250197B1 (en) * 2017-11-06 2019-04-02 Nxp Usa, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10855235B2 (en) * 2017-12-27 2020-12-01 Murata Manufacturing Co., Ltd. Power amplifier circuit
CN109245737B (zh) * 2018-10-22 2024-05-14 东南大学 一种动态体偏置e类功率放大器
CN110708025B (zh) * 2019-09-30 2024-01-16 西安电子科技大学 利用二极管补偿电容的功率放大器
CN113792512B (zh) * 2021-08-24 2024-04-05 天津大学 一种复合型分立半导体晶体管

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3794920A (en) * 1971-09-15 1974-02-26 Westinghouse Air Brake Co Fail-safe code keying transmitter
US3919656A (en) 1973-04-23 1975-11-11 Nathan O Sokal High-efficiency tuned switching power amplifier
US4771247A (en) * 1987-09-24 1988-09-13 General Electric Company MMIC (monolithic microwave integrated circuit) low noise amplifier
US4967109A (en) * 1989-12-08 1990-10-30 General Electric Company High efficiency gate driver circuit for a high frequency converter
US5023566A (en) * 1989-12-21 1991-06-11 General Electric Company Driver for a high efficiency, high frequency Class-D power amplifier
US5818880A (en) * 1990-03-30 1998-10-06 Honeywell Inc. MMIC telemetry transmitter
JPH0454006A (ja) 1990-06-22 1992-02-21 Fujitsu Ltd 増幅装置
US5151852A (en) * 1991-03-08 1992-09-29 Raytheon Company Class E power amplifier
US5179511A (en) * 1991-10-16 1993-01-12 Illinois Institute Of Technology Self-regulating class E resonant power converter maintaining operation in a minimal loss region
US6229392B1 (en) * 1992-01-30 2001-05-08 Advanced Energy Industries, Inc. High power switch-mode radio frequency amplifier method and apparatus
JPH06260864A (ja) * 1993-03-08 1994-09-16 Matsushita Electric Ind Co Ltd 送信出力増幅器
JPH0851327A (ja) * 1994-08-08 1996-02-20 Hitachi Ltd 高周波増幅装置
KR0129844B1 (ko) * 1994-12-21 1998-10-01 양승택 아날로그 및 디지털 휴대용 전화기 겸용 전력증폭기
JP2994231B2 (ja) * 1995-06-30 1999-12-27 日本電気株式会社 半導体装置
CN1081850C (zh) 1995-09-29 2002-03-27 松下电器产业株式会社 功率放大器和通信单元
EP0854569B1 (en) * 1997-01-21 2003-04-09 Matsushita Electric Industrial Co., Ltd. High-frequency power amplifier
FR2763183A1 (fr) * 1997-05-07 1998-11-13 Philips Electronics Nv Dispositif incluant un circuit amplificateur large-bande
US6052029A (en) * 1997-06-25 2000-04-18 Sanyo Electric Co., Ltd. Stabilizing circuit and amplifier
US5939941A (en) * 1997-09-25 1999-08-17 Motorola, Inc. High efficiency power amplifier using HITFET driver circuit
US5942946A (en) * 1997-10-10 1999-08-24 Industrial Technology Research Institute RF power amplifier with high efficiency and a wide range of gain control
US6313706B1 (en) * 1997-11-27 2001-11-06 Nec Corporation Semiconductor circuit with a stabilized gain slope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614311B2 (en) 2000-12-01 2003-09-02 Nec Compound Semiconductor Devices, Ltd. Micro-wave power amplifier

Also Published As

Publication number Publication date
JP2004518311A (ja) 2004-06-17
CN1440589A (zh) 2003-09-03
US7265618B1 (en) 2007-09-04
WO2001084704A3 (en) 2002-10-03
KR20030014213A (ko) 2003-02-15
CN100472944C (zh) 2009-03-25
WO2001084704A2 (en) 2001-11-08
CN1201482C (zh) 2005-05-11
KR100831144B1 (ko) 2008-05-20
CN1702959A (zh) 2005-11-30
EP1282939A2 (en) 2003-02-12
AU2001259408A1 (en) 2001-11-12

Similar Documents

Publication Publication Date Title
TW511330B (en) RF power amplifier having high power-added efficiency
US7199658B2 (en) Circuits and methods for implementing power amplifiers for millimeter wave applications
TW511331B (en) Driving circuits for switch mode RF power amplifiers
CN101741322B (zh) 具有离散功率控制的功率放大器
EP1344315B1 (en) Class e/f switching power amplifiers
KR101079515B1 (ko) 캐스코드 스위칭 전력 증폭기 시스템 및 방법
US20070205828A1 (en) Switched mode power amplifier using lumped element impedance inverter for parallel combining
WO2011007529A1 (ja) 高周波電力増幅器
JP5362884B2 (ja) 広帯域マイクロ波増幅器
US8058927B2 (en) Amplifier modulation method and apparatus
US7619469B2 (en) Current switched circuit for switch mode power amplifiers
JP2017195536A (ja) 電力増幅モジュール
JP4184739B2 (ja) 高周波電力増幅器
TW395084B (en) A radio-frequency power amplifier with high efficiency and wide range output power control
He et al. The design of a high-efficiency mode-switching power amplifier with a parallel combining transformer for LTE application
Vuong et al. Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance
Negra et al. BiCMOS MMIC class-E power amplifier for 5 to 6 GHz wireless communication systems
Allstot et al. Optimization of CMOS RF power amplifiers
KR20020038373A (ko) 이동통신 단말기용 전력증폭장치

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees