CN1160850C - 用于开关式射频功率放大器的激励电路 - Google Patents

用于开关式射频功率放大器的激励电路 Download PDF

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CN1160850C
CN1160850C CNB008120579A CN00812057A CN1160850C CN 1160850 C CN1160850 C CN 1160850C CN B008120579 A CNB008120579 A CN B008120579A CN 00812057 A CN00812057 A CN 00812057A CN 1160850 C CN1160850 C CN 1160850C
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温德尔·桑德
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小厄尔·W·麦丘恩
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罗纳德·A·迈克
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3069—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
    • H03F3/3076—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with symmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244—Stepped control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/004—Control by varying the supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier

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Abstract

一般而言，本发明提供一种RF放大电路体系结构，该结构能够在不使匹配网络和负载网络复杂化的情况下，获得高效率。有源设备可以是双极晶体管类型或FET(场效应晶体管)类型。提供各类有源设备的简单激励电路。根据本发明的一种实施方式，单端开关式RF放大器包括一个RF输入信号；一个具有控制终端的有源设备；和一个非谐振激励电路，用于接收RF输入信号并控制应用于控制终端的信号，以便以开关模式操作有源设备。

Description

用于开关式射频功率放大器的激励电路
技术领域
本发明涉及开关式射频(RF)功率放大器的激励电路。
背景技术
在诸如蜂窝电话、寻呼机、无线调制解调器之类的无线通信设备中，非常关心电池寿命。特别地，射频传送消耗大量电源。此类功耗的作用因素是低效功率放大操作。无线通信的典型RF功率放大器的工作效率约为10％。毫无疑问，显著提高放大器效率的低成本技术将满足以上迫切需要。
另外，大部分现代数字无线通信设备靠分组来运行。亦即，以一个或多个短脉冲串的形式发送传送的信息，其中发射机只在脉冲时间期间起作用，而在所有其他时间内不起作用。因此，需要以能源有效的方式控制脉冲触发和停止的控制，以便进一步延长电池寿命。
将功率放大器划分为不同组：甲类、乙类、甲乙类等。不同种类的功率放大器通常表示不同的偏压或负载条件。在设计RF功率放大器时，通常在线性和效率之间进行折衷。不同种类的放大器操作为设计者提供平衡以上两个参数的不同方式。
一般而言，将功率放大器划分为两种不同类别；线性和非线性。线性放大器(如，甲类放大器和乙类推挽放大器)保持较高的线性度，导致在其输出端忠实再现输入信号，其原因在于输出信号与输入信号成线性比例。在非线性放大器(如，单端乙类和丙类放大器)中，输出信号不与输入信号成正比。输出信号上产生的振幅失真使得这些放大器非常适合没有振幅调制的信号(也称为恒定包络信号)。
放大器输出效率定义为RF输出功率和输入(DC)功率之间的比率。功率放大器效率低的主要原因是在晶体管中耗散的功率。甲类放大器是低效的，原因在于不管是否有输出信号，电流总是连续不断地通过设备。按照惯例，为了增加效率，通过折衷线性度而提高效率。例如，在乙类放大器中，选择偏压条件以至在一半周期内切断输出信号，除非第二晶体管提供另一半(推挽)。因此，波形的线性度更低。通过使用储能电路或其他过滤器过滤较高和较低频率部分，仍能使输出波形为正弦波形。
丙类放大器在不足50％的周期内导通，以便进一步提高效率；即，如果输出电流的导通角小于180度，则该放大器称为丙类放大器。以上操作模式的效率大于甲类或乙类放大器的效率，但通常其失真大于甲类或乙类放大器。在丙类放大器的情况中，当改变输入振幅时，输出振幅仍然有变化。其原因在于丙类放大器起受控电流源作用—即使是一个短暂的电流源—而不是一个开关。
其他种类的放大器通过仅仅使用晶体管作为开关，有利解决晶体管内的功率耗散。此类放大器的基本原理在于，理论上开关不消耗电源，因为或者零电压或者零电流通过。因为开关的V-I乘积总是零，所以(理论上)该设备中没有耗散。戊类功率放大器使用一个晶体管，相反，丁类功率放大器使用两个晶体管。
然而，实际上，开关并不完美。(开关具有开/关时间和接通电阻。)有关耗散降低效率。因此，现有技术一直寻找修改所谓“开关式”放大器(其中激励晶体管作为符合操作频率的开关，以便在晶体管导通电流时将耗散的功率降到最低程度)方法，以致在瞬间转换的非零时间间隔内开关电压为零，从而降低功率耗散。戊类放大器使用电抗输出网络，后者提供对开关电压进行整形的足够自由度，以便在开关接通时具有零值和零斜度，从而降低开关损耗。己类放大器是更进一步种类的开关式放大器。己类放大器生成比普通正弦波更方的输出波形。通过鼓励在输出网络中生成齐阶谐波(即，x3、x5、x7等)并抑制生成偶阶谐波(即，x2、x4等)，实现输出波形的“方脉冲形成”。
图1表示美国专利3,919,656中说明的已知戊类功率放大器的示例，本文引用作为参考。通过导线1将RF输入信号连接到激励器级2，后者经由通过导线3连接的信号控制有源设备5。实质上，当激励器2适当激励时，有源设备5作为一个开关。因此，将有源设备的输出端口表示为一个单刀单掷开关6。通过开关6串联组合DC电源7和负载网络9的输入端口。将负载网络9的输出端口连接到负载11。当按照所需的AC输出频率循环操作开关6时，以开关频度(以及其谐波)，将电源7的DC能量转换为AC能量。
尽管图1的结构能够实现高转换效率，但具有以下缺点，由于阻尼振荡而在有源设备的输出端出现较大的电压摆动。通常超过电源电压3倍的较大电压摆动，妨碍与某些具有低击穿电压的有源设备一起使用戊类电路。
另外，以上RF放大器中的激励电路通常包括由调谐(谐振)电路组成的匹配网络。参照图2，在此类结构中，将RF输入信号连接到激励放大器，通常为甲类操作。通过匹配网络，将激励放大器的输出信号连接到开关晶体管(在图2中表示为FET)的控制终端。如同图1所示的负载网络的设计一样，正确设计匹配网络并不是一件易事。
发明内容
一般而言，本发明提供一种RF放大电路体系结构，该结构能够在不使匹配网络和负载网络复杂化的情况下，获得高效率。有源设备可以是双极晶体管类型或FET(场效应晶体管)类型。提供各类有源设备的简单激励电路。根据本发明的一种实施方式，单端开关式RF放大器包括一个RF输入信号；一个具有控制终端的有源设备；和一个非谐振激励电路，用于接收RF输入信号并控制应用于控制终端的信号，以便以开关模式操作有源设备。
附图说明
通过连同附图阅读以下说明，将更加理解本发明。其中附图为：
图1是已知单端开关式RF放大器的简化框图；
图2是已知RF放大器的一部分的示意图；
图3是根据本发明的RF开关式放大器的框图；
图4是根据本发明之某一实施方式的RF开关式放大器的一部分的示意图；
图5是图4的RF开关式放大器中使用的合适负载网络的示意图；
图6是一种波形，表示图4的RF开关式放大器的输入电压和有关波形；
图7是一种波形，表示图4的开关晶体管的基极和集电极电流波形；
图8是一种波形，表示图4的RF开关式放大器的输出电压；
图9是根据本发明之另一种实施方式的RF开关式放大器的一部分的示意图；
图10是一种波形，表示图9的RF开关式放大器的输入电压和有关波形；
图11是一种波形，表示图9的激励晶体管的集电极电流波形；以及
图12是一种波形，表示图9的开关晶体管的栅极电压波形。
具体实施方式
参照图3，该图表示根据本发明之最佳实施方式的RF开关式放大器的框图。将RF输入信号应用于非电抗激励电路。将激励电路连接到有源设备，以激励有源设备开关。将有源设备开关连接到负载网络，后者生成应用于负载(如，天线)的RF输出信号。最好通过串联组合开关式电源和线性调节器实现的快速时变电源，将电源应用于有源设备开关，以便改变有源设备开关的操作电压。通过以可控方式改变操作电压，可以按上述方式实现功率控制、脉冲串控制和调制。
有源设备开关可以为双极晶体管或FET晶体管。参照图4，该图为RF开关式放大器的一部分的示意图，其中有源设备开关为具有集电极、发射极和基极引出端的双极晶体管。通过RF扼流圈L，将双极晶体管N1的集电极连接到操作电压VPA，并且连接到输出网络。将双极晶体管N1的发射极连接到电路(AC)接地。
以达林顿方式将双极晶体管N1的基极连接到另一个双极晶体管N2(激励晶体管)的发射极。将激励晶体管N2的集电极连接到操作电压VDRIVER，并且连接到旁路电容。与激励晶体管N2关联的是一个偏压网络，在所示实施方式中，该网络包括三个电阻，R1、R2和R3。将电阻R1从激励晶体管的发射极连接到电路接地。将电阻R2从激励晶体管的基极连接到接地。将电阻R3从激励晶体管N2的基极连接到VDRIVER。通过DC隔离电容Cin，将RF输入信号应用于激励晶体管的基极。
参照图5，输出网络可以采取阻抗匹配传输线TL和电容Cout的形式。
正如图6的波形1所示，RF输入电压信号为正弦波。如波形2所示，向上水平移动输入电压，以生成激励晶体管N2的基极的电压。如波形3所示，激励晶体管N2的发射极电压下降一个Vbe，并且应用于开关晶体管N1的基极。在正半周期开始时，激励晶体管N2作为发射极输出放大器，其输出(发射)电压远远低于开关晶体管N1的接通电压，因此开关晶体管N1断开。如图7所示，当信号增加时，激励晶体管N2接通开关晶体管N1，并使其饱和。如图8所示，电流通过RF扼流圈L和开关晶体管N1，并且当电容Cout放电时，输出电压降低。当接近正半周期的末端时，激励晶体管N2的输出电压降到开关晶体管N1的接通电压以下，从而允许其断开。选择电阻R1的值以至开关晶体管N1快速断开。电流继续通过RF扼流圈L，对电容Cout充电，并使输出电压提高。
参照图9，该图为RF开关式放大器的一部分的示意图，其中有源设备开关为具有漏极、源极和栅极引出线的FET晶体管(MESFET、JFET、PHEMT等)。通过RF扼流圈L1，将FET晶体管M1的漏极连接到操作电压VPA，同时连接到输出网络。将FET晶体管的源极连接到电路(AC)接地。
通过一个大值电阻R1，从电源-VB偏压FET晶体管的栅极，并且通过一个DC隔离电容C1，将其连接到以推挽结构连接的一对双极晶体管(激励晶体管)。激励晶体管包括一个NPN晶体管N1和一个PNP晶体管P1。将NPN激励晶体管N1的集电极连接到操作电压VCC，同时连接到旁路电容。将PNP激励晶体管的集电极连接到负参考电压-VB，同时连接到旁路电容。以公用方式连接激励晶体管的基极。大值电阻R2和R3连接各电源干线的公共节点。
以公用基极配置方式连接NPN双极晶体管N2。通过电阻R4，将双极晶体管的发射极连接到-VB，并且通过电容C3将其连接到RF输入信号。通过电感L2，将双极晶体管的集电极连接到VCC，同时连接到旁路电容。
参照图10，该图表示图9的电路的输入电压波形1-4。将输入电压1向下水平移动一个Vbe(生成电压2)，然后应用于双极晶体管N2的发射极。利用电感L2的影响，在双极晶体管N2集电极生成一个大电压摆动3。向下水平移动以上电压摆动，以生成电压4，将电压4应用于节点N的激励晶体管的基极。操作中，在正半周期期间，最初断开双极晶体管N2。电流通过电感L2进入与晶体管对的基极相连的电容C2，从而使得NPN晶体管N1接通，并使得PNP晶体管P1断开(图11)。从VCC电源对DC隔离电容C1充电，从而增加FET M1的栅极势能，使其接通(图12)。在负半周期期间，接通双极晶体管N2。电流通过电感L2，通过晶体管N2，到达-VB干线。电流流出PNP晶体管P1的基极，接通该晶体管。DC隔离电容C1放电，从而降低FET M1的栅极势能，使其断开。输出网络按照上述相同方式运行。
一般技术人员可以理解，可以以其他特定方式体现本发明而并不背离其实质和本质特征。因此，无论从那一点来看，所公开的实施方式都是说明性的，而不是限制性的。由附属权利要求书而不是由上述说明定义本发明的范围，并且权利要求书包含其等价含义和范围内的所有更改。

Claims (9)

1.一种单端开关式RF放大器，包括：
一个RF输入信号；
双极开关晶体管，具有集电极、基极和发射极；以及
一个激励电路，用于接收RF输入信号并控制加到控制终端的信号，以便以开关方式操作双极开关晶体管，该激励电路包含：
双极激励晶体管，具有集电极、基极和发射极，将双极激励晶体管的发射极连接到双极开关晶体管的基极；和
无源电抗元件，从双极激励晶体管的发射极连接到固定电压。
2.权利要求1的装置，其中将RF输入信号连接到双极激励晶体管的基极。
3.权利要求2的装置，其中通过DC隔离电容，将RF输入信号连接到双极激励晶体管的基极。
4.一种单端开关式RF放大器，包括：
一个RF输入信号；
一个FET开关晶体管，具有漏极、源极和栅极；以及
一个激励电路，用于接收RF输入信号并控制加到控制终端的信号，以便以开关方式操作有源器件，该激励电路包含：
一对双极激励晶体管，每个晶体管具有一个集电极、一个基极和一个发射极，并且以推挽结构连接，双极激励晶体管的发射极连接到FET开关晶体管的栅极；和
另一双极晶体管，具有集电极、基极和发射极，该另一双极晶体管以共用基极配置方式配置，该另一双极晶体管的集电极连接到双极晶体管对的基极。
5.权利要求4的装置，通过一个电抗元件，将操作电压加到FET开关晶体管；并且还包括改变操作电压以控制RF输出功率的装置。
6.权利要求4的装置，其中将RF输入信号连接到所述另一双极晶体管的发射极。
7.权利要求6的装置，其中通过DC隔离电容，将RF输入信号连接到所述另一双极晶体管的发射极。
8.权利要求6的装置，其中通过一个电感，将所述另一双极晶体管的集电极连接到操作电压。
9.权利要求1的装置，其中通过一个电抗元件，将操作电压加到双极晶体管；并且还包括改变操作电压以控制RF输出功率的装置。
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