TW511331B - Driving circuits for switch mode RF power amplifiers - Google Patents

Driving circuits for switch mode RF power amplifiers Download PDF

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Publication number
TW511331B
TW511331B TW089123483A TW89123483A TW511331B TW 511331 B TW511331 B TW 511331B TW 089123483 A TW089123483 A TW 089123483A TW 89123483 A TW89123483 A TW 89123483A TW 511331 B TW511331 B TW 511331B
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Taiwan
Prior art keywords
transistor
bipolar
amplifier
patent application
switching mode
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TW089123483A
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English (en)
Inventor
Wendell B Sander
Earl W Mccune
Ronald A Meck
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Tropian Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3069—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
    • H03F3/3076—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with symmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244—Stepped control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/004—Control by varying the supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Description

經濟部智慧財產局員工消費合作社印製 五、發明說明（1 ) 發明之背景 1. 發明之領域 關，發明與用於切換模式射頻功率放大器之驅動電路有 2. 技術水準 笔池之奇命對諸·如行動電話、呼叫、 二 等無線電通信裝置而言是主要之:、…周交解调器 ^ 疋王要芡關鍵。此等裝置耗電之促 疋功率放大㈣業效率不夠。—個料無線電通信 爾射頻功率放大器僅以大約1〇%之效率操作。 以大爲增加放大器效率之低成本技術會滿足這方面= 需要。 此外’多數凋變解調器數位無線電通信裝置均以包封 式操作，亦即發射之資訊是以—系列之-個或多個短叢 出而發射機僅在叢之時間中工作但在其他時間均不工作 所以最好對叢之賦能去除能以能量效益之方式加以控制 如此更能延長電池壽命。 功率放大器可分爲不同種類：Α類、_ ' αβ類等。 ::類功率放大器通常表示不同之偏壓或負載狀況。在 :頻功率放大器時’通常在線性與效率之間要加以 ^不同種類之放大器操作可給予設計者來平衡這兩個數之途徑。 、'來功率放大器分爲兩種，即線性與非線性。 f放大器（例如Α類放大器與Β類推挽式放大器）保持 線性而在其輸出上有對輸入信號忠實之重製，此是因 方發 不設權參 線 南度 爲輸 {請先閱讀背面之注意事項i寫本頁) 裝 _ 線· k紙·度適用中規格(21〇 χ 297公釐） A7
五、發明說明（3 )· 開關之^乘積總是零，理想上不會耗電。E類功率 用早-電晶體與使用兩個電晶體之0類功率放大器成 但事實上㈣並不理想（„有打開與關掉之時間 閉合電阻）。相關之耗散亦會減低效率。所以先前之技術 尋求修改所謂之「切換模式J放大器（其中之電晶體❹ 做-個在作業頻率上之開關而當電晶體導電時將功率耗散 減至最小使得在切換瞬時之非零時間間隔中開關之電 零，因而減少功率耗散。£類放大器使用_個無功輸出網 路提供足夠程度之自由使切換電壓在開關接通時爲零値盘 零斜坡，從而減小切換損失。％放大器爲另一種切換模 式放大器能產生較通常之正弦波更方正之輸出波形。此一 輸出波形（「更方正J是由於在輸出網路中鼓勵產生奇數 亦即x3'x5、x7等)而抑制偶數諸波(亦即x2、x4 圖1所π馬美國第3,919,656號專利中所述之已知E類功 率放大器之舉例，特列此參考：射頻輸入信號被核合至引 線1而至驅動器2，後者透過輕合在引線3上之信號控制主 動裝置5。主動裝置5當被驅動器2適當驅動時即成爲一個 開關。所以主動裝置之輸出璋是一單極單投開關6。開關 6上連接的是直流電源供應器7之串聯組合與負荷網路9之 輸阜負荷網路9之輸出埠連接至負荷1 1。因開關6是 週』f生作業於所需之交流輸出頻率上，電源供應器7之直 /瓜迅被轉變爲切換頻率之交流電（連同其諧波 五、發明說明（4 圖t中 < 文排雖能達到高轉變效率但有在主動裝置輸出 =因、=振鈴而發生大幅度電壓擺動之缺點。此一超過供應 弘壓一倍心大幅度電壓擺動使得無法將E類電路用於某些 崩潰電壓低之主動裝置。 一 至 再者，該射頻放大器中之驅動電路包括一個含有調諧 (:皆振)電路之匹配網路。參看圖2中之安排，射頻輸入信 “皮^合至驅動器放大器2 0 3，此爲-標準之A類操 乍驅動备放大器之輸出信號透過匹配網路2 〇 $被耦合 切換電晶體207 (圖2所示爲一場效電晶體）之控制接頭 浚同圖1中負荷網路之設計，適當設計匹配路並非易事 本發明之簡要説明 效 雙 本發明一般言來是提供一種射頻放大器電路能達到高 率且避免複雜之匹配網路與負荷網路。其主動裝置可爲 極電晶體型或場效電晶體型。每—型之主動裝置均備有— :單驅動電路。按照本發明之一個實例，一個單端切換模 式射頻放大器包括一射頻輸入信號、一個具有控制接頭之 王動裝置及-個非諧振驅動電路用以接收該射頻信號並於 制加至控制接頭之信號而以切換模式來操作主動裝置。 經濟部智慧財產局員工消費合作社印制衣 附圖簡單説明 k下面之説明中並參看附圖會對本發明更爲明瞭： 圖1馬已知單端切換模式射頻放大器之簡化方塊圖； 圖2爲已知射頻放大器一部分之略圖； 圖3爲本發明射頻切換模式放大器之方塊圖； 圖4爲本發明一個實例中射頻切換模式放大器一部分 511331 A7 B7 五、發明說明（5 略圖 經濟部智慧財產局員工消費合作社印制农 圖5爲用於圖4射頻切換模式放大器中負荷網路之略 圖； 圖6爲用於圖4射頻切換模式放大器輸入電壓與相關波 形之波形圖； 圖7爲圖4切換電晶體基極與集極電流之波形圖； 圖8爲圖4射頻切換模式放大器輸出電壓波形圖，· 圖9爲本發明另一實例射頻切換模式放大器_部分之略 圖； 圖1 0爲圖9射頻切換模式放大器輸入電壓及相關波形 波形圖； 圖1 1爲圖9驅動電晶體集極電流之波形圖，·及 圖1 2爲圖9切換電晶體閘電壓之波形圖。 較佳實例之詳細説明 參看圖3，其中所示爲本發明射頻切換模式放大器較佳 貝U之方塊圖。射頻輸入4號3 0 1被加至驅動電路3 3， 銥弘路可爲一非無功驅動電路。驅動電路被耦合至一主動裝置開關305來驅動該主動裝置開關。主動裝置開關被耦 合至負荷網路3 0 7。該網路產生一射頻輸出信號用以加 例如爲一天線之負荷（未示出）。電源最好是透過一個由換模f電源供應器與線性調節器串聯组合之快速可變電 仏應UU 3 0 9而使主動裝置開關之作業電壓能夠變換。以 制方式變換作業電壓即可達到前述之電力控制、短叢控 及調變。 之 至 切 源 控 制 --------------- (請先閱讀背面之注意事頊^^寫本頁) ‘線· 本紙張尺度翻巾目目家標準（CNS)A4祕 * 8 511331 第089123483號專利申請案 中文說明書修正頁(91年8月） A7 B7
五、發明説明（6 ) 主動裝置可為雙極電晶體或場效電晶體。參看圖4之射 頻切換模式放大器一部分之略圖，其中之主動裝置開關為 雙極電晶體N 1 5該電晶體有集極、射極與基極接頭。雙 極電晶體N 1之集極是透過一射頻抗流圈L連接至作業電壓 VPA並且連接至輸出網路40 1。雙極電晶體N 1之射極是連 接至電路（交流）之通地。 雙極電晶體N 1之基極以Darlington方式連接另一個雙極 電晶體N2 (驅動器電晶體）之射極。驅動器電晶體N2之集 極連接至作業電壓VDRIVER並且連接至旁通電容器。與驅動 器電晶體N2相關的有包括三個電阻器Rl、R2、R3之偏 壓網路。電阻器R 1從驅動器電晶體之射極連接至電路之 通地。電阻器R2從驅動器電晶體之基極連接至地。電阻 器R 3從驅動器電晶體N 2之基極連接至VDRIVER。射頻輸入 信號透過直流隔離電容器Cin加至驅動器電晶體之基極。 參看圖5，輸出網路可為阻抗匹配傳輸線5 0 1與一電容 器C—之形式。 射頻輸入電壓信號為圖6波形6 -1所示之正弦波。輸入電 壓如波形6-2所示為向上移位而在驅動器電晶體N2之基極 產生一電壓。驅動器電晶體N2之射極電壓如波形6-3所示 下降一個Vbe而加至切換電晶體N1之基極。在正半週開始 時，驅動器電晶體N2之操作如同一射極跟隨器，其輸出（射 極）電壓低於切換電晶體N 1之接通電壓而使切換電晶體N 1 截止。如圖7所示在信號增大時驅動器電晶體N2將切換電晶 體N 1接通並將其驅動至飽和。如圖8所示，電流流過射頻 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 511331 第089123483號專利申請案 中文說明書修正頁(91年8月） A7 B7 五、發明説明（7 抗流圈L及切換電晶體N 1而在電容器(:咖放電後輸出電壓 下降。在正半週快要結束時，驅動器電晶體N 2之輸出電 壓降至切換電晶體N 1之接通電壓以下而將N 1關掉。電阻 器R 1之值是選在使得切換電晶體N 1快速截止。電流繼續 流過抗流圈L而使電容器Cg充電並使得輸出電壓上升。 參看圖9所示之射頻切換模式放大器一部分之略圖，其 中之主動裝置開關為一場效電晶體Μ 1 (金屬半導體場效電 晶體、結型場效電晶體等）具有吸極、源極與閘接頭。場 效電晶體Μ 1之吸極透過射頻抗流圈L 1連接至作業電壓 VPA也連接至輸出網路9 0 1。該場效電晶體之源極連接至 電路（父流）通地。 場效電晶體之閘透過一大值之電阻器R 1被加以偏壓而從 電源-VB經由直流隔斷電容器C 1連接至一對推挽式安排之 雙極電晶體（驅動器電晶體）。驅動器電晶體包括一個NPN 電晶體N 1與一個P N P電晶體P 1。N P N驅動器電晶體N 1 之集極連接至作業電壓Vcc也連接至一旁通電容器。PNP 驅動器電晶體P 1之集極連接至負參考電壓-VB也連接至一 旁通電容器。各驅動器電晶體之基極連接在一起。大值之 電阻器R 2與R 3將共同波節連接至各電源供應軌。 另一 NPN雙極電晶體N2以共同基極之構形連接。該另 一雙極電晶體之射極透過電阻器R4連接至-VB並且透過電 容器C 3連接至射頻輸入信號。該另一雙極電晶體之集極 透過電感器L2連接至Vcc並且連接至一旁通電容器。 參看圖10所示圖9電路之輸入電壓波形10-1〜10-4。輸入電壓1 10 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 511331 A7 B7 五、發明說明（8 ) 被向下位移一個Vbe而加至雙極電晶體N2之射極。藉電感 器L2之作用在雙極電晶體N2之集極產生一大的電壓擺動 3。此一電壓擺動向下位移而在波節N處產生加至驅動電 晶基極之電壓4。在作業上，當正半週時該另一個雙極電 晶體N 2開始時是關掉狀態。電流流過電感器L 2而進入耦 合至該對電晶體基極之電容器C 2時，使得N P N電晶體N 1 接通而將PNP電晶體P 1關掉（圖1 1 )。直流隔斷電容器C 1 從電源V c c充電而外向場效電晶體Μ 1之電位並促使其接通 (圖1 2 )。在負半週時，雙極電晶體Ν 2被接通。電流流過 電感斋L2及電晶體Ν2而至Vb軌。電流亦流出ΡΝΡ電晶體 P 1之基極而將其接通。直流隔斷電容器C 1放電而降低場 效電體Μ 1之閘電位並將其關掉。輸出網路之操作與前述 之方式相同。 對此項技術有一般常識者即會知道在不脱離本發明實質 精神情形下仍可有其他形式之實例。所以在此舉出之實例 僅爲説明並非限制。本發明之範圍應以所附之申請專利範 圍爲準而非以上面之説明爲準。在同樣意義與範圍内之改 變仍認爲包括在本規格式内。 請 先 閱 讀 背 面 之 注 意 事 項 頁 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 511331 第089123483號專利申請案 中文說明書修正頁(91年8月） A7 B7 五、發明説明（8a )
圖式元件符號說明 1 引線 309 2 驅動器 401 3 引線 501 5 主動裝置 901 6 單極單投開關 6-1 波形 6-2 波形 6-3 波形 7 直流電源供應器 9 負荷網路 10-1 波形 10-2 波形 10-3 波形 10-4 波形 11 負荷 201 射頻輸入信號 203 驅動器放大器 205 匹配網路 207 場效電晶體 301 射頻輸入信號 303 驅動電路 305 主動裝置開關 307 負荷網路 快速可變電源供應器 輸出網路 阻抗匹配傳輸線 輸出網路 -11a- 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐）

Claims (1)

  1. 511331 第089123483號專利申請案 中i申請專利範圍修正本(91年8月) A BCD
    修補 '^
    六、申請專利範圍 1 . 一種單端切換模式射頻放大器，包括： 一射頻輸入信號； 一雙極切換電晶體，具有一集極、一基極與一射極； 及 一驅動電路，用以接收射頻输入信號，並控制施加至 控制端子之信號俾以切換模式操作該雙極切換電晶體， 包含有： 一雙極驅動器電晶體，具有一集極、一基極與一射 極，該雙極驅動器電晶體之射極連接至雙極切換電晶體 之基極；及 一被動阻抗元件’從該雙極驅動器電晶體之射極搞 合至一固定電位。 2. 如申請專利範圍第1項之單端切換模式射頻放大器，其 中之射頻輸入信號被耦合至雙極驅動器電晶體之基極。 3. 如申請專利範圍第2項之單端切換模式射頻放大器，其 中之射頻輸入信號是透過一直流隔斷電容器耦合至雙極 驅動器電晶體之基極。 4. 一種單端切換模式射頻放大器，包括： 一射頻輸入信號； 一場效切換電晶體，具有一汲極、一源極與一閘極； 及 一驅動電路，用以接收射頻輸入信號，並控制施加至 控制端子之信號俾以切換模式操作該主動裝置，包含 有： -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐） 511331 A8 第089123483號專利申請案 g 中艾申諸春利範圍倏正本(91年8月） D8_ 六、申請專利範圍 一對雙極驅動器電晶體，每個均有一集極、一基極 與一射極且是以推挽方式連接，該等雙極驅動電晶體 之射極連接至場效切換電晶體之閘極；及 一另一雙極電晶體，具有一集極、一基極與一射 極，該另一雙極電晶體係以共同基極之構態連接，該 另一雙極電晶體之集極連接至該對雙極驅動器電晶體 之基極。 5 ·如申請專利範圍第4項之單端切換模式射頻放大器，其 中一工作電壓透過一電抗元件施加至該場效切換電晶 體，另包含有變動工作電壓以控制射頻輸出功率之裝 置。 6. 如申請專利範圍第4項之單端切換模式射頻放大器，其 中之射頻輸入信號耦合至另一個雙極電晶體之射極。 7. 如申請專利範圍第6項之單端切換模式射頻放大器，其 中之射頻輸入信號是透過一直流隔斷電容器耦合至該另 一個雙極電晶體之射極。 8. 如申請專利範圍第6項之單端切換模式射頻放大器，其 中該另一個雙極電晶體之集極是透過一電感器耦合至一 工作電位。 9 ·如申請專利範圍第1項之單端切換模式射頻放大器，其 中一工作電壓透過一電抗元件施加至該雙極切換電晶 體，另包含有變動工作電壓以控制射頻輸出功率之裝 置。 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂 #
TW089123483A 1999-07-29 2000-11-07 Driving circuits for switch mode RF power amplifiers TW511331B (en)

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