CN1400664A - 交叉点阵列中存储单元的隔离 - Google Patents

交叉点阵列中存储单元的隔离 Download PDF

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Publication number
CN1400664A
CN1400664A CN02127076A CN02127076A CN1400664A CN 1400664 A CN1400664 A CN 1400664A CN 02127076 A CN02127076 A CN 02127076A CN 02127076 A CN02127076 A CN 02127076A CN 1400664 A CN1400664 A CN 1400664A
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CN
China
Prior art keywords
memory cell
gate oxide
memory
tunnel junction
pillar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02127076A
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English (en)
Chinese (zh)
Inventor
F·A·佩尔纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1400664A publication Critical patent/CN1400664A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

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  • Semiconductor Memories (AREA)
CN02127076A 2001-07-26 2002-07-26 交叉点阵列中存储单元的隔离 Pending CN1400664A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/912565 2001-07-26
US09/912,565 US6462388B1 (en) 2001-07-26 2001-07-26 Isolation of memory cells in cross point arrays

Publications (1)

Publication Number Publication Date
CN1400664A true CN1400664A (zh) 2003-03-05

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ID=25432127

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02127076A Pending CN1400664A (zh) 2001-07-26 2002-07-26 交叉点阵列中存储单元的隔离

Country Status (7)

Country Link
US (1) US6462388B1 (https=)
EP (1) EP1280209B1 (https=)
JP (1) JP4316197B2 (https=)
KR (1) KR100890018B1 (https=)
CN (1) CN1400664A (https=)
DE (1) DE60238812D1 (https=)
TW (1) TW548836B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101432925A (zh) * 2004-10-12 2009-05-13 盖伊·西尔弗 适合与自然击穿器件联合使用的电磁整流天线

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740944B1 (en) * 2001-07-05 2004-05-25 Altera Corporation Dual-oxide transistors for the improvement of reliability and off-state leakage
US6982901B1 (en) * 2003-01-31 2006-01-03 Hewlett-Packard Development Company, L.P. Memory device and method of use
US7132350B2 (en) * 2003-07-21 2006-11-07 Macronix International Co., Ltd. Method for manufacturing a programmable eraseless memory
US20050035429A1 (en) * 2003-08-15 2005-02-17 Yeh Chih Chieh Programmable eraseless memory
JP5015420B2 (ja) * 2003-08-15 2012-08-29 旺宏電子股▲ふん▼有限公司 プログラマブル消去不要メモリに対するプログラミング方法
US7002197B2 (en) * 2004-01-23 2006-02-21 Hewlett-Packard Development Company, L.P. Cross point resistive memory array
KR100809724B1 (ko) * 2007-03-02 2008-03-06 삼성전자주식회사 터널링층을 구비한 바이폴라 스위칭 타입의 비휘발성메모리소자
US7846782B2 (en) * 2007-09-28 2010-12-07 Sandisk 3D Llc Diode array and method of making thereof
US7858506B2 (en) * 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
US8514637B2 (en) * 2009-07-13 2013-08-20 Seagate Technology Llc Systems and methods of cell selection in three-dimensional cross-point array memory devices

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910001075B1 (ko) * 1988-08-30 1991-02-23 안종운 콘크리트 제조용 믹서기의 바켓트 장치
US5051796A (en) * 1988-11-10 1991-09-24 Texas Instruments Incorporated Cross-point contact-free array with a high-density floating-gate structure
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JP3254072B2 (ja) 1994-02-15 2002-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5446299A (en) * 1994-04-29 1995-08-29 International Business Machines Corporation Semiconductor random access memory cell on silicon-on-insulator with dual control gates
US5455791A (en) * 1994-06-01 1995-10-03 Zaleski; Andrzei Method for erasing data in EEPROM devices on SOI substrates and device therefor
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5693955A (en) 1996-03-29 1997-12-02 Motorola Tunnel transistor
US5714777A (en) * 1997-02-19 1998-02-03 International Business Machines Corporation Si/SiGe vertical junction field effect transistor
US5838608A (en) 1997-06-16 1998-11-17 Motorola, Inc. Multi-layer magnetic random access memory and method for fabricating thereof
US5991193A (en) 1997-12-02 1999-11-23 International Business Machines Corporation Voltage biasing for magnetic ram with magnetic tunnel memory cells
US6180444B1 (en) 1998-02-18 2001-01-30 International Business Machines Corporation Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same
US6097625A (en) 1998-07-16 2000-08-01 International Business Machines Corporation Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes
US5940319A (en) 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6165803A (en) 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101432925A (zh) * 2004-10-12 2009-05-13 盖伊·西尔弗 适合与自然击穿器件联合使用的电磁整流天线

Also Published As

Publication number Publication date
KR20030010522A (ko) 2003-02-05
EP1280209A2 (en) 2003-01-29
US6462388B1 (en) 2002-10-08
EP1280209B1 (en) 2011-01-05
EP1280209A3 (en) 2004-05-12
JP2003110093A (ja) 2003-04-11
DE60238812D1 (de) 2011-02-17
KR100890018B1 (ko) 2009-03-25
JP4316197B2 (ja) 2009-08-19
TW548836B (en) 2003-08-21

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