CN1334965A - 模拟开关 - Google Patents
模拟开关 Download PDFInfo
- Publication number
- CN1334965A CN1334965A CN99816073A CN99816073A CN1334965A CN 1334965 A CN1334965 A CN 1334965A CN 99816073 A CN99816073 A CN 99816073A CN 99816073 A CN99816073 A CN 99816073A CN 1334965 A CN1334965 A CN 1334965A
- Authority
- CN
- China
- Prior art keywords
- collector electrode
- emitter
- transistor
- collector
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002457 bidirectional effect Effects 0.000 claims abstract description 3
- 238000002955 isolation Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Bipolar Transistors (AREA)
- Control Of Eletrric Generators (AREA)
- Circuit For Audible Band Transducer (AREA)
- Electrophonic Musical Instruments (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9826877A GB2344689A (en) | 1998-12-07 | 1998-12-07 | Analogue switch |
GB9826877.4 | 1998-12-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1334965A true CN1334965A (zh) | 2002-02-06 |
CN1161840C CN1161840C (zh) | 2004-08-11 |
Family
ID=10843771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998160733A Expired - Fee Related CN1161840C (zh) | 1998-12-07 | 1999-11-29 | 模拟开关 |
Country Status (12)
Country | Link |
---|---|
US (1) | US6426667B1 (zh) |
EP (1) | EP1147558B1 (zh) |
JP (1) | JP4838421B2 (zh) |
KR (1) | KR20010080699A (zh) |
CN (1) | CN1161840C (zh) |
AT (1) | ATE463047T1 (zh) |
AU (1) | AU1387500A (zh) |
CA (1) | CA2354522A1 (zh) |
DE (1) | DE69942209D1 (zh) |
GB (1) | GB2344689A (zh) |
TW (1) | TW457702B (zh) |
WO (1) | WO2000035017A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU5401499A (en) * | 1999-10-14 | 2001-04-26 | Alcatel | ADSL filter |
EP1366378A4 (en) | 2001-01-31 | 2005-11-09 | Omniguide Comm Inc | ELECTROMAGNETIC MODENE CONVERSION IN PHOTONIC CRYSTAL MULTI-MODEL WAVEGUIDE |
US20090001517A1 (en) * | 2007-06-27 | 2009-01-01 | Leland Scott Swanson | Thermally enhanced semiconductor devices |
EP2091122A1 (en) * | 2008-02-14 | 2009-08-19 | Vlaamse Instelling Voor Technologisch Onderzoek (Vito) | Overvoltage protection circuit |
JP5714475B2 (ja) | 2011-12-08 | 2015-05-07 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 増幅装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3733441A (en) * | 1971-06-14 | 1973-05-15 | Electro Voice | Ambipolar microphone unit |
JPS548452A (en) * | 1977-06-22 | 1979-01-22 | Fujitsu Ltd | Analog gate circuit |
US4201957A (en) * | 1977-09-21 | 1980-05-06 | Qualidyne Systems, Inc. | Power inverter having parallel switching elements |
US4255782A (en) * | 1977-11-15 | 1981-03-10 | Jgf, Incorporated | Electrical energy conversion systems |
US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
US4232328A (en) * | 1978-12-20 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
JPS55159630A (en) * | 1979-05-30 | 1980-12-11 | Mitsubishi Electric Corp | Analog switch |
JPS56102124A (en) * | 1980-01-18 | 1981-08-15 | Victor Co Of Japan Ltd | Electronic switch circuit |
JPS5753944A (en) | 1980-09-17 | 1982-03-31 | Hitachi Ltd | Semiconductor integrated circuit |
US4572967A (en) * | 1982-09-07 | 1986-02-25 | Tektronix, Inc. | Bipolar analog switch |
JPS6141211A (ja) * | 1984-08-01 | 1986-02-27 | Hiroshi Nakamura | 非直線出力補償回路 |
JPS61274421A (ja) * | 1985-05-29 | 1986-12-04 | Hitachi Ltd | アナログスイツチ |
JPH02180899A (ja) | 1988-12-31 | 1990-07-13 | Tosoh Corp | 免疫グロブリンの精製方法 |
EP0377871A3 (en) | 1989-01-09 | 1991-03-27 | Texas Instruments Incorporated | Self-aligned window at recessed intersection of insulating regions |
JPH02268463A (ja) | 1989-04-10 | 1990-11-02 | Toshiba Corp | 複合型半導体素子 |
JP2715665B2 (ja) | 1989-12-20 | 1998-02-18 | 日本電気株式会社 | 半導体装置 |
US5241211A (en) | 1989-12-20 | 1993-08-31 | Nec Corporation | Semiconductor device |
EP0465961B1 (en) | 1990-07-09 | 1995-08-09 | Sony Corporation | Semiconductor device on a dielectric isolated substrate |
US5256896A (en) * | 1991-08-30 | 1993-10-26 | International Business Machines Corporation | Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor |
JP3798808B2 (ja) * | 1991-09-27 | 2006-07-19 | ハリス・コーポレーション | 高いアーリー電壓,高周波性能及び高降伏電壓特性を具備した相補型バイポーラトランジスター及びその製造方法 |
JP2764776B2 (ja) * | 1991-11-07 | 1998-06-11 | セイコーインスツルメンツ株式会社 | バイポーラ型フォトトランジスタ装置。 |
EP0617840A1 (en) | 1991-12-20 | 1994-10-05 | Harris Corporation | Negative biasing of isolation trench fill to attract mobile positive ions away from bipolar device regions |
JP3818673B2 (ja) * | 1993-03-10 | 2006-09-06 | 株式会社デンソー | 半導体装置 |
US5387540A (en) | 1993-09-30 | 1995-02-07 | Motorola Inc. | Method of forming trench isolation structure in an integrated circuit |
KR0120572B1 (ko) | 1994-05-04 | 1997-10-20 | 김주용 | 반도체 소자 및 그 제조방법 |
JPH07321576A (ja) * | 1994-05-23 | 1995-12-08 | Rohm Co Ltd | 電子ボリウム回路 |
KR0131723B1 (ko) | 1994-06-08 | 1998-04-14 | 김주용 | 반도체소자 및 그 제조방법 |
GB9609276D0 (en) * | 1996-05-07 | 1996-07-10 | Plessey Semiconductors Ltd | Integrated bipolar PNP transistors |
JP3036438B2 (ja) * | 1996-07-31 | 2000-04-24 | 日本電気株式会社 | アナログスイッチ回路 |
JPH11354535A (ja) * | 1998-06-11 | 1999-12-24 | Sony Corp | 半導体装置およびその製造方法 |
-
1998
- 1998-12-07 GB GB9826877A patent/GB2344689A/en not_active Withdrawn
-
1999
- 1999-10-19 TW TW088118043A patent/TW457702B/zh not_active IP Right Cessation
- 1999-11-29 CA CA002354522A patent/CA2354522A1/en not_active Abandoned
- 1999-11-29 AT AT99973353T patent/ATE463047T1/de not_active IP Right Cessation
- 1999-11-29 WO PCT/EP1999/009268 patent/WO2000035017A1/en not_active Application Discontinuation
- 1999-11-29 KR KR1020017007048A patent/KR20010080699A/ko not_active Application Discontinuation
- 1999-11-29 AU AU13875/00A patent/AU1387500A/en not_active Abandoned
- 1999-11-29 JP JP2000587381A patent/JP4838421B2/ja not_active Expired - Fee Related
- 1999-11-29 CN CNB998160733A patent/CN1161840C/zh not_active Expired - Fee Related
- 1999-11-29 DE DE69942209T patent/DE69942209D1/de not_active Expired - Lifetime
- 1999-11-29 EP EP99973353A patent/EP1147558B1/en not_active Expired - Lifetime
- 1999-12-06 US US09/455,398 patent/US6426667B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6426667B1 (en) | 2002-07-30 |
CN1161840C (zh) | 2004-08-11 |
JP4838421B2 (ja) | 2011-12-14 |
CA2354522A1 (en) | 2000-06-15 |
TW457702B (en) | 2001-10-01 |
EP1147558A1 (en) | 2001-10-24 |
KR20010080699A (ko) | 2001-08-22 |
WO2000035017A1 (en) | 2000-06-15 |
GB2344689A (en) | 2000-06-14 |
JP2002532883A (ja) | 2002-10-02 |
ATE463047T1 (de) | 2010-04-15 |
GB9826877D0 (en) | 1999-01-27 |
DE69942209D1 (de) | 2010-05-12 |
AU1387500A (en) | 2000-06-26 |
EP1147558B1 (en) | 2010-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: ELLISON TELEPHONE CO., LTD. Effective date: 20040827 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040827 Address after: Munich, Germany Patentee after: Infennian Technologies AG Address before: Stockholm Patentee before: Ericsson Telephone AB |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040811 Termination date: 20161129 |
|
CF01 | Termination of patent right due to non-payment of annual fee |