JP5714475B2 - 増幅装置 - Google Patents
増幅装置 Download PDFInfo
- Publication number
- JP5714475B2 JP5714475B2 JP2011269200A JP2011269200A JP5714475B2 JP 5714475 B2 JP5714475 B2 JP 5714475B2 JP 2011269200 A JP2011269200 A JP 2011269200A JP 2011269200 A JP2011269200 A JP 2011269200A JP 5714475 B2 JP5714475 B2 JP 5714475B2
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- JP
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- Prior art keywords
- amplifier
- bipolar transistor
- switching unit
- frequency signal
- output terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000000034 method Methods 0.000 claims description 25
- 230000003321 amplification Effects 0.000 claims description 22
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 21
- 241001125929 Trisopterus luscus Species 0.000 description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 GaAs compound Chemical class 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/417—A switch coupled in the output circuit of an amplifier being controlled by a circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Description
図1は、本発明の第1の実施形態に係る増幅装置100の構成の一例を示す説明図である。
スイッチング部106は、インピーダンス変成器MSTLと、第1バイポーラトランジスタTR1と、第2バイポーラトランジスタTR2とを備える。
次に、スイッチング部106におけるスイッチング動作の一例について説明する。
例えば、制御電圧Vc0の電圧レベルがハイレベル、制御電圧Vc1の電圧レベルがハイレベルのとき、第1バイポーラトランジスタTR1と、第2バイポーラトランジスタTR2とは、オン状態となる。このとき、図1に示すA点では、グランド(接地)に対して短絡状態となる。また、インピーダンス変成器MSTLによって、図1に示す点Bでは開放状態となり、第2増幅器104に係る信号経路は、第1増幅器102に係る信号経路に影響を及ぼさない。
例えば、制御電圧Vc0の電圧レベルがハイレベル、制御電圧Vc1の電圧レベルがローレベルのとき、第1バイポーラトランジスタTR1と、第2バイポーラトランジスタTR2とは、オフ状態となる。よって、第2増幅器104−出力端子Pout間、すなわち、第2増幅器104に係る信号経路の挿入損失は最小となる。
本発明の実施形態に係る増幅装置の構成は、図1に示す構成に限られない。図3は、本発明の第2の実施形態に係る増幅装置200の構成の一例を示す説明図である。
本発明の実施形態に係る増幅装置の構成は、図1に示す第1の実施形態に係る構成や、図3に示す第2の実施形態に係る構成に限られない。
102 第1増幅器
104 第2増幅器
106、202 スイッチング部
TR1 第1バイポーラトランジスタ
TR2 第2バイポーラトランジスタ
C1 キャパシタ
Claims (2)
- 高周波信号が入力される入力端子と、高周波信号が出力される出力端子との間に接続され、バイポーラトランジスタを含み、入力端子から入力される高周波信号を増幅する第1増幅器と、
バイポーラトランジスタを含み、前記入力端子から入力される高周波信号を増幅し、前記第1増幅器よりも最大出力電力が低い第2増幅器と、
前記第2増幅器と前記出力端子との間に接続され、前記第2増幅器により増幅された高周波信号を、選択的に前記出力端子から出力させるスイッチング部と、
を備え、
前記スイッチング部は、
前記第2増幅器と前記出力端子との間の信号線上に設けられる、インピーダンスの変換を行うインピーダンス変成器と、
エミッタが接地され、コレクタが前記信号線に接続され、前記スイッチング部におけるスイッチング動作を制御する制御電圧に応じた電流がベースに印加される、第1バイポーラトランジスタと、
コレクタが接地され、エミッタが前記信号線に接続され、前記制御電圧に応じた電流がベースに印加される、第2バイポーラトランジスタと、
前記第2バイポーラトランジスタのベースに一端が接続され、他端が接地されるキャパシタと、
を備え、
前記インピーダンス変成器は、
一端が前記出力端子に接続され、他端が前記第1バイポーラトランジスタのコレクタ、および前記第2バイポーラトランジスタのエミッタと接続され、
前記第1バイポーラトランジスタと前記第2バイポーラトランジスタとがオン状態となることにより前記他端側の前記信号線が接地された場合には、前記第2増幅器と前記出力端子とを開放状態にさせることを特徴とする、増幅装置。 - 前記第1増幅器と前記第2増幅器とが含むバイポーラトランジスタと、前記スイッチング部が備える前記第1バイポーラトランジスタ、および前記第2バイポーラトランジスタとは、同一プロセスにより形成されることを特徴とする、請求項1に記載の増幅装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011269200A JP5714475B2 (ja) | 2011-12-08 | 2011-12-08 | 増幅装置 |
KR1020120039692A KR101503973B1 (ko) | 2011-12-08 | 2012-04-17 | 증폭장치 |
US13/610,538 US8860506B2 (en) | 2011-12-08 | 2012-09-11 | Amplifying apparatus |
CN201210357297.8A CN103166579B (zh) | 2011-12-08 | 2012-09-21 | 放大装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011269200A JP5714475B2 (ja) | 2011-12-08 | 2011-12-08 | 増幅装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013121131A JP2013121131A (ja) | 2013-06-17 |
JP5714475B2 true JP5714475B2 (ja) | 2015-05-07 |
Family
ID=48571431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011269200A Expired - Fee Related JP5714475B2 (ja) | 2011-12-08 | 2011-12-08 | 増幅装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8860506B2 (ja) |
JP (1) | JP5714475B2 (ja) |
KR (1) | KR101503973B1 (ja) |
CN (1) | CN103166579B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104378071B (zh) * | 2014-11-07 | 2017-10-10 | 北京旋极星源技术有限公司 | 一种用于雷达系统的宽带功率放大器芯片及放大器 |
JP2017183839A (ja) * | 2016-03-28 | 2017-10-05 | 株式会社村田製作所 | 電力増幅回路 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6012719B2 (ja) * | 1976-06-08 | 1985-04-03 | 三菱電機株式会社 | サンプルホ−ルド回路 |
JPH07307390A (ja) * | 1994-05-13 | 1995-11-21 | Hitachi Ltd | 半導体装置 |
US5832305A (en) * | 1996-12-02 | 1998-11-03 | Ncr Corporation | Multiple stage analog bi-directional selector utilizing coupled pairs of bi-polar junction transistors connected to pull-up resistors |
GB2344689A (en) * | 1998-12-07 | 2000-06-14 | Ericsson Telefon Ab L M | Analogue switch |
JP2001211090A (ja) | 2000-01-28 | 2001-08-03 | Matsushita Electric Ind Co Ltd | 高周波電力増幅回路およびそれを用いた携帯電話端末 |
JP2002185270A (ja) * | 2000-12-18 | 2002-06-28 | Matsushita Electric Ind Co Ltd | 電力増幅器および通信機器 |
US7102444B2 (en) * | 2004-01-20 | 2006-09-05 | Anadigics, Inc. | Method and apparatus for compensating and improving efficiency in a variable power amplifier |
US7135919B2 (en) * | 2004-08-06 | 2006-11-14 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Power amplifier with switchable load |
JP2007013451A (ja) * | 2005-06-29 | 2007-01-18 | Matsushita Electric Ind Co Ltd | スイッチ回路、受光増幅回路及び光ピックアップ装置 |
JP2007019578A (ja) * | 2005-07-05 | 2007-01-25 | Hitachi Ltd | 電力増幅器およびそれを用いた送信機 |
DE102005050622A1 (de) * | 2005-10-21 | 2007-05-03 | Infineon Technologies Ag | Sendeendstufe mit einstellbarer Ausgangsleistung und Verfahren zum Verstärken eines Signals in einer Sendeendstufe |
CN201438689U (zh) * | 2009-04-30 | 2010-04-14 | 惠州市正源微电子有限公司 | 射频功率放大器高低功率合成电路 |
CN101562425B (zh) * | 2009-05-26 | 2011-06-22 | 惠州市正源微电子有限公司 | 一种射频功率放大器高低功率合成电路 |
JP5620804B2 (ja) * | 2010-12-16 | 2014-11-05 | ルネサスエレクトロニクス株式会社 | 高周波電力増幅装置 |
-
2011
- 2011-12-08 JP JP2011269200A patent/JP5714475B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-17 KR KR1020120039692A patent/KR101503973B1/ko active IP Right Grant
- 2012-09-11 US US13/610,538 patent/US8860506B2/en not_active Expired - Fee Related
- 2012-09-21 CN CN201210357297.8A patent/CN103166579B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2013121131A (ja) | 2013-06-17 |
KR20130064679A (ko) | 2013-06-18 |
CN103166579A (zh) | 2013-06-19 |
US8860506B2 (en) | 2014-10-14 |
KR101503973B1 (ko) | 2015-03-18 |
US20130147551A1 (en) | 2013-06-13 |
CN103166579B (zh) | 2016-09-07 |
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