CN1327040C - 重复加料生长晶体的装置及其方法 - Google Patents
重复加料生长晶体的装置及其方法 Download PDFInfo
- Publication number
- CN1327040C CN1327040C CNB038266067A CN03826606A CN1327040C CN 1327040 C CN1327040 C CN 1327040C CN B038266067 A CNB038266067 A CN B038266067A CN 03826606 A CN03826606 A CN 03826606A CN 1327040 C CN1327040 C CN 1327040C
- Authority
- CN
- China
- Prior art keywords
- raw material
- growth
- filling tube
- melting pot
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2003/000579 WO2005007941A1 (en) | 2003-07-18 | 2003-07-18 | An apparatus and method for recharge raw material |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1788113A CN1788113A (zh) | 2006-06-14 |
CN1327040C true CN1327040C (zh) | 2007-07-18 |
Family
ID=34069972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038266067A Expired - Fee Related CN1327040C (zh) | 2003-07-18 | 2003-07-18 | 重复加料生长晶体的装置及其方法 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN1327040C (zh) |
AU (1) | AU2003255078A1 (zh) |
WO (1) | WO2005007941A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104514031A (zh) * | 2013-12-02 | 2015-04-15 | 浙江长兴众成电子有限公司 | 一种直拉单晶硅的掺杂装置及使用方法 |
CN104928760A (zh) * | 2015-07-16 | 2015-09-23 | 中国电子科技集团公司第四十六研究所 | 一种用于重掺硼或磷直拉硅单晶掺杂装置和掺杂方法 |
CN106012010A (zh) * | 2016-08-15 | 2016-10-12 | 江苏协鑫硅材料科技发展有限公司 | 一种二次添加掺杂剂的方法和装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104499048A (zh) * | 2014-12-07 | 2015-04-08 | 海安县石油科研仪器有限公司 | 一种连续加料的单晶硅生长工艺 |
CN104911694A (zh) * | 2015-06-01 | 2015-09-16 | 宁晋晶兴电子材料有限公司 | 用于单晶硅棒生产的掺杂工艺 |
CN113930843B (zh) * | 2021-10-22 | 2023-01-17 | 中国电子科技集团公司第二十六研究所 | 一种基于水平定向凝固法生长晶体的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4557795A (en) * | 1980-03-17 | 1985-12-10 | Motorola, Inc. | Melt recharge method |
JPH06263586A (ja) * | 1993-03-15 | 1994-09-20 | Komatsu Electron Metals Co Ltd | 半導体単結晶製造装置 |
JPH0840794A (ja) * | 1994-08-03 | 1996-02-13 | Hitachi Ltd | 単結晶シリコン製造工程におけるリチャージ方法 |
CN1276026A (zh) * | 1997-10-16 | 2000-12-06 | Memc电子材料有限公司 | 用多晶硅炉料制备硅熔体的方法 |
WO2002068732A1 (fr) * | 2001-02-28 | 2002-09-06 | Shin-Etsu Handotai Co., Ltd. | Tube de recharge pour matériau polycristallin solide, et procédé de production de monocristal au moyen de ce tube |
-
2003
- 2003-07-18 AU AU2003255078A patent/AU2003255078A1/en not_active Abandoned
- 2003-07-18 CN CNB038266067A patent/CN1327040C/zh not_active Expired - Fee Related
- 2003-07-18 WO PCT/CN2003/000579 patent/WO2005007941A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4557795A (en) * | 1980-03-17 | 1985-12-10 | Motorola, Inc. | Melt recharge method |
JPH06263586A (ja) * | 1993-03-15 | 1994-09-20 | Komatsu Electron Metals Co Ltd | 半導体単結晶製造装置 |
JPH0840794A (ja) * | 1994-08-03 | 1996-02-13 | Hitachi Ltd | 単結晶シリコン製造工程におけるリチャージ方法 |
CN1276026A (zh) * | 1997-10-16 | 2000-12-06 | Memc电子材料有限公司 | 用多晶硅炉料制备硅熔体的方法 |
WO2002068732A1 (fr) * | 2001-02-28 | 2002-09-06 | Shin-Etsu Handotai Co., Ltd. | Tube de recharge pour matériau polycristallin solide, et procédé de production de monocristal au moyen de ce tube |
Non-Patent Citations (1)
Title |
---|
能够多次投料的硅单晶炉 杨遇春,稀有金属,Chinese Journal of Rare Metals,第01期 1979 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104514031A (zh) * | 2013-12-02 | 2015-04-15 | 浙江长兴众成电子有限公司 | 一种直拉单晶硅的掺杂装置及使用方法 |
CN104928760A (zh) * | 2015-07-16 | 2015-09-23 | 中国电子科技集团公司第四十六研究所 | 一种用于重掺硼或磷直拉硅单晶掺杂装置和掺杂方法 |
CN106012010A (zh) * | 2016-08-15 | 2016-10-12 | 江苏协鑫硅材料科技发展有限公司 | 一种二次添加掺杂剂的方法和装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1788113A (zh) | 2006-06-14 |
WO2005007941A1 (en) | 2005-01-27 |
AU2003255078A1 (en) | 2005-02-04 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: General silicon solar power (Kunshan) Co., Ltd. Assignor: Yuan Jianzhong Contract record no.: 2010310000122 Denomination of invention: Apparatus for growing crystal by repeating adding material and method thereof Granted publication date: 20070718 License type: Exclusive License Open date: 20060614 Record date: 20100728 |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070718 Termination date: 20140718 |
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EXPY | Termination of patent right or utility model |