AU2003255078A1 - An apparatus and method for recharge raw material - Google Patents
An apparatus and method for recharge raw materialInfo
- Publication number
- AU2003255078A1 AU2003255078A1 AU2003255078A AU2003255078A AU2003255078A1 AU 2003255078 A1 AU2003255078 A1 AU 2003255078A1 AU 2003255078 A AU2003255078 A AU 2003255078A AU 2003255078 A AU2003255078 A AU 2003255078A AU 2003255078 A1 AU2003255078 A1 AU 2003255078A1
- Authority
- AU
- Australia
- Prior art keywords
- raw material
- recharge
- recharge raw
- raw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2003/000579 WO2005007941A1 (en) | 2003-07-18 | 2003-07-18 | An apparatus and method for recharge raw material |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003255078A1 true AU2003255078A1 (en) | 2005-02-04 |
Family
ID=34069972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003255078A Abandoned AU2003255078A1 (en) | 2003-07-18 | 2003-07-18 | An apparatus and method for recharge raw material |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN1327040C (en) |
AU (1) | AU2003255078A1 (en) |
WO (1) | WO2005007941A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104514031A (en) * | 2013-12-02 | 2015-04-15 | 浙江长兴众成电子有限公司 | Czochralski monocrystalline silicon doping apparatus and use method thereof |
CN104499048A (en) * | 2014-12-07 | 2015-04-08 | 海安县石油科研仪器有限公司 | Monocrystalline silicon growth process based on continuous feeding |
CN104911694A (en) * | 2015-06-01 | 2015-09-16 | 宁晋晶兴电子材料有限公司 | Doping process for production of silicon single crystal rods |
CN104928760A (en) * | 2015-07-16 | 2015-09-23 | 中国电子科技集团公司第四十六研究所 | Doping device and method for heavy doping boron or phosphorous cz-si single crystals |
CN106012010A (en) * | 2016-08-15 | 2016-10-12 | 江苏协鑫硅材料科技发展有限公司 | Method and apparatus for secondary addition of doping agent |
CN113930843B (en) * | 2021-10-22 | 2023-01-17 | 中国电子科技集团公司第二十六研究所 | Method for growing crystal based on horizontal directional solidification method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4557795A (en) * | 1980-03-17 | 1985-12-10 | Motorola, Inc. | Melt recharge method |
JP2952548B2 (en) * | 1993-03-15 | 1999-09-27 | コマツ電子金属株式会社 | Semiconductor single crystal manufacturing equipment |
JPH0840794A (en) * | 1994-08-03 | 1996-02-13 | Hitachi Ltd | Recharging method in process for producing single crystal silicon |
US5919303A (en) * | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
WO2002068732A1 (en) * | 2001-02-28 | 2002-09-06 | Shin-Etsu Handotai Co., Ltd. | Recharge pipe for solid multicrystal material, and single crystal producing method using the same |
-
2003
- 2003-07-18 CN CNB038266067A patent/CN1327040C/en not_active Expired - Fee Related
- 2003-07-18 AU AU2003255078A patent/AU2003255078A1/en not_active Abandoned
- 2003-07-18 WO PCT/CN2003/000579 patent/WO2005007941A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN1327040C (en) | 2007-07-18 |
CN1788113A (en) | 2006-06-14 |
WO2005007941A1 (en) | 2005-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |