AU2003255078A1 - An apparatus and method for recharge raw material - Google Patents

An apparatus and method for recharge raw material

Info

Publication number
AU2003255078A1
AU2003255078A1 AU2003255078A AU2003255078A AU2003255078A1 AU 2003255078 A1 AU2003255078 A1 AU 2003255078A1 AU 2003255078 A AU2003255078 A AU 2003255078A AU 2003255078 A AU2003255078 A AU 2003255078A AU 2003255078 A1 AU2003255078 A1 AU 2003255078A1
Authority
AU
Australia
Prior art keywords
raw material
recharge
recharge raw
raw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003255078A
Inventor
Jianzhong Yuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2003255078A1 publication Critical patent/AU2003255078A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2003255078A 2003-07-18 2003-07-18 An apparatus and method for recharge raw material Abandoned AU2003255078A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2003/000579 WO2005007941A1 (en) 2003-07-18 2003-07-18 An apparatus and method for recharge raw material

Publications (1)

Publication Number Publication Date
AU2003255078A1 true AU2003255078A1 (en) 2005-02-04

Family

ID=34069972

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003255078A Abandoned AU2003255078A1 (en) 2003-07-18 2003-07-18 An apparatus and method for recharge raw material

Country Status (3)

Country Link
CN (1) CN1327040C (en)
AU (1) AU2003255078A1 (en)
WO (1) WO2005007941A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104514031A (en) * 2013-12-02 2015-04-15 浙江长兴众成电子有限公司 Czochralski monocrystalline silicon doping apparatus and use method thereof
CN104499048A (en) * 2014-12-07 2015-04-08 海安县石油科研仪器有限公司 Monocrystalline silicon growth process based on continuous feeding
CN104911694A (en) * 2015-06-01 2015-09-16 宁晋晶兴电子材料有限公司 Doping process for production of silicon single crystal rods
CN104928760A (en) * 2015-07-16 2015-09-23 中国电子科技集团公司第四十六研究所 Doping device and method for heavy doping boron or phosphorous cz-si single crystals
CN106012010A (en) * 2016-08-15 2016-10-12 江苏协鑫硅材料科技发展有限公司 Method and apparatus for secondary addition of doping agent
CN113930843B (en) * 2021-10-22 2023-01-17 中国电子科技集团公司第二十六研究所 Method for growing crystal based on horizontal directional solidification method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557795A (en) * 1980-03-17 1985-12-10 Motorola, Inc. Melt recharge method
JP2952548B2 (en) * 1993-03-15 1999-09-27 コマツ電子金属株式会社 Semiconductor single crystal manufacturing equipment
JPH0840794A (en) * 1994-08-03 1996-02-13 Hitachi Ltd Recharging method in process for producing single crystal silicon
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
WO2002068732A1 (en) * 2001-02-28 2002-09-06 Shin-Etsu Handotai Co., Ltd. Recharge pipe for solid multicrystal material, and single crystal producing method using the same

Also Published As

Publication number Publication date
CN1327040C (en) 2007-07-18
CN1788113A (en) 2006-06-14
WO2005007941A1 (en) 2005-01-27

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase