CN1788113A - 重复加料生长晶体的装置及其方法 - Google Patents
重复加料生长晶体的装置及其方法 Download PDFInfo
- Publication number
- CN1788113A CN1788113A CN03826606.7A CN03826606A CN1788113A CN 1788113 A CN1788113 A CN 1788113A CN 03826606 A CN03826606 A CN 03826606A CN 1788113 A CN1788113 A CN 1788113A
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- CN
- China
- Prior art keywords
- raw material
- crystal
- charge pipe
- growth
- melting pot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
- 权利 要 求1、 一种重复加料生长晶体的装置, 主要包含: 熔化生长晶体原料的熔料 坩埚, 熔料坩埚置于石墨加热器内的石墨坩埚里, 其特征在于包含有向熔料坩 埚里加生长原料的加料管,加料管的底部端口是用与加入的生长原料相同原料 构成的底板盖住。2、 根据权利要求 1所述的重复加料生长晶体的装置的方法, 其特征在于 具体方法步骤是-(1) 首先将加料管的底部端口用与加入生长原料相同原料构成的底板盖 住;(2) 将生长原料装入加料管内;(3) 将加料管的顶端吊挂在籽晶挂钩上;(4) 当熔料坩埚里有熔融的熔液时, 将装有生长原料的加料管的底端底板 放入熔液中;(5) 待加料管底端的底板熔化后, 一部分生长原料落入熔料坩埚内, 提升 加料管;(6) 当加料管内的生长原料全部落入熔料坩埚内, 提出空的加料管, 生长 原料全部熔化成熔液时, 放入所要生长晶体的晶种, 开始拉制晶体;(7)一根完整的晶体棒拉制完成提出后, 再反复重复上述步骤。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2003/000579 WO2005007941A1 (en) | 2003-07-18 | 2003-07-18 | An apparatus and method for recharge raw material |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1788113A true CN1788113A (zh) | 2006-06-14 |
CN1327040C CN1327040C (zh) | 2007-07-18 |
Family
ID=34069972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038266067A Expired - Fee Related CN1327040C (zh) | 2003-07-18 | 2003-07-18 | 重复加料生长晶体的装置及其方法 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN1327040C (zh) |
AU (1) | AU2003255078A1 (zh) |
WO (1) | WO2005007941A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104499048A (zh) * | 2014-12-07 | 2015-04-08 | 海安县石油科研仪器有限公司 | 一种连续加料的单晶硅生长工艺 |
CN104928760A (zh) * | 2015-07-16 | 2015-09-23 | 中国电子科技集团公司第四十六研究所 | 一种用于重掺硼或磷直拉硅单晶掺杂装置和掺杂方法 |
CN113930843A (zh) * | 2021-10-22 | 2022-01-14 | 中国电子科技集团公司第二十六研究所 | 一种基于水平定向凝固法生长晶体的方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104514031A (zh) * | 2013-12-02 | 2015-04-15 | 浙江长兴众成电子有限公司 | 一种直拉单晶硅的掺杂装置及使用方法 |
CN104911694A (zh) * | 2015-06-01 | 2015-09-16 | 宁晋晶兴电子材料有限公司 | 用于单晶硅棒生产的掺杂工艺 |
CN106012010A (zh) * | 2016-08-15 | 2016-10-12 | 江苏协鑫硅材料科技发展有限公司 | 一种二次添加掺杂剂的方法和装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4557795A (en) * | 1980-03-17 | 1985-12-10 | Motorola, Inc. | Melt recharge method |
JP2952548B2 (ja) * | 1993-03-15 | 1999-09-27 | コマツ電子金属株式会社 | 半導体単結晶製造装置 |
JPH0840794A (ja) * | 1994-08-03 | 1996-02-13 | Hitachi Ltd | 単結晶シリコン製造工程におけるリチャージ方法 |
US5919303A (en) * | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
JP4103593B2 (ja) * | 2001-02-28 | 2008-06-18 | 信越半導体株式会社 | 固形状多結晶原料のリチャージ管及びそれを用いた単結晶の製造方法 |
-
2003
- 2003-07-18 CN CNB038266067A patent/CN1327040C/zh not_active Expired - Fee Related
- 2003-07-18 AU AU2003255078A patent/AU2003255078A1/en not_active Abandoned
- 2003-07-18 WO PCT/CN2003/000579 patent/WO2005007941A1/zh active Application Filing
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104499048A (zh) * | 2014-12-07 | 2015-04-08 | 海安县石油科研仪器有限公司 | 一种连续加料的单晶硅生长工艺 |
CN104928760A (zh) * | 2015-07-16 | 2015-09-23 | 中国电子科技集团公司第四十六研究所 | 一种用于重掺硼或磷直拉硅单晶掺杂装置和掺杂方法 |
CN113930843A (zh) * | 2021-10-22 | 2022-01-14 | 中国电子科技集团公司第二十六研究所 | 一种基于水平定向凝固法生长晶体的方法 |
Also Published As
Publication number | Publication date |
---|---|
AU2003255078A1 (en) | 2005-02-04 |
CN1327040C (zh) | 2007-07-18 |
WO2005007941A1 (en) | 2005-01-27 |
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C14 | Grant of patent or utility model | ||
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: General silicon solar power (Kunshan) Co., Ltd. Assignor: Yuan Jianzhong Contract record no.: 2010310000122 Denomination of invention: Apparatus for growing crystal by repeating adding material and method thereof Granted publication date: 20070718 License type: Exclusive License Open date: 20060614 Record date: 20100728 |
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Granted publication date: 20070718 Termination date: 20140718 |
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