CN1327035C - 用于电容器阳极的钽－硅和铌－硅基体 - Google Patents

用于电容器阳极的钽－硅和铌－硅基体 Download PDF

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Publication number
CN1327035C
CN1327035C CNB028048768A CN02804876A CN1327035C CN 1327035 C CN1327035 C CN 1327035C CN B028048768 A CNB028048768 A CN B028048768A CN 02804876 A CN02804876 A CN 02804876A CN 1327035 C CN1327035 C CN 1327035C
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CN
China
Prior art keywords
powder
silicon
tantalum
composition
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028048768A
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English (en)
Chinese (zh)
Other versions
CN1491298A (zh
Inventor
L·辛金斯
A·孔伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Starck GmbH
Original Assignee
HC Starck GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Starck GmbH filed Critical HC Starck GmbH
Publication of CN1491298A publication Critical patent/CN1491298A/zh
Application granted granted Critical
Publication of CN1327035C publication Critical patent/CN1327035C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Inorganic Insulating Materials (AREA)
CNB028048768A 2001-02-12 2002-02-12 用于电容器阳极的钽－硅和铌－硅基体 Expired - Fee Related CN1327035C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26837801P 2001-02-12 2001-02-12
US60/268,378 2001-02-12

Publications (2)

Publication Number Publication Date
CN1491298A CN1491298A (zh) 2004-04-21
CN1327035C true CN1327035C (zh) 2007-07-18

Family

ID=23022730

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028048768A Expired - Fee Related CN1327035C (zh) 2001-02-12 2002-02-12 用于电容器阳极的钽－硅和铌－硅基体

Country Status (12)

Country Link
EP (1) EP1370716A4 (de)
JP (1) JP2004518818A (de)
KR (1) KR20030086593A (de)
CN (1) CN1327035C (de)
AU (1) AU2002243956B2 (de)
BR (1) BR0207200A (de)
CA (1) CA2438246A1 (de)
CZ (1) CZ20032169A3 (de)
IL (1) IL157273A0 (de)
MX (1) MXPA03007171A (de)
RU (1) RU2003127948A (de)
WO (1) WO2002064858A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1370716A4 (de) * 2001-02-12 2007-08-08 Starck H C Inc Tantal-silicium- und niob-silicium-substrate für kondensatoranoden
US7811355B2 (en) 2003-11-10 2010-10-12 Showa Denko K.K. Niobium powder for capacitor, niobium sintered body and capacitor
CN1913523A (zh) * 2005-08-09 2007-02-14 华为技术有限公司 实现层级化虚拟私有交换业务的方法
WO2007130483A2 (en) * 2006-05-05 2007-11-15 Cabot Corporation Tantalum powder with smooth surface and methods of manufacturing same
US7852615B2 (en) * 2008-01-22 2010-12-14 Avx Corporation Electrolytic capacitor anode treated with an organometallic compound

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1010447B (zh) * 1987-06-17 1990-11-14 北京有色金属研究总院 固体电解电容器制造方法
US5700719A (en) * 1990-05-31 1997-12-23 Canon Kabushiki Kaisha Semiconductor device and method for producing the same
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
US6066554A (en) * 1996-07-11 2000-05-23 Electronics And Telecommunications Research Institute Method of manufacturing three elemental diffusion barrier layer
CN1491298A (zh) * 2001-02-12 2004-04-21 H.C. 用于电容器阳极的钽-硅和铌-硅基体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1165510A (en) * 1968-12-13 1969-10-01 Standard Telephones Cables Ltd Solid Electrolytic Capacitors
US4432035A (en) * 1982-06-11 1984-02-14 International Business Machines Corp. Method of making high dielectric constant insulators and capacitors using same
US4859257A (en) * 1986-01-29 1989-08-22 Fansteel Inc. Fine grained embrittlement resistant tantalum wire
US4957541A (en) * 1988-11-01 1990-09-18 Nrc, Inc. Capacitor grade tantalum powder
US6576069B1 (en) * 1998-05-22 2003-06-10 Cabot Corporation Tantalum-silicon alloys and products containing the same and processes of making the same
JP3667531B2 (ja) * 1998-07-07 2005-07-06 松下電器産業株式会社 電解コンデンサの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1010447B (zh) * 1987-06-17 1990-11-14 北京有色金属研究总院 固体电解电容器制造方法
US5700719A (en) * 1990-05-31 1997-12-23 Canon Kabushiki Kaisha Semiconductor device and method for producing the same
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
US6066554A (en) * 1996-07-11 2000-05-23 Electronics And Telecommunications Research Institute Method of manufacturing three elemental diffusion barrier layer
CN1491298A (zh) * 2001-02-12 2004-04-21 H.C. 用于电容器阳极的钽-硅和铌-硅基体

Also Published As

Publication number Publication date
IL157273A0 (en) 2004-02-19
MXPA03007171A (es) 2005-02-14
EP1370716A1 (de) 2003-12-17
BR0207200A (pt) 2004-01-27
AU2002243956B2 (en) 2007-08-02
JP2004518818A (ja) 2004-06-24
EP1370716A4 (de) 2007-08-08
CZ20032169A3 (cs) 2004-03-17
WO2002064858A1 (en) 2002-08-22
RU2003127948A (ru) 2005-03-27
CN1491298A (zh) 2004-04-21
CA2438246A1 (en) 2002-08-22
KR20030086593A (ko) 2003-11-10

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