AU2002243956B2 - Tantalum-silicon and niobium-silicon substrates for capacitor anodes - Google Patents
Tantalum-silicon and niobium-silicon substrates for capacitor anodes Download PDFInfo
- Publication number
- AU2002243956B2 AU2002243956B2 AU2002243956A AU2002243956A AU2002243956B2 AU 2002243956 B2 AU2002243956 B2 AU 2002243956B2 AU 2002243956 A AU2002243956 A AU 2002243956A AU 2002243956 A AU2002243956 A AU 2002243956A AU 2002243956 B2 AU2002243956 B2 AU 2002243956B2
- Authority
- AU
- Australia
- Prior art keywords
- powder
- silicon
- capacitor
- tantalum
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 title description 17
- LIZIAPBBPRPPLV-UHFFFAOYSA-N niobium silicon Chemical compound [Si].[Nb] LIZIAPBBPRPPLV-UHFFFAOYSA-N 0.000 title description 6
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 title description 3
- 239000000843 powder Substances 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 15
- 239000010955 niobium Substances 0.000 claims description 11
- 229910052758 niobium Inorganic materials 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 8
- 239000003792 electrolyte Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000011863 silicon-based powder Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000003870 refractory metal Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims 1
- VYAMDNCPNLFEFT-UHFFFAOYSA-N trihydroxy(propyl)silane Chemical compound CCC[Si](O)(O)O VYAMDNCPNLFEFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 description 19
- 238000005755 formation reaction Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- WFDDMRRZEHUPCP-UHFFFAOYSA-N Nc1ccc(Sc2ccc(Sc3ccc(N)cc3)s2)cc1 Chemical compound Nc1ccc(Sc2ccc(Sc3ccc(N)cc3)s2)cc1 WFDDMRRZEHUPCP-UHFFFAOYSA-N 0.000 description 9
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 8
- 239000008188 pellet Substances 0.000 description 7
- 238000005054 agglomeration Methods 0.000 description 6
- 230000002776 aggregation Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- -1 Ta-Si Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZPZDIFSPRVHGIF-UHFFFAOYSA-N 3-aminopropylsilicon Chemical compound NCCC[Si] ZPZDIFSPRVHGIF-UHFFFAOYSA-N 0.000 description 1
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 102100035353 Cyclin-dependent kinase 2-associated protein 1 Human genes 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- SJWUULVPYAMRCJ-UHFFFAOYSA-N [N].[O].[P] Chemical compound [N].[O].[P] SJWUULVPYAMRCJ-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- WTKKCYNZRWIVKL-UHFFFAOYSA-N tantalum Chemical compound [Ta+5] WTKKCYNZRWIVKL-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Inorganic Insulating Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26837801P | 2001-02-12 | 2001-02-12 | |
| US60/268,378 | 2001-02-12 | ||
| PCT/US2002/004073 WO2002064858A1 (en) | 2001-02-12 | 2002-02-12 | Tantalum-silicon and niobium-silicon substrates for capacitor anodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU2002243956A1 AU2002243956A1 (en) | 2003-02-20 |
| AU2002243956B2 true AU2002243956B2 (en) | 2007-08-02 |
Family
ID=23022730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2002243956A Expired - Fee Related AU2002243956B2 (en) | 2001-02-12 | 2002-02-12 | Tantalum-silicon and niobium-silicon substrates for capacitor anodes |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP1370716A4 (de) |
| JP (1) | JP2004518818A (de) |
| KR (1) | KR20030086593A (de) |
| CN (1) | CN1327035C (de) |
| AU (1) | AU2002243956B2 (de) |
| BR (1) | BR0207200A (de) |
| CA (1) | CA2438246A1 (de) |
| CZ (1) | CZ20032169A3 (de) |
| IL (1) | IL157273A0 (de) |
| MX (1) | MXPA03007171A (de) |
| RU (1) | RU2003127948A (de) |
| WO (1) | WO2002064858A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2003127948A (ru) * | 2001-02-12 | 2005-03-27 | Х.Ц. Штарк, Инк. (Us) | Тантал-кремниевые и ниобий-кремниевые подложки для анодов |
| KR101132267B1 (ko) * | 2003-11-10 | 2012-04-02 | 쇼와 덴코 가부시키가이샤 | 콘덴서용 니오브 분말, 니오브 소결체 및 콘덴서 |
| CN1913523A (zh) * | 2005-08-09 | 2007-02-14 | 华为技术有限公司 | 实现层级化虚拟私有交换业务的方法 |
| JP2009536266A (ja) * | 2006-05-05 | 2009-10-08 | キャボット コーポレイション | タンタル粉末およびその製造方法 |
| US7852615B2 (en) * | 2008-01-22 | 2010-12-14 | Avx Corporation | Electrolytic capacitor anode treated with an organometallic compound |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4432035A (en) * | 1982-06-11 | 1984-02-14 | International Business Machines Corp. | Method of making high dielectric constant insulators and capacitors using same |
| US4957541A (en) * | 1988-11-01 | 1990-09-18 | Nrc, Inc. | Capacitor grade tantalum powder |
| US5700719A (en) * | 1990-05-31 | 1997-12-23 | Canon Kabushiki Kaisha | Semiconductor device and method for producing the same |
| US5965942A (en) * | 1994-09-28 | 1999-10-12 | Sharp Kabushiki Kaisha | Semiconductor memory device with amorphous diffusion barrier between capacitor and plug |
| US6066554A (en) * | 1996-07-11 | 2000-05-23 | Electronics And Telecommunications Research Institute | Method of manufacturing three elemental diffusion barrier layer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1165510A (en) * | 1968-12-13 | 1969-10-01 | Standard Telephones Cables Ltd | Solid Electrolytic Capacitors |
| US4859257A (en) * | 1986-01-29 | 1989-08-22 | Fansteel Inc. | Fine grained embrittlement resistant tantalum wire |
| CN1010447B (zh) * | 1987-06-17 | 1990-11-14 | 北京有色金属研究总院 | 固体电解电容器制造方法 |
| US6576069B1 (en) * | 1998-05-22 | 2003-06-10 | Cabot Corporation | Tantalum-silicon alloys and products containing the same and processes of making the same |
| JP3667531B2 (ja) * | 1998-07-07 | 2005-07-06 | 松下電器産業株式会社 | 電解コンデンサの製造方法 |
| RU2003127948A (ru) * | 2001-02-12 | 2005-03-27 | Х.Ц. Штарк, Инк. (Us) | Тантал-кремниевые и ниобий-кремниевые подложки для анодов |
-
2002
- 2002-02-12 RU RU2003127948/15A patent/RU2003127948A/ru not_active Application Discontinuation
- 2002-02-12 AU AU2002243956A patent/AU2002243956B2/en not_active Expired - Fee Related
- 2002-02-12 BR BR0207200-9A patent/BR0207200A/pt not_active IP Right Cessation
- 2002-02-12 EP EP02709474A patent/EP1370716A4/de not_active Withdrawn
- 2002-02-12 IL IL15727302A patent/IL157273A0/xx unknown
- 2002-02-12 MX MXPA03007171A patent/MXPA03007171A/es active IP Right Grant
- 2002-02-12 JP JP2002564166A patent/JP2004518818A/ja not_active Withdrawn
- 2002-02-12 CZ CZ20032169A patent/CZ20032169A3/cs unknown
- 2002-02-12 CA CA002438246A patent/CA2438246A1/en not_active Abandoned
- 2002-02-12 KR KR10-2003-7010542A patent/KR20030086593A/ko not_active Application Discontinuation
- 2002-02-12 WO PCT/US2002/004073 patent/WO2002064858A1/en active Application Filing
- 2002-02-12 CN CNB028048768A patent/CN1327035C/zh not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4432035A (en) * | 1982-06-11 | 1984-02-14 | International Business Machines Corp. | Method of making high dielectric constant insulators and capacitors using same |
| US4957541A (en) * | 1988-11-01 | 1990-09-18 | Nrc, Inc. | Capacitor grade tantalum powder |
| US5700719A (en) * | 1990-05-31 | 1997-12-23 | Canon Kabushiki Kaisha | Semiconductor device and method for producing the same |
| US5965942A (en) * | 1994-09-28 | 1999-10-12 | Sharp Kabushiki Kaisha | Semiconductor memory device with amorphous diffusion barrier between capacitor and plug |
| US6066554A (en) * | 1996-07-11 | 2000-05-23 | Electronics And Telecommunications Research Institute | Method of manufacturing three elemental diffusion barrier layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2438246A1 (en) | 2002-08-22 |
| WO2002064858A1 (en) | 2002-08-22 |
| JP2004518818A (ja) | 2004-06-24 |
| EP1370716A4 (de) | 2007-08-08 |
| KR20030086593A (ko) | 2003-11-10 |
| BR0207200A (pt) | 2004-01-27 |
| IL157273A0 (en) | 2004-02-19 |
| CN1327035C (zh) | 2007-07-18 |
| CZ20032169A3 (cs) | 2004-03-17 |
| CN1491298A (zh) | 2004-04-21 |
| MXPA03007171A (es) | 2005-02-14 |
| RU2003127948A (ru) | 2005-03-27 |
| EP1370716A1 (de) | 2003-12-17 |
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