EP1370716A4 - Tantal-silicium- und niob-silicium-substrate für kondensatoranoden - Google Patents

Tantal-silicium- und niob-silicium-substrate für kondensatoranoden

Info

Publication number
EP1370716A4
EP1370716A4 EP02709474A EP02709474A EP1370716A4 EP 1370716 A4 EP1370716 A4 EP 1370716A4 EP 02709474 A EP02709474 A EP 02709474A EP 02709474 A EP02709474 A EP 02709474A EP 1370716 A4 EP1370716 A4 EP 1370716A4
Authority
EP
European Patent Office
Prior art keywords
silicon
niobium
tantalum
capacitor anodes
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02709474A
Other languages
English (en)
French (fr)
Other versions
EP1370716A1 (de
Inventor
Leah Simkins
Anastasia Conlon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materion Newton Inc
Original Assignee
HC Starck Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Starck Inc filed Critical HC Starck Inc
Publication of EP1370716A1 publication Critical patent/EP1370716A1/de
Publication of EP1370716A4 publication Critical patent/EP1370716A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Inorganic Insulating Materials (AREA)
EP02709474A 2001-02-12 2002-02-12 Tantal-silicium- und niob-silicium-substrate für kondensatoranoden Withdrawn EP1370716A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26837801P 2001-02-12 2001-02-12
US268378P 2001-02-12
PCT/US2002/004073 WO2002064858A1 (en) 2001-02-12 2002-02-12 Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Publications (2)

Publication Number Publication Date
EP1370716A1 EP1370716A1 (de) 2003-12-17
EP1370716A4 true EP1370716A4 (de) 2007-08-08

Family

ID=23022730

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02709474A Withdrawn EP1370716A4 (de) 2001-02-12 2002-02-12 Tantal-silicium- und niob-silicium-substrate für kondensatoranoden

Country Status (12)

Country Link
EP (1) EP1370716A4 (de)
JP (1) JP2004518818A (de)
KR (1) KR20030086593A (de)
CN (1) CN1327035C (de)
AU (1) AU2002243956B2 (de)
BR (1) BR0207200A (de)
CA (1) CA2438246A1 (de)
CZ (1) CZ20032169A3 (de)
IL (1) IL157273A0 (de)
MX (1) MXPA03007171A (de)
RU (1) RU2003127948A (de)
WO (1) WO2002064858A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2438246A1 (en) * 2001-02-12 2002-08-22 H.C. Starck, Inc. Tantalum-silicon and niobium-silicon substrates for capacitor anodes
ATE554490T1 (de) * 2003-11-10 2012-05-15 Showa Denko Kk Niobpulver für einen kondensator, niob- gesinterter körper und kondensator
CN1913523A (zh) * 2005-08-09 2007-02-14 华为技术有限公司 实现层级化虚拟私有交换业务的方法
CZ306436B6 (cs) * 2006-05-05 2017-01-25 Cabot Corporation Tantalový prášek a způsob jeho výroby a anoda elektrolytického kondenzátoru
US7852615B2 (en) * 2008-01-22 2010-12-14 Avx Corporation Electrolytic capacitor anode treated with an organometallic compound

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3614544A (en) * 1968-12-13 1971-10-19 Int Standard Electric Corp Solid electrolytic capacitors having an additional insulated layer formed on the dielectric layer
US4432035A (en) * 1982-06-11 1984-02-14 International Business Machines Corp. Method of making high dielectric constant insulators and capacitors using same
US4859257A (en) * 1986-01-29 1989-08-22 Fansteel Inc. Fine grained embrittlement resistant tantalum wire
US4957541A (en) * 1988-11-01 1990-09-18 Nrc, Inc. Capacitor grade tantalum powder
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
WO1999061672A1 (en) * 1998-05-22 1999-12-02 Cabot Corporation Tantalum-silicon alloys and products containing the same and processes of making the same
EP0974988A2 (de) * 1998-07-07 2000-01-26 Matsushita Electric Industrial Co., Ltd. Herstellungsverfahren eines Elektrolytkondensators

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1010447B (zh) * 1987-06-17 1990-11-14 北京有色金属研究总院 固体电解电容器制造方法
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
KR100240649B1 (ko) * 1996-11-07 2000-02-01 정선종 삼원계 확산 방지막 형성 방법
CA2438246A1 (en) * 2001-02-12 2002-08-22 H.C. Starck, Inc. Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3614544A (en) * 1968-12-13 1971-10-19 Int Standard Electric Corp Solid electrolytic capacitors having an additional insulated layer formed on the dielectric layer
US4432035A (en) * 1982-06-11 1984-02-14 International Business Machines Corp. Method of making high dielectric constant insulators and capacitors using same
US4859257A (en) * 1986-01-29 1989-08-22 Fansteel Inc. Fine grained embrittlement resistant tantalum wire
US4957541A (en) * 1988-11-01 1990-09-18 Nrc, Inc. Capacitor grade tantalum powder
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
WO1999061672A1 (en) * 1998-05-22 1999-12-02 Cabot Corporation Tantalum-silicon alloys and products containing the same and processes of making the same
EP0974988A2 (de) * 1998-07-07 2000-01-26 Matsushita Electric Industrial Co., Ltd. Herstellungsverfahren eines Elektrolytkondensators

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO02064858A1 *

Also Published As

Publication number Publication date
JP2004518818A (ja) 2004-06-24
KR20030086593A (ko) 2003-11-10
CN1327035C (zh) 2007-07-18
CN1491298A (zh) 2004-04-21
RU2003127948A (ru) 2005-03-27
IL157273A0 (en) 2004-02-19
MXPA03007171A (es) 2005-02-14
BR0207200A (pt) 2004-01-27
AU2002243956B2 (en) 2007-08-02
CZ20032169A3 (cs) 2004-03-17
EP1370716A1 (de) 2003-12-17
CA2438246A1 (en) 2002-08-22
WO2002064858A1 (en) 2002-08-22

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Effective date: 20030912

AK Designated contracting states

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Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

A4 Supplementary search report drawn up and despatched

Effective date: 20070710

RIC1 Information provided on ipc code assigned before grant

Ipc: C25B 11/04 20060101ALI20070704BHEP

Ipc: H01G 9/052 20060101ALI20070704BHEP

Ipc: H01G 9/042 20060101AFI20070704BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20080128

R18D Application deemed to be withdrawn (corrected)

Effective date: 20080129