RU2003127948A - Тантал-кремниевые и ниобий-кремниевые подложки для анодов - Google Patents

Тантал-кремниевые и ниобий-кремниевые подложки для анодов Download PDF

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Publication number
RU2003127948A
RU2003127948A RU2003127948/15A RU2003127948A RU2003127948A RU 2003127948 A RU2003127948 A RU 2003127948A RU 2003127948/15 A RU2003127948/15 A RU 2003127948/15A RU 2003127948 A RU2003127948 A RU 2003127948A RU 2003127948 A RU2003127948 A RU 2003127948A
Authority
RU
Russia
Prior art keywords
silicon
niobi
tantal
anodes
niobium
Prior art date
Application number
RU2003127948/15A
Other languages
English (en)
Inventor
Ли СИМКИНС (US)
Ли СИМКИНС
Анастейша КОНЛОН (US)
Анастейша КОНЛОН
Original Assignee
Х.Ц. Штарк, Инк. (Us)
Х.Ц. Штарк, Инк.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Х.Ц. Штарк, Инк. (Us), Х.Ц. Штарк, Инк. filed Critical Х.Ц. Штарк, Инк. (Us)
Publication of RU2003127948A publication Critical patent/RU2003127948A/ru

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Inorganic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Claims (5)

1. Порошковая подложка, представляющая собой сплав, состоящий из одного тантала или ниобия или обоих тантала и ниобия или их нитридов, включая смешанный и сплавленный с ним компонент кремний.
2. Подложка по п.1, спеченная в пористую анодную массу с улучшенной пористостью существенно однородных пор более крупного размера, в сравнении со спеченными Та или Nb или NbN.
3. Анодная масса по п.2, сформованная для образования диэлектрической окисной пленки сплава на стенках пор.
4. Полностью скомпонованный электролитический конденсатор, включающий анод по п.3.
5. Продукты по пп.1-4 с весовым отношением примерно (Та, Nb)9Si2, включая или не включая азот.
RU2003127948/15A 2001-02-12 2002-02-12 Тантал-кремниевые и ниобий-кремниевые подложки для анодов RU2003127948A (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26837801P 2001-02-12 2001-02-12
US60/268,378 2001-02-12

Publications (1)

Publication Number Publication Date
RU2003127948A true RU2003127948A (ru) 2005-03-27

Family

ID=23022730

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2003127948/15A RU2003127948A (ru) 2001-02-12 2002-02-12 Тантал-кремниевые и ниобий-кремниевые подложки для анодов

Country Status (12)

Country Link
EP (1) EP1370716A4 (ru)
JP (1) JP2004518818A (ru)
KR (1) KR20030086593A (ru)
CN (1) CN1327035C (ru)
AU (1) AU2002243956B2 (ru)
BR (1) BR0207200A (ru)
CA (1) CA2438246A1 (ru)
CZ (1) CZ20032169A3 (ru)
IL (1) IL157273A0 (ru)
MX (1) MXPA03007171A (ru)
RU (1) RU2003127948A (ru)
WO (1) WO2002064858A1 (ru)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2438246A1 (en) * 2001-02-12 2002-08-22 H.C. Starck, Inc. Tantalum-silicon and niobium-silicon substrates for capacitor anodes
ATE554490T1 (de) * 2003-11-10 2012-05-15 Showa Denko Kk Niobpulver für einen kondensator, niob- gesinterter körper und kondensator
CN1913523A (zh) * 2005-08-09 2007-02-14 华为技术有限公司 实现层级化虚拟私有交换业务的方法
GB2450669B (en) * 2006-05-05 2012-03-21 Cabot Corp Tantalam powder and methods of manufacturing same
US7852615B2 (en) * 2008-01-22 2010-12-14 Avx Corporation Electrolytic capacitor anode treated with an organometallic compound

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1165510A (en) * 1968-12-13 1969-10-01 Standard Telephones Cables Ltd Solid Electrolytic Capacitors
US4432035A (en) * 1982-06-11 1984-02-14 International Business Machines Corp. Method of making high dielectric constant insulators and capacitors using same
US4859257A (en) * 1986-01-29 1989-08-22 Fansteel Inc. Fine grained embrittlement resistant tantalum wire
CN1010447B (zh) * 1987-06-17 1990-11-14 北京有色金属研究总院 固体电解电容器制造方法
US4957541A (en) * 1988-11-01 1990-09-18 Nrc, Inc. Capacitor grade tantalum powder
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
KR100240649B1 (ko) * 1996-11-07 2000-02-01 정선종 삼원계 확산 방지막 형성 방법
US6576069B1 (en) * 1998-05-22 2003-06-10 Cabot Corporation Tantalum-silicon alloys and products containing the same and processes of making the same
JP3667531B2 (ja) * 1998-07-07 2005-07-06 松下電器産業株式会社 電解コンデンサの製造方法
CA2438246A1 (en) * 2001-02-12 2002-08-22 H.C. Starck, Inc. Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Also Published As

Publication number Publication date
AU2002243956B2 (en) 2007-08-02
CZ20032169A3 (cs) 2004-03-17
CN1327035C (zh) 2007-07-18
BR0207200A (pt) 2004-01-27
MXPA03007171A (es) 2005-02-14
KR20030086593A (ko) 2003-11-10
CN1491298A (zh) 2004-04-21
CA2438246A1 (en) 2002-08-22
WO2002064858A1 (en) 2002-08-22
EP1370716A1 (en) 2003-12-17
IL157273A0 (en) 2004-02-19
EP1370716A4 (en) 2007-08-08
JP2004518818A (ja) 2004-06-24

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FA94 Acknowledgement of application withdrawn (non-payment of fees)

Effective date: 20090420