CN1322528C - 具有负电子亲和性的注入冷发射极 - Google Patents

具有负电子亲和性的注入冷发射极 Download PDF

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Publication number
CN1322528C
CN1322528C CNB021443998A CN02144399A CN1322528C CN 1322528 C CN1322528 C CN 1322528C CN B021443998 A CNB021443998 A CN B021443998A CN 02144399 A CN02144399 A CN 02144399A CN 1322528 C CN1322528 C CN 1322528C
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China
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district
pop
utmost point
electron
emitter
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Expired - Fee Related
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CNB021443998A
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English (en)
Chinese (zh)
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CN1412805A (zh
Inventor
V·V·奥斯波夫
A·M·布拉特科夫斯基
H·比雷基
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HP Inc
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Hewlett Packard Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

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  • Cold Cathode And The Manufacture (AREA)
CNB021443998A 2001-10-12 2002-10-14 具有负电子亲和性的注入冷发射极 Expired - Fee Related CN1322528C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/974818 2001-10-12
US09/974,818 US6577058B2 (en) 2001-10-12 2001-10-12 Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base

Publications (2)

Publication Number Publication Date
CN1412805A CN1412805A (zh) 2003-04-23
CN1322528C true CN1322528C (zh) 2007-06-20

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Family Applications (1)

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CNB021443998A Expired - Fee Related CN1322528C (zh) 2001-10-12 2002-10-14 具有负电子亲和性的注入冷发射极

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Country Link
US (1) US6577058B2 (enExample)
EP (1) EP1302961A2 (enExample)
JP (1) JP2003123626A (enExample)
CN (1) CN1322528C (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
US7151338B2 (en) * 2003-10-02 2006-12-19 Hewlett-Packard Development Company, L.P. Inorganic electroluminescent device with controlled hole and electron injection
US6937698B2 (en) * 2003-12-04 2005-08-30 Hewlett-Packard Development Company, L.P. X-ray generating apparatus having an emitter formed on a semiconductor structure
WO2006061686A2 (en) * 2004-12-10 2006-06-15 Johan Frans Prins A cathodic device
JP4176760B2 (ja) * 2005-11-04 2008-11-05 株式会社東芝 放電発光デバイス
US8492744B2 (en) * 2009-10-29 2013-07-23 The Board Of Trustees Of The University Of Illinois Semiconducting microcavity and microchannel plasma devices
US8547004B2 (en) 2010-07-27 2013-10-01 The Board Of Trustees Of The University Of Illinois Encapsulated metal microtip microplasma devices, arrays and fabrication methods
CN102360999A (zh) * 2011-11-08 2012-02-22 福州大学 柔性可控有机pn结场发射电子源
KR101523984B1 (ko) * 2013-12-31 2015-05-29 (재)한국나노기술원 공핍영역을 구비한 화합물반도체 소자
JP7407690B2 (ja) 2020-11-02 2024-01-04 株式会社東芝 電子放出素子及び発電素子
JP7653867B2 (ja) * 2021-08-25 2025-03-31 株式会社東芝 熱電子発電素子及び熱電子発電モジュール

Citations (7)

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US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
US5285079A (en) * 1990-03-16 1994-02-08 Canon Kabushiki Kaisha Electron emitting device, electron emitting apparatus and electron beam drawing apparatus
US5550435A (en) * 1993-10-28 1996-08-27 Nec Corporation Field emission cathode apparatus
US5838019A (en) * 1986-05-08 1998-11-17 Canon Kabushiki Kaisha Electron emitting element
US5932962A (en) * 1995-10-09 1999-08-03 Fujitsu Limited Electron emitter elements, their use and fabrication processes therefor
US5945777A (en) * 1998-04-30 1999-08-31 St. Clair Intellectual Property Consultants, Inc. Surface conduction emitters for use in field emission display devices
US6187603B1 (en) * 1996-06-07 2001-02-13 Candescent Technologies Corporation Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material

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Publication number Priority date Publication date Assignee Title
US3699404A (en) * 1971-02-24 1972-10-17 Rca Corp Negative effective electron affinity emitters with drift fields using deep acceptor doping
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
US4683399A (en) * 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
EP0257460B1 (en) * 1986-08-12 1996-04-24 Canon Kabushiki Kaisha Solid-state electron beam generator
US5619092A (en) 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
US5599749A (en) 1994-10-21 1997-02-04 Yamaha Corporation Manufacture of micro electron emitter
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US6204595B1 (en) 1995-07-10 2001-03-20 The Regents Of The University Of California Amorphous-diamond electron emitter
US5908699A (en) 1996-10-11 1999-06-01 Skion Corporation Cold cathode electron emitter and display structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5838019A (en) * 1986-05-08 1998-11-17 Canon Kabushiki Kaisha Electron emitting element
US5285079A (en) * 1990-03-16 1994-02-08 Canon Kabushiki Kaisha Electron emitting device, electron emitting apparatus and electron beam drawing apparatus
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
US5550435A (en) * 1993-10-28 1996-08-27 Nec Corporation Field emission cathode apparatus
US5932962A (en) * 1995-10-09 1999-08-03 Fujitsu Limited Electron emitter elements, their use and fabrication processes therefor
US6187603B1 (en) * 1996-06-07 2001-02-13 Candescent Technologies Corporation Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
US5945777A (en) * 1998-04-30 1999-08-31 St. Clair Intellectual Property Consultants, Inc. Surface conduction emitters for use in field emission display devices

Also Published As

Publication number Publication date
EP1302961A2 (en) 2003-04-16
US6577058B2 (en) 2003-06-10
CN1412805A (zh) 2003-04-23
JP2003123626A (ja) 2003-04-25
US20030071554A1 (en) 2003-04-17

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Granted publication date: 20070620

Termination date: 20101014