JP2003123626A - ワイドギャップの半導体構造に基づく負の電子親和力を備えた注入冷陰極 - Google Patents

ワイドギャップの半導体構造に基づく負の電子親和力を備えた注入冷陰極

Info

Publication number
JP2003123626A
JP2003123626A JP2002295743A JP2002295743A JP2003123626A JP 2003123626 A JP2003123626 A JP 2003123626A JP 2002295743 A JP2002295743 A JP 2002295743A JP 2002295743 A JP2002295743 A JP 2002295743A JP 2003123626 A JP2003123626 A JP 2003123626A
Authority
JP
Japan
Prior art keywords
region
cold cathode
electron
emitter
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002295743A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003123626A5 (enExample
Inventor
Viatcheslav V Ossipov
ヴィアチェスラヴ・ヴイ・オシポヴ
Alexandre M Bratkovski
アレキサンダー・エム・ブラトコヴスキ
Henryk Birecki
ヘンリク・ビレッキ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003123626A publication Critical patent/JP2003123626A/ja
Publication of JP2003123626A5 publication Critical patent/JP2003123626A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Cold Cathode And The Manufacture (AREA)
JP2002295743A 2001-10-12 2002-10-09 ワイドギャップの半導体構造に基づく負の電子親和力を備えた注入冷陰極 Withdrawn JP2003123626A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/974,818 2001-10-12
US09/974,818 US6577058B2 (en) 2001-10-12 2001-10-12 Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base

Publications (2)

Publication Number Publication Date
JP2003123626A true JP2003123626A (ja) 2003-04-25
JP2003123626A5 JP2003123626A5 (enExample) 2005-06-16

Family

ID=25522456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002295743A Withdrawn JP2003123626A (ja) 2001-10-12 2002-10-09 ワイドギャップの半導体構造に基づく負の電子親和力を備えた注入冷陰極

Country Status (4)

Country Link
US (1) US6577058B2 (enExample)
EP (1) EP1302961A2 (enExample)
JP (1) JP2003123626A (enExample)
CN (1) CN1322528C (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101523984B1 (ko) * 2013-12-31 2015-05-29 (재)한국나노기술원 공핍영역을 구비한 화합물반도체 소자
JP2023031431A (ja) * 2021-08-25 2023-03-09 株式会社東芝 熱電子発電素子及び熱電子発電モジュール
US11664182B2 (en) 2020-11-02 2023-05-30 Kabushiki Kaisha Toshiba Electron emitting element and power generation element

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
US7151338B2 (en) * 2003-10-02 2006-12-19 Hewlett-Packard Development Company, L.P. Inorganic electroluminescent device with controlled hole and electron injection
US6937698B2 (en) * 2003-12-04 2005-08-30 Hewlett-Packard Development Company, L.P. X-ray generating apparatus having an emitter formed on a semiconductor structure
WO2006061686A2 (en) * 2004-12-10 2006-06-15 Johan Frans Prins A cathodic device
JP4176760B2 (ja) * 2005-11-04 2008-11-05 株式会社東芝 放電発光デバイス
US8492744B2 (en) * 2009-10-29 2013-07-23 The Board Of Trustees Of The University Of Illinois Semiconducting microcavity and microchannel plasma devices
US8547004B2 (en) 2010-07-27 2013-10-01 The Board Of Trustees Of The University Of Illinois Encapsulated metal microtip microplasma devices, arrays and fabrication methods
CN102360999A (zh) * 2011-11-08 2012-02-22 福州大学 柔性可控有机pn结场发射电子源

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699404A (en) * 1971-02-24 1972-10-17 Rca Corp Negative effective electron affinity emitters with drift fields using deep acceptor doping
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
US4683399A (en) * 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
JP2578801B2 (ja) * 1986-05-20 1997-02-05 キヤノン株式会社 電子放出素子
EP0257460B1 (en) * 1986-08-12 1996-04-24 Canon Kabushiki Kaisha Solid-state electron beam generator
US5285079A (en) * 1990-03-16 1994-02-08 Canon Kabushiki Kaisha Electron emitting device, electron emitting apparatus and electron beam drawing apparatus
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
US5619092A (en) 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
JP2861755B2 (ja) * 1993-10-28 1999-02-24 日本電気株式会社 電界放出型陰極装置
US5599749A (en) 1994-10-21 1997-02-04 Yamaha Corporation Manufacture of micro electron emitter
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US6204595B1 (en) 1995-07-10 2001-03-20 The Regents Of The University Of California Amorphous-diamond electron emitter
JP3526673B2 (ja) 1995-10-09 2004-05-17 富士通株式会社 電子放出素子、電子放出素子アレイ、カソード板及びそれらの製造方法並びに平面表示装置
US6187603B1 (en) 1996-06-07 2001-02-13 Candescent Technologies Corporation Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
US5908699A (en) 1996-10-11 1999-06-01 Skion Corporation Cold cathode electron emitter and display structure
US5945777A (en) * 1998-04-30 1999-08-31 St. Clair Intellectual Property Consultants, Inc. Surface conduction emitters for use in field emission display devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101523984B1 (ko) * 2013-12-31 2015-05-29 (재)한국나노기술원 공핍영역을 구비한 화합물반도체 소자
US11664182B2 (en) 2020-11-02 2023-05-30 Kabushiki Kaisha Toshiba Electron emitting element and power generation element
JP2023031431A (ja) * 2021-08-25 2023-03-09 株式会社東芝 熱電子発電素子及び熱電子発電モジュール
JP7653867B2 (ja) 2021-08-25 2025-03-31 株式会社東芝 熱電子発電素子及び熱電子発電モジュール

Also Published As

Publication number Publication date
EP1302961A2 (en) 2003-04-16
US6577058B2 (en) 2003-06-10
CN1412805A (zh) 2003-04-23
US20030071554A1 (en) 2003-04-17
CN1322528C (zh) 2007-06-20

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