CN1317742C - 降低半导体晶片磨蚀的化学机械磨平组合物 - Google Patents

降低半导体晶片磨蚀的化学机械磨平组合物 Download PDF

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Publication number
CN1317742C
CN1317742C CNB2004100558404A CN200410055840A CN1317742C CN 1317742 C CN1317742 C CN 1317742C CN B2004100558404 A CNB2004100558404 A CN B2004100558404A CN 200410055840 A CN200410055840 A CN 200410055840A CN 1317742 C CN1317742 C CN 1317742C
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CN
China
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composition
acid
weight
chemical machinery
polishes
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Expired - Fee Related
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CNB2004100558404A
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English (en)
Chinese (zh)
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CN1590487A (zh
Inventor
刘振东
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Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
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Rohm and Haas Electronic Materials LLC
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Publication of CN1590487A publication Critical patent/CN1590487A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
CNB2004100558404A 2003-08-05 2004-08-04 降低半导体晶片磨蚀的化学机械磨平组合物 Expired - Fee Related CN1317742C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/634,964 US7300603B2 (en) 2003-08-05 2003-08-05 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US10/634,964 2003-08-05

Publications (2)

Publication Number Publication Date
CN1590487A CN1590487A (zh) 2005-03-09
CN1317742C true CN1317742C (zh) 2007-05-23

Family

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Family Applications (1)

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CNB2004100558404A Expired - Fee Related CN1317742C (zh) 2003-08-05 2004-08-04 降低半导体晶片磨蚀的化学机械磨平组合物

Country Status (7)

Country Link
US (1) US7300603B2 (US07300603-20071127-C00001.png)
EP (1) EP1505134B1 (US07300603-20071127-C00001.png)
JP (1) JP2005123577A (US07300603-20071127-C00001.png)
KR (1) KR20050016171A (US07300603-20071127-C00001.png)
CN (1) CN1317742C (US07300603-20071127-C00001.png)
DE (1) DE602004012357T2 (US07300603-20071127-C00001.png)
TW (1) TWI365906B (US07300603-20071127-C00001.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101221573B (zh) * 2003-04-30 2012-05-02 甲骨文国际公司 将储存库还原到先前状态的方法

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US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP5135755B2 (ja) * 2005-10-21 2013-02-06 日立化成工業株式会社 銅及び銅合金用研磨剤並びにそれを用いた研磨方法
JP2013214786A (ja) * 2005-11-01 2013-10-17 Hitachi Chemical Co Ltd 銅膜及び絶縁材料膜用研磨材及び研磨方法
US7842192B2 (en) 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
US20070249167A1 (en) * 2006-04-21 2007-10-25 Cabot Microelectronics Corporation CMP method for copper-containing substrates
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US20090317638A1 (en) * 2007-02-20 2009-12-24 Sumitomo Electric Industries, Ltd. Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for plishing surface of the nitride crystalline material
CN102352187B (zh) 2007-07-05 2015-03-18 日立化成株式会社 金属膜用研磨液及研磨方法
US9202709B2 (en) 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN102627916B (zh) * 2012-03-23 2014-09-03 江苏中晶科技有限公司 具有强化功能的玻璃抛光液
TWI611049B (zh) * 2014-10-21 2018-01-11 卡博特微電子公司 腐蝕抑制劑及相關組合物及方法
US9593261B2 (en) * 2015-02-04 2017-03-14 Asahi Glass Company, Limited Polishing agent, polishing method, and liquid additive for polishing
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
CN110434680A (zh) * 2019-07-19 2019-11-12 大连理工大学 一种螺旋桨的化学机械抛光液及抛光方法

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CN1246725A (zh) * 1998-08-31 2000-03-08 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
EP1081200A1 (en) * 1999-09-06 2001-03-07 JSR Corporation Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices
US6365520B1 (en) * 1998-02-18 2002-04-02 Rodel Holdings Inc. Small particle size chemical mechanical polishing composition
CN1371529A (zh) * 1999-08-26 2002-09-25 日立化成工业株式会社 化学机械研磨用研磨剂及研磨方法
US20030124959A1 (en) * 2001-12-05 2003-07-03 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents

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US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
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KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
JP4406111B2 (ja) * 1999-04-28 2010-01-27 花王株式会社 研磨液組成物
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US6365520B1 (en) * 1998-02-18 2002-04-02 Rodel Holdings Inc. Small particle size chemical mechanical polishing composition
CN1246725A (zh) * 1998-08-31 2000-03-08 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
CN1371529A (zh) * 1999-08-26 2002-09-25 日立化成工业株式会社 化学机械研磨用研磨剂及研磨方法
EP1081200A1 (en) * 1999-09-06 2001-03-07 JSR Corporation Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices
US20030124959A1 (en) * 2001-12-05 2003-07-03 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101221573B (zh) * 2003-04-30 2012-05-02 甲骨文国际公司 将储存库还原到先前状态的方法

Also Published As

Publication number Publication date
EP1505134A1 (en) 2005-02-09
CN1590487A (zh) 2005-03-09
KR20050016171A (ko) 2005-02-21
DE602004012357D1 (de) 2008-04-24
TW200512280A (en) 2005-04-01
DE602004012357T2 (de) 2009-04-02
US7300603B2 (en) 2007-11-27
TWI365906B (en) 2012-06-11
EP1505134B1 (en) 2008-03-12
US20050029491A1 (en) 2005-02-10
JP2005123577A (ja) 2005-05-12

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