CN1314842C - 用于增加多晶硅熔化速率的间歇式加料技术 - Google Patents

用于增加多晶硅熔化速率的间歇式加料技术 Download PDF

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Publication number
CN1314842C
CN1314842C CNB028223144A CN02822314A CN1314842C CN 1314842 C CN1314842 C CN 1314842C CN B028223144 A CNB028223144 A CN B028223144A CN 02822314 A CN02822314 A CN 02822314A CN 1314842 C CN1314842 C CN 1314842C
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China
Prior art keywords
polysilicon
crucible
wedge
unmelted
silicon
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Expired - Fee Related
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CNB028223144A
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English (en)
Chinese (zh)
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CN1585838A (zh
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J·D·霍尔德
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SunEdison Inc
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SunEdison Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CNB028223144A 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术 Expired - Fee Related CN1314842C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/002,862 2001-11-15
US10/002,862 US20030101924A1 (en) 2001-11-15 2001-11-15 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon

Related Child Applications (1)

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CN2007100860084A Division CN101054717B (zh) 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术

Publications (2)

Publication Number Publication Date
CN1585838A CN1585838A (zh) 2005-02-23
CN1314842C true CN1314842C (zh) 2007-05-09

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Family Applications (2)

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CNB028223144A Expired - Fee Related CN1314842C (zh) 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术
CN2007100860084A Expired - Fee Related CN101054717B (zh) 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术

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CN2007100860084A Expired - Fee Related CN101054717B (zh) 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术

Country Status (8)

Country Link
US (1) US20030101924A1 (cg-RX-API-DMAC10.html)
EP (2) EP1820885A3 (cg-RX-API-DMAC10.html)
JP (1) JP4233453B2 (cg-RX-API-DMAC10.html)
KR (2) KR100860440B1 (cg-RX-API-DMAC10.html)
CN (2) CN1314842C (cg-RX-API-DMAC10.html)
DE (1) DE60220939T2 (cg-RX-API-DMAC10.html)
TW (1) TWI250230B (cg-RX-API-DMAC10.html)
WO (1) WO2003044249A1 (cg-RX-API-DMAC10.html)

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JP5061728B2 (ja) * 2007-05-30 2012-10-31 信越半導体株式会社 シリコン単結晶の育成方法
KR20100050510A (ko) * 2007-07-20 2010-05-13 비피 코포레이션 노쓰 아메리카 인코포레이티드 시드 결정으로부터 캐스트 실리콘을 제조하는 방법
AU2008279417B2 (en) 2007-07-20 2012-06-21 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
WO2009015168A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing geometric multi-crystalline cast materials
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
TW200938664A (en) 2007-12-19 2009-09-16 Schott Ag Method for producing a monocrystalline or polycrystalline semiconductor material
DE102007061704A1 (de) * 2007-12-19 2009-09-10 Schott Ag Verfahren zur Herstellung eines ein- oder polykristallinen Materials
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP5777336B2 (ja) * 2010-12-28 2015-09-09 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 多結晶シリコン原料のリチャージ方法
CN103397389B (zh) * 2013-07-30 2016-08-10 英利能源（中国）有限公司 单晶棒的生产方法
CN103643286B (zh) * 2013-12-13 2016-08-17 英利集团有限公司 单晶炉的加料方法
CN106222750A (zh) * 2016-09-30 2016-12-14 中国电子科技集团公司第二十六研究所 一种硅酸镓镧系列晶体生长方法
CN108018602A (zh) * 2016-11-03 2018-05-11 上海新昇半导体科技有限公司 自动进料系统及进料方法
US20230078325A1 (en) 2021-09-14 2023-03-16 Globalwafers Co., Ltd. Crystal pulling systems having composite polycrystalline silicon feed tubes, methods for preparing such tubes, and methods for forming a single crystal silicon ingot
US12428750B2 (en) 2022-02-25 2025-09-30 Globalwafers Co., Ltd. Ingot puller apparatus having silicon feed tubes with kick plates

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US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
WO1999020815A1 (en) * 1997-10-16 1999-04-29 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
WO2000042243A1 (en) * 1999-01-13 2000-07-20 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
CN1267751A (zh) * 2000-03-30 2000-09-27 天津市半导体材料厂 生产硅单晶的直拉区熔法

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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
WO1999020815A1 (en) * 1997-10-16 1999-04-29 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
WO2000042243A1 (en) * 1999-01-13 2000-07-20 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
CN1267751A (zh) * 2000-03-30 2000-09-27 天津市半导体材料厂 生产硅单晶的直拉区熔法

Also Published As

Publication number Publication date
TWI250230B (en) 2006-03-01
EP1820885A3 (en) 2008-11-12
EP1446517A1 (en) 2004-08-18
TW200303942A (en) 2003-09-16
KR100860440B1 (ko) 2008-09-25
US20030101924A1 (en) 2003-06-05
EP1820885A2 (en) 2007-08-22
EP1446517B1 (en) 2007-06-27
JP2005515951A (ja) 2005-06-02
KR20050044493A (ko) 2005-05-12
CN101054717B (zh) 2012-04-25
KR20070038578A (ko) 2007-04-10
CN1585838A (zh) 2005-02-23
DE60220939T2 (de) 2008-01-03
WO2003044249A1 (en) 2003-05-30
JP4233453B2 (ja) 2009-03-04
DE60220939D1 (de) 2007-08-09
KR100811989B1 (ko) 2008-03-10
CN101054717A (zh) 2007-10-17

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