CN1311282C - 液晶显示装置和电子设备 - Google Patents
液晶显示装置和电子设备 Download PDFInfo
- Publication number
- CN1311282C CN1311282C CNB031575323A CN03157532A CN1311282C CN 1311282 C CN1311282 C CN 1311282C CN B031575323 A CNB031575323 A CN B031575323A CN 03157532 A CN03157532 A CN 03157532A CN 1311282 C CN1311282 C CN 1311282C
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- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000011159 matrix material Substances 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims description 57
- 239000004973 liquid crystal related substance Substances 0.000 claims description 44
- 230000015572 biosynthetic process Effects 0.000 claims description 35
- 230000033228 biological regulation Effects 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 15
- 238000013517 stratification Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000000149 argon plasma sintering Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000002520 cambial effect Effects 0.000 claims description 6
- 230000004313 glare Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 60
- 238000000034 method Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 19
- 238000002834 transmittance Methods 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 229920001709 polysilazane Polymers 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920000592 inorganic polymer Polymers 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 241000408655 Dispar Species 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002286136 | 2002-09-30 | ||
JP286136/2002 | 2002-09-30 | ||
JP068322/2003 | 2003-03-13 | ||
JP2003068322 | 2003-03-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1493908A CN1493908A (zh) | 2004-05-05 |
CN1311282C true CN1311282C (zh) | 2007-04-18 |
Family
ID=32715571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031575323A Expired - Lifetime CN1311282C (zh) | 2002-09-30 | 2003-09-23 | 液晶显示装置和电子设备 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7084940B2 (zh) |
KR (1) | KR100674291B1 (zh) |
CN (1) | CN1311282C (zh) |
TW (1) | TWI250342B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070002492A (ko) * | 2005-06-30 | 2007-01-05 | 삼성전자주식회사 | 디스플레이장치 및 그 제조방법 |
JP2008241726A (ja) * | 2005-07-13 | 2008-10-09 | Sharp Corp | 液晶ディスプレイ用基板 |
JP4432863B2 (ja) * | 2005-09-05 | 2010-03-17 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置及び電子機器 |
JP4216870B2 (ja) * | 2006-07-07 | 2009-01-28 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置 |
KR20090070761A (ko) * | 2007-12-27 | 2009-07-01 | 삼성전자주식회사 | 박막 트랜지스터 표시판, 그 제조 방법 및 액정 표시 장치 |
JP2010249935A (ja) * | 2009-04-13 | 2010-11-04 | Sony Corp | 表示装置 |
CN102598891B (zh) * | 2009-07-16 | 2015-11-25 | Lg化学株式会社 | 电导体及其制造方法 |
US8847196B2 (en) * | 2011-05-17 | 2014-09-30 | Micron Technology, Inc. | Resistive memory cell |
US9588265B2 (en) * | 2011-07-11 | 2017-03-07 | Dai Nippon Printing Co., Ltd. | Color filter forming substrate, method of manufacturing same and display device |
JP6567078B2 (ja) | 2015-01-12 | 2019-08-28 | ドルビー ラボラトリーズ ライセンシング コーポレイション | 画素タイル構造およびレイアウト |
CN105789220B (zh) * | 2016-03-24 | 2019-05-14 | 京东方科技集团股份有限公司 | 一种双栅线阵列基板、测试方法、显示面板和显示装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408345A (en) * | 1991-09-10 | 1995-04-18 | Sharp Kabushiki Kaisha | Reflection type liquid crystal display device wherein the reflector has bumps |
US5610741A (en) * | 1994-06-24 | 1997-03-11 | Sharp Kabushiki Kaisha | Reflection type liquid crystal display device with bumps on the reflector |
CN1188248A (zh) * | 1996-10-23 | 1998-07-22 | 夏普公司 | 反射板,反射式液晶显示装置及其制造方法 |
JP2000267089A (ja) * | 1999-03-17 | 2000-09-29 | Seiko Epson Corp | 液晶装置、その製造方法及び電子機器 |
US6262783B1 (en) * | 1997-03-12 | 2001-07-17 | Sharp Kabushiki Kaisha | Liquid crystal display device with reflective electrodes and method for fabricating the same |
JP2002148609A (ja) * | 2000-11-10 | 2002-05-22 | Nec Corp | 反射型液晶表示装置及びその製造方法 |
JP2002258278A (ja) * | 2000-12-26 | 2002-09-11 | Toshiba Corp | 液晶表示装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3203331B2 (ja) | 1998-05-29 | 2001-08-27 | 松下電器産業株式会社 | 反射型液晶表示装置 |
JP2000221494A (ja) | 1999-01-28 | 2000-08-11 | Kyocera Corp | 反射型液晶表示装置 |
JP3471246B2 (ja) | 1999-03-29 | 2003-12-02 | シャープ株式会社 | 液晶表示装置の製造方法 |
JP2001141915A (ja) | 1999-07-19 | 2001-05-25 | Matsushita Electric Ind Co Ltd | 反射板及びその製造方法、並びに反射板を備えた反射型表示素子及びその製造方法 |
KR100407413B1 (ko) | 1999-07-19 | 2003-11-28 | 마쯔시다덴기산교 가부시키가이샤 | 반사판 및 그 제조방법, 및 반사판을 구비한 반사형표시소자 및 그 제조방법 |
JP3372907B2 (ja) | 1999-09-10 | 2003-02-04 | 京セラ株式会社 | 液晶表示装置の製造方法 |
JP3962191B2 (ja) | 1999-11-29 | 2007-08-22 | 旭硝子株式会社 | 光反射性基板の製造方法およびこれを使用した反射型液晶表示装置 |
JP2001194662A (ja) | 2000-01-14 | 2001-07-19 | Nec Corp | 反射型液晶表示装置及びその製造方法 |
JP3626652B2 (ja) * | 2000-01-21 | 2005-03-09 | 日本電気株式会社 | 反射型液晶表示装置及びその製造方法 |
JP2001215529A (ja) | 2000-02-03 | 2001-08-10 | Matsushita Electric Ind Co Ltd | 反射型液晶表示装置 |
JP2002014211A (ja) | 2000-04-24 | 2002-01-18 | Matsushita Electric Ind Co Ltd | 反射板、反射型液晶表示装置及びその製造方法、光学部材、表示装置、照明装置、表示板、並びに波動部材 |
JP3365409B2 (ja) | 2000-11-08 | 2003-01-14 | 日本電気株式会社 | 反射板並びに反射型液晶表示装置及びその製造方法 |
JP4993830B2 (ja) | 2000-11-11 | 2012-08-08 | 三星電子株式会社 | 反射型液晶表示装置及びその製造方法 |
JP2002214641A (ja) | 2001-01-15 | 2002-07-31 | Toshiba Corp | 平面表示装置用アレイ基板の製造方法 |
JP3866522B2 (ja) | 2001-02-14 | 2007-01-10 | 日本電気株式会社 | アクティブマトリクス型液晶表示装置及びその製造方法 |
JP3990141B2 (ja) | 2001-11-08 | 2007-10-10 | Nec液晶テクノロジー株式会社 | 液晶表示装置 |
-
2003
- 2003-09-10 TW TW092125102A patent/TWI250342B/zh not_active IP Right Cessation
- 2003-09-23 CN CNB031575323A patent/CN1311282C/zh not_active Expired - Lifetime
- 2003-09-29 US US10/671,451 patent/US7084940B2/en not_active Expired - Lifetime
- 2003-09-29 KR KR1020030067382A patent/KR100674291B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408345A (en) * | 1991-09-10 | 1995-04-18 | Sharp Kabushiki Kaisha | Reflection type liquid crystal display device wherein the reflector has bumps |
US5610741A (en) * | 1994-06-24 | 1997-03-11 | Sharp Kabushiki Kaisha | Reflection type liquid crystal display device with bumps on the reflector |
CN1188248A (zh) * | 1996-10-23 | 1998-07-22 | 夏普公司 | 反射板,反射式液晶显示装置及其制造方法 |
US6262783B1 (en) * | 1997-03-12 | 2001-07-17 | Sharp Kabushiki Kaisha | Liquid crystal display device with reflective electrodes and method for fabricating the same |
JP2000267089A (ja) * | 1999-03-17 | 2000-09-29 | Seiko Epson Corp | 液晶装置、その製造方法及び電子機器 |
JP2002148609A (ja) * | 2000-11-10 | 2002-05-22 | Nec Corp | 反射型液晶表示装置及びその製造方法 |
JP2002258278A (ja) * | 2000-12-26 | 2002-09-11 | Toshiba Corp | 液晶表示装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20040028586A (ko) | 2004-04-03 |
TW200415400A (en) | 2004-08-16 |
CN1493908A (zh) | 2004-05-05 |
KR100674291B1 (ko) | 2007-01-24 |
TWI250342B (en) | 2006-03-01 |
US20040141136A1 (en) | 2004-07-22 |
US7084940B2 (en) | 2006-08-01 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160531 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: Hongkong, China Patentee before: BOE Technology (Hongkong) Co.,Ltd. Effective date of registration: 20160531 Address after: Hongkong, China Patentee after: BOE Technology (Hongkong) Co.,Ltd. Address before: Tokyo, Japan Patentee before: Seiko Epson Corp. |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20070418 |