CN1296665A - 带有温度补偿和各种操作模式的精确弛豫振荡器 - Google Patents

带有温度补偿和各种操作模式的精确弛豫振荡器 Download PDF

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Publication number
CN1296665A
CN1296665A CN99804764A CN99804764A CN1296665A CN 1296665 A CN1296665 A CN 1296665A CN 99804764 A CN99804764 A CN 99804764A CN 99804764 A CN99804764 A CN 99804764A CN 1296665 A CN1296665 A CN 1296665A
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China
Prior art keywords
circuit
operator scheme
clock pulse
condenser
current
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CN99804764A
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English (en)
Chinese (zh)
Inventor
詹姆斯·B·诺兰
瑞安·S·埃利森
迈克尔·S·派斯卡
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Microchip Technology Inc
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Microchip Technology Inc
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Publication date
Priority claimed from US09/205,758 external-priority patent/US6052035A/en
Application filed by Microchip Technology Inc filed Critical Microchip Technology Inc
Publication of CN1296665A publication Critical patent/CN1296665A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01Details
    • H03K3/011Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature

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  • Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
CN99804764A 1998-12-04 1999-12-06 带有温度补偿和各种操作模式的精确弛豫振荡器 Pending CN1296665A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/205,758 US6052035A (en) 1998-03-19 1998-12-04 Oscillator with clock output inhibition control
US09/205,578 1998-12-04

Publications (1)

Publication Number Publication Date
CN1296665A true CN1296665A (zh) 2001-05-23

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CN99804764A Pending CN1296665A (zh) 1998-12-04 1999-12-06 带有温度补偿和各种操作模式的精确弛豫振荡器

Country Status (4)

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EP (1) EP1053596A1 (de)
JP (1) JP2003529227A (de)
KR (1) KR20010040690A (de)
CN (1) CN1296665A (de)

Cited By (14)

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CN100348067C (zh) * 2004-09-02 2007-11-07 萨基姆通讯公司 移动电话和使用该移动电话的方法
CN100527040C (zh) * 2003-02-27 2009-08-12 阿纳洛格装置公司 一种带隙电压参考电路以及用于产生温度曲率校准电压参考的方法
CN102024426A (zh) * 2009-09-14 2011-04-20 三星电机株式会社 基准信号发生器及用于lcd背光的pwm控制电路
CN101626235B (zh) * 2008-07-09 2011-11-02 盛群半导体股份有限公司 一种振荡器操作模式控制方法及装置
CN102356549A (zh) * 2009-03-18 2012-02-15 Nxp股份有限公司 工艺、电压、温度补偿振荡器
CN102780470A (zh) * 2011-05-10 2012-11-14 Nxp股份有限公司 具有低电流损耗快速响应时间的振荡器结构以及用于操作这种振荡器结构的方法
CN102820852A (zh) * 2011-06-09 2012-12-12 英飞凌科技奥地利有限公司 用于产生振荡信号的方法和振荡器电路
CN1787369B (zh) * 2004-12-10 2013-04-03 三菱电机株式会社 半导体电路
CN103580655A (zh) * 2012-07-24 2014-02-12 飞思卡尔半导体公司 比较器和采用比较器的张弛振荡器
CN108832896A (zh) * 2018-06-25 2018-11-16 电子科技大学 一种片外可调的弛张型压控振荡器电路
WO2020077558A1 (en) * 2018-10-17 2020-04-23 Micron Technology, Inc. Methods and apparatuses for temperature independent delay circuitry
CN111147048A (zh) * 2018-11-06 2020-05-12 智原微电子(苏州)有限公司 弛缓震荡电路
CN112835409A (zh) * 2019-11-25 2021-05-25 三星电子株式会社 带隙基准电压生成电路
US11257529B2 (en) 2018-09-17 2022-02-22 Micron Technology, Inc. Apparatuses and methods for DRAM wordline control with reverse temperature coefficient delay

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7543253B2 (en) * 2003-10-07 2009-06-02 Analog Devices, Inc. Method and apparatus for compensating for temperature drift in semiconductor processes and circuitry
KR100642915B1 (ko) * 2004-05-06 2006-11-03 주식회사 하이닉스반도체 오실레이터의 기준 클럭주기 측정/트리밍 방법 및 그오실레이터
KR101395777B1 (ko) * 2007-10-29 2014-05-16 삼성전자주식회사 시스템 지연을 보상하는 완화발진기
KR101153574B1 (ko) * 2010-10-12 2012-06-12 서울시립대학교 산학협력단 부궤환회로를 이용한 이완 발진기
US8884718B2 (en) * 2011-08-09 2014-11-11 Si-Ware Systems Method and apparatus to control the LC tank temperature null characteristic in a highly stable LC oscillator
KR101388827B1 (ko) 2012-11-01 2014-04-23 삼성전기주식회사 Pwm 신호 생성회로 및 모터 구동 회로
CN103391045B (zh) * 2013-07-30 2015-11-25 浙江大学 抗工艺涨落的自修调集成电路片上振荡器
TWI557529B (zh) * 2016-01-12 2016-11-11 新唐科技股份有限公司 參考電壓電路
JP6869813B2 (ja) * 2017-05-31 2021-05-12 エイブリック株式会社 弛張型発振器、および弛張型発振器を備えた無線機器

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100527040C (zh) * 2003-02-27 2009-08-12 阿纳洛格装置公司 一种带隙电压参考电路以及用于产生温度曲率校准电压参考的方法
CN100348067C (zh) * 2004-09-02 2007-11-07 萨基姆通讯公司 移动电话和使用该移动电话的方法
CN1787369B (zh) * 2004-12-10 2013-04-03 三菱电机株式会社 半导体电路
CN101626235B (zh) * 2008-07-09 2011-11-02 盛群半导体股份有限公司 一种振荡器操作模式控制方法及装置
CN102356549A (zh) * 2009-03-18 2012-02-15 Nxp股份有限公司 工艺、电压、温度补偿振荡器
CN102024426A (zh) * 2009-09-14 2011-04-20 三星电机株式会社 基准信号发生器及用于lcd背光的pwm控制电路
CN102024426B (zh) * 2009-09-14 2013-09-18 三星电机株式会社 基准信号发生器及用于lcd背光的pwm控制电路
CN102780470B (zh) * 2011-05-10 2015-06-24 Nxp股份有限公司 具有低电流损耗快速响应时间的振荡器结构以及用于操作这种振荡器结构的方法
CN102780470A (zh) * 2011-05-10 2012-11-14 Nxp股份有限公司 具有低电流损耗快速响应时间的振荡器结构以及用于操作这种振荡器结构的方法
US9379691B2 (en) 2011-06-09 2016-06-28 Infineon Technologies Austria Ag Runtime compensated oscillator
CN102820852B (zh) * 2011-06-09 2015-11-04 英飞凌科技奥地利有限公司 用于产生振荡信号的方法和振荡器电路
CN102820852A (zh) * 2011-06-09 2012-12-12 英飞凌科技奥地利有限公司 用于产生振荡信号的方法和振荡器电路
CN103580655B (zh) * 2012-07-24 2017-05-17 飞思卡尔半导体公司 比较器和采用比较器的张弛振荡器
CN103580655A (zh) * 2012-07-24 2014-02-12 飞思卡尔半导体公司 比较器和采用比较器的张弛振荡器
CN108832896B (zh) * 2018-06-25 2021-04-02 电子科技大学 一种片外可调的弛张型压控振荡器电路
CN108832896A (zh) * 2018-06-25 2018-11-16 电子科技大学 一种片外可调的弛张型压控振荡器电路
US11257529B2 (en) 2018-09-17 2022-02-22 Micron Technology, Inc. Apparatuses and methods for DRAM wordline control with reverse temperature coefficient delay
CN112823477A (zh) * 2018-10-17 2021-05-18 美光科技公司 用于温度独立的延迟电路的方法和设备
WO2020077558A1 (en) * 2018-10-17 2020-04-23 Micron Technology, Inc. Methods and apparatuses for temperature independent delay circuitry
US11398815B2 (en) 2018-10-17 2022-07-26 Micron Technology, Inc. Methods and apparatuses for temperature independent delay circuitry
US11929749B2 (en) 2018-10-17 2024-03-12 Micron Technology, Inc. Methods and apparatuses for temperature independent delay circuitry
CN112823477B (zh) * 2018-10-17 2024-04-23 美光科技公司 用于温度独立的延迟电路的方法和设备
CN111147048A (zh) * 2018-11-06 2020-05-12 智原微电子(苏州)有限公司 弛缓震荡电路
CN111147048B (zh) * 2018-11-06 2023-08-18 智原微电子(苏州)有限公司 弛缓震荡电路
CN112835409A (zh) * 2019-11-25 2021-05-25 三星电子株式会社 带隙基准电压生成电路
CN112835409B (zh) * 2019-11-25 2024-04-16 三星电子株式会社 带隙基准电压生成电路

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Publication number Publication date
EP1053596A1 (de) 2000-11-22
JP2003529227A (ja) 2003-09-30
KR20010040690A (ko) 2001-05-15

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