CN1289722C - 用于重掺直拉硅单晶制造的掺杂方法及其掺杂漏斗 - Google Patents
用于重掺直拉硅单晶制造的掺杂方法及其掺杂漏斗 Download PDFInfo
- Publication number
- CN1289722C CN1289722C CN 200310117761 CN200310117761A CN1289722C CN 1289722 C CN1289722 C CN 1289722C CN 200310117761 CN200310117761 CN 200310117761 CN 200310117761 A CN200310117761 A CN 200310117761A CN 1289722 C CN1289722 C CN 1289722C
- Authority
- CN
- China
- Prior art keywords
- funnel
- doping
- adulterating
- antimony
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 35
- 239000010703 silicon Substances 0.000 title claims abstract description 35
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 20
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002019 doping agent Substances 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 17
- 239000011574 phosphorus Substances 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 12
- 239000000945 filler Substances 0.000 claims description 6
- 230000004927 fusion Effects 0.000 claims description 3
- 238000002309 gasification Methods 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 2
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000013459 approach Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 241000209456 Plumbago Species 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
热场尺寸(″) | 掺杂剂种类 | 掺杂方法 | 掺杂效率(%) |
16 | 磷 | 漏斗 | 41 |
钟罩 | 89 | ||
砷 | 漏斗 | 45 | |
钟罩 | 90 | ||
锑 | 漏斗 | 98 | |
钟罩 | 不能掺杂 | ||
18 | 磷 | 漏斗 | 43 |
钟罩 | 92 | ||
砷 | 漏斗 | 49 | |
钟罩 | 91 | ||
锑 | 漏斗 | 98 | |
钟罩 | 不能掺杂 |
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200310117761 CN1289722C (zh) | 2003-12-30 | 2003-12-30 | 用于重掺直拉硅单晶制造的掺杂方法及其掺杂漏斗 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200310117761 CN1289722C (zh) | 2003-12-30 | 2003-12-30 | 用于重掺直拉硅单晶制造的掺杂方法及其掺杂漏斗 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1556255A CN1556255A (zh) | 2004-12-22 |
CN1289722C true CN1289722C (zh) | 2006-12-13 |
Family
ID=34337947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200310117761 Expired - Lifetime CN1289722C (zh) | 2003-12-30 | 2003-12-30 | 用于重掺直拉硅单晶制造的掺杂方法及其掺杂漏斗 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1289722C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106757313A (zh) * | 2016-12-29 | 2017-05-31 | 上海合晶硅材料有限公司 | 超重掺砷晶棒拉制方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101717993B (zh) * | 2009-11-10 | 2011-01-12 | 天津市环欧半导体材料技术有限公司 | 直拉重掺锑单晶的掺杂方法及掺杂装置 |
CN101787566B (zh) * | 2010-03-25 | 2012-04-25 | 杭州海纳半导体有限公司 | 直拉硅单晶的镓元素掺杂方法及所用掺杂装置 |
JP2016501826A (ja) * | 2012-12-31 | 2016-01-21 | エムイーエムシー・エレクトロニック・マテリアルズ・ソシエタ・ペル・アチオニMEMC Electronic Materials, SpA | 単結晶半導体材料の制御されたドーピングのための液体ドーピングシステムおよび方法 |
CN103361731B (zh) * | 2013-06-21 | 2016-01-27 | 东海晶澳太阳能科技有限公司 | 一种掺镓晶体硅中金属镓的使用方法 |
JP6056772B2 (ja) | 2014-01-07 | 2017-01-11 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
TWM484459U (zh) * | 2014-04-18 | 2014-08-21 | Globalwafers Co Ltd | 晶體生長爐的攪拌裝置 |
CN111364098A (zh) * | 2018-12-26 | 2020-07-03 | 有研半导体材料有限公司 | 一种用于重掺直拉单晶的掺杂装置 |
CN109457294A (zh) * | 2018-12-27 | 2019-03-12 | 衢州晶哲电子材料有限公司 | 一种直拉重掺锑硅单晶锑源提纯装置及提纯掺杂方法 |
CN112941617B (zh) * | 2019-12-10 | 2022-09-09 | 有研半导体硅材料股份公司 | 一种用于重掺锑直拉单晶硅的掺杂装置及掺杂方法 |
CN114574946A (zh) * | 2022-02-23 | 2022-06-03 | 中国电子科技集团公司第四十六研究所 | 一种重掺锑硅单晶中锑元素掺杂的方法及掺杂装置 |
CN115058767B (zh) * | 2022-05-30 | 2024-04-23 | 宁夏中晶半导体材料有限公司 | 一种用于mcz法拉制重掺锑单晶的加掺方法和装置 |
-
2003
- 2003-12-30 CN CN 200310117761 patent/CN1289722C/zh not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106757313A (zh) * | 2016-12-29 | 2017-05-31 | 上海合晶硅材料有限公司 | 超重掺砷晶棒拉制方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1556255A (zh) | 2004-12-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1289722C (zh) | 用于重掺直拉硅单晶制造的掺杂方法及其掺杂漏斗 | |
CN102409395B (zh) | 一种直拉硅单晶的镓元素掺杂装置及其掺杂方法 | |
TWI781759B (zh) | 晶體生產方法 | |
CN101717993B (zh) | 直拉重掺锑单晶的掺杂方法及掺杂装置 | |
EP2705178A2 (en) | Growth of a uniformly doped silicon ingot by doping only the initial charge | |
WO2007032799A1 (en) | Method and apparatus to produce single crystal ingot of uniform axial resistivity | |
CN1498988A (zh) | 制造掺杂高挥发性异物的硅单晶的方法 | |
CN102146583B (zh) | 从坩埚中所含的熔体拉伸由硅组成的单晶的方法及由此制得的单晶 | |
CN1337476A (zh) | 直拉硅单晶生长的重掺杂方法 | |
CN101435105A (zh) | 低含氧量硅晶体的制备方法 | |
EP1746186B1 (en) | A method for producing a silicon single crystal | |
CN1289723C (zh) | 用于六英寸及八英寸重掺磷直拉硅单晶制造的熔体上部保温装置 | |
CN210215612U (zh) | 大直径高效n型单晶硅的单晶炉 | |
CN101306817B (zh) | 重掺硅中磷、砷、锑、硼的去除装置 | |
CN202144523U (zh) | 一种提高单晶硅纵向电阻率一致性的装置 | |
CN102703969B (zh) | 低碳准单晶铸锭炉及应用该铸锭炉进行铸锭的方法 | |
CN101173369A (zh) | 一种改进的生长掺杂硅单晶体的方法及其装置 | |
CN102534771A (zh) | 一种磷化镓单晶的生长方法 | |
CN1455028A (zh) | 气相掺杂区熔硅单晶的生产方法 | |
CN102061514B (zh) | 一种气相重掺硼区熔硅单晶的制备方法 | |
JPH03115188A (ja) | 単結晶製造方法 | |
CN1292102C (zh) | 用于八英寸重掺砷硅单晶制造的熔体上部保温装置 | |
CN107604430A (zh) | 低氧含量单晶硅生长方法 | |
CN213652724U (zh) | 连续拉晶单晶炉的热场结构 | |
CN1065105A (zh) | 制备半导体单晶用的双层坩埚 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: ZHEJIANG JINRUIHONG TECHNOLOGY CO., LTD. Free format text: FORMER NAME: NINGBO LILI ELECTRONICS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: 315800 0125-3 block, Ningbo Free Trade Zone, Zhejiang, China Patentee after: Zhejiang Jinruihong Technology Co.,Ltd. Address before: 315800 0125-3 block, Ningbo Free Trade Zone, Zhejiang, China Patentee before: Ningbo Lili Electronic Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220608 Address after: 324000 green industrial gathering area, Quzhou, Zhejiang Province, No. 52, Panlong South Road. Patentee after: JRH TECHNOLOGY (QUZHOU) Co.,Ltd. Address before: 315800 plot 0125-3, Ningbo Free Trade Zone, Zhejiang Province Patentee before: Zhejiang Jinruihong Technology Co.,Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20061213 |