CN1277262C - 相变光记录媒体 - Google Patents

相变光记录媒体 Download PDF

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CN1277262C
CN1277262C CN02101696.8A CN02101696A CN1277262C CN 1277262 C CN1277262 C CN 1277262C CN 02101696 A CN02101696 A CN 02101696A CN 1277262 C CN1277262 C CN 1277262C
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protective seam
phase
carbonide
recording layer
mentioned
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CN1372260A (zh
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稻生俊雄
饭草仁志
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Tosoh Corp
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Tosoh Corp
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    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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  • Metallurgy (AREA)
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Abstract

提供一种高线速度时的擦除率高、记录灵敏度更高、OW周期特性及耐环境性优良的相变光记录媒体。利用记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其中，保护层由下述膜来形成，该膜由Ta或Al的氧化物、和至少1种碳化物构成，碳化物的含量是1～40mol%。

Description

相变光记录媒体
技术领域
本发明涉及可改写的光信息记录媒体中、通过激光束等使记录层产生相变来进行信息的记录、再生及擦除的相变光记录媒体。
背景技术
相变型光记录盘是可改写的光记录盘，通过记录层的可逆的相变(多在晶体-非晶体间)来记录信息。可以通过单头在单层记录膜上进行光调制盖写，并且通过反射率随着相变的变化来读取信号，所以具有与CD-ROM等现有光记录盘之间的兼容性高等特征，因此作为可改写的光记录盘，近年来被广泛地研究开发，被应用于可改写的DVD。
相变型光记录盘等相变光记录媒体一般是在记录层的晶相(擦除状态)上通过激光束形成非晶相的记录标记来进行记录，通过检测晶相和非晶相之间的反射率之差来得到再生信号。此外，通过在非晶化的强度(峰值功率)和结晶的强度(偏置功率)之间对信号记录时的激光束的强度进行强度调制(参照图1)，可以以单光束、单层记录膜的组合来进行光调制盖写(直接盖写)，能够得到大容量而且高传送速率的记录盘。
在这样的相变光记录媒体中，特别是，由重写时的擦除残留引起的擦除比低落的防止、以及反复记录次数的提高成为应要解决的最重要技术问题。作为解决该技术问题的发明，在特开平7-161072号公报中，提出了一种光信息记录媒体，记录层至少包括Ag、In、Sb和Te；在记录层和反射散热层之间的保护层由多种化合物的混合物构成、构成该保护层的化合物之中的至少一种是从AlN、BN、SiC和C选择的至少一种，另一种是从SiO2、Al2O3和Ta2O5选择的至少一种。
相变光记录媒体可以如上所述进行直接盖写(DOW)。然而，如果为了实现高速传送而加快线速度，则在盖写(OW)后，初始信号不会完全消失，产生所谓的漏擦，擦除率恶化。
此技术问题，并没有被上述特开平7-161072号公报中所建议的光信息记录媒体充健解决。
发明内容
本发明的目的在于提供一种在高线速度时减少漏擦、提高擦除率、记录灵敏度更高、OW周期耐久性及耐气候性也好的相变光记录媒体。
本发明人等鉴于上述现状，反复潜心钻研后发现，在将包含保护层及记录层的多层膜形成于基板上、并利用该记录层在晶相和非晶相之间的可逆的相变来进行信息的记录、擦除的相变光记录媒体中，通过将保护层做成由特定成分构成的膜，能提高高线速度时的擦除率、耐久性，进而，通过使保护层的成分比处于特定的范围内，能进一步提高上述效果，从而完成本发明。
即，本发明涉及一种相变光记录媒体，在基板上形成包含保护层及记录层的多层膜，利用该记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其特征在于，上述记录层由Ge、Sb和Te的合金、或以该合金为主成分的材料构成的GeSbTe系薄膜构成，上述保护层由Ta的氧化物、和至少1种碳化物构成，该保护层的上述碳化物的含量在1mol％以上、40mol％以下，而且上述保护层与上述记录层相接来形成。
此外，本发明涉及一种相变光记录媒体，在基板上形成包含保护层及记录层的多层膜，利用该记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其特征在于，上述记录层由Ge、Sb和Te的合金、或以该合金为主成分的材料构成的GeSbTe系薄膜构成，上述保护层由Al的氧化物、和至少1种碳化物构成，该保护层的上述碳化物的含量在1mol％以上、40mol％以下，而且上述保护层与上述记录层相接来形成。
此外，本发明涉及一种相变光记录媒体，在基板上形成包含保护层及记录层的多层膜，利用该记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其特征在于，上述保护层含有Ta的氧化物、至少1种碳化物、以及从由In、Si、Ti、Hf及Zr构成的组中选出的元素的氧化物的1种或1种以上，该保护层的上述碳化物的含量在1mol％以上、40mol％以下，而且上述保护层与上述记录层相接来形成。
再者，本发明涉及一种相变光记录媒体，在基板上形成包含保护层及记录层的多层膜，利用该记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其特征在于，上述保护层含有Al的氧化物、至少1种碳化物、以及从由In、Si、Ti、Hf及Zr构成的组中选出的元素的氧化物的1种或1种以上，该保护层的上述碳化物的含量在1mol％以上、40mol％以下，而且上述保护层与上述记录层相接来形成。
上述保护层最好包含从Si、Ti、Ta、Nb的碳化物中选出的1种或1种以上的碳化物。此外，上述相变光记录媒体的记录层最好由Ge、Sb及Te的合金、或以该合金为主成分的材料构成。
再者，本发明的相变光记录媒体的特征在于，在激光束直径为d(＝λ/NA，λ是激光波长，NA是物镜的数值孔径)、线速度为v时d/v的值低于1.5×10-7秒(d/v＜1.5×10-7[s])的高传送速度范围内使用。
附图的简单说明
图1是记录再生装置的激光功率的关系图。
图2是本发明的相变光记录媒体的一例的结构的部分剖面图。
图3是本发明的实施例及比较例的相变光记录媒体的结构的部分剖面图。
图4是0.6μm的标记记录使用的激光功率的关系图。
图5是实施例1及比较例1的样本的擦除率对线速度的依赖性的图。
图6是实施例1的样本的CNR对峰值功率的依赖性的图。
                 实施发明的最好形式
以下，进一步详细说明本发明。
图2是本发明的相变光记录媒体的一例的结构的部分剖面图。图2的相变光记录媒体在基板21上叠层有第一保护层22、记录层23、第二保护层24、反射层25。
作为基板21，只要在使用的激光的波长范围内足够透明，满足机械特性等作为媒体基板的特性即可，没有特别的限制，可以使用玻璃、聚碳酸酯、非晶态聚烯烃等。
第一保护层22、及第二保护层24由下述膜构成，该膜由Ta的氧化物或Al的氧化物、和至少1种碳化物构成，碳化物的含量为1～40mol％。用只含Ta的氧化物或Al的氧化物的保护层也可以得到足够高的擦除率特性，但是通过使其含有碳化物，能够在保持高擦除率特性的同时，提高记录灵敏度，高线速度时的记录再生擦除特性优良。上述保护层最好包含从Si、Ti、Ta、Nb的碳化物中选出的1种以上的碳化物。保护层中包含的碳化物的总量处于1mol％～40mol％的范围内，较好的是处于5mol％～35mol％的范围内，更好的是处于10mol％～30mol％的范围内。如果碳化物的含量超过50mol％，则膜的消光系数(k)会增大，透明度恶化，作为相变光记录媒体是不现实的。
此外，也可以将下述膜作为第一保护层22、及第二保护层24，该膜含有Ta的氧化物或Al的氧化物、至少1种碳化物、以及从由In、Si、Ti、Hf及Zr构成的组中选出的元素的氧化物的1种以上，碳化物的含量是1～40mol％。
通过使保护层含有1种以上的In、Si、Ti、Hf、Zr的氧化物，能进一步促进提高记录灵敏度的效果。
在使用含有Ta的氧化物或Al的氧化物、至少1种碳化物、以及从由In、Si、Ti、Hf及Zr构成的组中选出的元素的氧化物的1种以上的保护层的情况下，该保护层也最好包含从Si、Ti、Ta、Nb的碳化物中选出的1种以上的碳化物。保护层中包含的碳化物的总量处于1mol％～40mol％的范围内，较好的是处于5mol％～35mol％的范围内，更好的是处于10mol％～30mol％的范围内。如果碳化物的含量超过50mol％，则膜的消光系数(k)会增大，透明度恶化，作为相变光记录媒体是不现实的。
记录层23可以使用GeSbTe系薄膜、InSbTe系薄膜等具有可逆相变的膜，但是最好使用Ge、Sb及Te的合金、或以该合金为主成分的材料。至少一个保护层与记录层相接来形成。通过将记录层和上述保护层相接来形成，能在接触面(界面)上促进晶核生成，使结晶更快地进行。作为记录层，可以使用GeSbTe系薄膜、InSbTe系薄膜等，但是由于GeSbTe系薄膜的结晶是以核生成为主体来发生的，所以特别适于作为具有上述保护层的本发明的相变光记录媒体的记录层。
反射层25由使用Al合金或Ag合金、在激光的波长范围内反射率高的膜构成。
上述第一、第二保护层除了保护记录层的作用之外，还具有提高记录层的光吸收效率、或者增大记录前后的反射光的变化量的作用，所以它们的厚度应考虑使用的激光波长、和记录层的膜厚等来最佳地设计。
在本发明中，除了上述结构之外，也可以只在第一保护层、或第二保护层中使用本发明的保护层，而另一个形成并使用由别的物质构成的保护层。
以上的第一、第二保护层、记录层、反射层可以通过DC溅射法、RF溅射法、真空蒸镀法等真空成膜技术来成膜。
进而，在形成这些层后，也可以在其上按照需要形成由合成树脂等构成的保护涂层。
此外，本发明的保护层也可以使用于膜形成顺序相反的、所谓的表面再生型记录媒体。
[实施例]
以下，根据实施例来进一步详细说明本发明，但是本发明不仅局限于这些实施例。
(实施例1、比较例1)
如下所示，制作图3所示结构的相变光记录媒体。在以1.4μm为间距而形成0.7μm宽的槽的聚碳酸酯制的盘状基板31上，通过Ta2O5目标和SiC目标的同时RF溅射来形成由Ta2O5和SiC构成的第一保护层32(膜厚：100nm)。然后，通过Ge2Sb2Te5合金目标的DC溅射来形成由Ge2Sb2Te5构成的记录层33(膜厚：20nm)。进而，通过Ta2O5目标和SiC目标的同时RF溅射来形成由Ta2O5和SiC构成的第二保护层34(膜厚：20nm)。然后，作为反射层35，形成Al-3wt％Cr合金膜(膜厚：150nm)。在其上，作为保护涂层36，形成10μm厚的紫外线硬化树脂，完成相变光记录媒体。
用以上结构，通过改变形成保护层时的Ta2O5目标投入功率和SiC目标投入功率之比，来制作具有SiC的含量为1～40mol％的6种组成的保护层的相变光记录媒体(实施例1样本1～6)。此外，为了比较，同时制作具有SiC的含量分别为0、50、70mol％的保护层的相变光记录媒体(比较例1样本1～3)。
(实施例2、比较例2)
除了用Al2O3来取代第一保护层、第二保护层的Ta2O5以外，用与实施例1同样的方法来制作具有SiC的含量为1～40mol％的6种组成的保护层的相变光记录媒体(实施例2样本1～6)。此外，为了比较，同时制作具有SiC的含量分别为0、50、70mol％的保护层的相变光记录媒体(比较例2样本1～3)。
(实施例3)
除了分别添加形成10mol％的TiC(实施例3样本1)、10mol％的TaC(实施例3样本2)、10mol％的Nb2C(实施例3样本3)来取代第一保护层、第二保护层的SiC以外，用与实施例1同样的方法来制作相变光记录媒体。
(实施例4)
除了用Al2O3来取代第一保护层、第二保护层的Ta2O5以外，用与实施例3同样的方法来制作相变光记录媒体(实施例4样本1～3)。
(实施例5)
除了用在Ta2O5中添加10mol％的SiC所得的膜来形成第一保护层、用ZnS-20mol％SiO2来形成第二保护层以外，用与实施例1同样的方法来制作相变光记录媒体。
(实施例6)
除了用ZnS-20mol％SiO2来形成第一保护层、用在Ta2O5中添加10mol％的SiC所得的膜来形成第二保护层以外，用与实施例1同样的方法来制作相变光记录媒体。
(实施例7)
除了基板上的膜形成顺序为反射层(膜厚：150nm)、第一保护层(膜厚：20nm)、记录层(膜厚：20nm)、第二保护层(膜厚：100nm)、在其上形成0.1mm的保护涂层以外，用与实施例1同样的方法来形成逆结构的表面再生型相变光记录媒体。
(比较例3)
如下所示，制作图3所示结构的相变光记录媒体。在以1.4μm为间距而形成0.7μm宽的槽的聚碳酸酯制的盘状基板31上，通过ZnS-20mol％SiO2目标的RF溅射来形成由ZnS和SiO2构成的第一保护层32(膜厚：100nm)。然后，通过Ge2Sb2Te5合金目标的DC溅射来形成由Ge2Sb2Te5构成的记录层33(膜厚：20nm)。进而，作为第二保护层34，通过ZnS-20mol％SiO2目标的RF溅射来形成由ZnS和SiO2构成的膜(膜厚：20nm)。然后，作为反射层35，形成Al-3wt％Cr合金膜(膜厚：150nm)。在其上，作为保护涂层36，形成10μm厚的紫外线硬化树脂，完成相变光记录媒体，
使用初始化装置对实施例1～6及比较例1～3的相变光记录媒体进行记录层的初始结晶。
接着，在记录层结晶所得的区域的轨道上，以线速度6m/sec来记录0.6μm长的非晶态标记(记录间距：1.2μm，激光波长：680nm，物镜NA：0.55)。在该记录时，使用图4所示的附加了截止脉冲的激光调制图案，使截止脉冲功率(Poff)及再生功率(Pr)为1mW，而峰值功率的宽度为50ns，截止脉冲的宽度为33ns。使底值功率(Pb)为5mW，改变峰值功率(Pp)来记录非晶态标记，将CNR最大的Pp作为最佳Pp(Pp0)。接着，使Pb＝5mW、Pp＝Pp0来记录非晶态标记，照射各种功率的激光束来擦除非晶态标记。此时，将擦除前后的载波电平之差测定为擦除率，将擦除率最大的激光功率作为最佳Pb(Pb0)。接着，使Pp为(PP0-1)mW、Pb为(Pb0-1)mW来记录非晶态标记(标记长度：0.6μm)，用(Pb0-1)mW的激光进行擦除。对每1个轨道进行20次该记录-擦除(以下，将该工序称为初始化处理)。
对初始化处理过的轨道，以线速度6m/sec，以Pr＝1mW、Poff＝1mW、Pp＝Pp0、Pb＝Pb0的激光功率来记录0.6μm长的非晶态标记(记录间距：1.2μm)。以各种线速度、擦除功率来擦除该记录标记，将擦除前后的载波电平之差测定为擦除率。
实施例1及比较例1的各保护层组成的样本和比较例3的样本的擦除率对线速度的依赖性示于图5。Ta2O5和SiC的组成比根据同条件下成膜的保护层的荧光X线分析来求。从图5可知，本发明的保护层与比较例相比，在高线速度范围内(在激光束直径为d(＝λ/NA)、线速度为v时d/v＜1.5×10-7[s]的范围内)得到高的擦除率。
只含Ta2O5的保护层的样本(比较例1样本1)、及含有10mol％的SiC的Ta2O5保护层的样本(实施例1样本3)的CNR对峰值功率的依赖性(以下，称为功率曲线)示于图6。将图6中的功率曲线与CNR＝30dB相交的交点定义为各个样本的记录灵敏度(Pth)。
实施例1～4、比较例1、2的样本的擦除率、及Pth的测定值示于表1～4。而实施例5、6、及比较例3的样本的擦除率(8m/s)的测定结果示于表5。擦除率只要在25dB以上，在实用方面就没有问题，如果在28dB以上则更好。在SiC的量为1～40％的范围内在擦除率特性、记录灵敏度的平衡点上具有良好的特性，在10～30％的范围内特别良好。在50％以上则记录灵敏度倾向于降低。
此外，对相同样本，以Pr＝1mW、Poff＝1mW、Pp＝Pp0、Pb＝Pb0的激光功率交替记录0.6μm长的非晶态标记(记录间距：1.2μm)和1.6μm长的非晶态标记(记录间距：3.2μm)来进行OW周期测试的结果是，确认实施例1～6的各个样本与比较例1、2的样本相比，周期耐久性提高了。
进而，将相同样本在85℃、95％RH的环境下保存250个小时来进行加速环境试验的结果是，确认实施例1～6的各个样本与比较例1、2的样本相比，耐气候性提高了。
此外，对实施例7的样本进行记录再生测试，确认得到良好的CNR、及擦除率，能用作表面再生型记录媒体。
(实施例8、比较例4)
如下所示，制作图3所示结构的相变光记录媒体。在以1.4μm为间距而形成0.7μm宽的槽的聚碳酸酯制的盘状基板31上，通过在Ta2O5目标上加载SiC材料及SiO2材料进行RF溅射来形成由Ta2O5、SiC和SiO2构成的第一保护层32(膜厚：100nm)。然后，通过Ge2Sb2Te5合金目标的DC溅射来形成由Ge2Sb2Te5构成的记录层33(膜厚：20nm)。进而，通过在Ta2O5目标上加载SiC材料及SiO2材料进行RF溅射来形成由Ta2O5、SiC和SiO2构成的第二保护层34(膜厚：20nm)。然后，作为反射层35，形成Al-3wt％Cr合金膜(膜厚：100nm)。在其上，作为保护涂层36，形成10μm厚的紫外线硬化树脂，完成相变光记录媒体。
用以上结构，通过改变形成保护层时的Ta2O5目标上的SiC材料和SiO2材料的数量，来制作具有各种组成的保护层的相变光记录媒体(实施例8样本1～8)。此外，为了比较，同时制作具有SiC的含量为50mol％、SiO2的含量为10mol％的保护层的相变光记录媒体(比较例4)。
(实施例9)
除了分别含有10mol％的ZrO2(实施例9样本1)、10mol％的TiO2(实施例9样本2)、10mol％的HfO2(实施例9样本3)、10mol％的In2O3(实施例9样本4)来取代第一保护层及第二保护层的SiO2、使SiC的含量为30mol％以外，用与实施例8同样的方法来制作相变光记录媒体。
(实施例10、比较例5)
除了用Al2O3来取代第一保护层、第二保护层的Ta2O5以外，用与实施例8同样的方法来制作相变光记录媒体(实施例10样本1～8)。此外，为了比较，同时制作具有SiC的含量为50mol％、SiO2的含量为10mol％的保护层的相变光记录媒体(比较例5)。
(实施例11)
除了用Al2O3来取代第一保护层、第二保护层的Ta2O5以外，用与实施例9同样的方法来制作相变光记录媒体(实施例11样本1～4)。
(实施例12)
除了使记录层为Ge1Sb2Te4(实施例12样本1)、Ge1Sb4Te7(实施例12样本2)来取代Ge2Sb2Te5、使SiC含量为10mol％以外，用与实施例1同样的方法来制作相变光记录媒体。
(实施例13)
使记录层为AgInSbTe合金(Ag：4原子％，In：6原子％，Sb：61原子％，Te：29原子％)来取代Ge2Sb2Te5、使SiC含量为10mol％以外，用与实施例1同样的方法来制作相变光记录媒体。
使用初始化装置对实施例8～13、及实施例4、5的相变光记录媒体进行记录层的初始结晶。
接着，在记录层结晶所得的区域的轨道上，以线速度6m/sec来记录0.6μm长的非晶态标记(记录间距：1.2μm，激光波长：680nm，物镜NA：0.55)。在该记录时，使用图4所示的附加了截止脉冲的激光调制图案，使截止脉冲功率(Poff)及再生功率(Pr)为1mW，而峰值功率的宽度为50ns，截止脉冲的宽度为33ns。使偏置功率(Pb)为5mW，改变峰值功率(Pp)来记录非晶态标记，将CNR最大的Pp作为最佳Pp(Pp0)。接着，使Pb＝5mW、Pp＝Pp0来记录非晶态标记，照射各种功率的激光束来擦除非晶态标记。此时，将擦除前后的载波电平之差测定为擦除率，将擦除率最大的激光功率作为最佳Pb(Pb0)。接着，使Pp为(Pp0-1)mW、Pb为(Pb0-1)mW来记录非晶态标记(标记长度：0.6μm)，用(Pb0-1)mW的激光进行擦除。对每1个轨道进行20次该记录-擦除。
对初始化处理过的轨道，使Pb＝Pb0mW、线速度为6m/sec来记录非晶态标记(标记长度：0.6μm)，测定CNR对记录功率(Pp)的依赖性。此外，对初始化处理过的轨道，以线速度6m/sec，以Pr＝1mW、Poff＝1mW、Pp＝Pp0、Pb＝Pb0的激光功率来记录0.6μm长的(记录间距：1.2μm)。以各种线速度、擦除功率来擦除该记录标记，将擦除前后的载波电平之差测定为擦除率。
实施例8～11的样本的擦除率、及Pth的测定结果分别示于表6～9。为了比较，图6还同时示出实施例1、比较例1、4的样本的测定结果，表8还同时示出实施例2、比较例2、5的样本的测定结果。此外，使线速度为12m/s而得到的实施例12、13的样本的擦除率的测定结果示于表10。为了比较，表10还同时示出实施例1样本3、比较例3的样本的测定结果。从这些表可知，通过添加Si、Zr、Ti、Hf、In的氧化物，可促进提高记录灵敏度的效果。此外，可知，与AgInSbTe记录层相比，GeSbTe记录层的擦除率高。
此外，对实施例8～11的样本，以Pr＝1mW、Poff＝1mW、Pp＝Pp0、Pb＝Pb0的激光功率来进行0.6μm长的非晶态标记(记录间距：1.2μm)的直接盖写(DOW)周期测试的结果是，确认各个样本与比较例1、2的样本相比，周期耐久性提高了。
进而，将实施例8～11的样本在85℃、95％RH的环境下保存250个小时来进行加速环境试验的结果是，确认各个样本与比较例1、2的样本相比，耐气候性提高了。
                     发明的效果
根据本发明，能得到一种在高线速度时漏擦少、擦除率提高、记录灵敏度更高、0W周期特性及耐气候性好的相变光记录媒体。因此，根据本发明，能制作传送速率高、耐久性高的相变型光盘。
【表1】
  样本   SiC量[mol％]   擦除率[dB]   Pth[mW]
  比较例1-1   0   31.4   10.3
  实施例1-1   1   29.5   9.8
  实施例1-2   5   29.0   9.7
  实施例1-3   10   28.5   9.3
  实施例1-4   30   28.9   8.5
  实施例1-5   35   28.5   8.7
  实施例1-6   40   28.0   8.9
  比较例1-2   50   26.5   9.9
  比较例1-3   70   25.0   10.3
【表2】
  样本   SiC量[mol％]   擦除率[dB]   Pth[mW]
  比较例2-1   0   31.4   11.5
  实施例2-1   1   29.7   9.9
  实施例2-2   5   29.5   9.6
  实施例2-3   10   28.7   9.4
  实施例2-4   30   28.3   8.9
  实施例2-5   35   28.0   9.0
  实施例2-6   40   27.8   9.1
  比较例2-2   50   26.0   9.9
  比较例2-3   70   24.5   11.0
【表3】
  样本   碳化物   擦除率[dB]   Pth[mW]
  实施例3-1   TiC   28.3   9.2
  实施例3-2   TaC   27.8   9.5
  实施例3-3   Nb2C   28.0   9.3
【表4】
  样本   碳化物   擦除率[dB]   Pth[mW]
  实施例4-1   TiC   28.5   9.5
  实施例4-2   TaC   28.3   9.7
  实施例4-3   Nb2C   28.2   9.6
【表5】
  样本   第一保护层   第二保护层   最大擦除率[mW]
  实施例5   Ta2O5+SiC   ZnS-SiO2   33
  实施例6   ZnS-SiO2   Ta2O5+SiC   36
  比较例3   ZnS-SiO2   ZnS-SiO2   25
                                                (线速度：8m/s)
【表6】
  样本   SiC[mol％]   SiO2[mol％]   擦除率[dB]   Pth[mW]
  比较例1   0   0   31.4   10.3
  实施例1-1   1   0   29.5   9.8
  实施例1-2   5   0   29.0   9.7
  实施例1-3   10   0   28.5   9.3
  实施例8-1   10   5   28.5   9.1
  实施例8-2   10   10   28.3   8.7
  实施例8-3   10   20   28.2   8.3
  实施例8-4   10   30   28.2   8.0
  实施例8-5   10   40   28.0   7.5
  实施例8-6   20   10   28.5   8.4
  实施例8-7   30   10   28.6   8.5
  实施例8-8   40   10   27.8   8.8
  比较例4   50   10   26.2   9.7
【表7】
  样本   氧化物   擦除率[dB]   Pth[mW]
  实施例9-1   ZrO2   28.4   8.1
  实施例9-2   TiO2   27.8   8.0
  实施例9-3   HfO2   28.0   7.8
  实施例9-4   In2O3   28.2   7.8
【表8】
  样本   SiC[mol％]   SiO2[mol％]   擦除率[dB]   Pth[mW]
  比较例2   0   0   31.4   11.5
  实施例2-1   1   0   29.7   9.9
  实施例2-2   5   0   29.5   9.6
  实施例2-3   10   0   28.7   9.4
  实施例10-1   10   5   28.4   9.1
  实施例10-2   10   10   28.2   8.8
  实施例10-3   10   20   28.0   8.4
  实施例10-4   10   30   28.0   8.0
  实施例10-5   10   40   27.5   7.5
  实施例10-6   20   10   28.0   8.5
  实施例10-7   30   10   28.0   8.7
  实施例10-8   40   10   27.5   9.0
  比较例5   50   10   26.0   9.9
【表9】
  样本   氧化物   擦除率[dB]   Pth[mW]
  实施例11-1   ZrO2   28.2   8.3
  实施例11-2   TiO2   27.6   8.2
  实施例11-3   HfO2   27.8   8.0
  实施例11-4   In2O3   28.0   7.9
【表10】
  样本   保护层   记录层   擦除率[dB]
  实施例1-3   Ta2O5+SiC   Ge2Sb2Te5   28.5
  实施例12-1   Ta2O5+SiC   Ge1Sb2Te4   29.1
  实施例12-2   Ta2O5+SiC   Ge1Sb4Te7   28.8
  实施例13   Ta2O5+SiC   AgInTeSb   21.2
  比较例3   ZnS-SiO2   Ge2Sb2Te5   15.1
                                                  (12m/s)

Claims (10)

1、一种相变光记录媒体，在基板上形成包含保护层及记录层的多层膜，利用该记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其特征在于，上述记录层由Ge、Sb和Te的合金、或以该合金为主成分的材料构成的GeSbTe系薄膜构成，上述保护层由Ta的氧化物、和至少1种碳化物构成，该保护层的上述碳化物的含量在1mol％以上、40mol％以下，而且上述保护层与上述记录层相接来形成。
2、如权利要求1所述的相变光记录媒体，其特征在于，保护层包含从Si、Ti、Ta、Nb的碳化物中选出的1种或1种以上的碳化物。
3、一种相变光记录媒体，在基板上形成包含保护层及记录层的多层膜，利用该记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其特征在于，上述记录层由Ge、Sb和Te的合金、或以该合金为主成分的材料构成的GeSbTe系薄膜构成，上述保护层由Al的氧化物、和至少1种碳化物构成，该保护层的上述碳化物的含量在1mol％以上、40mol％以下，而且上述保护层与上述记录层相接来形成。
4、如权利要求3所述的相变光记录媒体，其特征在于，保护层包含从Si、Ti、Ta、Nb的碳化物中选出的1种或1种以上的碳化物。
5、一种相变光记录媒体，在基板上形成包含保护层及记录层的多层膜，利用该记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其特征在于，上述保护层含有Ta的氧化物、至少1种碳化物、以及从由In、Si、Ti、Hf及Zr构成的组中选出的元素的氧化物的1种或1种以上，该保护层的上述碳化物的含量在1mol％以上、40mol％以下，而且上述保护层与上述记录层相接来形成。
6、如权利要求5所述的相变光记录媒体，其特征在于，保护层包含从Si、Ti、Ta、Nb的碳化物中选出的1种或1种以上的碳化物。
7、一种相变光记录媒体，在基板上形成包含保护层及记录层的多层膜，利用该记录层在晶相和非晶相之间的可逆的相变，来进行信息的记录、擦除，其特征在于，上述保护层含有Al的氧化物、至少1种碳化物、以及从由In、Si、Ti、Hf及Zr构成的组中选出的元素的氧化物的1种或1种以上，该保护层的上述碳化物的含量在1mol％以上、40mol％以下，而且上述保护层与上述记录层相接来形成。
8、如权利要求7所述的相变光记录媒体，其特征在于，保护层包含从Si、Ti、Ta、Nb的碳化物中选出的1种或1种以上的碳化物。
9、如权利要求5～8中任一项所述的相变光记录媒体，其特征在于，记录层由Ge、Sb及Te的合金、或以该合金为主成分的材料构成。
10、如权利要求1～8中任一项所述的相变光记录媒体，其特征在于，在记录层上的激光束直径为d(＝λ/NA，λ是激光波长，NA是物镜的数值孔径)、线速度为v时d/v＜1.5×10-7[s]的条件下使用。
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