CN1276624A - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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CN1276624A
CN1276624A CN00118820A CN00118820A CN1276624A CN 1276624 A CN1276624 A CN 1276624A CN 00118820 A CN00118820 A CN 00118820A CN 00118820 A CN00118820 A CN 00118820A CN 1276624 A CN1276624 A CN 1276624A
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阿久津恭志
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Abstract

在通过热固化性粘结剂将半导体元件粘结在布线板上来制造半导体器件的情况下,可不残留空隙地使粘结剂固化,可以实现良好的连接可靠性。在通过含有以热固性树脂作为主要成分的粘结剂,进行加热加压处理将半导体元件连接在布线板上的半导体器件的制造方法中,首先按除去粘结剂中的空隙的第一条件(压力=P1,温度=T1)进行加热加压处理,接着,按使热固化性树脂彻底固化的第二条件(压力=P2,温度=T2)进行加热加压处理(但是,与第一条件的压力P1相比,将第二条件的压力P2设定为低压)。

Description

半导体器件的制造方法
本发明涉及用热固性粘结剂将裸芯片、芯片尺寸封装、IC模块等半导体元件封装在布线板上的半导体器件。
在将裸IC芯片等半导体元件接合在布线板上的情况下，在布线板和半导体元件之间配有以环氧树脂等为主要成分的液状或薄膜状的热固化性绝缘粘结剂，用配有加热装置的粘接器具通过加热加压半导体元件进行接合。
但是，在有微细导体图形的布线板上接合配有微细凸起的半导体元件时，如果在固化的粘结剂中残存空隙，那么存在粘结力下降，相对于耐湿试验和耐热冲击试验等的连接可靠性下降等问题。因此，在粘结剂中尽量不残存这种空隙，而且设定加热加压条件，以便可以确保确实的粘结力。
作为这样的加热加压条件，可列举出将温度、压力和时间因素分别设定为最佳固定数值的单步骤条件(例如，温度＝180℃固定，平均一片IC芯片的压力＝10kg/cm2固定，时间＝20秒固定)，和压力固定下使温度分布图变化的条件，特别是使温度两阶段地上升的双步骤条件(例如，压力＝10kg/cm2固定下，温度＝100℃/时间＝10秒→温度＝200℃/时间＝10秒)。
但是，在上述单步骤条件和压力固定下使温度分布图变化的双步骤条件中，存在不能充分除去粘结剂中的空隙的问题。
本发明的目的在于解决以上的以往技术的问题，在通过热固性粘结剂将半导体元件接合在布线板上来制造半导体器件的情况下，可以不残存空隙地使粘结剂固化，可以实现良好的连接可靠性。
本发明人着眼于以往未曾尝试的压力分布图的变化，首先，按某个程度的高压力进行加压，主要除去粘结剂中的空隙，然后通过按低于该压力的压力进行加压，进行热固化性树脂的彻底固化，发现可以极大地抑制在固化的粘结剂中残存的空隙，获得良好的连接可靠性，从而完成了本发明。
就是说，本发明提供半导体器件的制造方法，通过含有以热固性树脂作为主要成分的粘结剂，进行加热加压处理将半导体元件连接在布线板上，其特征在于，按除去粘结剂中的空隙的第一条件(压力＝P1，温度＝T1)进行加热加压处理，然后，按使热固化性树脂彻底固化的第二条件(压力＝P2，温度＝T2)进行加热加压处理，并且与第一条件的压力P1相比，将第二条件的压力P2设定为低压。
图1是表示本发明制造方法中的压力分布图变化的说明图。
图2是表示将半导体元件装载在布线板上时的加热加压条件变化的说明图。
本发明是通过含有以热固性树脂作为主要成分的粘结剂，利用加热加压处理将半导体元件连接在布线板上的半导体器件的制造方法。
在本发明中，加热加压时的条件由除去粘结剂中的空隙的第一条件(压力＝P1，温度＝T1)和随后实施的使热固化性树脂彻底固化的第二条件(压力＝P2，温度＝T2)构成，并且第二条件的压力P2比第一条件的压力P1设定得低。这样，通过按主要为了除去粘结剂中空隙的某个程度的高压力(P1)进行加压，然后按比该压力低的压力(P2)进行加压，进行热固化性树脂的彻底固化，可以极大地抑制固化的粘结剂中残存的空隙，可以获得良好的连接可靠性。与P2相比，将P1设定成高压的理由基于以下考虑。
就是说，为了从布线板和半导体元件之间的粘结剂中向外部挤压残留在布线板微细图形之间的空隙，如果粘结剂的溶融粘度过低，那么由于不容易挤压空隙，所以必须在粘结剂的溶融粘度比较高的期间挤压空隙。因此，必须设定大压力(加热加压的第一条件)。另一方面，在挤压空隙后，在使粘结剂中的热固化树脂彻底固化时，如果压力过高，那么由于因树脂固化产生收缩和对半导体元件的焊盘集中的压力，所以在布线板的微细图形上产生变形。因此，在本发明中，P2比P1设定得低。
在本发明中，作为加热加压的第一条件的压力P1和第二条件的压力P2的压力分布图图形，可列举出维持P1＞P2(＞0)关系的阶梯状图形(图1(a))、直线状图形(图1(b))、曲线状图形(图1(c)、(d))等。其中，阶梯状图形(图1(a))在高效率除去空隙方面较好。此外，也可以组合这些图形作为压力分布图(例如，参照图1(e))。
在本发明的制造方法中，加热加压的温度条件(即第一条件的T1和第二条件的T2)也可以设定得与以往相同。例如，可以将压力设定为图2(a)所示那样的分布图，并且使温度恒定(T1＝T2)。特别是为了高效率地除去空隙，如图2(b)所示，由于粘结剂的温度T1下的溶融粘度与温度T2下的彻底固化处理初期阶段的溶融粘度相比显示某种程度的高溶融粘度较好，所以如图2(b)所示的T1＜T2的条件下，可以将压力分布图设定成阶梯状。
再有，本发明制造方法中的P1、P2、T1、T2和加热加压时间的具体数值范围根据使用的粘结剂种类有所不同，但在粘结剂为环氧树脂系的情况下，例如可以将第一条件设定为p1＝5～15kgf/cm2、T1＝80～120℃、5～15秒，将第二条件设定为p2＝0.5～3kgf/cm2、T2＝180～220℃、5～15秒。
在本发明的制造方法中，作为含有以热固化性树脂作为主要成分的粘结剂，可以使用将半导体元件装载在布线板上时使用的以往的含有一般热固化性树脂的粘结剂。该粘结剂可以使用按液状、膏状或薄膜状供给的粘结剂。此外，可以使用含有导电性颗粒的各向异性导电粘结剂，也可以使用不含有导电性颗粒的绝缘性粘结剂。
此外，作为布线板，可以使用与以往相同的布线板。作为半导体元件，也可以使用公知的裸芯片、芯片尺寸封装、IC模块等。
按照以上说明的本发明的制造方法，例如在用通常的粘结剂将裸芯片连接在布线板上的情况下，由于加热加压的初期压力高，所以可以无空隙连接。此外，由于使粘结剂彻底固化的压力相对低于加热加压的初期压力，所以可以极大地抑制布线图形的变形。因此，按照本发明的制造方法，可提供半导体元件高可靠性地连接在布线板上的半导体器件。
【实施例】
下面，利用以下的实施例具体地说明本发明。
实施例1～6，比较例1和2
使用裸芯片封装使用的薄膜状各向异性导电粘结剂(FP10425，索尼化学(ソニ-ケミカル)社制)，在设定为80℃的加压步骤下根据表1的条件在布线板(引线铜图形宽度为100μm，图形间距为150μm)上接合裸芯片(6mm拐角)，制作半导体器件。
(评价)
对于得到的半导体器件，调查粘结剂中有无空隙(用显微镜目视观察)和可以确保与Jedec的等级3相当的耐湿性(30℃、70％RH、168小时)的高压锅(PCT(121℃、2气压))处理时间及热冲击处理(H/S(-55℃(15分钟)125℃(15分钟))循环次数。在表1中表示得到的结果。
【表1】
                         加压加热条件        空隙      Jedec 等级3
                         压力/温度/时间                 PCT   H/S
                        (kgf/cm2)(℃)(sec)            (hr)  (循环)比较例1     条件固定            10/18020         很多       NG    NG比较例2     第一条件            10/100/10
        第二条件            10/200/10        有         40    200实施例1     第一条件            10/180/10
        第二条件            1/180/10         略微有     60    300实施例2     第一条件            10/100/10
        第二条件            1/200/10         无         ＜500 ＜1000实施例3     第一条件            10/100/15
        第二条件            1/200/5          无         ＜500 ＜1000实施例4     第一条件            10/100/5
        第二条件            1/200/15         无         ＜500 ＜1000实施例5     第一条件            10/30/10
        第二条件            1/200/10         基本没有   60    300实施例6     第一条件            10/100/10
        第二条件            5/150/10
        第三条件            1/200/10         无         ＜500 ＜1000
如表1所示，比较例1是加热加压条件固定的例子，但不能满足与Jedec等级3相当的耐湿性。此外，比较例2是压力固定下使温度分布图(阶梯状上升)变化的例子，但与比较例1相比，显示出良好的结果。
另一方面，实施例1是温度固定下使压力分布图(阶梯状下降)变化的例子，与比较例2的情况相比，空隙极大地减少，而且PCT结果和H/S结果也提高。
实施例2是有与实施例1情况相同的压力分布图，但温度分布图(阶梯状上升)变化的例子，没有空隙，而且PCT结果和H/S结果也提高。因此，根据实施例1和实施例2的结果可知，不仅可使压力分布图(阶梯状下降)变化，而且可使温度分布图(阶梯状上升)变化。
实施例3和实施例4是使实施例2中的第一条件和第二条件的时间进行增减的例子，由这些结果可知，在加热加压时间的50％左右的增减中，对结果没有影响。
实施例5是将第一条件的温度设定得低于实施例2情况的例子，与实施例2的情况相比，对于任何一个评价项目来说，没有实用上的问题，但对于PCT结果和H/S结果来说，有略微恶化的结果。因此，可知加热加压的初期阶段(第一条件)的温度为100℃时比为30℃时更好。
实施例6是将加热加压条件分割成三个条件(使压力阶梯状下降，温度阶梯状上升)的例子，由此可知，加热加压条件可以分割成两个阶段以上。
实施例7
代替薄膜状各向异性导电粘结剂(FP10425，索尼化学(ソニ-ケミカル)社制)，除了使用液晶显示元件用的液状各向异性导电粘结剂(CP7131，ソニ-ケミカル社制)以外，制作与实施例2相同的半导体器件，进行评价。其结果，在获得的半导体器件的粘结剂中未观察到空隙。此外，PCT处理时间也为500小时以上，H/S循环数也为1000次以上，得到实用上没有问题的结果。
实施例8
代替薄膜状各向异性导电粘结剂(FP10425，索尼化学(ソニ-ケミカル)社制)，除了使用表2的液状环氧系绝缘性粘结剂以外，制作与实施例2相同的半导体器件，进行评价。其结果，在获得的半导体器件的粘结剂中未观察到空隙。此外，PCT处理时间为300小时，H/S循环数为700次，得到实用上没有问题的结果。
【表2】
成分                                              重量％
环氧树脂(EP630，油化シェルェポキシ社制)              60
硅烷耦合剂(A187，日本ュニカ社制)                     3
固化剂(HX3941HP，旭チバ社制)                         37
实施例9
代替薄膜状各向异性导电粘结剂(FP10425，ソニ-ケミカル社制)，除了使用表3的液状各向异性导电粘结剂以外，制作与实施例2相同的半导体器件，进行评价。其结果，在获得的半导体器件的粘结剂中未观察到空隙。此外，PCT处理时间为350hr，H/S循环数为750次，得到实用上没有问题的结果。
【表3】
成分                                       重量％
环氧树脂(EP630，油化シェルェポキシ社制)     60
硅烷耦合剂(A187，日本ュニカ社制)            3
固化剂(HX3941HP，旭チバ社制)                32
金属覆盖树脂颗粒(直径5μm)                  5
实施例10
代替薄膜状各向异性导电粘结剂(FP10425，ソニ-ケミカル社制)，除了使用表4的混合薄膜状的环氧系绝缘性粘结剂以外，制作与实施例2相同的半导体器件，进行评价。其结果，在获得的半导体器件的粘结剂中未观察到空隙。此外，PCT处理时间为250小时，H/S循环数为500次，得到实用上没有问题的结果。
【表4】
成分                                          重量％
环氧树脂(EP1009，油化シェルェポキシ社制)        60
硅烷耦合剂(A187，日本ュニカ社制)                3
固化剂(HX3941HP，旭チバ社制)                    37
按照本发明，在通过热固化性粘结剂将半导体元件粘结在布线板上来制造半导体器件的情况下，可不残留空隙地使粘结剂固化，可以实现良好的连接可靠性。

Claims (6)

1.一种半导体器件的制造方法，通过含有以热固性树脂作为主要成分的粘结剂，进行加热加压处理将半导体元件连接在布线板上，其特征在于，按除去粘结剂中的空隙的第一条件(压力＝P1，温度＝T1)进行加热加压处理，然后，按使热固化性树脂彻底固化的第二条件(压力＝P2，温度＝T2)进行加热加压处理，并且与第一条件的压力P1相比，将第二条件的压力P2设定为低压。
2.如权利要求1所述的制造方法，其特征在于，P1和P2的压力分布图为不连续的阶段状。
3.如权利要求1或2的制造方法，其特征在于，与T1相比，将T2设定成高温。
4.如权利要求3所述的制造方法，其特征在于，T1和T2的温度分布图呈阶段状。
5.如权利要求1～4中任一项所述的制造方法，其特征在于，半导体元件为裸芯片、芯片尺寸封装或IC模块。
6.如权利要求1～5中任一项所述的制造方法，其特征在于，粘结剂为各向异性导电粘结剂。
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