CN1251021C - 含包括酸不稳定侧基的多环聚合物的光刻胶组合物 - Google Patents

含包括酸不稳定侧基的多环聚合物的光刻胶组合物 Download PDF

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Publication number
CN1251021C
CN1251021C CNB988089661A CN98808966A CN1251021C CN 1251021 C CN1251021 C CN 1251021C CN B988089661 A CNB988089661 A CN B988089661A CN 98808966 A CN98808966 A CN 98808966A CN 1251021 C CN1251021 C CN 1251021C
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CN
China
Prior art keywords
group
acid
alkyl
branching
solution
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Expired - Fee Related
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CNB988089661A
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English (en)
Chinese (zh)
Other versions
CN1276884A (zh
Inventor
B·L·古多尔
S·佳亚拉曼
R·A·希克
L·F·罗德斯
R·D·阿伦
R·A·迪彼特罗
T·瓦尔劳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
International Business Machines Corp
Original Assignee
Sumitomo Bakelite Co Ltd
International Business Machines Corp
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Publication of CN1276884A publication Critical patent/CN1276884A/zh
Application granted granted Critical
Publication of CN1251021C publication Critical patent/CN1251021C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
CNB988089661A 1997-09-12 1998-09-03 含包括酸不稳定侧基的多环聚合物的光刻胶组合物 Expired - Fee Related CN1251021C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92890097A 1997-09-12 1997-09-12
US08/928,900 1997-09-12

Publications (2)

Publication Number Publication Date
CN1276884A CN1276884A (zh) 2000-12-13
CN1251021C true CN1251021C (zh) 2006-04-12

Family

ID=25456971

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB988089661A Expired - Fee Related CN1251021C (zh) 1997-09-12 1998-09-03 含包括酸不稳定侧基的多环聚合物的光刻胶组合物

Country Status (11)

Country Link
EP (1) EP1021750A1 (ko)
JP (1) JP4416941B2 (ko)
KR (1) KR100572899B1 (ko)
CN (1) CN1251021C (ko)
AU (1) AU747516C (ko)
HK (1) HK1030992A1 (ko)
ID (1) ID25549A (ko)
MY (1) MY123980A (ko)
RU (1) RU2199773C2 (ko)
TW (1) TWI235285B (ko)
WO (1) WO1999014635A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11672263B2 (en) 2015-12-17 2023-06-13 Mars, Incorporated Food product for reducing muscle breakdown and methods thereof

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AU3303599A (en) * 1998-02-23 1999-09-06 B.F. Goodrich Company, The Polycyclic resist compositions with increased etch resistance
JP5095048B2 (ja) * 1999-11-15 2012-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
EP1130468A3 (en) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer and photoresist compositions
TWI295284B (ko) * 2000-04-27 2008-04-01 Shinetsu Chemical Co
JP3997382B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
JP3997381B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
US6566038B2 (en) * 2000-04-28 2003-05-20 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
JP4544389B2 (ja) * 2000-04-28 2010-09-15 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4626736B2 (ja) * 2000-10-04 2011-02-09 Ｊｓｒ株式会社 環状オレフィン系共重合体を含む光学透明材料および液晶表示基板材料
TW544455B (en) * 2001-01-17 2003-08-01 Shinetsu Chemical Co Ether, polymer, resist composition and patterning process
US7037993B2 (en) * 2002-04-08 2006-05-02 Zeon Corporation Norbornene-based ring-opening polymerization polymer, product of hydrogenation of norbornene-based ring-opening polymerization polymer, and processes for producing these
US7989571B2 (en) 2002-07-10 2011-08-02 Lg Chem, Ltd. Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer
CN1281653C (zh) * 2002-07-10 2006-10-25 Lg化学株式会社 降冰片烯－酯基加成聚合物及该降冰片烯－酯基加成聚合物的制备方法
KR100526403B1 (ko) 2002-07-10 2005-11-08 주식회사 엘지화학 에스테르기 또는 아세틸기를 포함하는 노보넨계부가중합체의 제조방법
US7312285B2 (en) 2002-07-10 2007-12-25 Lg Chem, Ltd. Method for preparing norbornene based addition polymer containing ester or acetyl functional group
WO2004074933A2 (en) * 2003-02-20 2004-09-02 Promerus Llc Dissolution rate modifiers for photoresist compositions
US20070112158A1 (en) * 2003-11-18 2007-05-17 Jsr Corporation Novel (co)polymer, process for producing the same, and process for producing carboxylated (co)polymer
JP2006100563A (ja) * 2004-09-29 2006-04-13 Sumitomo Bakelite Co Ltd 半導体装置
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
KR101705670B1 (ko) 2007-06-12 2017-02-10 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP5332883B2 (ja) * 2009-04-30 2013-11-06 住友ベークライト株式会社 感光性組成物、光導波路、光配線、光電気混載基板、電子機器、および光導波路の形成方法
JP6459192B2 (ja) * 2014-03-20 2019-01-30 住友ベークライト株式会社 感光性樹脂組成物
KR102324819B1 (ko) 2014-12-12 2021-11-11 삼성전자주식회사 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
KR101746789B1 (ko) 2014-12-18 2017-06-13 주식회사 엘지화학 고리형 올레핀 화합물의 (공)중합체를 포함하는 수직 배향막

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US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11672263B2 (en) 2015-12-17 2023-06-13 Mars, Incorporated Food product for reducing muscle breakdown and methods thereof

Also Published As

Publication number Publication date
HK1030992A1 (en) 2001-05-25
ID25549A (id) 2000-10-12
EP1021750A1 (en) 2000-07-26
JP4416941B2 (ja) 2010-02-17
AU9219998A (en) 1999-04-05
TWI235285B (en) 2005-07-01
KR100572899B1 (ko) 2006-04-24
RU2199773C2 (ru) 2003-02-27
WO1999014635A1 (en) 1999-03-25
AU747516C (en) 2003-07-24
JP2001516804A (ja) 2001-10-02
AU747516B2 (en) 2002-05-16
KR20010023940A (ko) 2001-03-26
CN1276884A (zh) 2000-12-13
MY123980A (en) 2006-06-30

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SUMITOMO BAKELITE CO.

Free format text: FORMER OWNER: B.F.GOODRICH CO. (US) 500 SOUTH MAIN STREET AKRON, OHIO 44318, USA

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20030827

Address after: Tokyo, Japan

Applicant after: Sumitomo Bakelite Co., Ltd.

Co-applicant after: International Business Machines Corp.

Address before: American Ohio

Applicant before: B. F. Goodrich Company

Co-applicant before: International Business Machines Corp.

C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060412

Termination date: 20130903