CN1241968A - 喷墨打印头的钝化 - Google Patents
喷墨打印头的钝化 Download PDFInfo
- Publication number
- CN1241968A CN1241968A CN97180933A CN97180933A CN1241968A CN 1241968 A CN1241968 A CN 1241968A CN 97180933 A CN97180933 A CN 97180933A CN 97180933 A CN97180933 A CN 97180933A CN 1241968 A CN1241968 A CN 1241968A
- Authority
- CN
- China
- Prior art keywords
- parts
- support
- shading unit
- aforementioned
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 53
- 210000002421 cell wall Anatomy 0.000 claims description 17
- 239000012530 fluid Substances 0.000 claims description 13
- 238000007639 printing Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 11
- 230000000873 masking effect Effects 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000000976 ink Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000112 cooling gas Substances 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000009489 vacuum treatment Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005562 fading Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101000984200 Homo sapiens Leukocyte immunoglobulin-like receptor subfamily A member 3 Proteins 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- 102100025556 Leukocyte immunoglobulin-like receptor subfamily A member 3 Human genes 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/1609—Production of print heads with piezoelectric elements of finger type, chamber walls consisting integrally of piezoelectric material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1635—Manufacturing processes dividing the wafer into individual chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1643—Manufacturing processes thin film formation thin film formation by plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14379—Edge shooter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49401—Fluid pattern dispersing device making, e.g., ink jet
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
一种利用钝化涂料的化学蒸汽沉淀、对带槽喷墨打印头部件(100)的槽壁(210,220)进行选择性钝化的方法;方法包括将所述部件安装于一个支撑(130)中,与其上的基准定位点(175)对齐;支撑带有遮蔽装置(170)以遮蔽部件的选定区域,并将钝化涂料沉积于槽壁的未遮蔽部分上。
Description
本发明涉及利用钝化涂料的化学蒸汽沉淀,对带槽喷墨打印头部件的槽壁进行选择性钝化;在另一方面,本发明涉及一种通用的真空处理部件表面的方法。
在真空中利用化学蒸汽沉淀使钝化层(如硅氮化物)沉淀来进行表面保护在现有技术中公知,如“应用物理杂志”66,No.6,2475-2480页。该技术大量使用于半导体装置的制造中,通过使用影印石版掩模来实现对那些所需要区域的涂料进行限制。如图1(a)所示,在前一步骤中,在将未暴露在紫外线下的区域(以3指示)溶解后,遮蔽材料层1保持在基底2上选定的位置。然后整个基底暴露在以4指示的钝化涂料中。图1(b)显示了经涂料处理之后的基底2:钝化物5已沉积在区域3上,同时沉积在遮蔽材料上的钝化物随着移走遮蔽材料本身而被一起移走。上述遮蔽过程在技术中公知,并在平面硅晶片装置的制造中效果很好。
在EP-A-0 364 136中以通用术语讨论了带槽喷墨打印头的钝化,在这儿作为参考。图2(a)是本文档所公开类型的打印头的一个部分,其垂直于槽的纵轴:这些装置包括一排形成于压电材料板14中的槽12,板最好由铅锆钛酸盐(PZT)制成,并已沿箭头15指示的厚度方向极化。每个槽由侧壁16、底面18和顶板20所限定,并在每个侧壁的表面上形成一个电极34。
如已知,比如这儿参考的EP-A-0 277 703,形成于侧壁16相对表面上的电极34之间的电场的应用,会导致侧壁的压电材料产生剪切变形,从而使小墨水滴从与槽相连的喷嘴中滴出。
如图2(b)沿槽纵轴的截面图所示,这样一个喷嘴24可以位于每个槽12的前端,而槽又包括一个同一深度的前部36和一个深度较小的后部38,前部大致装于槽深度的一半处,后部完全装于底部和壁之上,以形成连接轨道。槽中电极的前部施加上述的驱动电场,而后部即电极的连接轨道部分例如通过导线搭接等相连接,以驱动电压供给装置(图中未示)。镍、镍铬物(一种镍和铬的合金)和铝因为高传导率和适合导线搭接,已被证明为特别适合于作电极材料。
对这种打印头槽壁上的电极随后进行钝化是必要的,以在操作打印头的过程中保护电极免遭槽中容纳的墨的侵袭。铝尤其需要钝化,以抑制如果电极直接接触墨可能发生的电解和起泡或腐蚀。当墨是墨水或者可导电时,尤其需要该保护作用。
钝化层的混合物被选定来作为电子和/或离子和/或墨水屏障,且最好安装得向下延伸至槽的一个侧壁、横跨槽的底部、向上延伸至槽的另一个侧壁并从那个侧壁顶部进入附近的槽,由此建立一个连续的没有任何边界的保护层,否则墨水可能渗漏下去。这儿所参考的WO95/07820公开了尤其适合于如图2(a)和(b)所示的“深”槽钝化的化学蒸汽沉淀过程,其槽的外表(高/宽)比率至少为3∶1。
应该说明:打印头后部38中的连接轨道必须不接触钝化物,以便建立轨道至驱动电路的连接(通常是导线搭接)。然而,当利用化学蒸汽沉淀来沉积钝化层时,前述传统使用的影印石版掩模技术被证明在这种情形下使用很困难:具体说,在每个槽后部的壁和底面(典型宽度为60-90微米,深度为20-25微米)上施加和去除遮蔽材料是非常复杂和困难的。如果除了后部38还需要遮蔽槽的整个深度的一部分,前部36(典型宽度为60-90微米,典型深度为300-400微米),这些问题变得更严重;属于本申请人的共同未决的国际申请no.PCT/GB97/01083公开的打印头构造中提出了这种情形,在这儿作为参考。
本发明的一个目标是:一种处理方法,用于对深槽喷墨打印头的槽壁进行选择性钝化,而无传统技术的缺点,并保证将钝化涂料精确地置于喷墨打印头槽中。
因此,本发明的第一个方面是包括一种方法,通过钝化涂料的化学蒸汽沉淀,用于选择性地钝化带槽喷墨打印头部件的槽壁;该方法包括将所述部件安装于一个支撑中,与其基准定位点对齐;支撑带有遮蔽装置以遮蔽部件的选定区域,并将钝化涂料沉积于槽壁的未遮蔽部分上。
利用固定于支撑上而不属于部件本身的遮蔽装置,可以以一种简单而有效的方式防止形成于部件中的槽的槽壁某些部分钝化。此外,支撑上的基准定位点可保证精确遮蔽,其允许需钝化的部件相对于支撑因此即相对于遮蔽装置精确地定位。
有利的是,遮蔽装置与支撑是一体的。发明人发现符合本发明的化学蒸汽沉淀通常导致加热遮蔽装置的表面,而这种一体式结构使热量容易从表面流走,流至支撑的其余部分,因此减小了遮蔽装置可能变形而与正在钝化的部件不对齐的趋势。
更有利的是,部件的一个第一带槽表面被弹性贴靠于支撑上。业已发现,在欲处理的部件由铅锆钛酸盐(PZT)等尺寸公差小于硅等传统材料所能达到的公差的材料所组成,以及在部件厚度有显著变化时,这个特征特别有用。在这种情形下,传统的在部件两个表面夹紧的方法将产生夹紧力的变动,导致部件变形。只将部件的一个表面贴靠于支撑就避免了这个问题。
部件第一带槽表面对面的那个部件表面可有利地与流体进行热交换。这种无基板和相关热衰退化合物及垫料介入的直接交换,允许更精确地控制部件温度。
在部件和流体之间可置入一层膜。这层膜稍微阻碍了热交换,但如果部件正在渗漏或开始渗漏(如开裂)时,它可维持空腔中的真空。此外,膜方便地附着于支撑上,以便将部件保持于支撑中,即便不是与支撑完全贴靠,这样可得到一个更容易操作的组件。
本发明的第二个方面包括一种真空处理部件第一表面的方法,部件位于容纳部件支撑的真空腔中,其中一层膜将部件的第二表面与热/冷流体分隔开,第二表面位于所述第一表面的对面;在部件和通过膜的流体间进行热交换;方法包括如下步骤:将部件置入支撑以使得部件的第一表面与支撑贴靠,将膜附着于支撑上以便将部件保持在支撑中,以及真空处理如此位于支撑中的部件第一表面。
支撑贴靠欲处理部件的边缘,一层膜附着于支撑上以将部件保持在支撑中,支撑的这种设计允许通过流体对部件未处理的边进行冷却(或甚至加热),同时,如果部件正在渗漏或开始渗漏(如开裂)时,其可确保流体不会渗入真空腔中(这将破坏处理所需要的真空)。此外,通过利用膜将部件保持于支撑中,得到的组件比单独的部件或松动于支撑中的部件都要更容易操作。
在部件形成部分晶片时,上述设计特别有利。这些晶片很难操作,尤其是压电活性材料的晶片,特别是铅锆钛酸盐(PZT)。
在后附的权利要求、描述和附图中将展示本发明的其他有利的实施例。
现在将通过参考附图的例子来描述本发明,其中:
图3(a)是符合本发明的第一个实施例的设备的截面图;
图3(b)是图3(a)相应的平面图;
图3(c)是图3(a)中A向的详细视图;
图4(a)是沿打印头槽的方向的截面图,打印头按照本发明制造;
图4(b)是打印头槽壁的截面图,沿图4(a)中C-C线;
图5是本发明第二个实施例的截面图。
参考图3(a),说明了一个PZT晶片100,沿厚度方向极化。晶片的上表面180上形成了好几套符合WO95/18717(在这儿作为参考)的平行槽210、220,以便通过将晶片切成穿过槽的小片来形成更大量的单独打印头,其步骤将随后讨论。如上所述,槽壁上形成了电极(图中未示)。
晶片100安装于由含银的硅树脂组成的导热垫料120中,硅树脂在现有技术中已知;通过在两者间插入一层薄的热衰退化合物(图中未示),导热垫料又安装于一块导热(如碳或铝等金属)板130中。由板能够夹入传统真空处理设备(一个环形夹紧圈和一个O形密封圈,分别以140和150来指示)来定板130的尺寸;如160所指示,冷却流体(通常是装于空腔165中的氦)流过板的底面。
遮蔽装置170贴靠晶片上表面180,并通过确保遮蔽装置和板精确对齐、因此确保钝化层精确置于晶片上的装置来附着于板130上。在示例中,装置包括凸出于板130的第一和第二销钉175,利用孔和狭槽(图中未示)定位于遮蔽装置170中。孔的直径与相应的销钉直径相匹配,以确保遮蔽装置和板的精确对齐,同时第二销钉位于的狭槽还用于钝化过程中遮蔽装置的热膨胀。
硅树脂垫料120弹性地支撑晶片的下表面190,以弥补晶片厚度上的任何变化,并避免由于不均匀夹紧力而造成的晶片变形。
遮蔽装置可由任何真空相容的导热材料制成,如碳、不锈钢和铝。图4a例子中的遮蔽装置由约2毫米厚的铝制成,其覆盖着晶片。
翻到图3(b),参考号250指示着安装于板130上的基准点特征(示例中为金属销钉),晶片通过其对齐。如上述WO95/18717中的解释,这些基准点特征和晶片上相应的定位点(图中未示)用于锯晶片上的槽这个前一制造步骤中,并允许在随后制造步骤中正确放置形成于晶片中的槽。示于图3(b)中的两个销钉250最好与晶片上两个相应的定位点对齐,这样允许部件准确地相对于支撑(从而相对于遮蔽装置)在两个互相垂直的方向定位。
在图3(b)中,举例来说,在晶片上形成了两套槽210、220。在随后的制造步骤中,这些槽的集合将沿211和221线分别切开,以各自形成四排示于图3b中类型的打印头。为了每排打印头都有各自不被钝化的后部42,以允许与电极电镀进行电力连接,有必要精确地遮蔽晶片的边缘230和中央240。
有利的是,一方面通过位于遮蔽装置170和板130间的对齐装置175,另一方面通过位于板130和与槽一起形成的晶片130之间的对齐装置250,遮蔽装置相对于槽精确定位变得容易了。
图3(c)显示了遮蔽装置和槽沿图3(a)中A向的细节,如上述,深槽喷墨打印头槽壁的钝化最好用WO95/07820中所述过程来进行,其特征是:来自供给源的钝化分子到达晶片表面的路径不是成直线,而是多重分散的。
因此,遮蔽装置的边缘最好如171所示成一角度(典型为60°),以免阻碍分子以一不垂直的角度接近基底的路径,如203所示。遮蔽斜面171的顶边173最好接近于晶片表面或与晶片表面接触,以使钝化物(其可能沿对面的路径204)进入如205所示的遮蔽装置底部的数量最少。如果需要的话,可通过将顶边173延伸超出槽中的点202来进一步弥补后一个问题—顶边173的一般延伸量等于槽的深度,而钝化层被设计为终止于点202。
此外或作为上述的另一种选择,根据前述未决的PCT专利申请no.PCT/GB97/01083,部分槽壁可以在应用电极前选择性地进行钝化。如图4(a)所示,这样一个打印头带有全部深度槽的一个部分(N),其一个侧面向墨水供给窗27张开(因此,其不是槽“工作”长度L的一部分);其与图2(b)中传统结构的差异在于:在电极34和槽壁16的压电材料间插入了一钝化材料层40,层40的绝缘常数要低于槽壁压电材料的绝缘常数。
如槽壁部分的截面图4(b)明显所示,在两钝化层(电容C2)之间串联夹入了压电材料(电容C1),结果压电材料的总电容将小于槽壁压电材料单独的电容,因为可先概算一下,总电容由1/C总=1/C2+2/C1给出。因此,打印头的总电容负载降低了。
如图4(a)可见,该技术也能够应用于连接轨道的区域C以及过渡区域R。为了更有效,预钝化层40最好须相对于电极和墨水入口而精确地置于槽中。这可通过使用符合本发明的合适遮蔽装置来实现。
图5说明了本发明的另一个实施例,对于参考图3(a)-(c)已讨论过的那些特征,其参考号是相同的。在上表面180上形成若干组槽210、220的晶片100位于一个盒310中,盒310处于一个整体式的遮蔽装置/支撑结构300中,晶片上表面180与结构300在至少部分遮蔽边230处贴靠。一层不透气的膜320延伸越过晶片100和结构300的后部—这样可将晶片保持在盒310中—然后膜延伸至结构的边缘,利用传统真空处理装置的O形圈150(包括环形夹紧圈140)来密封,因此可将整个支撑与冷却气体隔开。
其后,在位于被夹紧的支撑下面的空腔165中可以以传统方式流通冷却(或加热)气体160,在晶片100与可能通过膜320的冷却气体160之间的热交换要显著大于图4a、b的设计中晶片与可能通过热衰退化合物、硅树脂垫料和铝板间的热交换。
本发明尤其适合于:根据前述WO95/07820,给用压电材料形成的槽壁涂上无机钝化层。该过程涉及将带槽晶片的平均温度保持在200℃以下,在该温度下,材料的极性降低不超过30%;并暴露出槽壁表面以钝化成涂料的均质蒸汽;而在从蒸汽源送至带槽部件表面的过程中,蒸汽经过了多重分散。
本发明的这种设计允许发生沉积的晶片表面保持在一个非常低的温度(典型为40℃而不是140℃),而这又进一步允许使用更具活性类型的压电材料—尤其如PZT类型的材料—其极性在较高温度下将消失。对于高温钝化技术,如使用高微波能或RF偏压晶片,该设计也能够保持已存在的温度水平。
此外,这种设计可帮助降低晶片用遮蔽装置遮蔽沉淀部分与完全暴露在沉淀下的部分之间的温度变化;如果没有这种冷却,晶片相邻部分间在30秒左右就能够产生60℃量级的温度差异,这将产生不同的膨胀,导致晶片破裂。
如果晶片破裂或晶片材料是可渗透气体的,膜320也确保了冷却气体不会逸入处理腔中。有利的是,膜可拆卸地粘贴于整体式结构300的后部,因此即使结构从真空处理设备中移走,仍可将晶片保持在该整体式结构中。这简化了操作,尤其是对于易破碎的晶片,并且是一种适用于所有真空处理的设计,不仅仅限于钝化或化学蒸汽沉积。膜用如聚氯乙烯、聚酯、聚酰亚胺等聚合物制成,厚度为50-100微米,其已被特别证明有足够的强度和有利的热交换特性。
作为膜320的另一种选择,用如聚酰亚胺等真空相容的不透气材料制成的自粘胶带可用于密封晶片100的周边与盒310边缘(在图5中以虚线400所指示)之间的空隙。与膜相比,这种设计对热交换的阻抗稍低,获得满盒空气的可能较小,这可产生热点,而空气本来可以将晶片的下表面与冷却气流隔离。胶带也可以置于晶片下表面那些特别易受破裂影响的区域。
对于第一个实施例,贴靠晶片100的一个侧面只是避免了由于不均匀的晶片厚度导致的不均匀夹紧力产生的晶片变形。图5中遮蔽装置170的中心部分240也提供了一定程度的对晶片100中心的支撑,以抵抗冷却流体160施加于下表面190的压力。
符合图5的遮蔽装置和支撑的整体式结构还进一步使从遮蔽装置表面到支撑底部并因此到冷却气体的热交换变得容易。对于先前的实施例,结构能够提供定位晶片的基准点,这样确保了晶片与其上的遮蔽装置之间的精确对齐;在示例中,基准点是安装在盒310边缘的销钉。
应理解:只是通过例子描述了本发明,在不超出本发明范围的情况下,可作出多种变动。
比如,槽中电极的高度可根据最小耗能(大致正比于电容和工作电压平方的乘积)而不是最小工作电压来优化。这将导致电极只向下延伸至槽壁的三分之一长度,而不是每个前述EP-A-0 364 136中的向下延伸一半长度。
关闭顶部张开的槽的顶板一般用与形成槽的板相同的压电材料制成,以确保热匹配。虽然EP-A-0 364 136建议板不要极化以避免寄生电场导致的变形,但在实践中尚未发现使用极化材料对打印头性能有任何显著影响,并且有利地将材料目录减少至单一类型的(极化)压电材料。
在组装顶板后,单个槽可通过测量位于壁两侧的两个电极之间的电容来测试。作为另一种选择,根据EP-A-0 376 606,可测量壁的共振现象。这两种技术都可由装置自动进行,装置带有探针,其与壁上两个电极的连接轨道接触,进行测量,然后移向下一个槽。
形成槽喷嘴的喷嘴板可根据WO95/11131附着于打印头上,最好使用一种热融胶,以便在随后证明喷嘴形成过程失败后,能够拆下喷嘴板。合适的胶依赖于所用的墨,可包括HM240/12、HM260/12和HM31/12,Borden HM617;3M 3748Q和3764Q;Paragon Prodag 873,697,984和Bostik HM 5649。
喷嘴板可在附着前通过切割等方法来成形,使厚度从槽队列中央的40-50微米变至槽队列端部的1-20微米。这允许在槽队列端部形成更厚的胶层,使喷嘴板抗剪切和剥落应力的能力更强,尤其是在槽队列方向。
喷嘴形成最好在喷嘴板附着后进行,使用WO93/15911中描述的技术。根据WO96/08375,可使用如Datac P7085、Swift K9250和DPAC 4427等压力敏感胶,将保护性胶带应用于喷嘴板的干涂料上。
本说明书(该术语包括权利要求)公开的和/或附图显示的每个特征,都可与其他公开的和/或阐述的特征独立并入本发明。
Claims (28)
1.一种利用钝化涂料的化学蒸汽沉淀、对带槽喷墨打印头部件进行选择性钝化的方法,包括将所述部件安装于一个支撑中,与其基准定位点对齐,该支撑带有遮蔽装置以遮蔽部件的选定区域,并将钝化涂料沉积于槽壁的未遮蔽部分上。
2.根据权利要求1所述的方法,其特征在于,遮蔽装置置于支撑的固定位置上。
3.根据权利要求2所述的方法,其特征在于,遮蔽装置与支撑是一体的。
4.根据前述权利要求中任一项所述的方法,其特征在于,部件带有至少一个基准面,用于与支撑上的基准定位点对齐,所述部件的槽至少与一个基准面对齐形成。
5.根据权利要求4所述的方法,其特征在于,部件带有两个基准面,以允许部件在两个互相垂直的方向上与支撑对齐。
6.根据前述权利要求中任一项所述的方法,其特征在于,部件的一个第一带槽表面贴靠于支撑上。
7.根据权利要求6所述的方法,其特征在于,所述第一带槽表面被弹性贴靠于支撑上。
8.根据权利要求6或7中任一项所述的方法,其特征在于,部件的一个第一带槽表面贴靠于所述遮蔽装置的遮蔽边缘上。
9.根据前述权利要求中任一项所述的方法,其特征在于,与部件第一带槽表面相对的一个部件表面与流体进行热交换。
10.根据权利要求9所述的方法,其特征在于,所述流体与部件直接接触。
11.根据权利要求9所述的方法,其特征在于,一层膜被插入在部件和流体之间。
12.根据权利要求11所述的方法,其特征在于,所述膜将部件与流体隔开。
13.根据权利要求11或12中任一项所述的方法,其特征在于,所述膜附着于支撑上。
14.根据权利要求13所述的方法,其特征在于,所述膜将支撑与流体隔开。
15.根据从属于权利要求6的权利要求13所述的方法,其特征在于,所述膜用于保持部件与支撑贴靠。
16.根据前述权利要求中任一项所述的方法,其特征在于,所述遮蔽装置的一条遮蔽边在遮蔽装置背离部件第一带槽表面的那个面上被切成斜面。
17.根据前述权利要求中任一项所述的方法,其特征在于,所述遮蔽装置的一条遮蔽边基本接触部件的第一带槽表面。
18.根据前述权利要求中任一项所述的方法,其特征在于,所述遮蔽装置带有多个孔。
19.根据前述权利要求中任一项所述的方法,其特征在于,所述支撑在钝化涂料沉积之前被置于一个真空腔中。
20.根据权利要求19所述的方法,其特征在于,所述支撑被夹紧于所述真空腔中。
21.根据权利要求20所述的方法,其特征在于,所述部件的形式是晶片。
22.根据权利要求21所述的方法,其特征在于,晶片中包含多个部件,其各个表面同时进行真空处理。
23.根据前述权利要求中任一项所述的方法,其特征在于,所述带槽喷墨打印头部件的所述槽的宽度范围为60-90微米。
24.根据权利要求23所述的方法,其特征在于,槽的深度大于20微米。
25.根据权利要求24所述的方法,其特征在于,槽的深度大于300微米。
26.一种真空处理部件第一表面的方法,部件位于容纳部件支撑的真空腔中,其特征在于,一层膜将部件的第二表面与热交换流体分隔开,第二表面位于所述第一表面的对面,在部件和通过膜的流体间发生热交换,该方法包括如下步骤:将部件置入支撑以使得部件的第一表面与支撑贴靠,将膜附着于支撑上以便将部件保持在支撑中,以及对部件的第一表面进行真空处理。
27.根据权利要求26所述的方法,其特征在于,所述部件的形式是晶片。
28.根据权利要求27所述的方法,其特征在于,一个晶片中包含多个部件,其各个表面同时进行真空处理。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9622177.5 | 1996-10-24 | ||
GBGB9622177.5A GB9622177D0 (en) | 1996-10-24 | 1996-10-24 | Passivation of ink jet print heads |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1241968A true CN1241968A (zh) | 2000-01-19 |
CN1230304C CN1230304C (zh) | 2005-12-07 |
Family
ID=10801905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB97180933XA Expired - Fee Related CN1230304C (zh) | 1996-10-24 | 1997-10-17 | 喷墨打印头的钝化方法 |
Country Status (11)
Country | Link |
---|---|
US (2) | US6232135B1 (zh) |
EP (2) | EP0951394B1 (zh) |
JP (2) | JP3314359B2 (zh) |
KR (2) | KR100701508B1 (zh) |
CN (1) | CN1230304C (zh) |
AU (1) | AU4633797A (zh) |
BR (1) | BR9712371A (zh) |
CA (1) | CA2268320C (zh) |
DE (2) | DE69710922T2 (zh) |
GB (1) | GB9622177D0 (zh) |
WO (1) | WO1998017477A1 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MXPA01004840A (es) | 1998-11-14 | 2004-09-06 | Xaar Technology Ltd | Aparato para la deposicion de gotas. |
ATE450895T1 (de) * | 1999-07-21 | 2009-12-15 | E Ink Corp | Bevorzugte methode, elektrische leiterbahnen für die kontrolle eines elektronischen displays herzustellen |
IL148024A (en) | 1999-08-14 | 2005-07-25 | Xaar Technology Ltd | Component and method for use in a droplet deposition apparatus |
EP1177897A1 (en) * | 2000-08-01 | 2002-02-06 | Agfa-Gevaert N.V. | A droplet deposition apparatus with releasably attached nozzle plate |
US6817698B2 (en) * | 2000-08-01 | 2004-11-16 | Agfa-Gevaert | Droplet deposition apparatus with releasably attached nozzle plate |
US6629756B2 (en) * | 2001-02-20 | 2003-10-07 | Lexmark International, Inc. | Ink jet printheads and methods therefor |
JP2002321358A (ja) * | 2001-04-24 | 2002-11-05 | Sii Printek Inc | インクジェットヘッド及びコンタクト電極の形成方法 |
JP2003224269A (ja) * | 2001-10-26 | 2003-08-08 | Hewlett Packard Co <Hp> | 集積回路を製造するための装置および方法 |
US6740536B2 (en) * | 2001-10-26 | 2004-05-25 | Hewlett-Packard Develpment Corporation, L.P. | Devices and methods for integrated circuit manufacturing |
US7890771B2 (en) * | 2002-04-17 | 2011-02-15 | Microsoft Corporation | Saving and retrieving data based on public key encryption |
US8251471B2 (en) * | 2003-08-18 | 2012-08-28 | Fujifilm Dimatix, Inc. | Individual jet voltage trimming circuitry |
US7040016B2 (en) * | 2003-10-22 | 2006-05-09 | Hewlett-Packard Development Company, L.P. | Method of fabricating a mandrel for electroformation of an orifice plate |
US8068245B2 (en) * | 2004-10-15 | 2011-11-29 | Fujifilm Dimatix, Inc. | Printing device communication protocol |
US7911625B2 (en) * | 2004-10-15 | 2011-03-22 | Fujifilm Dimatrix, Inc. | Printing system software architecture |
US7907298B2 (en) * | 2004-10-15 | 2011-03-15 | Fujifilm Dimatix, Inc. | Data pump for printing |
US8085428B2 (en) | 2004-10-15 | 2011-12-27 | Fujifilm Dimatix, Inc. | Print systems and techniques |
US7722147B2 (en) * | 2004-10-15 | 2010-05-25 | Fujifilm Dimatix, Inc. | Printing system architecture |
US8199342B2 (en) * | 2004-10-29 | 2012-06-12 | Fujifilm Dimatix, Inc. | Tailoring image data packets to properties of print heads |
US7234788B2 (en) * | 2004-11-03 | 2007-06-26 | Dimatix, Inc. | Individual voltage trimming with waveforms |
US7556327B2 (en) * | 2004-11-05 | 2009-07-07 | Fujifilm Dimatix, Inc. | Charge leakage prevention for inkjet printing |
GB0510991D0 (en) | 2005-05-28 | 2005-07-06 | Xaar Technology Ltd | Method of printhead passivation |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5769780A (en) * | 1980-10-20 | 1982-04-28 | Seiko Epson Corp | High withstand voltage mos transistor |
US4671850A (en) * | 1985-08-16 | 1987-06-09 | Micronix Corporation | Mask using polyimide to support a patterned x-ray opaque layer |
US4879568A (en) | 1987-01-10 | 1989-11-07 | Am International, Inc. | Droplet deposition apparatus |
GB8824014D0 (en) | 1988-10-13 | 1988-11-23 | Am Int | High density multi-channel array electrically pulsed droplet deposition apparatus |
GB8830399D0 (en) | 1988-12-30 | 1989-03-01 | Am Int | Method of testing components of pulsed droplet deposition apparatus |
US4892142A (en) * | 1989-05-05 | 1990-01-09 | Luz Industries Israel, Ltd. | Device and method for removing gaseous impurities from a sealed vacuum |
US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
US5393577A (en) * | 1990-06-19 | 1995-02-28 | Nec Corporation | Method for forming a patterned layer by selective chemical vapor deposition |
JP2637265B2 (ja) * | 1990-06-28 | 1997-08-06 | 株式会社東芝 | 窒化珪素膜の形成方法 |
JPH04363250A (ja) * | 1991-03-19 | 1992-12-16 | Tokyo Electric Co Ltd | インクジェットプリンタヘッド及びその製造方法 |
CA2075786A1 (en) * | 1991-08-16 | 1993-02-17 | John R. Pies | Method of manufacturing a high density ink jet printhead array |
GB9202434D0 (en) | 1992-02-05 | 1992-03-18 | Xaar Ltd | Method of and apparatus for forming nozzles |
US5326725A (en) * | 1993-03-11 | 1994-07-05 | Applied Materials, Inc. | Clamping ring and susceptor therefor |
JP3165938B2 (ja) * | 1993-06-24 | 2001-05-14 | 東京エレクトロン株式会社 | ガス処理装置 |
GB9318985D0 (en) * | 1993-09-14 | 1993-10-27 | Xaar Ltd | Passivation of ceramic piezoelectric ink jet print heads |
JP3052692B2 (ja) * | 1993-09-30 | 2000-06-19 | ブラザー工業株式会社 | 印字ヘッド及びその製造方法 |
GB9321786D0 (en) | 1993-10-22 | 1993-12-15 | Xaar Ltd | Droplet deposition apparatus |
GB9400036D0 (en) | 1994-01-04 | 1994-03-02 | Xaar Ltd | Manufacture of ink jet printheads |
GB9418412D0 (en) | 1994-09-13 | 1994-11-02 | Xaar Ltd | Removal of material from inkjet printheads |
DE69714251T2 (de) | 1996-04-23 | 2003-03-27 | Xaar Technology Ltd | Tröpfchenablageapparat |
-
1996
- 1996-10-24 GB GBGB9622177.5A patent/GB9622177D0/en active Pending
-
1997
- 1997-10-17 AU AU46337/97A patent/AU4633797A/en not_active Abandoned
- 1997-10-17 DE DE69710922T patent/DE69710922T2/de not_active Expired - Fee Related
- 1997-10-17 JP JP51910198A patent/JP3314359B2/ja not_active Expired - Fee Related
- 1997-10-17 DE DE69735648T patent/DE69735648T2/de not_active Expired - Fee Related
- 1997-10-17 KR KR1020057009360A patent/KR100701508B1/ko not_active IP Right Cessation
- 1997-10-17 KR KR1019997003250A patent/KR100566577B1/ko not_active IP Right Cessation
- 1997-10-17 CN CNB97180933XA patent/CN1230304C/zh not_active Expired - Fee Related
- 1997-10-17 WO PCT/GB1997/002878 patent/WO1998017477A1/en active IP Right Grant
- 1997-10-17 BR BR9712371-4A patent/BR9712371A/pt not_active IP Right Cessation
- 1997-10-17 CA CA002268320A patent/CA2268320C/en not_active Expired - Fee Related
- 1997-10-17 EP EP97945027A patent/EP0951394B1/en not_active Expired - Lifetime
- 1997-10-17 EP EP01115744A patent/EP1138498B1/en not_active Expired - Lifetime
-
1999
- 1999-04-19 US US09/294,732 patent/US6232135B1/en not_active Expired - Fee Related
-
2001
- 2001-03-13 US US09/804,846 patent/US6399402B2/en not_active Expired - Fee Related
-
2002
- 2002-02-22 JP JP2002045596A patent/JP3808786B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3314359B2 (ja) | 2002-08-12 |
JP3808786B2 (ja) | 2006-08-16 |
EP0951394A1 (en) | 1999-10-27 |
KR100701508B1 (ko) | 2007-03-29 |
BR9712371A (pt) | 2000-01-25 |
CA2268320A1 (en) | 1998-04-30 |
DE69710922T2 (de) | 2002-10-10 |
KR20000049157A (ko) | 2000-07-25 |
EP1138498A1 (en) | 2001-10-04 |
DE69710922D1 (de) | 2002-04-11 |
JP2002294455A (ja) | 2002-10-09 |
DE69735648D1 (de) | 2006-05-18 |
GB9622177D0 (en) | 1996-12-18 |
KR100566577B1 (ko) | 2006-03-31 |
EP1138498B1 (en) | 2006-04-05 |
AU4633797A (en) | 1998-05-15 |
CN1230304C (zh) | 2005-12-07 |
WO1998017477A1 (en) | 1998-04-30 |
DE69735648T2 (de) | 2007-04-26 |
US6399402B2 (en) | 2002-06-04 |
US6232135B1 (en) | 2001-05-15 |
KR20050070144A (ko) | 2005-07-05 |
JP2000503927A (ja) | 2000-04-04 |
US20010018223A1 (en) | 2001-08-30 |
EP0951394B1 (en) | 2002-03-06 |
CA2268320C (en) | 2006-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1230304C (zh) | 喷墨打印头的钝化方法 | |
EP0646464B1 (en) | Ink ejecting device having a multi-layer protection film for electrodes | |
US6786175B2 (en) | Showerhead electrode design for semiconductor processing reactor | |
US5986874A (en) | Electrostatic support assembly having an integral ion focus ring | |
KR100334997B1 (ko) | 세라믹압전잉크분사프린트헤드의불활성화 | |
CN1245291C (zh) | 液滴沉积装置 | |
EP0692814B1 (en) | Multi-electrode electrostatic chuck | |
WO2001008800A1 (en) | Temperature control for multi-vessel reaction apparatus | |
KR970063549A (ko) | 웨이퍼 냉각장치와 방법 및 그 조립체 | |
DE202010004773U1 (de) | Dichtungselement mit Postionierungsmerkmal für eine festgeklemmte monolithische Gasverteilungselektrode | |
US20100055006A1 (en) | Slide Processing Apparatus | |
DE202011109320U1 (de) | Nockenarretierte Gasverteilungselektrode und -Elektrodenanordnung | |
EP1717034B1 (en) | Ink-jet head and its manufacture method, ink-jet printer and method for manufacturing actuator unit | |
US11024529B2 (en) | System and method for residual voltage control of electrostatic chucking assemblies | |
JPH07292466A (ja) | スパッタリングカソード | |
US7581825B2 (en) | Inkjet head and a method of manufacturing thereof | |
CN210458355U (zh) | 一种基板架以及一种镀膜设备 | |
AU2003200514B2 (en) | Temperature control for multi-vessel reaction apparatus | |
JPH081975A (ja) | サーマルヘッド | |
JPS5824462A (ja) | 感熱記録ヘツド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20051207 Termination date: 20151017 |
|
EXPY | Termination of patent right or utility model |