CN1241028A - 能有效进行氢钝化的半导体器件的制造方法 - Google Patents
能有效进行氢钝化的半导体器件的制造方法 Download PDFInfo
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- CN1241028A CN1241028A CN99109234A CN99109234A CN1241028A CN 1241028 A CN1241028 A CN 1241028A CN 99109234 A CN99109234 A CN 99109234A CN 99109234 A CN99109234 A CN 99109234A CN 1241028 A CN1241028 A CN 1241028A
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- insulating barrier
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- wiring layer
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- 238000002161 passivation Methods 0.000 title claims abstract description 47
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 42
- 239000001257 hydrogen Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 77
- 239000003990 capacitor Substances 0.000 claims description 44
- 238000005516 engineering process Methods 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 239000004411 aluminium Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 230000002265 prevention Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 44
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 17
- 229910052721 tungsten Inorganic materials 0.000 description 17
- 239000010937 tungsten Substances 0.000 description 17
- 238000001259 photo etching Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- -1 phosphonium ion Chemical class 0.000 description 8
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910001092 metal group alloy Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP181054/98 | 1998-06-26 | ||
JP10181054A JP2000021892A (ja) | 1998-06-26 | 1998-06-26 | 半導体装置の製造方法 |
JP181054/1998 | 1998-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1241028A true CN1241028A (zh) | 2000-01-12 |
CN1127125C CN1127125C (zh) | 2003-11-05 |
Family
ID=16093980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99109234A Expired - Fee Related CN1127125C (zh) | 1998-06-26 | 1999-06-23 | 能有效进行氢钝化的半导体器件的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6194311B1 (zh) |
JP (1) | JP2000021892A (zh) |
KR (1) | KR100320891B1 (zh) |
CN (1) | CN1127125C (zh) |
TW (1) | TW413854B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111863611A (zh) * | 2020-07-30 | 2020-10-30 | 广州粤芯半导体技术有限公司 | 半导体器件的制备方法 |
CN111916394A (zh) * | 2020-08-11 | 2020-11-10 | 广州粤芯半导体技术有限公司 | 半导体器件的制备方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0996160A1 (en) | 1998-10-12 | 2000-04-26 | STMicroelectronics S.r.l. | Contact structure for a semiconductor device |
US20050009209A1 (en) * | 1999-11-10 | 2005-01-13 | Stmicroelectronics S.R.L. | Process for selectively sealing ferroelectric capactive elements incorporated in semiconductor integrated non-volatile memory cells |
IT1314025B1 (it) * | 1999-11-10 | 2002-12-03 | St Microelectronics Srl | Processo per sigillare selettivamente elementi capacitoriferroelettrici compresi in celle di memorie non volatili integrate su |
AUPQ975900A0 (en) * | 2000-08-30 | 2000-09-21 | Unisearch Limited | A process for the fabrication of a quantum computer |
EP1207558A1 (en) * | 2000-11-17 | 2002-05-22 | STMicroelectronics S.r.l. | Contact structure for ferroelectric memory device |
KR20020068569A (ko) * | 2001-02-21 | 2002-08-28 | 동부전자 주식회사 | 반도체 장치의 다층 배선 제조 방법 |
CN100433296C (zh) * | 2001-04-19 | 2008-11-12 | St微电子公司 | 半导体集成器件的接触装置 |
JP3913530B2 (ja) * | 2001-11-09 | 2007-05-09 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2013077711A (ja) * | 2011-09-30 | 2013-04-25 | Sony Corp | 半導体装置および半導体装置の製造方法 |
JP6335436B2 (ja) * | 2013-04-26 | 2018-05-30 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
CN103646916B (zh) * | 2013-11-28 | 2016-03-23 | 上海华力微电子有限公司 | 改善hdp psg工艺的方法及金属沉积前的介电质层制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4151007A (en) * | 1977-10-11 | 1979-04-24 | Bell Telephone Laboratories, Incorporated | Hydrogen annealing process for stabilizing metal-oxide-semiconductor structures |
JPH0740587B2 (ja) * | 1985-12-26 | 1995-05-01 | 松下電子工業株式会社 | 半導体装置の製造方法 |
JPS62174947A (ja) | 1986-01-28 | 1987-07-31 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS648633A (en) * | 1987-07-01 | 1989-01-12 | Hitachi Ltd | Semiconductor device |
JPH01276742A (ja) | 1988-04-28 | 1989-11-07 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH0462974A (ja) | 1990-06-30 | 1992-02-27 | Fuji Xerox Co Ltd | Mos型電界効果トランジスタ及びその製造方法 |
DE69213094T2 (de) * | 1991-05-08 | 1997-03-06 | Philips Electronics Nv | Verfahren zur Herstellung einer Halbleiteranordnung mit einem Kondensator mit einem ferroelektrischen Dieletrikum und Halbleiteranordnung mit einem derartigen Kondensator |
EP0736905B1 (en) * | 1993-08-05 | 2006-01-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having capacitor and manufacturing method thereof |
JP2875733B2 (ja) * | 1994-02-15 | 1999-03-31 | 松下電子工業株式会社 | 半導体装置の製造方法 |
JPH08167605A (ja) * | 1994-12-15 | 1996-06-25 | Mitsubishi Electric Corp | シリコン窒化膜の製造方法 |
JP2751906B2 (ja) * | 1996-01-17 | 1998-05-18 | 日本電気株式会社 | 容量素子の形成方法 |
US5716875A (en) * | 1996-03-01 | 1998-02-10 | Motorola, Inc. | Method for making a ferroelectric device |
US5830575A (en) * | 1996-09-16 | 1998-11-03 | Sandia National Laboratories | Memory device using movement of protons |
US5972765A (en) * | 1997-07-16 | 1999-10-26 | International Business Machines Corporation | Use of deuterated materials in semiconductor processing |
-
1998
- 1998-06-26 JP JP10181054A patent/JP2000021892A/ja active Pending
-
1999
- 1999-06-01 TW TW088109049A patent/TW413854B/zh not_active IP Right Cessation
- 1999-06-04 US US09/325,728 patent/US6194311B1/en not_active Expired - Lifetime
- 1999-06-23 CN CN99109234A patent/CN1127125C/zh not_active Expired - Fee Related
- 1999-06-25 KR KR1019990024149A patent/KR100320891B1/ko not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111863611A (zh) * | 2020-07-30 | 2020-10-30 | 广州粤芯半导体技术有限公司 | 半导体器件的制备方法 |
CN111863611B (zh) * | 2020-07-30 | 2022-02-08 | 广州粤芯半导体技术有限公司 | 半导体器件的制备方法 |
CN111916394A (zh) * | 2020-08-11 | 2020-11-10 | 广州粤芯半导体技术有限公司 | 半导体器件的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2000021892A (ja) | 2000-01-21 |
KR20000006450A (ko) | 2000-01-25 |
TW413854B (en) | 2000-12-01 |
US6194311B1 (en) | 2001-02-27 |
CN1127125C (zh) | 2003-11-05 |
KR100320891B1 (ko) | 2002-02-06 |
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Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NONE Effective date: 20030425 |
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Owner name: ERBIDA MEMORY CO., LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD.; NEC ELECTRONICS TAIWAN LTD. Effective date: 20070302 |
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