CN1234960A - 在不导电载体材料上的电路结构,特别是精细电路结构,及其制造方法 - Google Patents

在不导电载体材料上的电路结构,特别是精细电路结构,及其制造方法 Download PDF

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CN1234960A
CN1234960A CN98801024A CN98801024A CN1234960A CN 1234960 A CN1234960 A CN 1234960A CN 98801024 A CN98801024 A CN 98801024A CN 98801024 A CN98801024 A CN 98801024A CN 1234960 A CN1234960 A CN 1234960A
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格哈德·瑙恩多夫
霍斯特·维斯布洛克
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Abstract

本发明涉及位于不导电载体材料上的电路结构,特别是由含重金属的基底和附着在所述基底上的金属化膜组成的精细电路结构。还涉及生产这种结构的工艺。本发明的特征在于在电路结构中的所述区域的重金属基底包含重金属核,这些重金属核由一种不导电的有机重金属配合物裂解形成,载体材料包含多微孔的微观粗糙的载体颗粒,那些重金属核附着在这些颗粒上。本方法获得了具有极佳结合的沉淀金属电路。该方法也特别适合于生产三维电路基板。

Description

在不导电载体材料上的电路结构，特别 是精细电路结构，及其制造方法
本发明涉及到在不导电载体材料上的电路结构，特别是根据权利要求8的前序部分的精细电路结构。
从＂用于精细导体金属化的激光辅助的镀层工艺＂(LAD-Einneuartiges lasergestutztes Beschichtungsverfahren furFeinstleitermetallisierungen)，摘自＂Galvanotechnik＂的第81卷(1990)第10期，人们已经知道，为了生产显著低于100mm的非常精细的导线结构，以溶液薄膜形式将醋酸钯涂覆到全部表面。随后采用准分子激光器以波长248nm进行激光处理，金属原子然后释放到产生电路结构的区域，作为后续的非电金属化的核心。然而，在金属化之前，有必要进行冲洗，以去除淀积到载体材料上的未结合区域的金属膜。对于防止随后非电金属化过程中出现异常生长，这种清洗的质量具有决定性作用。人们发现采用前述方法，无论如何也不能得到具有牢固结合力的沉淀金属电路。
本发明致力于获得制造简单而可靠的精细电路结构，特别是还在三维电路基板上，更进一步，涉及的是一种制造电路结构的实质上简化而可靠的方法，这种方法通过选择性表面活化和还原性铜淀积获得精细结构。
这个目的通过权利要求1和8的特征部分得到实现。本发明其它的实施方案在从属权利要求中得以体现。
因为载体材料的重金属基底中包括重金属核，这些核是通过施加到载体材料的多微孔状表面上的一种电绝缘的有机重金属配合物的分解而形成的，所以可以直接进行金属化，而不必为了避免异常生长将含重金属的未处理基底区域去除。
另外，获得了结合力特别好的沉淀金属电路，因为载体材料包括能够结合重金属核的多微孔的和微观粗糙的载体颗粒。在金属化过程中，通过生长在孔隙中的铜，得到了一个牢固的基底，从而确保了在电路载体上形成的导线具有最佳结合力。
提供结合力的多微孔物质由于下列原因更加易于得到：载体材料由其中埋入了用于重金属核的多微孔的或微观粗糙的载体颗粒的聚合物基质组成，通过用紫外辐照表面通过烧蚀所述聚合物使这些载体颗粒显露出来，因为它们本身受到紫外辐照并不分解。因此，通过化学还原作用，工件可以直接金属化。因而，根据本发明，辐射操作有两重效果，一方面，为了金属附着必要的多微孔和显微粗糙性得以暴露出来，另一方面，通过使有机非导电重金属配合物的裂解，释放了重金属核。
由于在本发明方法中，一种有机非导电重金属配合物作为重金属组分被结合到多微孔性载体颗粒上，这些载体颗粒混入到要产生的电路结构的区域上的载体材料中，和/或将它们引入并结合到载体材料上，电磁UV辐射选择性地施加到要产生电路结构的区域上，这样，由于辐射烧蚀作用而暴露出载体颗粒，并通过附着其上的重金属配合物的裂解而释放出重金属核，这块区域接着通过化学还原作用而金属化以形成电路结构，一方面，由于金属的附着的需要，多微孔和微观粗糙状态得以露出，另一方面，由于所述有机非导电重金属配合物的裂解，释放出必要的重金属原子。
最好在电磁UV辐射后立即进行化学还原金属化。不必进行会带来问题的清洗过程。UV辐射在要产生电路结构的区域引发重金属配合物的裂解，由此裂解出对于部分还原金属化具有非常高反应活性的重金属核。并且金属化过程中不发生任何异常生长，形成清晰的边界。重金属核的高反应活性还有利于得到具有必要厚度的适宜的精确的金属化。
在本发明的范围内，对于使用UV激光器、准分子激光器或UV辐射器的电磁辐射进行了防护工作。根据本发明优选的实施方案，使用波长为248nm的KrF准分子激光器，以便暴露出多微孔状填料颗粒并裂解出重金属核。
优选使用一种钯配合物或含钯重金属配合物。如已发现的那样，根据本发明的方法，这种重金属配合物是特别适用于形成非常精细结构。尤其是，与用于所述烧蚀或者还用于引发在已知系统中描述为降解的作用机制所要求的能量密度相比，一个显著低的能量密度的紫外辐射已足以引起结构裂解反应。另外，已发现就所述结构的形成而言，每个激光脉冲比已知烧蚀方法暴露出更大的区域。
在本发明的范围中，可以使用波长为248nm的krF准分子激光器裂解重金属配合物以获得重金属核。因而，有可能不加热所述配合物而进行所述裂解。这避免了在作用区域材料发生任何熔化。结果形成了具有裂解的重金属核区域的鲜明边界，从而在金属化了的结构中形成了极为清晰的并且极为有利的边界清晰度，这尤其对非常精细导线具有很大意义。
根据优选的实施方案，二乙酸钯与一种有机配合剂反应，形成钯配合物。已经发现，最好使用高稳定的多官能螯合剂，它本身已知，它具有多个配体原子如N、O、S或P。在本发明的范围内，还假定所述多官能螯合剂可结合有离子化基团，如羟基或者羧基基团。
特别是，具有空间位阻的芳香族化合物和金属配合基团的分子结合体可以用作有机配合剂。在那种情况下，使用具有下式的有机金属配合剂：
Figure A9880102400071
最好使用抗电磁紫外线辐射的载体颗粒作为所述重金属配合物的载体。它们优选是通过热解硅酸和气凝胶而形成的无机-矿物载体颗粒。
根据本发明优选的实施方案，载体颗粒由BET表面为200m2/g的热解硅酸或者由气凝胶形成。
更进一步，在本发明的范围内，通过将载体颗粒渗入重金属配合物溶液中，使重金属配合物附着到载体颗粒上。然后，这样制备的载体颗粒混入聚合物材料中，对该聚合物材料进行注模成型以形成电路基板。或者，带有重金属配合物的载体颗粒混入粘合剂，特别是漆，接着以涂层形式涂覆到载体材料上。
本发明的方法，既可以通过直接用激光辐射并在流水线大规模生产中利用掩膜而得以应用；也可以不使用掩膜，而通过数字控制下引导点聚焦激光束而得以应用，例如用于制造样品或者小系列产品时。
本发明通过下面一个实施方案描述。
2.24质量份的二乙酸钯溶入至100质量份的二甲基甲酰胺中。此外，2.94质量份具有下式
Figure A9880102400081
的有机配合剂加入到800质量份的二甲基甲酰胺中并加热溶解。然后两种溶液混合并反应。之后立即，在溶液冷却和钯配合物沉淀出来前，将所述溶液渗入由热解硅酸组成的载体颗粒，所述热解硅酸可按＂Aerosil 200＂购得。经过干燥和研磨，在一个常规的处理后过程，载体颗粒以比例不超过50％混入到一批聚合物粉料中。所述材料在热混合器中团聚后，在造粒器中造粒。该塑性小颗粒此时在掺入的载体颗粒的孔结构中包含了必要量的有机重金属配合物。这些小颗粒随后注模成型为三维电路基板。
接着采用波长248nm的准分子激光器通过掩膜对所述电路基板进行紫外辐射。在受到辐射的区域内，由于围绕载体颗粒的聚合物发生烧蚀，载体颗粒暴露出来，而且在载体颗粒的孔中，非常精细分隔的金属钯从重金属配合物中裂解出来。在没有外能量供给条件下，在常规工业反应铜浴液中，铜以非常牢固的附着方式，选择性地淀积在受辐射的区域。电路形成了并得到了现成的电路基板。
或者，也可使用气凝胶作为载体颗粒。具有高达1000m2/g的BET表面积的高度多孔性固体SiO2，可以使金属电路与电路基板的结合力更强。

Claims (24)

1．位于不导电载体材料上的电路结构，特别是精细电路结构，所述结构由重金属基底和附着在该基底上的金属化层组成，所述结构的特征在于在电路结构中所述重金属基底包含重金属核，这些重金属核由一种不导电的有机重金属配合物裂解形成，而且还在于所述载体材料包含多微孔的微观粗糙的载体颗粒，那些重金属核附着在这些颗粒上。
2．根据权利要求l的电路结构，其特征在于所述载体材料由埋入了或结合了多微孔或微观粗糙的载体颗粒的聚合物基质组成，所述重金属原子核附着到这些颗粒上。
3．根据权利要求1和任选的权利要求2的电路结构，其特征在于所述载体颗粒由热解的硅酸或气凝胶形成。
4．根据权利要求1和一项或多项另外的权利要求的电路结构，其特征在于所述载体颗粒由BET表面为200m2/g的热解硅酸形成。
5．根据权利要求1和一项或多项另外的权利要求的电路结构，其特征在于所述载体颗粒由气凝胶形成。
6．根据权利要求1和一项或多项另外的权利要求的电路结构，其特征在于所述重金属配合物是一种含钯的重金属配合物。
7．根据权利要求1和一项或多项另外的权利要求的电路结构，其特征在于所述重金属配合物是一种钯配合物。
8．制造根据权利要求1的电路结构的方法，其中将包含重金属的一种成份施加到不导电的载体材料上，在紫外范围波长的电磁辐射选择性地作用到要产生电路结构的区域，在该区域释放重金属核，而且该区域通过化学还原作用发生金属化，该方法的特征在于：
一种不导电的有机重金属配合物结合到多微孔的或微观粗糙的载体颗粒上，
在要产生电路结构的区域中的载体颗粒被混入到载体材料中去，和/或所述颗粒引入到并附着到所述载体材料上，
电磁紫外辐射选择性地作用到要产生电路结构的区域中的载体材料上，从而由于烧蚀使载体颗粒暴露出来并通过所附着的重金属配合物的裂解而释放重金属核，
随后所述区域通过化学还原发生金属化形成电路结构。
9．根据权利要求8的方法，其特征在于使用了紫外激光器、准分子激光器或紫外辐射器的电磁辐射作用。
10．根据权利要8的方法，其特征在于为了多微孔质的填料颗粒并裂解形成重金属核，使用了248nm波长的KrF准分子激光器。
11．根据权利要求8和一项或多项另外的权利要求的方法，其特征在于使用了含钯的重金属配合物。
12．根据权利要求11的方法，其特征在于使用了钯配合物。
13．根据权利要求12的方法，其特征在于所述钯配合物通过一种钯盐与一种有机配合物反应形成。
14．根据权利要求8的方法，其特征在于所述钯配合物通过二乙酸钯与一种有机配合剂反应并将其结晶出而形成。
15．根据权利要求14的方法，其特征在于使用了一种高稳定的多官能螯合剂，它具有多个配体原子如N、O、S或P，或所述多官能螯合剂还结合了离子化基团如羟基或者羧基基团。
16．根据权利要求14和15的方法，其特征在于具有空间位阻的芳香族化合物和金属配合基团的分子结合体用作有机配合剂。
17．根据权利要求14,15和16的方法，其特征在于使用具有下式的有机金属配合剂：
Figure A9880102400031
18．根据权利要求8和一项或多项另外的权利要求的方法，其特征在于使用了抗紫外辐射的载体颗粒。
19．根据权利要求8和一项或多项另外的权利要求的方法，其特征在于使用了无机-矿物载体颗粒。
20．根据权利要求19的方法，其特征在于所述载体颗粒通过热解的硅酸或通过气凝胶形成。
21．根据权利要求20的方法，其特征在于所述载体颗粒由BET表面为200m2/g的热解硅酸形成。
22．根据权利20的方法，其特征在于所述载体颗粒由气凝胶形成。
23．根据权利8和一项或多项另外的权利要求的方法，其特征在于通过将填充颗粒渗入有重金属配合物溶液而使重金属配合物结合到填充颗粒上。
24．根据权利要求8和一项或多项另外的权利要求的方法，其特征在于与重金属配合物一起将载体颗粒混入粘合剂中，特别是漆中，接着以涂层形式涂覆到载体材料上。
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ATE369726T1 (de) 2007-08-15
KR20000068595A (ko) 2000-11-25
JP2000503817A (ja) 2000-03-28
DE59814073D1 (de) 2007-09-20
US6696173B1 (en) 2004-02-24
DE19731346A1 (de) 1999-03-04
EP0927507B1 (de) 2007-08-08
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