CN1234960A - 在不导电载体材料上的电路结构,特别是精细电路结构,及其制造方法 - Google Patents

在不导电载体材料上的电路结构,特别是精细电路结构,及其制造方法 Download PDF

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CN1234960A
CN1234960A CN98801024A CN98801024A CN1234960A CN 1234960 A CN1234960 A CN 1234960A CN 98801024 A CN98801024 A CN 98801024A CN 98801024 A CN98801024 A CN 98801024A CN 1234960 A CN1234960 A CN 1234960A
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格哈德·瑙恩多夫
霍斯特·维斯布洛克
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    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
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Abstract

本发明涉及位于不导电载体材料上的电路结构,特别是由含重金属的基底和附着在所述基底上的金属化膜组成的精细电路结构。还涉及生产这种结构的工艺。本发明的特征在于在电路结构中的所述区域的重金属基底包含重金属核,这些重金属核由一种不导电的有机重金属配合物裂解形成,载体材料包含多微孔的微观粗糙的载体颗粒,那些重金属核附着在这些颗粒上。本方法获得了具有极佳结合的沉淀金属电路。该方法也特别适合于生产三维电路基板。

Description

在不导电载体材料上的电路结构，特别 是精细电路结构，及其制造方法
本发明涉及到在不导电载体材料上的电路结构，特别是根据权利要求8的前序部分的精细电路结构。
从＂用于精细导体金属化的激光辅助的镀层工艺＂(LAD-Einneuartiges lasergestutztes Beschichtungsverfahren furFeinstleitermetallisierungen)，摘自＂Galvanotechnik＂的第81卷(1990)第10期，人们已经知道，为了生产显著低于100mm的非常精细的导线结构，以溶液薄膜形式将醋酸钯涂覆到全部表面。随后采用准分子激光器以波长248nm进行激光处理，金属原子然后释放到产生电路结构的区域，作为后续的非电金属化的核心。然而，在金属化之前，有必要进行冲洗，以去除淀积到载体材料上的未结合区域的金属膜。对于防止随后非电金属化过程中出现异常生长，这种清洗的质量具有决定性作用。人们发现采用前述方法，无论如何也不能得到具有牢固结合力的沉淀金属电路。
本发明致力于获得制造简单而可靠的精细电路结构，特别是还在三维电路基板上，更进一步，涉及的是一种制造电路结构的实质上简化而可靠的方法，这种方法通过选择性表面活化和还原性铜淀积获得精细结构。
这个目的通过权利要求1和8的特征部分得到实现。本发明其它的实施方案在从属权利要求中得以体现。
因为载体材料的重金属基底中包括重金属核，这些核是通过施加到载体材料的多微孔状表面上的一种电绝缘的有机重金属配合物的分解而形成的，所以可以直接进行金属化，而不必为了避免异常生长将含重金属的未处理基底区域去除。
另外，获得了结合力特别好的沉淀金属电路，因为载体材料包括能够结合重金属核的多微孔的和微观粗糙的载体颗粒。在金属化过程中，通过生长在孔隙中的铜，得到了一个牢固的基底，从而确保了在电路载体上形成的导线具有最佳结合力。
提供结合力的多微孔物质由于下列原因更加易于得到：载体材料由其中埋入了用于重金属核的多微孔的或微观粗糙的载体颗粒的聚合物基质组成，通过用紫外辐照表面通过烧蚀所述聚合物使这些载体颗粒显露出来，因为它们本身受到紫外辐照并不分解。因此，通过化学还原作用，工件可以直接金属化。因而，根据本发明，辐射操作有两重效果，一方面，为了金属附着必要的多微孔和显微粗糙性得以暴露出来，另一方面，通过使有机非导电重金属配合物的裂解，释放了重金属核。
由于在本发明方法中，一种有机非导电重金属配合物作为重金属组分被结合到多微孔性载体颗粒上，这些载体颗粒混入到要产生的电路结构的区域上的载体材料中，和/或将它们引入并结合到载体材料上，电磁UV辐射选择性地施加到要产生电路结构的区域上，这样，由于辐射烧蚀作用而暴露出载体颗粒，并通过附着其上的重金属配合物的裂解而释放出重金属核，这块区域接着通过化学还原作用而金属化以形成电路结构，一方面，由于金属的附着的需要，多微孔和微观粗糙状态得以露出，另一方面，由于所述有机非导电重金属配合物的裂解，释放出必要的重金属原子。
最好在电磁UV辐射后立即进行化学还原金属化。不必进行会带来问题的清洗过程。UV辐射在要产生电路结构的区域引发重金属配合物的裂解，由此裂解出对于部分还原金属化具有非常高反应活性的重金属核。并且金属化过程中不发生任何异常生长，形成清晰的边界。重金属核的高反应活性还有利于得到具有必要厚度的适宜的精确的金属化。
在本发明的范围内，对于使用UV激光器、准分子激光器或UV辐射器的电磁辐射进行了防护工作。根据本发明优选的实施方案，使用波长为248nm的KrF准分子激光器，以便暴露出多微孔状填料颗粒并裂解出重金属核。
优选使用一种钯配合物或含钯重金属配合物。如已发现的那样，根据本发明的方法，这种重金属配合物是特别适用于形成非常精细结构。尤其是，与用于所述烧蚀或者还用于引发在已知系统中描述为降解的作用机制所要求的能量密度相比，一个显著低的能量密度的紫外辐射已足以引起结构裂解反应。另外，已发现就所述结构的形成而言，每个激光脉冲比已知烧蚀方法暴露出更大的区域。
在本发明的范围中，可以使用波长为248nm的krF准分子激光器裂解重金属配合物以获得重金属核。因而，有可能不加热所述配合物而进行所述裂解。这避免了在作用区域材料发生任何熔化。结果形成了具有裂解的重金属核区域的鲜明边界，从而在金属化了的结构中形成了极为清晰的并且极为有利的边界清晰度，这尤其对非常精细导线具有很大意义。
根据优选的实施方案，二乙酸钯与一种有机配合剂反应，形成钯配合物。已经发现，最好使用高稳定的多官能螯合剂，它本身已知，它具有多个配体原子如N、O、S或P。在本发明的范围内，还假定所述多官能螯合剂可结合有离子化基团，如羟基或者羧基基团。
特别是，具有空间位阻的芳香族化合物和金属配合基团的分子结合体可以用作有机配合剂。在那种情况下，使用具有下式的有机金属配合剂：
Figure A9880102400071
最好使用抗电磁紫外线辐射的载体颗粒作为所述重金属配合物的载体。它们优选是通过热解硅酸和气凝胶而形成的无机-矿物载体颗粒。
根据本发明优选的实施方案，载体颗粒由BET表面为200m2/g的热解硅酸或者由气凝胶形成。
更进一步，在本发明的范围内，通过将载体颗粒渗入重金属配合物溶液中，使重金属配合物附着到载体颗粒上。然后，这样制备的载体颗粒混入聚合物材料中，对该聚合物材料进行注模成型以形成电路基板。或者，带有重金属配合物的载体颗粒混入粘合剂，特别是漆，接着以涂层形式涂覆到载体材料上。
本发明的方法，既可以通过直接用激光辐射并在流水线大规模生产中利用掩膜而得以应用；也可以不使用掩膜，而通过数字控制下引导点聚焦激光束而得以应用，例如用于制造样品或者小系列产品时。
本发明通过下面一个实施方案描述。
2.24质量份的二乙酸钯溶入至100质量份的二甲基甲酰胺中。此外，2.94质量份具有下式
Figure A9880102400081
的有机配合剂加入到800质量份的二甲基甲酰胺中并加热溶解。然后两种溶液混合并反应。之后立即，在溶液冷却和钯配合物沉淀出来前，将所述溶液渗入由热解硅酸组成的载体颗粒，所述热解硅酸可按＂Aerosil 200＂购得。经过干燥和研磨，在一个常规的处理后过程，载体颗粒以比例不超过50％混入到一批聚合物粉料中。所述材料在热混合器中团聚后，在造粒器中造粒。该塑性小颗粒此时在掺入的载体颗粒的孔结构中包含了必要量的有机重金属配合物。这些小颗粒随后注模成型为三维电路基板。
接着采用波长248nm的准分子激光器通过掩膜对所述电路基板进行紫外辐射。在受到辐射的区域内，由于围绕载体颗粒的聚合物发生烧蚀，载体颗粒暴露出来，而且在载体颗粒的孔中，非常精细分隔的金属钯从重金属配合物中裂解出来。在没有外能量供给条件下，在常规工业反应铜浴液中，铜以非常牢固的附着方式，选择性地淀积在受辐射的区域。电路形成了并得到了现成的电路基板。
或者，也可使用气凝胶作为载体颗粒。具有高达1000m2/g的BET表面积的高度多孔性固体SiO2，可以使金属电路与电路基板的结合力更强。

Claims (24)

1．位于不导电载体材料上的电路结构，特别是精细电路结构，所述结构由重金属基底和附着在该基底上的金属化层组成，所述结构的特征在于在电路结构中所述重金属基底包含重金属核，这些重金属核由一种不导电的有机重金属配合物裂解形成，而且还在于所述载体材料包含多微孔的微观粗糙的载体颗粒，那些重金属核附着在这些颗粒上。
2．根据权利要求l的电路结构，其特征在于所述载体材料由埋入了或结合了多微孔或微观粗糙的载体颗粒的聚合物基质组成，所述重金属原子核附着到这些颗粒上。
3．根据权利要求1和任选的权利要求2的电路结构，其特征在于所述载体颗粒由热解的硅酸或气凝胶形成。
4．根据权利要求1和一项或多项另外的权利要求的电路结构，其特征在于所述载体颗粒由BET表面为200m2/g的热解硅酸形成。
5．根据权利要求1和一项或多项另外的权利要求的电路结构，其特征在于所述载体颗粒由气凝胶形成。
6．根据权利要求1和一项或多项另外的权利要求的电路结构，其特征在于所述重金属配合物是一种含钯的重金属配合物。
7．根据权利要求1和一项或多项另外的权利要求的电路结构，其特征在于所述重金属配合物是一种钯配合物。
8．制造根据权利要求1的电路结构的方法，其中将包含重金属的一种成份施加到不导电的载体材料上，在紫外范围波长的电磁辐射选择性地作用到要产生电路结构的区域，在该区域释放重金属核，而且该区域通过化学还原作用发生金属化，该方法的特征在于：
一种不导电的有机重金属配合物结合到多微孔的或微观粗糙的载体颗粒上，
在要产生电路结构的区域中的载体颗粒被混入到载体材料中去，和/或所述颗粒引入到并附着到所述载体材料上，
电磁紫外辐射选择性地作用到要产生电路结构的区域中的载体材料上，从而由于烧蚀使载体颗粒暴露出来并通过所附着的重金属配合物的裂解而释放重金属核，
随后所述区域通过化学还原发生金属化形成电路结构。
9．根据权利要求8的方法，其特征在于使用了紫外激光器、准分子激光器或紫外辐射器的电磁辐射作用。
10．根据权利要8的方法，其特征在于为了多微孔质的填料颗粒并裂解形成重金属核，使用了248nm波长的KrF准分子激光器。
11．根据权利要求8和一项或多项另外的权利要求的方法，其特征在于使用了含钯的重金属配合物。
12．根据权利要求11的方法，其特征在于使用了钯配合物。
13．根据权利要求12的方法，其特征在于所述钯配合物通过一种钯盐与一种有机配合物反应形成。
14．根据权利要求8的方法，其特征在于所述钯配合物通过二乙酸钯与一种有机配合剂反应并将其结晶出而形成。
15．根据权利要求14的方法，其特征在于使用了一种高稳定的多官能螯合剂，它具有多个配体原子如N、O、S或P，或所述多官能螯合剂还结合了离子化基团如羟基或者羧基基团。
16．根据权利要求14和15的方法，其特征在于具有空间位阻的芳香族化合物和金属配合基团的分子结合体用作有机配合剂。
17．根据权利要求14,15和16的方法，其特征在于使用具有下式的有机金属配合剂：
Figure A9880102400031
18．根据权利要求8和一项或多项另外的权利要求的方法，其特征在于使用了抗紫外辐射的载体颗粒。
19．根据权利要求8和一项或多项另外的权利要求的方法，其特征在于使用了无机-矿物载体颗粒。
20．根据权利要求19的方法，其特征在于所述载体颗粒通过热解的硅酸或通过气凝胶形成。
21．根据权利要求20的方法，其特征在于所述载体颗粒由BET表面为200m2/g的热解硅酸形成。
22．根据权利20的方法，其特征在于所述载体颗粒由气凝胶形成。
23．根据权利8和一项或多项另外的权利要求的方法，其特征在于通过将填充颗粒渗入有重金属配合物溶液而使重金属配合物结合到填充颗粒上。
24．根据权利要求8和一项或多项另外的权利要求的方法，其特征在于与重金属配合物一起将载体颗粒混入粘合剂中，特别是漆中，接着以涂层形式涂覆到载体材料上。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1326435C (zh) * 2001-07-05 2007-07-11 Lpkf激光和电子股份公司 导体轨道结构的制造方法
CN102308375A (zh) * 2008-09-18 2012-01-04 视声公司 用于制造超声换能器和其他部件的方法
CN103328684A (zh) * 2010-11-23 2013-09-25 新型材料莱布尼兹研究所公益性有限责任公司 用于制备金属结构的方法
CN107577379A (zh) * 2016-07-04 2018-01-12 现代自动车株式会社 触控装置和用于控制触控装置的方法
US9935254B2 (en) 2008-09-18 2018-04-03 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
US10596597B2 (en) 2008-09-18 2020-03-24 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components

Families Citing this family (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284563B1 (en) 1995-10-31 2001-09-04 Tessera, Inc. Method of making compliant microelectronic assemblies
CN1294639A (zh) * 1998-12-10 2001-05-09 格哈德·瑙恩多夫 线路结构的生产方法
DE19927749A1 (de) 1999-06-17 2000-12-28 Siemens Ag Elektronische Anordnung mit flexiblen Kontaktierungsstellen
KR20020011440A (ko) 1999-06-17 2002-02-08 마이클 골위저, 호레스트 쉐퍼 가요성 접점을 구비한 전자 소자 및 그 전자 소자의 제조방법
DE19943385B4 (de) * 1999-09-10 2006-06-14 Infineon Technologies Ag Verfahren zur Herstellung einer elektrischen Verbindung zwischen der Vorder- und Rückseite von Halbleiterchips
DE10016132A1 (de) 2000-03-31 2001-10-18 Infineon Technologies Ag Elektronisches Bauelement mit flexiblen Kontaktierungsstellen und Verfahren zu dessen Herstellung
EP1281953B1 (en) * 2000-04-06 2012-08-01 Hamamatsu Photonics K.K. X-ray inspection system
DE10125570B4 (de) * 2001-05-25 2008-09-25 Ticona Gmbh Verfahren zum Verbinden von Leiterbahnen mit Kunststoffoberflächen
DE10132092A1 (de) * 2001-07-05 2003-01-23 Lpkf Laser & Electronics Ag Leiterbahnstrukturen und Verfahren zu ihrer Herstellung
DE102004017440A1 (de) * 2004-04-08 2005-11-03 Enthone Inc., West Haven Verfahren zur Behandlung von laserstrukturierten Kunststoffoberflächen
US20060083939A1 (en) * 2004-10-20 2006-04-20 Dunbar Meredith L Light activatable polyimide compositions for receiving selective metalization, and methods and compositions related thereto
US8323802B2 (en) * 2004-10-20 2012-12-04 E I Du Pont De Nemours And Company Light activatable polyimide compositions for receiving selective metalization, and methods and compositions related thereto
DE102004052301A1 (de) * 2004-10-27 2006-05-11 Jens Freye Verfahren zur Herstellung von Leiterbahnstrukturen
DE102004052303A1 (de) * 2004-10-27 2006-05-11 Jens Freye Verfahren zur Herstellung von Funktionselementstrukturen
DE102004052300A1 (de) * 2004-10-27 2006-05-11 Jens Freye Verfahren zur Herstellung von Leiterbahnstrukturen
US7569331B2 (en) * 2005-06-01 2009-08-04 Hewlett-Packard Development Company, L.P. Conductive patterning
DE102006017630A1 (de) * 2006-04-12 2007-10-18 Lpkf Laser & Electronics Ag Verfahren zur Herstellung einer Leiterbahnstruktur sowie eine derart hergestellte Leiterbahnstruktur
KR100712346B1 (ko) 2006-06-30 2007-05-02 주식회사 이엠따블유안테나 3차원 형상의 안테나
US9867530B2 (en) 2006-08-14 2018-01-16 Volcano Corporation Telescopic side port catheter device with imaging system and method for accessing side branch occlusions
KR101309332B1 (ko) 2006-08-17 2013-09-16 주식회사 이엠따블유 플라스틱 사출물에 안테나 패턴을 형성하는 방법 및 그에의해 제조된 안테나 패턴을 포함하는 사출물
DE102006053982B4 (de) * 2006-11-10 2009-10-29 Infineon Technologies Ag Dreidimensionale Trägerstruktur für elektrische oder optoelektronische Bauteile mit einer elektromagnetischen Schirmungsstruktur, elektronische oder optoelektronische Baugruppe mit einer dreidimensionalen Trägerstruktur, Verfahren zur Herstellung einer dreidimensionalen Trägerstruktur für elektrische oder optoelektronische Bauteile mit einer elektromagnetischen Schirmungsstruktur
CN101765741B (zh) 2007-05-25 2012-07-04 莫列斯公司 用于发热装置与电源的散热器
US8475924B2 (en) * 2007-07-09 2013-07-02 E.I. Du Pont De Nemours And Company Compositions and methods for creating electronic circuitry
WO2009009802A1 (en) 2007-07-12 2009-01-15 Volcano Corporation Oct-ivus catheter for concurrent luminal imaging
US9596993B2 (en) 2007-07-12 2017-03-21 Volcano Corporation Automatic calibration systems and methods of use
JP5524835B2 (ja) 2007-07-12 2014-06-18 ヴォルカノ コーポレイション 生体内撮像用カテーテル
CN101940072A (zh) * 2007-12-21 2011-01-05 莫列斯公司 带有集成连接器的镀覆绝缘框架
PL2233519T3 (pl) 2009-03-27 2012-01-31 Lanxess Deutschland Gmbh Poliester odporny na żarzący się drut
CN102978593B (zh) * 2009-12-17 2015-07-22 比亚迪股份有限公司 塑料表面选择性金属化的方法
DK2584065T3 (da) * 2009-12-17 2014-07-14 Byd Co Ltd Overflademetalliseringsmetode, metode til fremstilling af plastgenstand og plastgenstand fremstillet derved
US9435035B2 (en) * 2010-01-15 2016-09-06 Byd Company Limited Metalized plastic articles and methods thereof
CN102071424B (zh) * 2010-02-26 2012-05-09 比亚迪股份有限公司 一种塑料制品的制备方法及一种塑料制品
US20120273261A1 (en) 2010-10-20 2012-11-01 Taiwan Green Point Enterprises Co., Ltd. Circuit substrate having a circuit pattern and method for making the same
US8952919B2 (en) 2011-02-25 2015-02-10 Taiwan Green Point Enterprises Co., Ltd. Capacitive touch sensitive housing and method for making the same
US8621749B2 (en) 2010-03-12 2014-01-07 Taiwan Green Point Enterprises Co., Ltd Non-deleterious technique for creating continuous conductive circuits
DE202010005663U1 (de) * 2010-06-17 2010-09-30 Dr. Schneider Kunststoffwerke Gmbh Kunststoffteil zur Verwendung im Innenraum eines Kraftfahrzeuges
CN102071411B (zh) 2010-08-19 2012-05-30 比亚迪股份有限公司 一种塑料制品的制备方法及一种塑料制品
FR2965822A1 (fr) * 2010-10-07 2012-04-13 Valeo Securite Habitacle Procede de fabrication et de decoration par metallisation de pieces d'aspect pour vehicule automobile
US11141063B2 (en) 2010-12-23 2021-10-12 Philips Image Guided Therapy Corporation Integrated system architectures and methods of use
US11040140B2 (en) 2010-12-31 2021-06-22 Philips Image Guided Therapy Corporation Deep vein thrombosis therapeutic methods
DE102011000138A1 (de) * 2011-01-14 2012-07-19 Lpkf Laser & Electronics Ag Verfahren zur selektiven Metallisierung eines Substrats sowie ein nach diesem Verfahren hergestellter Schaltungsträger
TWI531601B (zh) 2011-03-18 2016-05-01 三菱化學歐洲股份有限公司 A thermoplastic resin composition, a resin molded product, and a resin molded article having a plating layer
DE102011007537A1 (de) 2011-04-15 2012-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. In einem Kunststoffkörper eingebettetes Funktionselement und Verfahren zur elektrischen Kontaktierung eines in einem Kunststoffkörper eingebetteten Funktionselements
WO2013033489A1 (en) 2011-08-31 2013-03-07 Volcano Corporation Optical rotary joint and methods of use
WO2013066663A2 (en) 2011-10-31 2013-05-10 Ticona Llc Thermoplastic composition for use in forming a laser direct structured substrate
JP5340513B1 (ja) 2012-03-23 2013-11-13 三菱エンジニアリングプラスチックス株式会社 熱可塑性樹脂組成物、樹脂成形品、及びメッキ層付樹脂成形品の製造方法
US9374650B2 (en) 2012-07-17 2016-06-21 Starkey Laboratories, Inc. System and method for embedding conductive traces into hearing assistance device housings
EP2896659B1 (en) 2012-09-14 2018-08-15 Mitsubishi Engineering-Plastics Corporation Thermoplastic resin composition, resin molded article, and method for producing resin molded article having a plated layer
JP6190811B2 (ja) 2012-09-14 2017-08-30 三菱エンジニアリングプラスチックス株式会社 熱可塑性樹脂組成物、樹脂成形品、及びメッキ層付樹脂成形品の製造方法
WO2014042071A1 (ja) 2012-09-14 2014-03-20 三菱エンジニアリングプラスチックス株式会社 熱可塑性樹脂組成物、樹脂成形品、及びメッキ層付樹脂成形品の製造方法
US11272845B2 (en) 2012-10-05 2022-03-15 Philips Image Guided Therapy Corporation System and method for instant and automatic border detection
US9367965B2 (en) 2012-10-05 2016-06-14 Volcano Corporation Systems and methods for generating images of tissue
US9292918B2 (en) 2012-10-05 2016-03-22 Volcano Corporation Methods and systems for transforming luminal images
US10070827B2 (en) 2012-10-05 2018-09-11 Volcano Corporation Automatic image playback
US9324141B2 (en) 2012-10-05 2016-04-26 Volcano Corporation Removal of A-scan streaking artifact
JP2015532536A (ja) 2012-10-05 2015-11-09 デイビッド ウェルフォード， 光を増幅するためのシステムおよび方法
US9307926B2 (en) 2012-10-05 2016-04-12 Volcano Corporation Automatic stent detection
US9286673B2 (en) 2012-10-05 2016-03-15 Volcano Corporation Systems for correcting distortions in a medical image and methods of use thereof
US9858668B2 (en) 2012-10-05 2018-01-02 Volcano Corporation Guidewire artifact removal in images
US10568586B2 (en) 2012-10-05 2020-02-25 Volcano Corporation Systems for indicating parameters in an imaging data set and methods of use
US9840734B2 (en) 2012-10-22 2017-12-12 Raindance Technologies, Inc. Methods for analyzing DNA
CA2894403A1 (en) 2012-12-13 2014-06-19 Volcano Corporation Devices, systems, and methods for targeted cannulation
US10942022B2 (en) 2012-12-20 2021-03-09 Philips Image Guided Therapy Corporation Manual calibration of imaging system
CA2895770A1 (en) 2012-12-20 2014-07-24 Jeremy Stigall Locating intravascular images
US11406498B2 (en) 2012-12-20 2022-08-09 Philips Image Guided Therapy Corporation Implant delivery system and implants
US10939826B2 (en) 2012-12-20 2021-03-09 Philips Image Guided Therapy Corporation Aspirating and removing biological material
CA2895989A1 (en) 2012-12-20 2014-07-10 Nathaniel J. Kemp Optical coherence tomography system that is reconfigurable between different imaging modes
CA2895502A1 (en) 2012-12-20 2014-06-26 Jeremy Stigall Smooth transition catheters
JP2016508233A (ja) 2012-12-21 2016-03-17 ナサニエル ジェイ． ケンプ， 光学スイッチを用いた電力効率のよい光学バッファリング
US9486143B2 (en) 2012-12-21 2016-11-08 Volcano Corporation Intravascular forward imaging device
US9612105B2 (en) 2012-12-21 2017-04-04 Volcano Corporation Polarization sensitive optical coherence tomography system
JP2016508757A (ja) 2012-12-21 2016-03-24 ジェイソン スペンサー， 医療データのグラフィカル処理のためのシステムおよび方法
US10058284B2 (en) 2012-12-21 2018-08-28 Volcano Corporation Simultaneous imaging, monitoring, and therapy
EP2934280B1 (en) 2012-12-21 2022-10-19 Mai, Jerome Ultrasound imaging with variable line density
WO2014100530A1 (en) 2012-12-21 2014-06-26 Whiseant Chester System and method for catheter steering and operation
EP2934323A4 (en) 2012-12-21 2016-08-17 Andrew Hancock SYSTEM AND METHOD FOR MULTI-PASS PROCESSING OF IMAGE SIGNALS
US9226711B2 (en) 2012-12-21 2016-01-05 Volcano Corporation Laser direct structured catheter connection for intravascular device
EP2936626A4 (en) 2012-12-21 2016-08-17 David Welford SYSTEMS AND METHODS FOR REDUCING LIGHT WAVE LENGTH TRANSMISSION
WO2014100606A1 (en) 2012-12-21 2014-06-26 Meyer, Douglas Rotational ultrasound imaging catheter with extended catheter body telescope
EP2965263B1 (en) 2013-03-07 2022-07-20 Bernhard Sturm Multimodal segmentation in intravascular images
US10226597B2 (en) 2013-03-07 2019-03-12 Volcano Corporation Guidewire with centering mechanism
US11154313B2 (en) 2013-03-12 2021-10-26 The Volcano Corporation Vibrating guidewire torquer and methods of use
CN105228518B (zh) 2013-03-12 2018-10-09 火山公司 用于诊断冠状微脉管疾病的系统和方法
US11026591B2 (en) 2013-03-13 2021-06-08 Philips Image Guided Therapy Corporation Intravascular pressure sensor calibration
US9301687B2 (en) 2013-03-13 2016-04-05 Volcano Corporation System and method for OCT depth calibration
CN105120759B (zh) 2013-03-13 2018-02-23 火山公司 用于从旋转血管内超声设备产生图像的系统和方法
US10292677B2 (en) 2013-03-14 2019-05-21 Volcano Corporation Endoluminal filter having enhanced echogenic properties
US10219887B2 (en) 2013-03-14 2019-03-05 Volcano Corporation Filters with echogenic characteristics
EP2967606B1 (en) 2013-03-14 2018-05-16 Volcano Corporation Filters with echogenic characteristics
EP3042980A4 (en) 2013-09-05 2017-04-26 Mitsubishi Engineering-Plastics Corporation Thermoplastic resin composition, resin molded article, and method for producing plating-layer-equipped resin molded article
JP6564704B2 (ja) 2013-11-18 2019-08-21 三菱エンジニアリングプラスチックス株式会社 樹脂成形品の製造方法
KR101581041B1 (ko) 2013-12-28 2015-12-29 전자부품연구원 레이저에 의해 선택적 전도체 패턴 형성이 되는 3d 프린팅용 복합재료, 이를 이용한 전도체 패턴을 포함하는 3차원 형상 전자부품의 제조방법 및 그 전자부품
US9398703B2 (en) 2014-05-19 2016-07-19 Sierra Circuits, Inc. Via in a printed circuit board
WO2016003588A1 (en) 2014-07-01 2016-01-07 Ticona Llc Laser activatable polymer composition
KR101584246B1 (ko) 2014-10-17 2016-01-11 에스케이씨 주식회사 도전성 패턴 구조물 및 이의 제조방법
KR101722744B1 (ko) 2014-10-23 2017-04-03 주식회사 엘지화학 전자기파 조사에 의한 도전성 패턴 형성용 조성물, 이를 사용한 도전성 패턴 형성 방법과, 도전성 패턴을 갖는 수지 구조체
JP6200934B2 (ja) 2014-12-08 2017-09-20 財團法人工業技術研究院Ｉｎｄｕｓｔｒｉａｌ Ｔｅｃｈｎｏｌｏｇｙ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ ビームアンテナ
CN105813371B (zh) * 2014-12-31 2019-12-10 比亚迪股份有限公司 一种电路板及其制备方法和应用及一种微型投影光机模组
KR101762331B1 (ko) 2015-06-10 2017-07-27 에스케이씨 주식회사 도전성 패턴 구조물 및 이의 제조방법
US20170075473A1 (en) 2015-09-15 2017-03-16 Hyundai Motor Company Touch input device and method for manufacturing the same
US10203799B2 (en) 2015-09-15 2019-02-12 Hyundai Motor Company Touch input device, vehicle comprising touch input device, and manufacturing method of touch input device
KR101741654B1 (ko) 2015-11-19 2017-05-30 현대자동차주식회사 터치 입력장치, 이를 포함하는 차량, 및 그 제조방법
KR20170058742A (ko) 2015-11-19 2017-05-29 현대자동차주식회사 터치 입력장치, 이를 포함하는 차량, 및 그 제조방법
KR101728329B1 (ko) 2015-11-19 2017-05-02 현대자동차주식회사 터치 입력장치, 이를 포함하는 차량, 및 그 제조방법
EP3387887A1 (de) 2015-12-11 2018-10-17 Continental Automotive GmbH Verfahren zum abdichten und/oder elektrischen verbinden von komponenten für ein kraftfahrzeug und vorrichtung für ein kraftfahrzeug
DE102016202589A1 (de) 2016-02-19 2017-08-24 Continental Automotive Gmbh Verfahren zum elektrischen Verbinden von Komponenten für ein Kraftfahrzeug und Vorrichtung für ein Kraftfahrzeug
US9706650B1 (en) 2016-08-18 2017-07-11 Sierra Circuits, Inc. Catalytic laminate apparatus and method
US10849233B2 (en) 2017-07-10 2020-11-24 Catlam, Llc Process for forming traces on a catalytic laminate
KR101851146B1 (ko) 2016-09-21 2018-04-24 현대자동차주식회사 자동차용 카메라
KR101866736B1 (ko) 2016-09-23 2018-06-15 현대자동차주식회사 터치 입력장치 및 그 제조방법
KR101817526B1 (ko) 2016-09-26 2018-01-11 현대자동차주식회사 다이얼 조작장치 및 이를 갖는 차량
US9922951B1 (en) 2016-11-12 2018-03-20 Sierra Circuits, Inc. Integrated circuit wafer integration with catalytic laminate or adhesive
US10349520B2 (en) 2017-06-28 2019-07-09 Catlam, Llc Multi-layer circuit board using interposer layer and conductive paste
US10765012B2 (en) 2017-07-10 2020-09-01 Catlam, Llc Process for printed circuit boards using backing foil
EP3760762A4 (en) 2018-02-27 2021-11-10 Mitsubishi Engineering-Plastics Corporation THERMOPLASTIC RESIN COMPOSITION, MOLDED ARTICLE, PROCESS FOR PRODUCING A THERMOPLASTIC RESIN COMPOSITION, AND PROCESS FOR PRODUCING A PLATED MOLDED ARTICLE
US10827624B2 (en) 2018-03-05 2020-11-03 Catlam, Llc Catalytic laminate with conductive traces formed during lamination
EP3554096B9 (en) 2018-04-11 2023-07-05 GN Hearing A/S A hearing aid housing with an integrated antenna
CN114599737B (zh) 2019-11-06 2024-02-20 三菱化学株式会社 激光直接成型用树脂组合物、成型品和带镀层的成型品的制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1615961A1 (de) * 1967-04-12 1970-06-25 Degussa Verfahren zur Herstellung von gedruckten Schaltungen
CH621999A5 (zh) * 1976-06-24 1981-03-13 Ciba Geigy Ag
DE2748406A1 (de) * 1977-10-28 1979-05-03 Bayer Ag Verfahren zum herstellen von klebrige stoffe abweisenden ueberzuegen
US4169082A (en) * 1978-03-31 1979-09-25 Johns-Manville Corporation Flame resistant low-smoke hot melt adhesive
DK153337C (da) * 1979-04-11 1988-11-14 Platonec Aps Fremgangsmaade til toer sensibilisering af en isolerende overflade
JPS60119733A (ja) * 1983-12-01 1985-06-27 Fuji Electric Corp Res & Dev Ltd シリコン板の重金属ゲッタリング方法
JPS61141774A (ja) * 1984-12-13 1986-06-28 Sumitomo Bakelite Co Ltd アディティブめつき用接着剤
DE3504628A1 (de) * 1985-02-11 1986-08-14 Henkel KGaA, 4000 Düsseldorf Verfahren zur herstellung eines rieselfaehigen granulats
EP0214097B1 (de) * 1985-08-23 1989-12-27 Ciba-Geigy Ag Mischung aus Olefin und Dibenzalaceton-Palladiumkomplex und deren Verwendung
US4668330A (en) * 1985-12-05 1987-05-26 Monsanto Company Furnace contamination
US4853252A (en) * 1986-12-17 1989-08-01 Siemens Aktiengesellschaft Method and coating material for applying electrically conductive printed patterns to insulating substrates
US5405656A (en) * 1990-04-02 1995-04-11 Nippondenso Co., Ltd. Solution for catalytic treatment, method of applying catalyst to substrate and method of forming electrical conductor
DE4042220C2 (de) * 1990-12-29 1995-02-02 Heraeus Noblelight Gmbh Verfahren zur Herstellung von ganzflächigen oder partiellen Goldschichten
JPH0537129A (ja) * 1991-07-31 1993-02-12 Hitachi Aic Inc プリント配線板の製造方法
DE4319759A1 (de) * 1993-06-15 1994-12-22 Bayer Ag Pulvermischungen zum Metallisieren von Substratoberflächen
EP0727925A1 (de) * 1995-02-14 1996-08-21 Lpkf Cad/Cam Systeme Gmbh Verfahren zur strukturierten Metallisierung der Oberfläche von Substraten
DE19723734C2 (de) * 1997-06-06 2002-02-07 Gerhard Naundorf Leiterbahnstrukturen auf einem nichtleitenden Trägermaterial und Verfahren zu ihrer Herstellung

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1326435C (zh) * 2001-07-05 2007-07-11 Lpkf激光和电子股份公司 导体轨道结构的制造方法
CN102308375A (zh) * 2008-09-18 2012-01-04 视声公司 用于制造超声换能器和其他部件的方法
CN102308375B (zh) * 2008-09-18 2015-01-28 视声公司 用于制造超声换能器和其他部件的方法
US9935254B2 (en) 2008-09-18 2018-04-03 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
US10596597B2 (en) 2008-09-18 2020-03-24 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
US11094875B2 (en) 2008-09-18 2021-08-17 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
US11845108B2 (en) 2008-09-18 2023-12-19 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
CN103328684A (zh) * 2010-11-23 2013-09-25 新型材料莱布尼兹研究所公益性有限责任公司 用于制备金属结构的方法
CN107577379A (zh) * 2016-07-04 2018-01-12 现代自动车株式会社 触控装置和用于控制触控装置的方法
CN107577379B (zh) * 2016-07-04 2022-03-11 现代自动车株式会社 触控装置和用于控制触控装置的方法

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DE19731346A1 (de) 1999-03-04
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