CN1219772A - 半导体图象传感器的结构及其制造方法 - Google Patents
半导体图象传感器的结构及其制造方法 Download PDFInfo
- Publication number
- CN1219772A CN1219772A CN98123996A CN98123996A CN1219772A CN 1219772 A CN1219772 A CN 1219772A CN 98123996 A CN98123996 A CN 98123996A CN 98123996 A CN98123996 A CN 98123996A CN 1219772 A CN1219772 A CN 1219772A
- Authority
- CN
- China
- Prior art keywords
- district
- conduction type
- substrate
- mos transistor
- degree
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 abstract description 4
- 239000007943 implant Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
一种图象传感器(10),具有图象敏感元件,该元件包括N型导电区(26)和P型嵌入层(37)。这两个区构成两个深度不同的P-N结,提高了不同光频下电荷载流子收集的效率。导电区(26)是通过有角度的注入形成的,这样可以保证导电区(26)的一部分可以用作MOS晶体管(32)的源。
Description
本发明一般涉及半导体器件,特别涉及一种半导体图象传感器。
过去,采用了各种方法在具有互补金属氧化物半导体(CMOS)器件的衬底上形成半导体传感器。一般情况下,传感器的光接收部分形成为大面积晶体管的栅,常称之为光栅,或形成为金属氧化物半导体(MOS)晶体管的源-漏结。采用光栅晶体管时,需要光扫过晶体管的硅栅,以将光转化为电能。因此,采用光栅的情况减小了灵敏度。另外,耗尽区一般较浅(小于一个微米),所以减小了吸收红光诱发的载流子的收集效率。并且常规光栅对表面复合产生的噪声敏感。
采用源-漏结的情况一般有一个对于晶体管操作最佳的结,并且还有一个会造成红光诱发的载流子无效收集的浅结。采用源-漏结情况的另一缺点是结一般形成于重掺杂(大于1016原子/cm3)区中,限制了结耗尽区的宽度,进而减小了吸收红光诱发的载流子的收集效率。另外,在这种重掺杂区中形成结会产生很大的电容,进而会减少可以从光敏元件传递到其它电子元件的电荷量。
因此,希望形成一种图象传感器,不用光栅可具有较高效率,没有浅结深度可提高效率,可使表面复合噪声最小。
唯一的附图展示根据本发明图象传感器实施例的放大剖面图;
图1是有源象素传感器或半导体图象传感器10的放大剖面图。传感器10包括底层P型衬底11。传感器10具有形成于底层衬底11的第一区13中的第一阱或P阱16。阱16的掺杂浓度一般高于底层衬底11的第二区14的掺杂浓度。区13和14由括弧标识出。第二区14构成衬底11内的第二阱。阱16的表面掺杂浓度一般至少为1×1016原子/cm3。阱16的第一深度或深度24一般约为2-4微米,以便于在衬底11上形成其它CMOS器件。
传感器10的图象获取元件或光敏元件包括形成于第二阱或第二区14中的N型导电区26。导电区26与衬底11的P型材料一起构成第一P-N结。这第一P-N结处于导电区26的第二深度或深度29,以便于容易地感应红光,该深度一般是从衬底11表面算起小于约0.7微米,最好是约小于0.5微米。P型嵌入层37形成于区26内,并从区26向外延伸到衬底11中,以与其电连接。该电连接将加于图象传感器的该元件的电位保持住。因此,所得的光电二极管常被称为嵌入光电二极管。第二P-N结沿层37和区26的交界区形成。一般层37与其它P沟道MOS晶体管(未示出)的轻掺杂漏和源区同时形成于衬底11上。第二P-N结的深度小于第一P-N结的深度。该深度选择成使对蓝光的收集或感应最佳。传递晶体管或第一MOS晶体32邻近导电区26形成,以便区26的一部分构成晶体管32的源。第二或复位MOS晶体管31形成于阱16内。耦合区41使晶体管31的源电耦合到晶体管32。
通过有一开口而露出区14某部分表面的掩模形成延伸到并包括晶体管32一部分栅22的导电区26。然后,以偏离衬底11法线向着栅22的角度注入掺杂剂,以确保区26在栅22下延伸,由此省去形成区26和晶体管32的源时的掩蔽和其它工艺。
现在,应理解,这里提供了一种新颖的图像传感器及其制造方法。形成深导电区和较浅嵌入层,构成了两个P-N结,其中一个P-N结及有关的耗尽区较深,以便于获取红光,第二P-N结及有关的耗尽区较浅,以便于获取蓝光。这种结构还使表面复合作用最大限度地减小,并使电荷最大限度地传递。利用有角度的注入形成导电区,可以保证导电区可用作电荷传递晶体管的源,由此使制造操作步骤最大限度地减少。
Claims (10)
1.一种图象传感器,其特征在于:
具有第一掺杂浓度的第一导电类型的衬底(11);
衬底上的第一阱(16),第一阱具有第一导电类型和大于第一掺杂浓度的第二掺杂浓度,其中第一阱具有深入到衬底的第一深度(24);
与第一阱(16)隔开横向的衬底上的第一MOS晶体管(32);
与第一MOS晶体管邻接的位于衬底内的第二导电类型的导电区(26),其中一部分导电区形成第一MOS晶体管的漏,并且导电区(26)具有深入到衬底的第二深度(29);
第一导电类型的嵌入层(37),具有形成于导电区(26)内部的第一部分和以远离第一MOS晶体管(32)的方向从导电区横向延伸的第二部分。
2.如权利要求1所述的图象传感器,其特征在于:第二深度(29)大于嵌入层的深度,从而在第一深度处形成第一P-N结,在嵌入层和导电区的交界区附近形成第二P-N结。
3.如权利要求2所述的图象传感器,其特征在于:第二深度(29)近似小于7微米。
4.有源象素传感器的形成方法,其特征在于包括以下步骤:
提供具有第一导电类型的表面和第一导电类型的第一区(16)的衬底(11);
在第一导电类型的第二区(14)中提供嵌入式光电二极管,使得第二区的第二掺杂浓度小于第一区(16)的第一掺杂浓度,嵌入式光电二极管具有离表面第一深度(29)处的第一P-N结和小于第一深度的第二深度处的第二P-N结;以及
在第二区中至少形成一个MOS晶体管(32)。
5.如权利要求4所述的方法,其特征在于:提供嵌入式光电二极管的步骤还包括以偏离衬底法线的一个角度注入与第一导电类型相反的第二导电类型的掺杂剂,以在MOS晶体管的栅下延伸。
6.有源象素传感器,其特征在于:
具有第一导电类型表面的衬底(11),所述衬底具有第一导电类型的较高浓度的第一区(16)和比第一区的浓度低的第一导电类型的第二区(14);
在第二区(14)中邻接第一区(16)形成的嵌入式光电二极管;以及
在第二区中邻接嵌入式光电二极管形成的至少一个MOS晶体管(32)。
7.如权利要求6所述的有源象素传感器,其特征在于:嵌入式光电二极管还包括以偏离衬底法线的一个角度注入的、与第一导电类型相反的第二导电类型(26)的掺杂剂,以使第二导电类型的掺杂剂在栅(22)下延伸到MOS晶体管(32)。
8.如权利要求7所述的有源象素传感器,其特征在于还包括在第二导电类型的区域(26)内形成的嵌入式光电二极管的嵌入层(37)。
9.如权利要求8所述的有源象素传感器,其特征在于:所注入的第二导电类型的掺杂剂(26)比嵌入层(37)在MOS晶体管的栅(22)的更下方延伸。
10如权利要求9所述的有源象素传感器,其特征在于还包括在第一区(16)内的电耦合于第一MOS晶体管(32)的第二MOS晶体管(31)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US970703 | 1997-11-14 | ||
US08/970,703 US6100556A (en) | 1997-11-14 | 1997-11-14 | Method of forming a semiconductor image sensor and structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1219772A true CN1219772A (zh) | 1999-06-16 |
CN1139994C CN1139994C (zh) | 2004-02-25 |
Family
ID=25517361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB98123996XA Expired - Lifetime CN1139994C (zh) | 1997-11-14 | 1998-11-11 | 半导体图象传感器的结构及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6100556A (zh) |
JP (1) | JPH11233748A (zh) |
KR (1) | KR100595907B1 (zh) |
CN (1) | CN1139994C (zh) |
TW (1) | TW434898B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102315231A (zh) * | 2010-07-09 | 2012-01-11 | 苏州东微半导体有限公司 | 一种半导体感光器件及其制造方法 |
CN101752445B (zh) * | 2008-11-28 | 2013-05-29 | 瀚宇彩晶股份有限公司 | 光传感器、感光二极管、二极管层及其制造方法 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6815791B1 (en) * | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
US7199410B2 (en) * | 1999-12-14 | 2007-04-03 | Cypress Semiconductor Corporation (Belgium) Bvba | Pixel structure with improved charge transfer |
US6023081A (en) * | 1997-11-14 | 2000-02-08 | Motorola, Inc. | Semiconductor image sensor |
US6489643B1 (en) | 1998-06-27 | 2002-12-03 | Hynix Semiconductor Inc. | Photodiode having a plurality of PN junctions and image sensor having the same |
FR2781929B1 (fr) * | 1998-07-28 | 2002-08-30 | St Microelectronics Sa | Capteur d'image a reseau de photodiodes |
US6448596B1 (en) * | 2000-08-15 | 2002-09-10 | Innotech Corporation | Solid-state imaging device |
US6507083B1 (en) | 2000-10-05 | 2003-01-14 | Pixim, Inc. | Image sensor with light-reflecting via structures |
US6566697B1 (en) | 2000-11-28 | 2003-05-20 | Dalsa, Inc. | Pinned photodiode five transistor pixel |
US6713796B1 (en) | 2001-01-19 | 2004-03-30 | Dalsa, Inc. | Isolated photodiode |
FR2820882B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodetecteur a trois transistors |
FR2820883B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodiode a grande capacite |
FR2824665B1 (fr) * | 2001-05-09 | 2004-07-23 | St Microelectronics Sa | Photodetecteur de type cmos |
US6545303B1 (en) * | 2001-11-06 | 2003-04-08 | Fillfactory | Method to increase conversion gain of an active pixel, and corresponding active pixel |
KR100446319B1 (ko) * | 2002-01-10 | 2004-09-01 | 주식회사 하이닉스반도체 | 이미지센서 및 그 제조 방법 |
JP2004014911A (ja) * | 2002-06-10 | 2004-01-15 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4758061B2 (ja) * | 2003-10-16 | 2011-08-24 | パナソニック株式会社 | 固体撮像装置およびその製造方法 |
KR100606910B1 (ko) * | 2004-12-29 | 2006-08-01 | 동부일렉트로닉스 주식회사 | Cmos 이미지 센서 및 그의 제조 방법 |
JP4224036B2 (ja) | 2005-03-17 | 2009-02-12 | 富士通マイクロエレクトロニクス株式会社 | フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法 |
US7808022B1 (en) | 2005-03-28 | 2010-10-05 | Cypress Semiconductor Corporation | Cross talk reduction |
US7750958B1 (en) | 2005-03-28 | 2010-07-06 | Cypress Semiconductor Corporation | Pixel structure |
US7575977B2 (en) * | 2007-03-26 | 2009-08-18 | Tower Semiconductor Ltd. | Self-aligned LDMOS fabrication method integrated deep-sub-micron VLSI process, using a self-aligned lithography etches and implant process |
US7749874B2 (en) * | 2007-03-26 | 2010-07-06 | Tower Semiconductor Ltd. | Deep implant self-aligned to polysilicon gate |
US8476567B2 (en) | 2008-09-22 | 2013-07-02 | Semiconductor Components Industries, Llc | Active pixel with precharging circuit |
US9330979B2 (en) * | 2008-10-29 | 2016-05-03 | Tower Semiconductor Ltd. | LDMOS transistor having elevated field oxide bumps and method of making same |
US9484454B2 (en) | 2008-10-29 | 2016-11-01 | Tower Semiconductor Ltd. | Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure |
US9287319B2 (en) * | 2012-11-16 | 2016-03-15 | Sri International | CMOS multi-pinned (MP) pixel |
US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4484210A (en) * | 1980-09-05 | 1984-11-20 | Nippon Electric Co., Ltd. | Solid-state imaging device having a reduced image lag |
JPS6239055A (ja) * | 1985-08-13 | 1987-02-20 | Mitsubishi Electric Corp | 固体撮像素子 |
JPH04355964A (ja) * | 1990-12-21 | 1992-12-09 | Mitsubishi Electric Corp | 固体撮像装置及びその製造方法 |
JP3097186B2 (ja) * | 1991-06-04 | 2000-10-10 | ソニー株式会社 | 固体撮像装置 |
JPH05251684A (ja) * | 1991-11-25 | 1993-09-28 | Eastman Kodak Co | ブルーミング防止特性を向上させたccd画像センサ |
JPH06296004A (ja) * | 1993-04-07 | 1994-10-21 | Hitachi Ltd | 固体撮像素子 |
JP2621767B2 (ja) * | 1993-07-30 | 1997-06-18 | 日本電気株式会社 | 固体撮像素子 |
JP3467858B2 (ja) * | 1993-11-02 | 2003-11-17 | ソニー株式会社 | 光電変換素子 |
JPH07161958A (ja) * | 1993-12-09 | 1995-06-23 | Nec Corp | 固体撮像装置 |
KR970011376B1 (ko) * | 1993-12-13 | 1997-07-10 | 금성일렉트론 주식회사 | 씨씨디(ccd)형 고체촬상소자 |
JP3384509B2 (ja) * | 1994-07-05 | 2003-03-10 | ソニー株式会社 | 固体撮像素子 |
KR0136924B1 (ko) * | 1994-07-06 | 1998-04-24 | 문정환 | 씨씨디(ccd) 영상소자의 제조방법 |
US5625210A (en) * | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
JP2848268B2 (ja) * | 1995-04-20 | 1999-01-20 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
-
1997
- 1997-11-14 US US08/970,703 patent/US6100556A/en not_active Expired - Lifetime
-
1998
- 1998-10-21 TW TW087117400A patent/TW434898B/zh not_active IP Right Cessation
- 1998-11-11 CN CNB98123996XA patent/CN1139994C/zh not_active Expired - Lifetime
- 1998-11-13 JP JP10322992A patent/JPH11233748A/ja active Pending
- 1998-11-14 KR KR1019980048840A patent/KR100595907B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101752445B (zh) * | 2008-11-28 | 2013-05-29 | 瀚宇彩晶股份有限公司 | 光传感器、感光二极管、二极管层及其制造方法 |
CN102315231A (zh) * | 2010-07-09 | 2012-01-11 | 苏州东微半导体有限公司 | 一种半导体感光器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6100556A (en) | 2000-08-08 |
CN1139994C (zh) | 2004-02-25 |
JPH11233748A (ja) | 1999-08-27 |
KR100595907B1 (ko) | 2006-09-07 |
TW434898B (en) | 2001-05-16 |
KR19990045289A (ko) | 1999-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1139994C (zh) | 半导体图象传感器的结构及其制造方法 | |
CN1146036C (zh) | 半导体图象传感器及其制造方法 | |
US6127697A (en) | CMOS image sensor | |
US6329679B1 (en) | Photodiode with increased photocollection area for image sensor | |
US7253019B2 (en) | Buried, fully depletable, high fill factor photodiodes | |
JP3125303B2 (ja) | 固体撮像素子 | |
EP1178534A3 (en) | MOS type solid-state imager and manufacturing method thereof | |
JP4406964B2 (ja) | 固体撮像素子及びその製造方法 | |
CN103904092B (zh) | 一种硅基cmos图像传感器提高电子转移效率的方法 | |
KR100255411B1 (ko) | 폴리 콘택과 셀의 베이스 영역으로의 증가된 용량성 결합을갖는 바이폴라계 능동화소센서셀 | |
KR101373866B1 (ko) | 이미지 센서 및 그의 제조 방법 | |
JP4053651B2 (ja) | 電磁放射検出器、該検出器を用いた高感度ピクセル構造、及び該検出器の製造方法 | |
CN100468760C (zh) | Cmos影像感测组件 | |
TWI694617B (zh) | 像素結構 | |
CN101304036B (zh) | 图像传感器及其形成方法 | |
KR100660345B1 (ko) | 씨모스 이미지 센서 및 그의 제조방법 | |
JP5145528B2 (ja) | 二重目的電極を備えるシールドされたcmos画素構造 | |
JP2001223351A5 (zh) | ||
KR100204914B1 (ko) | 고체촬상소자의 신호검출장치 | |
JP2004273913A (ja) | 固体撮像装置およびその製造方法 | |
KR20070071018A (ko) | 이미지 센서 및 그 제조방법 | |
JPH10150180A (ja) | 固体撮像装置 | |
KR101625452B1 (ko) | 이미지 센서 및 그 제조 방법 | |
KR100223931B1 (ko) | 고체 촬상 소자 및 그 제조방법 | |
JPH01233771A (ja) | 電荷転送素子とその駆動方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1019818 Country of ref document: HK |
|
CX01 | Expiry of patent term |
Granted publication date: 20040225 |
|
CX01 | Expiry of patent term |