CN1218395C - 改进的集成振荡器和调谐电路 - Google Patents

改进的集成振荡器和调谐电路 Download PDF

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Publication number
CN1218395C
CN1218395C CN00805280.8A CN00805280A CN1218395C CN 1218395 C CN1218395 C CN 1218395C CN 00805280 A CN00805280 A CN 00805280A CN 1218395 C CN1218395 C CN 1218395C
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CN
China
Prior art keywords
integrated circuit
capacitor
oscillator
circuit
varactor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN00805280.8A
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English (en)
Chinese (zh)
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CN1344426A (zh
Inventor
P·T·M·范泽尔
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Telefonaktiebolaget LM Ericsson AB
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Telefonaktiebolaget LM Ericsson AB
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Publication of CN1344426A publication Critical patent/CN1344426A/zh
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Publication of CN1218395C publication Critical patent/CN1218395C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/215—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN00805280.8A 1999-03-19 2000-03-13 改进的集成振荡器和调谐电路 Expired - Lifetime CN1218395C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12524599P 1999-03-19 1999-03-19
US60/125,245 1999-03-19
US09/434,166 1999-11-04
US09/434,166 US6268779B1 (en) 1999-03-19 1999-11-04 Integrated oscillators and tuning circuits

Publications (2)

Publication Number Publication Date
CN1344426A CN1344426A (zh) 2002-04-10
CN1218395C true CN1218395C (zh) 2005-09-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN00805280.8A Expired - Lifetime CN1218395C (zh) 1999-03-19 2000-03-13 改进的集成振荡器和调谐电路

Country Status (8)

Country Link
US (1) US6268779B1 (https=)
EP (1) EP1183730A2 (https=)
JP (1) JP4509390B2 (https=)
CN (1) CN1218395C (https=)
AU (1) AU3991200A (https=)
MY (1) MY122686A (https=)
TR (1) TR200102696T2 (https=)
WO (1) WO2000057454A2 (https=)

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CN101488735B (zh) * 2008-01-17 2012-02-08 瑞昱半导体股份有限公司 高分辨率数字控制调谐元件、调谐电路以及调谐方法

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US6747307B1 (en) * 2000-04-04 2004-06-08 Koninklijke Philips Electronics N.V. Combined transistor-capacitor structure in deep sub-micron CMOS for power amplifiers
US6504443B1 (en) * 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
US7214593B2 (en) * 2001-02-01 2007-05-08 International Business Machines Corporation Passivation for improved bipolar yield
JP5000055B2 (ja) * 2001-09-19 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置
US6541814B1 (en) 2001-11-06 2003-04-01 Pericom Semiconductor Corp. MOS variable capacitor with controlled dC/dV and voltage drop across W of gate
US7126206B2 (en) * 2004-12-30 2006-10-24 Silicon Labs Cp, Inc. Distributed capacitor array
US7323948B2 (en) * 2005-08-23 2008-01-29 International Business Machines Corporation Vertical LC tank device
JP5180091B2 (ja) * 2005-11-24 2013-04-10 テクニシェ・ウニフェルシテイト・デルフト バラクタ素子および低歪バラクタ回路装置
US7511346B2 (en) * 2005-12-27 2009-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Design of high-frequency substrate noise isolation in BiCMOS technology
US7518850B2 (en) 2006-05-18 2009-04-14 International Business Machines Corporation High yield, high density on-chip capacitor design
US8809155B2 (en) 2012-10-04 2014-08-19 International Business Machines Corporation Back-end-of-line metal-oxide-semiconductor varactors
KR102345675B1 (ko) * 2015-07-13 2021-12-31 에스케이하이닉스 주식회사 스위치드-커패시터 디시-디시 컨버터 및 그 제조방법

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US4855801A (en) * 1986-08-22 1989-08-08 Siemens Aktiengesellschaft Transistor varactor for dynamics semiconductor storage means
US4703286A (en) 1986-11-26 1987-10-27 Rca Corporation Dual gate tunable oscillator
JPH01293673A (ja) * 1988-05-23 1989-11-27 Iwasaki Electric Co Ltd 発光ダイオード
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JPH05218304A (ja) * 1991-11-04 1993-08-27 Motorola Inc 集積化分布型抵抗−容量および誘導−容量ネットワーク
US5564100A (en) 1992-06-03 1996-10-08 Motorola, Inc. Frequency modulator having a modulation varactor coupled to output of a VCO
US5292677A (en) * 1992-09-18 1994-03-08 Micron Technology, Inc. Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts
US5302920A (en) * 1992-10-13 1994-04-12 Ncr Corporation Controllable multi-phase ring oscillators with variable current sources and capacitances
JPH06310953A (ja) * 1993-04-20 1994-11-04 Sanyo Electric Co Ltd 整合回路
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JPH0982892A (ja) * 1995-09-13 1997-03-28 Toshiba Corp 半導体集積回路およびその製造方法
US5883422A (en) * 1996-06-28 1999-03-16 The Whitaker Corporation Reduced parasitic capacitance semiconductor devices
JPH10150321A (ja) 1996-11-18 1998-06-02 Murata Mfg Co Ltd 電圧制御発振器
US5821827A (en) 1996-12-18 1998-10-13 Endgate Corporation Coplanar oscillator circuit structures
US5838207A (en) 1996-12-20 1998-11-17 Ericsson Inc. Voltage controlled oscillator with partial load-pull tuning
US5856763A (en) 1997-03-05 1999-01-05 Motorola Inc. Dual frequency voltage controlled oscillator
JPH1141030A (ja) * 1997-07-15 1999-02-12 Hitachi Denshi Ltd 電圧制御発振器
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101488735B (zh) * 2008-01-17 2012-02-08 瑞昱半导体股份有限公司 高分辨率数字控制调谐元件、调谐电路以及调谐方法

Also Published As

Publication number Publication date
WO2000057454A2 (en) 2000-09-28
MY122686A (en) 2006-04-29
AU3991200A (en) 2000-10-09
EP1183730A2 (en) 2002-03-06
JP2002540597A (ja) 2002-11-26
US6268779B1 (en) 2001-07-31
TR200102696T2 (tr) 2002-04-22
JP4509390B2 (ja) 2010-07-21
WO2000057454A3 (en) 2001-01-18
CN1344426A (zh) 2002-04-10

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Granted publication date: 20050907