CN121488073A - Iii族氮化物半导体外延晶片及器件 - Google Patents

Iii族氮化物半导体外延晶片及器件

Info

Publication number
CN121488073A
CN121488073A CN202480046395.0A CN202480046395A CN121488073A CN 121488073 A CN121488073 A CN 121488073A CN 202480046395 A CN202480046395 A CN 202480046395A CN 121488073 A CN121488073 A CN 121488073A
Authority
CN
China
Prior art keywords
iii nitride
nitride semiconductor
group iii
semiconductor substrate
epitaxial wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480046395.0A
Other languages
English (en)
Chinese (zh)
Inventor
隅智亮
森勇介
吉村政志
今西正幸
宇佐美茂佳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Panasonic Holdings Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Holdings Corp filed Critical Panasonic Holdings Corp
Publication of CN121488073A publication Critical patent/CN121488073A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202480046395.0A 2023-07-28 2024-02-19 Iii族氮化物半导体外延晶片及器件 Pending CN121488073A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023123380 2023-07-28
JP2023-123380 2023-07-28
PCT/JP2024/005738 WO2025027894A1 (ja) 2023-07-28 2024-02-19 Ｉｉｉ族窒化物半導体エピタキシャルウエハ及びデバイス

Publications (1)

Publication Number Publication Date
CN121488073A true CN121488073A (zh) 2026-02-06

Family

ID=94394994

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480046395.0A Pending CN121488073A (zh) 2023-07-28 2024-02-19 Iii族氮化物半导体外延晶片及器件

Country Status (3)

Country Link
JP (1) JPWO2025027894A1 (https=)
CN (1) CN121488073A (https=)
WO (1) WO2025027894A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6168091B2 (ja) * 2010-08-31 2017-07-26 株式会社リコー Ｉｉｉ族窒化物結晶およびｉｉｉ族窒化物の結晶基板
JP6785455B2 (ja) * 2018-05-11 2020-11-18 パナソニックＩｐマネジメント株式会社 発光ダイオード素子、及び発光ダイオード素子の製造方法
JP7117732B2 (ja) * 2018-07-11 2022-08-15 国立大学法人大阪大学 Ｉｉｉ族窒化物基板およびｉｉｉ族窒化物結晶の製造方法
JP7166998B2 (ja) * 2019-09-20 2022-11-08 株式会社サイオクス 窒化物半導体基板

Also Published As

Publication number Publication date
JPWO2025027894A1 (https=) 2025-02-06
WO2025027894A1 (ja) 2025-02-06

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