JPWO2025027894A1 - - Google Patents
Info
- Publication number
- JPWO2025027894A1 JPWO2025027894A1 JP2025538187A JP2025538187A JPWO2025027894A1 JP WO2025027894 A1 JPWO2025027894 A1 JP WO2025027894A1 JP 2025538187 A JP2025538187 A JP 2025538187A JP 2025538187 A JP2025538187 A JP 2025538187A JP WO2025027894 A1 JPWO2025027894 A1 JP WO2025027894A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023123380 | 2023-07-28 | ||
| PCT/JP2024/005738 WO2025027894A1 (ja) | 2023-07-28 | 2024-02-19 | Ｉｉｉ族窒化物半導体エピタキシャルウエハ及びデバイス |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025027894A1 true JPWO2025027894A1 (https=) | 2025-02-06 |
Family
ID=94394994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025538187A Pending JPWO2025027894A1 (https=) | 2023-07-28 | 2024-02-19 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2025027894A1 (https=) |
| CN (1) | CN121488073A (https=) |
| WO (1) | WO2025027894A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6168091B2 (ja) * | 2010-08-31 | 2017-07-26 | 株式会社リコー | Ｉｉｉ族窒化物結晶およびｉｉｉ族窒化物の結晶基板 |
| JP6785455B2 (ja) * | 2018-05-11 | 2020-11-18 | パナソニックＩｐマネジメント株式会社 | 発光ダイオード素子、及び発光ダイオード素子の製造方法 |
| JP7117732B2 (ja) * | 2018-07-11 | 2022-08-15 | 国立大学法人大阪大学 | Ｉｉｉ族窒化物基板およびｉｉｉ族窒化物結晶の製造方法 |
| JP7166998B2 (ja) * | 2019-09-20 | 2022-11-08 | 株式会社サイオクス | 窒化物半導体基板 |
-
2024
- 2024-02-19 JP JP2025538187A patent/JPWO2025027894A1/ja active Pending
- 2024-02-19 WO PCT/JP2024/005738 patent/WO2025027894A1/ja active Pending
- 2024-02-19 CN CN202480046395.0A patent/CN121488073A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN121488073A (zh) | 2026-02-06 |
| WO2025027894A1 (ja) | 2025-02-06 |