CN121312312A - 等离子体蚀刻装置和等离子体蚀刻方法 - Google Patents

等离子体蚀刻装置和等离子体蚀刻方法

Info

Publication number
CN121312312A
CN121312312A CN202480036574.6A CN202480036574A CN121312312A CN 121312312 A CN121312312 A CN 121312312A CN 202480036574 A CN202480036574 A CN 202480036574A CN 121312312 A CN121312312 A CN 121312312A
Authority
CN
China
Prior art keywords
gas
chamber
flow rate
diffusion chamber
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480036574.6A
Other languages
English (en)
Chinese (zh)
Inventor
网仓纪彦
中村谕
石川学
石井健太郎
清水勇佑
泽地淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN121312312A publication Critical patent/CN121312312A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN202480036574.6A 2023-10-24 2024-10-15 等离子体蚀刻装置和等离子体蚀刻方法 Pending CN121312312A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-182263 2023-10-24
JP2023182263 2023-10-24
PCT/JP2024/036692 WO2025089134A1 (ja) 2023-10-24 2024-10-15 プラズマエッチング装置及びプラズマエッチング方法

Publications (1)

Publication Number Publication Date
CN121312312A true CN121312312A (zh) 2026-01-09

Family

ID=95515430

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480036574.6A Pending CN121312312A (zh) 2023-10-24 2024-10-15 等离子体蚀刻装置和等离子体蚀刻方法

Country Status (5)

Country Link
US (1) US20260066237A1 (https=)
JP (1) JP7799906B2 (https=)
CN (1) CN121312312A (https=)
TW (1) TW202533285A (https=)
WO (1) WO2025089134A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4782585B2 (ja) * 2006-02-28 2011-09-28 株式会社日立ハイテクノロジーズ プラズマエッチング装置及び方法
JP4908045B2 (ja) 2006-04-17 2012-04-04 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP4928893B2 (ja) * 2006-10-03 2012-05-09 株式会社日立ハイテクノロジーズ プラズマエッチング方法。
JP5937385B2 (ja) * 2012-03-16 2016-06-22 東京エレクトロン株式会社 半導体製造装置のガス供給方法、ガス供給システム及び半導体製造装置
JP6763274B2 (ja) * 2016-10-14 2020-09-30 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP7450494B2 (ja) * 2020-08-18 2024-03-15 東京エレクトロン株式会社 基板処理装置および基板処理装置のガス切り替え方法

Also Published As

Publication number Publication date
US20260066237A1 (en) 2026-03-05
JP7799906B2 (ja) 2026-01-15
TW202533285A (zh) 2025-08-16
JPWO2025089134A1 (https=) 2025-05-01
WO2025089134A1 (ja) 2025-05-01

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