JPWO2025089134A1 - - Google Patents

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Publication number
JPWO2025089134A1
JPWO2025089134A1 JP2025539770A JP2025539770A JPWO2025089134A1 JP WO2025089134 A1 JPWO2025089134 A1 JP WO2025089134A1 JP 2025539770 A JP2025539770 A JP 2025539770A JP 2025539770 A JP2025539770 A JP 2025539770A JP WO2025089134 A1 JPWO2025089134 A1 JP WO2025089134A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2025539770A
Other languages
Japanese (ja)
Other versions
JPWO2025089134A5 (https=
JP7799906B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2025089134A1 publication Critical patent/JPWO2025089134A1/ja
Publication of JPWO2025089134A5 publication Critical patent/JPWO2025089134A5/ja
Application granted granted Critical
Publication of JP7799906B2 publication Critical patent/JP7799906B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2025539770A 2023-10-24 2024-10-15 プラズマエッチング装置及びプラズマエッチング方法 Active JP7799906B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023182263 2023-10-24
JP2023182263 2023-10-24
PCT/JP2024/036692 WO2025089134A1 (ja) 2023-10-24 2024-10-15 プラズマエッチング装置及びプラズマエッチング方法

Publications (3)

Publication Number Publication Date
JPWO2025089134A1 true JPWO2025089134A1 (https=) 2025-05-01
JPWO2025089134A5 JPWO2025089134A5 (https=) 2025-09-25
JP7799906B2 JP7799906B2 (ja) 2026-01-15

Family

ID=95515430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025539770A Active JP7799906B2 (ja) 2023-10-24 2024-10-15 プラズマエッチング装置及びプラズマエッチング方法

Country Status (5)

Country Link
US (1) US20260066237A1 (https=)
JP (1) JP7799906B2 (https=)
CN (1) CN121312312A (https=)
TW (1) TW202533285A (https=)
WO (1) WO2025089134A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234762A (ja) * 2006-02-28 2007-09-13 Hitachi High-Technologies Corp プラズマエッチング装置及び方法
JP2007287924A (ja) * 2006-04-17 2007-11-01 Hitachi High-Technologies Corp プラズマ処理方法およびプラズマ処理装置
JP2008091651A (ja) * 2006-10-03 2008-04-17 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法
JP2013197183A (ja) * 2012-03-16 2013-09-30 Tokyo Electron Ltd 半導体製造装置のガス供給方法、ガス供給システム及び半導体製造装置
JP2018064058A (ja) * 2016-10-14 2018-04-19 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP2022034327A (ja) * 2020-08-18 2022-03-03 東京エレクトロン株式会社 基板処理装置および基板処理装置のガス切り替え方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234762A (ja) * 2006-02-28 2007-09-13 Hitachi High-Technologies Corp プラズマエッチング装置及び方法
JP2007287924A (ja) * 2006-04-17 2007-11-01 Hitachi High-Technologies Corp プラズマ処理方法およびプラズマ処理装置
JP2008091651A (ja) * 2006-10-03 2008-04-17 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法
JP2013197183A (ja) * 2012-03-16 2013-09-30 Tokyo Electron Ltd 半導体製造装置のガス供給方法、ガス供給システム及び半導体製造装置
JP2018064058A (ja) * 2016-10-14 2018-04-19 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP2022034327A (ja) * 2020-08-18 2022-03-03 東京エレクトロン株式会社 基板処理装置および基板処理装置のガス切り替え方法

Also Published As

Publication number Publication date
US20260066237A1 (en) 2026-03-05
JP7799906B2 (ja) 2026-01-15
CN121312312A (zh) 2026-01-09
TW202533285A (zh) 2025-08-16
WO2025089134A1 (ja) 2025-05-01

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