JP7799906B2 - プラズマエッチング装置及びプラズマエッチング方法 - Google Patents

プラズマエッチング装置及びプラズマエッチング方法

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Publication number
JP7799906B2
JP7799906B2 JP2025539770A JP2025539770A JP7799906B2 JP 7799906 B2 JP7799906 B2 JP 7799906B2 JP 2025539770 A JP2025539770 A JP 2025539770A JP 2025539770 A JP2025539770 A JP 2025539770A JP 7799906 B2 JP7799906 B2 JP 7799906B2
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Japan
Prior art keywords
gas
chamber
flow rate
diffusion chamber
exhaust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2025539770A
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English (en)
Japanese (ja)
Other versions
JPWO2025089134A5 (https=
JPWO2025089134A1 (https=
Inventor
紀彦 網倉
諭 中村
学 石川
健太郎 石井
勇佑 清水
淳 澤地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
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Publication of JPWO2025089134A5 publication Critical patent/JPWO2025089134A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2025539770A 2023-10-24 2024-10-15 プラズマエッチング装置及びプラズマエッチング方法 Active JP7799906B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023182263 2023-10-24
JP2023182263 2023-10-24
PCT/JP2024/036692 WO2025089134A1 (ja) 2023-10-24 2024-10-15 プラズマエッチング装置及びプラズマエッチング方法

Publications (3)

Publication Number Publication Date
JPWO2025089134A1 JPWO2025089134A1 (https=) 2025-05-01
JPWO2025089134A5 JPWO2025089134A5 (https=) 2025-09-25
JP7799906B2 true JP7799906B2 (ja) 2026-01-15

Family

ID=95515430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025539770A Active JP7799906B2 (ja) 2023-10-24 2024-10-15 プラズマエッチング装置及びプラズマエッチング方法

Country Status (5)

Country Link
US (1) US20260066237A1 (https=)
JP (1) JP7799906B2 (https=)
CN (1) CN121312312A (https=)
TW (1) TW202533285A (https=)
WO (1) WO2025089134A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234762A (ja) 2006-02-28 2007-09-13 Hitachi High-Technologies Corp プラズマエッチング装置及び方法
JP2007287924A (ja) 2006-04-17 2007-11-01 Hitachi High-Technologies Corp プラズマ処理方法およびプラズマ処理装置
JP2008091651A (ja) 2006-10-03 2008-04-17 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法
JP2013197183A (ja) 2012-03-16 2013-09-30 Tokyo Electron Ltd 半導体製造装置のガス供給方法、ガス供給システム及び半導体製造装置
JP2018064058A (ja) 2016-10-14 2018-04-19 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP2022034327A (ja) 2020-08-18 2022-03-03 東京エレクトロン株式会社 基板処理装置および基板処理装置のガス切り替え方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234762A (ja) 2006-02-28 2007-09-13 Hitachi High-Technologies Corp プラズマエッチング装置及び方法
JP2007287924A (ja) 2006-04-17 2007-11-01 Hitachi High-Technologies Corp プラズマ処理方法およびプラズマ処理装置
JP2008091651A (ja) 2006-10-03 2008-04-17 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法
JP2013197183A (ja) 2012-03-16 2013-09-30 Tokyo Electron Ltd 半導体製造装置のガス供給方法、ガス供給システム及び半導体製造装置
JP2018064058A (ja) 2016-10-14 2018-04-19 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP2022034327A (ja) 2020-08-18 2022-03-03 東京エレクトロン株式会社 基板処理装置および基板処理装置のガス切り替え方法

Also Published As

Publication number Publication date
US20260066237A1 (en) 2026-03-05
CN121312312A (zh) 2026-01-09
TW202533285A (zh) 2025-08-16
JPWO2025089134A1 (https=) 2025-05-01
WO2025089134A1 (ja) 2025-05-01

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