CN121219816A - 制造具有凹部结构的部件的方法和具有凹部结构的部件 - Google Patents

制造具有凹部结构的部件的方法和具有凹部结构的部件

Info

Publication number
CN121219816A
CN121219816A CN202480035726.0A CN202480035726A CN121219816A CN 121219816 A CN121219816 A CN 121219816A CN 202480035726 A CN202480035726 A CN 202480035726A CN 121219816 A CN121219816 A CN 121219816A
Authority
CN
China
Prior art keywords
catalyst material
component
cross
section
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480035726.0A
Other languages
English (en)
Chinese (zh)
Inventor
小野良贵
佐野耕平
林泰夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of CN121219816A publication Critical patent/CN121219816A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Catalysts (AREA)
CN202480035726.0A 2023-05-31 2024-03-26 制造具有凹部结构的部件的方法和具有凹部结构的部件 Pending CN121219816A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023089319 2023-05-31
JP2023-089319 2023-05-31
PCT/JP2024/012084 WO2024247461A1 (ja) 2023-05-31 2024-03-26 凹部構造を有する部材を製造する方法および凹部構造を有する部材

Publications (1)

Publication Number Publication Date
CN121219816A true CN121219816A (zh) 2025-12-26

Family

ID=93657139

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480035726.0A Pending CN121219816A (zh) 2023-05-31 2024-03-26 制造具有凹部结构的部件的方法和具有凹部结构的部件

Country Status (5)

Country Link
US (1) US20260063997A1 (https=)
JP (1) JPWO2024247461A1 (https=)
CN (1) CN121219816A (https=)
TW (1) TW202514768A (https=)
WO (1) WO2024247461A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1539700A (en) * 1976-05-14 1979-01-31 Int Plasma Corp Process for etching sio2
JPS5587436A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Method of producing semiconductor device
JP3704965B2 (ja) * 1998-08-12 2005-10-12 セイコーエプソン株式会社 ドライエッチング方法及び装置
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
JP6028969B2 (ja) * 2012-08-24 2016-11-24 国立大学法人大阪大学 結晶基板に孔を形成する方法、並びに結晶基板内に配線や配管を有する機能性デバイス
JP7567547B2 (ja) * 2021-02-19 2024-10-16 Ａｇｃ株式会社 凹部を有するケイ素含有部材の製造方法

Also Published As

Publication number Publication date
US20260063997A1 (en) 2026-03-05
WO2024247461A1 (ja) 2024-12-05
JPWO2024247461A1 (https=) 2024-12-05
TW202514768A (zh) 2025-04-01

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